Effect of Mg doping on the electrical properties of SnO2 nanoparticles

Sol-gel derived Mg doped tin oxide (Sn_1−xMg_xO₂) nanocrystals were synthesized with x ranging between 0.5 and 7 at. %. Characteristic single phase tetragonal structure of pure and doped samples was obtained and doping saturation was inferred by X-ray diffraction analysis. Structural, morphological and phase informations were obtained by high resolution transmission electron microscope, field emission scanning electron microscope and X-ray photoelectron spectroscopy respectively whereas bonding information was obtained from Fourier transformed infrared spectroscopy. Measurement of different electrical parameters with frequency (200 Hz-10⁵ Hz) has been carried out at room temperature. Ultrahigh dielectric constant and metallic AC conductivity were observed for undoped tin oxide and the profiles reflected highly sensitive changes in the atomic and interfacial polarizability generated by doping concentrations. Relaxation spectra of tangent loss of any sample did not show any loss peak within the frequency range. Both the grain and grain boundary contributions are observed to increase as the doping concentration increased. Results of first principle calculation based on density functional theory indicated effective Fermi level (E_F) suppression due to Mg doping which is responsible for the experimentally observed conductivity variation. AC conductivity was found to depend strongly on the doping concentration and the defect chemistry of the compound. Mg doped SnO₂ may find applications as a low loss dielectric and high density energy storage material.     

γ-irradiation effect on the spectroscopic and electrical properties of K2SO4—Na2SO4 mixed system

Abstract

Measurements of electron paramagnetic resonance, infrared and electrical properties were carried out for the K₂SO₄—Na₂SO₄ mixed system before and after γ-irradiation. EPR measurements revealed the presence of a quartet of lines characterized by an isotropic g-value of 2.0034. These lines are mainly attributed to the formation of a SO^? ₃ center which results from the interaction of γ-rays with the sulfate ion. A decrease in the absorption intensity of the Infrared radiation was observed after γ-irradiation due to radiation damage in the sulfate group. The electrical conductivity, σ, was measured for the K₂SO₄—Na₂SO₄ system before and after γ-irradiation in the temperature range from 30 up to 430°C. A considerable decrease in the conductivity value accompanied by an increase in the activation energy was observed after γ-irradiation. The energy of formation of Frenkel defects was estimated to be 2.94eV. The current-voltage characteristics were measured at different temperatures in order to estimate the type of conduction in the samples. Isothermal annealing kinetics was investigated at different temperatures before and after γ-irradiation. The electrical conductivity decreases with increasing time of annealing and the annealing process is dominated by a unique rate process.     

Luminescence of Ce and Pr doped Sr2Mg(BO3)2 under VUV-UV and X-ray excitation

This report presents the luminescence properties of Ce³⁺ and Pr³⁺ activated Sr₂Mg(BO₃)₂ under VUV-UV and X-ray excitation. The five excitation bands of crystal field split 5d states are observed at about 46 729, 44 643, 41 667, 38 314 and 29 762 cm⁻¹ (i.e. 214, 224, 240, 261 and 336 nm) for Ce³⁺ in the host lattice. The doublet Ce³⁺ 5d→4f emission bands were found at about 25 840 and 24 096 cm⁻¹ (387 and 415 nm). The influence of doping concentration and temperature on the emission characteristics and the decay time of Ce³⁺ in Sr₂Mg(BO₃)₂ were investigated. For Pr³⁺ doped samples, the lowest 5d excitation band was observed at about 42017 cm⁻¹ (238 nm), a dominant band at around 35714 cm⁻¹ (280 nm) and two shoulder bands were seen in the emission spectra. The excitation and emission spectra of Ce³⁺ and Pr³⁺ were compared and discussed. The X-ray excited luminescence studies show that the light yields are ∼3200±230 and ∼1400±100 photons/MeV of absorbed X-ray energy for the samples Sr_1.86Ce_0.07Na_0.07Mg(BO₃)₂ and Sr_1.82Pr_0.09Na_0.09Mg(BO₃)₂ at RT, respectively.     

