Current–phase relations of a ring-trapped Bose–Einstein condensate with a weak link

The current–phase relations of a ring-trapped Bose–Einstein condensate interrupted by a rotating rectangular barrier are extensively investigated with an analytical solution. A current–phase diagram, single and multi-valued relation, is presented with a rescaled barrier height and width. Our results show that the finite size makes the current–phase relation deviate a little bit from the cosine form for the soliton solution in the limit of a vanishing barrier, and the periodic boundary condition selects only the plane wave solution in the case of high barrier. The reason for multi-valued current–phase relation is given by investigating the behavior of soliton solution.     

Gate-modulated generation–recombination current in n-type metal–oxide–semiconductor field-effect transistor

Gate-modulated generation–recombination（GMGR） current IGMGRinduced by the interface traps in an n-type metal–oxide–semiconductor field-effect transistor（n MOSFET） is investigated. The generation current is found to expand rightwards with increasing the reversed drain PN junction bias, and the recombination current is enhanced as the forward drain bias increases. The variations of IGMGRcurves are ascribed to the changes of the electron density and hole density at the interface, NSand PS, under the different drain bias voltages. Based on an analysis of the physical mechanism, the IGMGR model is set up by introducing two coefficients（m and t）. The coefficients m and t can modulate the curves widths and peak values. The simulated results under reverse mode and forward mode are obviously in agreement with the experimental results. This proves that this model can be applicable for generation current and recombination current and that the theory behind the model is reasonable. The details of the relevant mechanism are given in the paper.     

Structural response of aluminum core–shell particles in detonation environment

Natural aluminum particles have the core–shell structure. The structure response refers to the mechanical behavior of the aluminum particle structure caused by external influences. The dynamic behavior of the structural response of aluminum core–shell particles before combustion is of great importance for the aluminum powder burning mechanism and its applications. In this paper, an aluminum particle combustion experiment in a detonation environment is conducted and analyzed; the breakage factors of aluminum particles shell in detonation environment are analyzed. The experiment results show that the aluminum particle burns in a gaseous state and condenses into a sub-micron particle cluster. The calculation and simulation demonstrate that the rupture of aluminum particle shell in the detonation environment is mainly caused by the impact of the detonation wave. The detonation wave impacts the aluminum particles, resulting in shell cracking, and due to the shrinkage-expansion of the aluminum core and stripping of the detonation product, the cracked shell is fractured and peeled with the aluminum reacting with the detonation product.     

Phonon-dependent transport through a serially coupled double quantum dot system

Using Keldysh nonequilibrium Green function formalism and mapping a many-body electron–phonon interaction onto a one body problem, the electron transport through a serially coupled double quantum dot system is analyzed. The influence of the electron–phonon interaction, temperature, detuning, and interdot tunneling on the transmission coefficient and current is studied. Our results show that the electron–phonon interaction results in the appearance of the side peaks in the transmission coefficient, whose height is strongly dependent on the phonon temperature. We have also found that the inequality of the electron–phonon interaction strength in two dots gives rise to an asymmetry in the current–voltage characteristic. In addition, the temperature difference between the phonon and electron subsystems results in the reduction of the saturated current and the destruction of the step-like behavior of the current. It is also observed that the detuning can improve the magnitude of the current by compensating the mismatch of the quantum dots energy levels induced by the electron–phonon interaction.     

Interfacial and electrical characteristics of a HfO_2/n–InAlAs MOS-capacitor with different dielectric thicknesses

AHfO2/n–In Al As MOS-capacitor has the advantage of reducing the serious gate leakage current when it is adopted in In As/Al Sb HEMT instead of the conventional Schottky-gate. In this paper, three kinds of Hf O2/n–In Al As MOS-capacitor samples with different Hf O2 thickness values of 6, 8, and 10 nm are fabricated and used to investigate the interfacial and electrical characteristics. As the thickness is increased, the equivalent dielectric constant ε ox of Hf O2 layer is enhanced and the In AlAs-HfO2 interface trap density Ditis reduced, leading to an effective reduction of the leakage current. It is found that the Hf O2 thickness of 10 nm is a suitable value to satisfy the demands of most applications of a HfO2/n–In Al As MOS-capacitor, with a sufficiently low leakage current compromised with the threshold voltage.     

