Indium-defect complexes in silicon studied by perturbed angular correlation spectroscopy

The formation of molecule-like complexes, consisting of a defect and a radioactive¹¹¹In atom, is studied using the perturbed angular correlation technique (PAC). The complexes are characterized by their defect specific electric field gradients which also contain information on the geometry of the formed complexes. Whereas the complex is formed with the¹¹¹In atom, its electric field gradient is measured after the decay of the radioactive¹¹¹In atom to¹¹¹Cd. Formation and dissolution of the molecule-like complexes is pursued for a variety of different conditions, such as sample temperature, dopant concentration and position of the Fermi level. In particular, the interaction of In atoms with the following defects in Si was investigated: Intrinsic defects, created by particle irradiation; substitutional donor atoms (P, As, Sb, Bi); and interstitial impurity atoms (Li, H, and an unidentified X defect); especially, the latter ones are known to passivate acceptor atoms in Si. Methodology and specific properties of the PAC technique will be illustrated with the help of these examples.     

The effect of external electric field on mass attenuation coefficients of some semiconductor

In this study, we measured the mass attenuation coefficient of n-type GaAs, p-type GaAs, n-type Si and Au/n-Si/n⁺Si/Al samples with and without external electric field. Samples were set in perpendicular direction to the 100?mCi ²⁴¹Am radioactive source and counts were made with a NaI(Tl) detector. It was observed that when an external electric field was applied onto the samples, mass attenuation coefficients were increased. Results showed that this study is consistent with previous studies.     

Hyperfine fields and impurity configurations for indium and palladium in nickel

Hyperfine field distributions and electric field gradients due to impurity configurations in dilute NiPd alloys were measured by time differential perturbed angular correlation techniques, using the nuclear probe¹¹¹Cd(¹¹¹In). The onset of various near neighbour impurity configurations could be followed with increasing Pd impurity concentration from 0.2 to 2.5 at %. An enhancement of their populations due to a strong indium-palladium attraction in nickel was observed. These observations were complemented by measurements at¹⁰⁰Rh (¹⁰⁰Pd) probe nuclei in a Ni_98.5In_1.5 alloy.     

Hot́ hole anisotropic effect in silicon and germanium

Anisotropic effect of the hole drift velocity in silicon and germanium has been investigated with the time of flight technique by applying the electric field parallel to the <100 and <111 crystallographic axis. The measurements were performed for electric fields ranging from 10 to 3 × 10⁴V/cm and temperatures from 40 to 200°K. The results indicate that the anisotropic effect v_d<100/v_d<111 increases with decreasing temperature and increasing electric field, and reaches a saturation value at high electric fields (? 10⁴V/cm). The maximum anisotropic effect for Ge is 1.25 at 40°K and for Si is 1.2 at 45°K. A qualitative analysis of the experimental data indicates that the anisotropic effect is due to the warped heavy-valence-band shape.     

TDPAC studies on181Hf implanted into diamond

¹⁸¹Hf ions were implanted at (900±10)K into (100) cleaved single crystal diamonds. After subsequent annealing residence site parameters were determined for the implanted ions employing the (133 keV)–(482 keV) cascade in¹⁸¹Ta in TDPAC technique. Fractions of 5% each were determined that experience axially symmetric electric field gradients (EFG) V_zz(1)=5.5×10¹⁷ V cm^–2 and V_zz(2)=9.6×10¹⁷ V cm^–2, respectively. The bulk of the ions are strongly disturbed by still higher electric field gradients.     

Enhanced electron field emission from dense Si nano-dots prepared by laser crystallization of ultrathin amorphous Si films

Dense Si nano-dots with a surface area density of >10¹⁰ cm^?2 were fabricated by excimer laser induced crystallization of 15 nm-thick amorphous Si thin films. The enhanced electron field emission characteristics were found from laser irradiated samples. The threshold electric field is as low as 9.8V/μm and the field enhancement factor can reach as large as 719, which is compatible with the other good cold cathode materials. The improvements in field emission behavior can be associated with the change in the surface morphology after laser irradiation as well as the enhanced internal electric field due to the formation of Si nano-dots within the films.     

InN纳米线的低压化学气相沉积及其场发射特性研究

利用低压化学气相沉积方法在以Au作催化剂的Si衬底上生长了InN纳米线. 扫描电子显微镜分析表明，这些纳米线的直径在60—100 nm的范围内, 而其长度大于1 μm.高分辨透射电子显微镜图像表明，合成的纳米线中含有六方相和立方相的InN晶体.这些InN纳米线具有良好的场发射特性和稳定的场发射电流，其开启场为10.02 V/μm(电流密度为10 μA/cm²)，在24 V/μm 的电场下，其电流密度达到5.5 mA/cm².此外，对InN纳米线的场发射机理也进行了讨论. 关键词： InN纳米线 场电子发射 非线性Fower-Nordheim曲线     