Dielectric properties and relaxation behavior of [TMA]2Zn0.5Cu0.5Cl4 compound

The [TMA]₂Zn_0.5Cu_0.5Cl₄ hybrid material was prepared and its dielectric spectra were measured in the 10⁻¹ Hz-10⁶ Hz frequency range and 200-305 K temperature interval. The dielectric permittivity showed a ferroelectric-paraelectric phase transition at 293 K. Double relaxation peaks are observed in the imaginary part of the electrical modulus, suggesting the presence of grain and grain boundary in the sample. The frequency dependent conductivity was interpreted in term of Jonscher's law: σ(ω)=σ_dc+Aωⁿ. The temperature dependent of the dc conductivity (σ_dc) was well described by the Arrhenius equation: σ_dcT=σ_o×exp(−E_a/kT).     

AC response of reduced undoped and Mg — doped LiNbO3

Abstract

The temperature dependence of the AC response of undoped and Mg — doped LiNbO₃ can excellently be reproduced by assuming Maxwell—Wagner type relaxation due to an inhomogeneous distribution of insulating and conducting regions in the crystals. In the latter parts conductivity is thermally activated. The activation energy changes abruptly from 610 meV to 170 meV if [Mg] rises above ～ 5%. This threshold concentration depends on the [Li]/[Nb] ratio. The nature of the inhomogeneities is not yet known.     

Effect of Ar+ irradiation on the electrical conductivity of BaCe0.9Y0.1O3−δ

The effects of 10 keV Ar⁺ ion irradiation on the electrical characteristics of BaCe_0.9Y_0.1O_2.95 subject to fluences of 0, 1.0 × 10¹⁷, 5.0 × 10¹⁷ and 1.0 × 10¹⁸ ions/cm² at room temperature, has been investigated using elastic recoil detection analysis (ERDA), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS) and alternating current (AC) impedance measurements. It was confirmed from the ERDA results that the hydrogen concentration near the surface increased with increase of Ar⁺ ion fluence. This increase may be associated with the increasing quantities of hydrogen generated by interaction between oxygen vacancies, formed by irradiation, and H₂O from exposure to air. SEM images showed clearly that the number of surface defects due to modification increased with increasing fluence. In addition, the size of the defects showed a tendency to increase with increasing fluence. From the results of XPS analyses, providing information on the electronic states on the surface, it was evident that with increase in the Ar⁺ ion fluence, the quantity of excess oxygen, such as hydroxide, increased in the oxygen 1s XPS spectrum. In addition, it was indirectly found, from decomposition of the Ce 3d, spectrum that the concentration of oxygen vacancies increased with fluence, since the percentage of Ce³⁺ also increased. Accordingly, the surface modification led to the formation of more oxygen vacancies and a greater hydrogen concentration on the surface, since the H₂O interacted with some of them. From the results of the DC conductivity and AC impedance measurements, the proton conductivity was shown to predominate over the temperature range from 473 K to 823 K. It was concluded that the increase in these protons and vacancies generated from surface modification contributed to the increase of proton conductivity.     

Effects of crystallographic orientation on the oxygen exchange rate of La0.7Sr0.3MnO3 thin films

The oxygen surface exchange of La_0.7Sr_0.3MnO₃ (LSM) thin films was investigated using the electrical conductivity relaxation (ECR) method. Epitaxial (100)-, (110)-, and (111)-oriented LSM films were fabricated on corresponding SrTiO₃ (STO) substrates using pulsed laser deposition. The LSM films had well-controlled surface qualities, exhibited bulk-like steady-state electrical properties, and exhibited surface dominated responses in ECR. The chemical surface exchange coefficients (k_chem) were determined and varied from ≈ 1 × 10^− 6 to 65 × 10^− 6 cm/s, depending on temperature and orientation, with activation energies of between 0.8 and 1.2 eV. At 800 °C, a four fold variation is observed in the k_chem values, with (110)/(100) being the highest/lowest, explained well by the high activation energy for (110), ≈ 1.16 eV, and the low energy for (111) and (100), ≈0.83 eV.     

Complex impedance spectroscopic studies of Ba(Pr1/2Ta1/2)O3 ceramic

The polycrystalline sample of Ba(Pr_1/2Ta_1/2)O₃ was prepared by a high-temperature solid-state reaction technique. The crystal symmetry, space group and unit cell dimensions were derived from the experimental results using FullProf software. XRD analysis of the compound indicated the formation of a single-phase tetragonal structure with the space group P4/mmm (1 2 3). Impedance and electric modulus analysis were used as tools to analyze the electrical behavior of the sample as a function of frequency at different temperatures. The impedance analysis of the compound indicated a typical negative temperature coefficient of resistance behavior, and dielectric relaxation was found to be of non-Debye type. The frequency dependent maximum of the imaginary part of the electric modulus follows the Arrhenius law with activation energy of 0.15 eV. The ac conductivity data obeys double power law.     