Electromagnetic backscattering from one-dimensional drifting fractal sea surface Ⅰ:Wave–current coupled model

To study the electromagnetic backscattering from a one-dimensional drifting fractal sea surface,a fractal sea surface wave–current model is derived,based on the mechanism of wave–current interactions.The numerical results show the effect of the ocean current on the wave.Wave amplitude decreases,wavelength and kurtosis of wave height increase,spectrum intensity decreases and shifts towards lower frequencies when the current occurs parallel to the direction of the ocean wave.By comparison,wave amplitude increases,wavelength and kurtosis of wave height decrease,spectrum intensity increases and shifts towards higher frequencies if the current is in the opposite direction to the direction of ocean wave.The wave–current interaction effect of the ocean current is much stronger than that of the nonlinear wave–wave interaction.The kurtosis of the nonlinear fractal ocean surface is larger than that of linear fractal ocean surface.The effect of the current on skewness of the probability distribution function is negligible.Therefore,the ocean wave spectrum is notably changed by the surface current and the change should be detectable in the electromagnetic backscattering signal.     

Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H_2Pc heterojunction

A novel surface-type nonvolatile electric memory elements based on organic semiconductors Cu Pc and H2 Pc are fabricated by vacuum deposition of the Cu Pc and H2 Pc films on preliminary deposited metallic(Ag and Cu) electrodes.The gap between Ag and Cu electrodes is 30–40 μm. For the current–voltage(I–V) characteristics the memory effect,switching effect, and negative differential resistance regions are observed. The switching mechanism is attributed to the electric-field-induced charge transfer. As a result the device switches from a low to a high-conductivity state and then back to a low conductivity state if the opposite polarity voltage is applied. The ratio of resistance at the high resistance state to that at the low resistance state is equal to 120–150. Under the switching condition, the electric current increases~80–100times. A comparison between the forward and reverse I–V characteristics shows the presence of rectifying behavior.     

Graphene Tamm plasmon-induced giant Goos–H?nchen shift at terahertz frequencies

In this Letter, we have shown that a giant Goos–H?nchen shift of a light beam reflected at terahertz frequencies can be achieved by using a composite structure, where monolayer graphene is coated on one-dimensional photonic crystals separated by a dielectric slab. This giant Goos–H?nchen shift originates from the enhancement of the electrical field, owing to the excitation of optical Tamm states at the interface between the graphene and onedimensional photonic crystal. It is shown that the Goos–H?nchen shift in this structure can be significantly enlarged negatively and can be switched from negative to positive due to the tunability of graphene's conductivity. Moreover, the Goos–H?nchen shift of the proposed structure is sensitive to the relaxation time of graphene and the thickness of the top layer, making this structure a good candidate for a dynamic tunable optical shift device in the terahertz regime.     

Size-dependent thermal stresses in the core–shell nanoparticles

The thermal stress in a magnetic core–shell nanoparticle during a thermal process is an important parameter to be known and controlled in the magnetization process of the core–shell system. In this paper we analyze the stress that appears in a core–shell nanoparticle subjected to a cooling process. The external surface temperature of the system, considered in equilibrium at room temperature, is instantly reduced to a target temperature. The thermal evolution of the system in time and the induced stress are studied using an analytical model based on a time-dependent heat conduction equation and a differential displacement equation in the formalism of elastic displacements. The source of internal stress is the difference in contraction between core and shell materials due to the temperature change. The thermal stress decreases in time and is minimized when the system reaches the thermal equilibrium. The radial and azimuthal stress components depend on system geometry, material properties, and initial and final temperatures. The magnitude of the stress changes the magnetic state of the core–shell system. For some materials, the values of the thermal stresses are larger than their specific elastic limits and the materials begin to deform plastically in the cooling process. The presence of the induced anisotropy due to the plastic deformation modifies the magnetic domain structure and the magnetic behavior of the system.     

Determination of the vapor–liquid transition of square-well particles using a novel generalized-canonical-ensemble-based method

The square-well(SW) potential is one of the simplest pair potential models and its phase behavior has been clearly revealed, therefore it has become a benchmark for checking new theories or numerical methods. We introduce the generalized canonical ensemble(GCE) into the isobaric replica exchange Monte Carlo(REMC) algorithm to form a novel isobaric GCE-REMC method, and apply it to the study of vapor–liquid transition of SW particles. It is validated that this method can reproduce the vapor–liquid diagram of SW particles by comparing the estimated vapor–liquid binodals and the critical point with those from the literature. The notable advantage of this method is that the unstable vapor–liquid coexisting states,which cannot be detected using conventional sampling techniques, are accessed with a high sampling efficiency. Besides,the isobaric GCE-REMC method can visit all the possible states, including stable, metastable or unstable states during the phase transition over a wide pressure range, providing an effective pathway to understand complex phase transitions during the nucleation or crystallization process in physical or biological systems.     