Theoretical study on C100 fullerenes and C96X4 (X=N,P, B,Si)

The geometrical structures and electronic properties of six fullerene isomers of C₁₀₀ were studied at the HF/6-31G^? and B3LYP/6-31G^? levels, respectively. The results of the fully optimized calculations show that three C₁₀₀ isomers 449:D₂, 425:C₁ and 442:C₂ are near isoenergetic isomers. The energies and properties of C₁₀₀ hexaanions were calculated. The C₁₀₀^6? (450:D₅) isomer is predicted to be the most stable isomer at the B3LYP/6-31G^? level, and the C₁₀₀^6? (449:D₂) isomer is 44.1 kcal/mol higher in energy. The heterofullerenes C₉₆X₄ (X=N, P, B, Si) formed from the initial C₁₀₀ (449:D₂) have also been investigated at the B3LYP/6-31G^? level. The HOMO–LUMO gaps and aromaticities show that the replacement of fullerene carbon atoms with four heteroatoms can enhance the electronic stabilization of C₁₀₀ (449:D₂).     

PAC investigation of77Br→77Se on silicon surfaces

The perturbed-angular correlation (PAC) method has been applied to investigate the sites occupied by isolated⁷⁷Br-atoms on silicon surfaces. The nuclear quadrupole interaction was used to determine the electric field gradients (efg) acting at the 5/2^– state in⁷⁷Se, populated in the⁷⁷Br decay. For the Si(100)2×1 surface two different field gradients have been observed with the parameters _Q1 = 583(5) MHz, ₁ = 0.0(1) and _Q2=543(5) MHz, ₂ = 0.40(3). Typical values for the Si(111)7×7 surface from preliminary data are _Q=548(9) MHz,=0.54(6). These electric field gradients are identified with adsorption sites of the selenium at dangling bonds of the silicon surfaces.     

Ab initio calculations of electric field gradients detected by impurities in TiO2, Al2O3 and CaCO3

We present ab initio calculations of electric field gradients (EFGs) at impurity sites in ionic crystals TiO₂, Al₂O₃ and CaCO₃. The electronic structure was calculated self-consistently by the KKR method in the framework of the local spin density approximation of the density functional theory. The system with a single impurity was simulated by the super cell method. It was found that EFGs for the transition metal impurities (Sc, Nb, Cd and Ta) in TiO₂ were well reproduced by the calculations if the charge state of them in TiO₂ was taken into account. The present method was applied to the determination of the implantation sites of N and O nuclei in TiO₂. The calculation of EFGs at a Si impurity in Al₂O₃ and at Ca site in CaCO₃ were used to derive the quadrupole moments of ²⁷Si and ³⁹Ca from their quadrupole coupling constants. This revised version was published online in August 2006 with corrections to the Cover Date.     

Quadrupole Interaction of 99Ru in Pr,Nd and 100Rh in Tb Hosts

The electric field gradient at transition element impurities ⁹⁹Ru and ¹⁰⁰Rh in metallic rare earth hosts Pr, Nd and Tb has been investigated by time differential perturbed angular correlation (TDPAC) technique at room temperature. The electric field gradients, calculated from the measured quadrupole interaction frequencies at room temperature, are; RuPr: 6.06×10¹⁷ V/cm², RuNd: 5.83×10¹⁷ V/cm² and RhTb: 5.40×10¹⁷ V/cm². The electronic enhancement factors (α) for RuPr and RuNd are about 2.5 times the value observed in RuGd and RhTb (it is found to be more than 40 as in RhGd). The results cannot be explained in terms of the existing models based on charge transfer or volume mismatch of the impurity and the host. This revised version was published online in September 2006 with corrections to the Cover Date.     

Enhanced field emission from ZnO nanopencils by using pyramidal Si(1 0 0) substrates

Zinc oxide nanopencil arrays were synthesized on pyramidal Si(1 0 0) substrates via a simple thermal evaporation method. Their field emission properties have been investigated: the turn-on electric field (at the current density of 10 μA/cm²) was about 3.8 V/μm, and the threshold electric field (at the current density of 1 mA/cm²) was 5.8 V/μm. Compared with similar structures grown on flat Si substrates, which were made as references, the pyramidal Si-based ZnO nanopencil arrays appeared to be superior in field emission performance, thus the importance of the non-flat substrates has been accentuated. The pyramidal Si substrates could not only suppress the field screening effect but also improve the field enhancement effect during the field emission process. These findings indicated that using non-flat substrates is an efficient strategy to improve the field emission properties.     

The electric field gradient at 57Fe in zinc and comparisons with the conduction-electron charge-shift model

The magnitude of the electric field gradient at ⁵⁷Fe probe nuclei in Zn is measured using Mössbauer effect and the value is 2.34 × 10¹⁷ V/cm². The electric field gradients at Fe probe nuclei in Ti, Zn, Zr, Cd and Hf hosts are compared with the predictions of the conduction-electron charge-shift model.     