Investigations on Fe doped polyvinyl alcohol films with and without gamma (γ)-irradiation

This paper deals with the preparation of pure and ferric chloride (FeCl₃) doped polyvinyl alcohol (PVA) films by solution casting method. Optical and electrical properties were systematically investigated. We have found the decrease in optical band gap energy of PVA films on doping FeCl₃. The optical band gap energy values in the present work are found to be 3.10 eV for pure PVA, 2 eV for PVA:Fe³⁺ (5 mol%), 1.91 eV for PVA:Fe³⁺(15 mol%) and 1.8 eV for PVA:Fe³⁺(25 mol%). Direct current electrical conductivity (σ) of pure, FeCl₃ doped PVA films in the temperature range 70-127 °C has been studied. At 387 K dc electrical conductivity of pure PVA film is 5.5795 μ Ω⁻¹ cm⁻¹, PVA:Fe³⁺ (5 mol%) film is 10.0936 μ Ω⁻¹ cm⁻¹ and γ-Irradiated PVA:Fe³⁺ (5 mol%) film for 900 CGY/min is 22.1950 μ Ω⁻¹ cm⁻¹. The result reveals the enhancement of the electrical conductivity with γ-irradiation. FT-IR study signifies the intermolecular hydrogen bonding between Fe³⁺ ions of FeCl₃ with OH group of PVA.     

Eu-activated Ba2Mg(BO3)2 yellow-emitting phosphors for near ultraviolet-based light-emitting diodes

A series of Eu²⁺-activated Ba₂Mg(BO₃)₂ yellow phosphors were prepared by a high temperature solid-state reaction. The phosphor emits intense yellow light under near ultraviolet excitation. Large Stokes shift can be attributed to the asymmetric nature of the Eu site and the lack of rigidity in the host. The concentration self-quenching mechanism of Ba₂Mg(BO₃)₂:Eu²⁺ is d-d interaction and the critical transfer distance is calculated to be about 12.29 Å. Prototype light-emitting diodes were fabricated by coating the Ba₂Mg(BO₃)₂:0.07Eu²⁺ phosphor onto ∼370 nm-emitting InGaN chips. The LEDs exhibit intense yellow-emitting under a forward bias of 20 mA. The results indicate that Eu²⁺-activated Ba₂Mg(BO₃)₂ is a candidate as a yellow component for fabrication of near-UV white light-emitting diodes.     

DSC and electrical conductivity studies of (Li1−xKx)2SO4 mixed crystals

Abstract

(Li_1?K_x)₂SO₄ mixed crystals were prepared by the precipitation technique where x = 0.5, 0.7, 0.9 and 0.99. The phase transformations of the mixed crystals have been analyzed by the DSC technique. The DSC curves of (Li_1?xK_x)₂SO₄ mixed crystals reveal that as the potassium content increases the first high temperature phase of the intermediate LiKSO₄ phase at T = 436°C disappears and a two- phase mixture of LiKSO₄ and K₂SO₄ is found for x = 0.7 and 0.9. It is observed from the electrical conductivity measurements of (Li_1?xK_x)₂SO₄ mixed crystals that the electrical conductivity increases as the K₂SO₄ concentration increases with average activation energy of 1.04 eV. The enhancement in the electrical conductivity is primarily a result of the presence of two ionically conducting constituents and the formation of a diffuse space charge layer at the interface region between these two phases.     

Li mobility in Li0.5 − xNaxLa0.5TiO3 perovskites (0 ≤ x ≤ 0.5): Influence of structural and compositional parameters