Contact resistance asymmetry of amorphous indium–gallium–zinc–oxide thin-film transistors by scanning Kelvin probe microscopy

In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain(S/D) series resistance in operating amorphous indium–gallium–zinc–oxide(a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metalsemiconductor junction.     

Validation of the Wiedemann–Franz law in a granular s-wave superconductor in the nanometer scale

The present study tries to evaluate the validity of the Wiedemann–Franz law in a granular s-wave superconductor in the presence of concentrated impurities. By using Green's function method and the Kubo formula technique, three distinct contributions of the Aslamazov–Larkin, the Maki–Thompson and, the density of states are calculated for both the electrical conductivity and the thermal conductivity in a granular s-wave superconductor. It is demonstrated that these different contributions to the fluctuation conductivity depend differently on the tunneling because of their different natures. This study examines the transport in a granular superconductor system in three dimensions in the limit of large tunneling conductance,which makes it possible to ignore all localization effects and the Coulomb interaction. We find that the tunneling is efficient near the critical temperature and that there is a crossover to the characteristic behavior of a homogeneous system.When it is far from the critical temperature, the tunneling is not effective and the system behaves as an ensemble of real zero-dimensional grains. The results show that the Wiedemann–Franz law is violated in both temperature regions.     

Secondary electron yield suppression using millimeter-scale pillar array and explanation of the abnormal yield–energy curve

The phenomenon of secondary electron emission is of considerable interest in areas such as particle accelerators and on-board radio frequency(RF) components.Total secondary electron yield(TSEY) is a parameter that is frequently used to describe the secondary electron emission capability of a material.It has been widely recognized that the TSEY vs.primary electron energy curve has a single-hump shape.However, the TSEY–energy curve with a double-hump shape was also observed experimentally—this anomaly still lacks explanation.In this work, we explain this anomaly with the help of a millimetre-scale(mm-scale) silver pillar array fabricated by three-dimensional(3 D) printing technology.The TSEY–energy curve of this pillar array as well as its flat counterpart is obtained using sample current method.The measurement results show that for the considered primary electron energy(40–1500 eV), the pillar array can obviously suppress TSEY,and its TSEY–energy curve has an obvious double-hump shape.Through Monte Carlo simulations and electron beam spot size measurements, we successfully attribute the double-hump effect to the dependence of electron beam spot size on the primary electron energy.The observations of this work may be of help in determining the TSEY of roughened surface with characteristic surface structures comparable to electron beam spot size.It also experimentally confirms the TSEY suppression effect of pillar arrays.     

Modeling for V–O_2 reactive sputtering process using a pulsed power supply

In this article, we present a time-dependent model that enables us to describe the dynamic behavior of pulsed DC reactive sputtering and predict the film compositions of VOx prepared by this process. In this modeling, the average current J is replaced by a new parameter of Jeff. Meanwhile, the four species states of V, V2O3, VO2, and V2O5 in the vanadium oxide films are taken into consideration. Based on this work, the influences of the oxygen gas supply and the pulsed power parameters including the duty cycle and frequency on film compositions are discussed. The model suggests that the time to reach process equilibrium may vary substantially depending on these parameters. It is also indicated that the compositions of VOx films are quite sensitive to both the reactive gas supply and the duty cycle when the power supply works in pulse mode. The ‘steady-state’ balance values obtained by these simulations show excellent agreement with the experimental data, which indicates that the experimentally obtained dynamic behavior of the film composition can be explained by this time-dependent modeling for pulsed DC reactive sputtering process. Moreover, the computer simulation results indicate that the curves will essentially yield oscillations around the average value of the film compositions with lower pulse frequency.     