Effect of quantum confinement and influence of extra charge on the electric field gradient in ZnO

By means of electron-nuclear double resonance (ENDOR), it is shown that the Al impurity, which acts as a shallow donor in ZnO, leads to a significant reduction of the electric field gradient in ZnO single crystals. In ZnO quantum dots, however, the gradient on the Al sites remains virtually unchanged. When the Zn²⁺ ion is substituted by Mn²⁺ in a ZnO single crystal, the electric field gradient slightly increases (by about 20%). Therefore, the Mn²⁺ ions can be used as probes to monitor the electric field gradients in ZnO crystals.     

激光晶化形成纳米硅材料的场电子发射性质研究

利用KrF准分子激光退火超薄非晶硅膜,并结合热退火技术制备了单层纳米硅薄膜并研究了薄膜的场电子发射性质.在晶化形成的纳米硅薄膜中可以观测到稳定的场电子发射现象,其开启电场从原始淀积的非晶硅薄膜的17V/μm降低到8.5V/μm,而场发射电流密度可以达到0.1mA/cm².激光晶化后形成的纳米硅材料的场电子发射特性的改善可以从薄膜表面形貌的改变以及高密度纳米硅的形成所导致的内部电场增强作用来解释. 关键词： 纳米硅 场发射 激光晶化     

EFG sign for Sn in Zn,Cd, and Sb

Mössbauer spectroscopy on ion-implanted sources of¹¹⁹Cd in single-crystals was applied to study the electric field gradients (EFG) at¹¹⁹Sn in three non-cubic metals. The signs and magnitudes determined are in agreement with presently known systematics. The measured isomer shifts and the recoilless fractions are discussed.     

Local nuclear orientation of125I in tin and graphite using defect induced electric field gradients

Defect-induced field electric field gradients, generated by ion implantation of¹²⁵I in α- and β-Sn and in graphite, were used to obtain local nuclear orientation at low temperatures. The resulting nuclear orientation at the parent¹²⁵I state was detected by¹²⁵Te Mössbaner spectroscopy. From the measured nuclear quadrupole interaction strengths at the parent state, the electric field gradient and the cooling behavior of implanted atoms were studied.     

Structural and electrical properties of polycrystalline PbZr0.5Ti0.5O3 films deposited on La0.5Sr0.5CoO3 coated silicon by sol-gel process

La_0.5Sr_0.5CoO₃ (LSCO) films have been grown on Si (100) by a metalorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate, strontium acetate and cobalt acetate as the starting materials. Subsequent PbZr_0.5Ti_0.5O₃ (PZT) films were deposited onto LSCO films by a modified sol-gel method. Field-emission scanning electron microscopy and X-ray diffraction analysis show that PZT and LSCO films are polycrystalline and entirely perovskite phase. At an applied electric field of 250 kV/cm, the Pt/PZT/LSCO capacitor shows no polarization fatigue after 3×10⁹ switching cycles and an internal electric field; the remnant polarization P_r and the coercive field E_c are about 22 μC/cm² and 73 kV/cm, respectively. The dielectric constant of PZT films is 650 at a frequency of 1 kHz. Received: 20 February 2001 / Accepted: 6 June 2001 / Published online: 30 August 2001     

溶胶-凝胶法制备Sr2Bi4Ti5O18薄膜及其铁电性能研究

采用溶胶-凝胶法,在氧气氛中和层层晶化的工艺条件下,成功地制备了沉积在Pt/Ti/SiO₂/Si(100)衬底上的铁电性能优良的Sr₂Bi₄Ti₅O₁₈ (SBTi)薄膜,并研究了SBTi薄膜的微结构、表面形貌、铁电性能和疲劳特性.研究表明：薄膜具有单一的层状钙钛矿结构，且为随机取向；薄膜表面光滑，无裂纹，厚度约为725nm；铁电性能测试显示较饱和、方形的电滞回线，当外电场强度为275kV/cm时 关键词： 溶胶-凝胶法 铁电薄膜 2Bi₄Ti₅O₁₈')" href="#">Sr₂Bi₄Ti₅O₁₈     

Dopant-dependence of one-step metal-induced dopant activation process in silicon

We investigate dopant-dependence of low temperature dopant activation technique in α-Si featuring one-step metal-induced crystallization (MIC) to decrease resistivity of p⁺ and n⁺ Si films by forming Ni_xSi_y. Ni not only crystallizes p-type α-Si film but also facilitates activation of boron atoms in the α-Si during the crystallization at 500 °C. However, phosphorus atoms are poorly activated because of the suppressed Ni-MIC rate in n-type α-Si. Finally, p⁺/n and n⁺/p junction diodes are demonstrated on single crystalline Si substrates by the low temperature dopant activation technique promising for high performance TFTs as well as transistors with an elevated S/D.