The dependence of Li mobility on structure and composition of Li_0.5 − xNa_xLa_0.5TiO₃ perovskites (0 ≤ x ≤  0.5) has been investigated by means of neutron diffraction, nuclear magnetic resonance and impedance spectroscopy. At 300 K, all samples display a rhombohedral superstructure (R-3c S.G.), where octahedra are out of phase tilted along [111] direction of the ideal cubic cell. The elimination of the octahedral tilting is responsible for the rhombohedral–cubic transformation, detected near 1000 K. In these perovskites, La and Na cations are randomly distributed in A sites, but Li ions are fourfold coordinated at unit cell faces of the cubic perovskite. Lithium conductivity, σ_300 K, decreases with the sodium content, decreasing from values typical of fast ionic conductors, 10^− 3 S/cm, to those of good insulators, 10^− 10 S/cm, when the interconnectivity between vacant A sites is lost (x > 0.3). In samples with x < 0.3, dc conductivity displays a non-Arrhenius behaviour, decreasing activation energy from ~ 0.37 to 0.25 eV when the sample is heated between 77 and 500 K. The temperature dependence of B_Li factors shows the existence of two regimes for Li motion. Below 373 K, Li ions remain partially located near square oxygen windows that connect contiguous A sites, but above 400 K, extended Li motions become dominant. The additional decrease of activation energy from 0.25 to 0.16 eV (low-temperature ⁷Li NMR value), should require the full elimination of octahedral tilting which is only produced above 1000 °C.     

Studies of structure, thermal, and electrical properties for Cs 5 H 3 (SO 4 ) 4 crystal

Electrical conductivity, differential scanning calorimetry, and X-ray diffraction measurements were performed on a pentacesium trihydrogen tetrasulfate, Cs₅H₃(SO₄)₄, crystal. The transition entropy at a superionic phase transition and the activation energy of proton migrations in the superionic phase were determined to be 58.2 J K⁻¹ mol⁻¹ and 0.48 eV, respectively. The crystal structure of Cs₅H₃(SO₄)₄ at room temperature was refined. The electrical conduction in Cs₅H₃(SO₄)₄ was discussed with the refined structure.     

Pb9AI2F24 fluoride: Phase transition and electrical characterization of the high-temperature form

A phase transition at T _r = 365±10K is shown for Pb₉Al₂F₂₄ by high-temperature X-ray diffraction, microcalorimetric and electrical measurements. The AC conductivity data of Pb₉Al₂F₂₄ are analyzed in the Z*, M* and ε* formalisms and the conductivity relaxation parameters are determined. The high-temperature form of Pb₉Al₂F₂₄ is characterized by an activation energy (Δσ)_h.t. close to that of the (x = 0.12) limiting composition of the Pb_1-.xAl_xF_{2 2+x} solid solution with fluorite-type structure.     

Influence of nanocrystalline phases on the electrical properties of lithium titanate phosphate glass ceramics mixed with Ga2O3 nanocrystals

Several glass ceramic compositions dispersed with Ga₂O₃ nanocrystals, in the series samples (100???x)[0.4Li₂O–0.1TiO₂–0.5P₂O₅]?+?xGa₂O₃ with x?=?0, 2, 4, 6, 8, and 10?mol% of Ga₂O₃ were synthesized via high-energy ball milling technique and labeled as lithium gallium titanate phosphate glass (LTPG _x ) (x is the mol% of Ga₂O₃ nanocrystals). The compositions have been selected on the basis of thermal stability data obtained from differential thermal analysis. X-ray diffraction studies indicate nanocrystalline phase formation in the controlled crystallized glasses. The variation of electrical conductivity was explained in the light of growth of nanocrystalline phases. The best bulk conductivity (σ?=?7.03?×?10^?4?S?cm^?1, at 303?K) was achieved by the sample containing 8?mol% of Ga₂O₃ nanocrystals content, labeled as LTPG₈ sample. The activation energy for conduction (E_{a σ} ) is obtained from the temperature dependent of conductivity data, which is fitted to Arrhenius equation. The single super curve in the scaling spectra suggested the temperature-independent relaxation phenomenon.     

蓝宝石衬底上Gd2O3掺杂CeO2氧离子导体电解质薄膜的生长及电学性能

采用反应磁控溅射方法,在(0001)蓝宝石单晶衬底上,制备了纳米多晶Gd₂O₃掺杂CeO₂(GDC)氧离子导体电解质薄膜,采用X射线衍射仪(XRD)、原子力显微镜(AFM)对薄膜物相、结构、粗糙度、表面形貌等生长特性进行了表征,利用交流阻抗谱仪测试了GDC薄膜不同温度下的电学性能;实验结果表明,GDC薄膜为面心立方结构,在所研究的衬底温度范围内,均呈强(111)织构生长;薄膜表面形貌随衬底温度发生阶段性变化：衬底温度由室温升高到300℃时, 关键词： 2O₃掺杂CeO₂电解质薄膜')" href="#">Gd₂O₃掺杂CeO₂电解质薄膜 反应磁控溅射 生长特性 电学性能     