A review of current research on spin currents and spin–orbit torques

Spintronics is a new discipline focusing on the research and application of electronic spin properties. After the discovery of the giant magnetoresistance effect in 1988, spintronics has had a huge impact on scientific progress and related applications in the development of information technology. In recent decades, the main motivation in spintronics has been efficiently controlling local magnetization using electron flow or voltage rather than controlling the electron flow using magnetization. Using spin–orbit coupling in a material can convert a charge current into a pure spin current(a flow of spin momenta without a charge flow) and generate a spin–orbit torque on the adjacent ferromagnets. The ability of spintronic devices to utilize spin-orbit torques to manipulate the magnetization has resulted in large-scale developments such as magnetic random-access memories and has boosted the spintronic research area. Here in, we review the theoretical and experimental results that have established this subfield of spintronics. We introduce the concept of a pure spin current and spin-orbit torques within the experimental framework, and we review transport-, magnetization-dynamics-, and opticalbased measurements and link then to both phenomenological and microscopic theories of the effect. The focus is on the related progress reported from Chinese universities and institutes, and we specifically highlight the contributions made by Chinese researchers.     

Collapse–revival of squeezing of two atoms in dissipative cavities

Based on the time-convolutionless master-equation approach, we investigate the squeezing dynamics of two atoms in dissipative cavities. We find that the atomic squeezing is related to initial atomic states, atom–cavity couplings, nonMarkovian effects and resonant frequencies of an atom and its cavity. The results show that a collapse–revival phenomenon will occur in the atomic squeezing and this process is accompanied by the buildup and decay of entanglement between two atoms. Enhancing the atom–cavity coupling can increase the frequency of the collapse–revival of the atomic squeezing.The stronger the non-Markovian effect is, the more obvious the collapse–revival phenomenon is. In particular, if the atom–cavity coupling or the non-Markovian effect is very strong, the atomic squeezing will tend to a stably periodic oscillation in a long time. The oscillatory frequency of the atomic squeezing is dependent on the resonant frequency of the atom and its cavity.     

A macroscopic traffic model based on weather conditions

A traffic model based on the road surface conditions during adverse weather is presented. The surface of a road is affected by snow, compacted snow, and ice, which affects the traffic behavior. In this paper, a new macroscopic traffic flow model based on the transition velocity distribution is proposed which characterizes traffic alignment under adverse weather conditions. Two examples are considered to illustrate the effect of the transition velocity behavior on traffic velocity and density. Simulation results are presented which show that this model provides a more accurate characterization of traffic flow behavior than the well known Payne–Whitham model. The proposed model can be used to reduce accidents and improve road safety during adverse weather conditions.     

Giant transmission Goos–Hnchen shift in surface plasmon polaritons excitation and its physical origin

Excitation of surface plasmon polaritons(SPPs) propagating at the interface between a dielectric medium and a silver thin film by a focused Gaussian beam in a classical Kretschmann prism setup is studied theoretically. We find that the center of the transmitted Gaussian evanescent wave has a giant lateral shift relative to the incident Gaussian beam center for a wide range of incident angle and Gaussian beam wavelength to excite SPPs, which can be more than two orders of magnitude larger than the silver film thickness. The phenomenon is closely related with the conventional Goos–Hnchen effect for total internal reflection of light beam, and it is called the transmission Goos–Hnchen shift. We find that this lateral shift depends heavily on the excitation wavelength, incident angle, and the silver layer thickness. Finite-difference time-domain simulations show that this transmission Goos–Hnchen shift is induced by a unique dynamical process of excitation, transport, and leakage of SPPs.     

High response Schottky ultraviolet photodetector formed by PEDOT:PSS transparent electrode contacts to Mg_(0.1)Zn_(0.9)O

In this paper, we report a Schottky ultraviolet photodetector based on poly(3,4-ethylenedioxy-thiophene)poly(styrenesulfonate)(PEDOT:PSS) transparent electrode contacts to Mg0.1Zn0.9O. The I–V characteristic curves of the device are measured in the dark condition and under the illumination of a 340-nm UV light. The device shows a typical rectifying behavior with a current rectification ratio of 103 at ±2 V, which exhibits a good Schottky behavior. The phototo-dark current ratio is high, which is 1×103at-4 V. A peak response of 0.156 A/W at 340 nm is observed. The device also exhibits a wide response from 250 nm to 340 nm, with a response larger than 0.1 A/W. It covers the UV-B region(280 nm–320 nm), which makes the device very suitable for the detection of UV-B light.