Synthesis, electrical and dielectric properties of FeVO4 nanoparticles

The electrical and dielectric properties of FeVO₄ nanoparticles were studied at different temperatures from ambient to 200 °C. The samples were prepared by simple co-precipitation method using ferric nitrate and ammonium metavanadate as the starting precursors. The powder X-ray diffraction pattern inferred the single phase formation and triclinic structure of FeVO₄. The morphology of the particles was elucidated from SEM studies. Detailed studies on the electrical and dielectric properties of the compound were carried out by using solid state impedance spectroscopy. A maximum dc conductivity of 4.65×10⁻⁵ S cm⁻¹ was observed at the measuring temperature of 200 °C. The calculated activation energy from dc conductivity was found to be 0.28 eV. It was evident that the electrical transport process in the system was due to the hopping mechanism. The detailed dielectric studies were also carried out.     

Effects of electron beam current density and temperature on peak height ratios Dj/D0 for cathodoluminescence of Ln2O2S:Eu

The change in the initial and steady state (∼0 and 5 s after initiation of electron beam irradiation) peak heights from the ⁵D₂⇒⁷F₃, ⁵D₁⇒⁷F₃ and ⁵D₀⇒⁷F₂ cathodoluminescent transitions from Eu³⁺ have been studied for Ln₂O₂S:Eu³⁺ (Ln=La, Gd) phosphors. Specifically, the intensity ratio of these transitions, designated as ⁵D₁/⁵D₀, increased and then decreased for both La₂O₂S:Eu³⁺ (0.1 mole%) and Gd₂O₂S:Eu³⁺ (0.4 mole%), as the current density was changed from 10 towards a 1000 μA/cm². These effects were shown to be consistent with feeding from the higher ⁵D₂ excited state to the lower energy ⁵D₁ excited state, resulting in an increase of the ⁵D₁/⁵D₀ ratio at low current densities. At higher current densities, energy was funneled from the ⁵D₁-⁵D₀ states, resulting in a decrease of the ⁵D₁/⁵D₀ ratio. These effects of feeding versus funneling were dependent on both the Eu³⁺ concentration and current density, and changed with time (i.e., approached a steady state after ∼5 s) due to increased activator interactions from induced internal electric fields. The magnitude of thermal quenching versus interaction quenching was investigated using changes of the peak height ratios of ⁵D₂/⁵D₀ and ⁵D₁/⁵D₀.     

Metallic alloy precipitates in high dose indium implanted MgO

Abstract

MgO implanted at room temperature with 150keV In⁺ ions and doses ranging from 10¹⁵ to 10¹⁷ ions cm^?2 was studied by optical absorption and transmission electron microscopy (TEM). Creation of defects in the anionic sublattice (F-, F⁺-, F₂-centers) and in the cationic sublattice (V^?-centers) are observed. Subsequent annealings of the implanted crystals have shown different behaviours depending on the implanted dose. For medium dose (2 × 10¹⁶ ions cm^?2), the formation of In³⁺ species seems to be the preponderant phenomenon. At higher dose (8 × 10¹⁶ ions cm^?2), metallic precipitates are formed between 400 and 700°C. The identification of these precipitates has been achieved using TEM: they are formed of a metallic alloy Mg₃In with a hexagonal structure and their orientation relationship with respect to the MgO matrix is: (0001)Mg₃In//(111)Mgo and [1120]_Mg3In// [l10]MgO.     

Radiation-induced swelling and amorphization in Ca2Nd8(SiO4)6O2

Specimens of Ca₂Nd₈(SiO₄)₆O₂ were doped with 1.2 wt% ²⁴⁴Cm and the effects of self-radiation damage from alpha decay were determined as a function of cumulative dose. The macroscopic volume of the specimens increased exponentially with dose to a limiting (saturation) value of ～8.0%. The initially crystalline material became completely X-ray amorphous at a dose of 11.7 × 10²⁴ alpha decays/m³. The dissolution rate of the amorphous state was about an order of magnitude higher than the crystalline state. The stored energy of the amorphous state was ～130 J/g. Differential thermal analysis along with isochronal and isothermal-step annealing were used to study the kinetics associated with the thermal recovery of the radiation-induced swelling and amorphization. A single recovery stage associated with recrystallization of the amorphous material was observed and the activation energy was determined to be 3.1±0.2 eV.