一种基于深刻蚀的硅基周期波导微腔

研究了一种基于深刻蚀的硅基周期波导一维光子晶体微腔,采用时域有限差分(FDTD)方法对设计的微腔结构进行了模拟分析;讨论了深刻蚀对微腔品质因数的影响,计算表明采用深刻蚀可有效地保持高Q值并能保证微腔的机械强度。采用电子束光刻(EBL)结合感应耦合等离子体(ICP)刻蚀制作了绝缘硅(SOI)的周期波导微腔,使用扫描电子显微镜(SEM)和原子力显微镜(AFM)对器件形貌进行表征,观察到深刻蚀的衬底二氧化硅高度约为80 nm。通过波导光栅耦合光纤输入宽带光源信号对微腔器件进行光学表征,传输光谱测试表明该深刻蚀微腔器件Q值达5×103,插入损耗小于-2 d B。该深刻蚀的硅基周期波导微腔可用于集成光传感器和片上波分复用滤波器等应用。     

SOI波导光传输损耗和端面耦合损耗的精确测量与理论分析（英文）

采用法布里-珀罗(Fabry-Perot)谐振腔(也称F-P腔)方法测试SOI波导光传输损耗及其与光纤的端面耦合损耗的测量精度,对具有相同尺寸长度为8.37 mm的三条SOI波导通道进行测量,得到SOI波导光传输损耗和端面耦合损耗的平均值与测量精度值,且测量精度偏差值很小。通过温度的自动控制扫描仪对另一条长度为12.5 mm的SOI波导进行三次重复测量,获得的传输损耗值和端面耦合损耗值相同,说明采用F-P腔方法获得的测量精度值很稳定。建立了SOI波导传输损耗测量精度da/a与F-P腔谐振输出功率极限值消光比的相对误差dtM/tM和SOI波导端面菲涅耳反射系数的相对误差d R/R之间关系的理论模型。模拟结果表明:改变SOI波导上、下包层和芯层折射率,对光传输损耗和波导-光纤端面耦合损耗的测试精度无影响。数值模拟结果与实验测试结果相一致。     

基于六角格子光子晶体波导的高效全光二极管设计

提出了一种基于六角格子光子晶体波导微腔和Fabry-Perot(FP)腔非对称耦合的全光二极管结构, 它由一个包含非线性Kerr介质的高Q值微腔与一个光子晶体波导中的FP腔组成. 通过有限时域差分方法对其传输特性进行了仿真, 发现通过两腔的非对称耦合可以实现在特定光强度下的正向传输、反向截止的功能. 在靠近微腔方向光入射时, 特定强度的光可以激发非线性微腔的Kerr效应, 改变了Fano腔的共振频率, 从而变成透射状态. 而远离微腔方向光入射, 由于这个不对称的结构造成场局域的分布不对称, 激发微腔Kerr效应的光强还不够, 所以光不能透射. 所设计的全光二极管结构具有良好的性能参数: 最大透射率高和高透射比、光强阈值低和易于集成等.     

一种新型高透射率高品质因子光子晶体耦合腔波导结构

提出了一种在二维三角晶格光子晶体线缺陷波导中放置椭圆空气孔的耦合腔波导结构。基于平面波展开法,利用MPB对线缺陷波导的能带结构进行了计算并给出能带图。基于时域有限差分法（FDTD）,利用MEEP对椭圆空气孔在波导中的排列方式、数量、尺寸进行优化设计,并对频率位于微腔共振频率处的光波在耦合腔波导结构中的品质因子和传输特性进行研究与比较,给出了电场分布图。仿真结果表明,当椭圆空气孔的长轴方向纵向排列时,相应的微腔共振频率在光子禁带内可获得90%以上的透射率,对应的品质因子Q可达10⁴量级;选择合适的参数,获得的Q可高达10⁷量级,对应共振频率的透射率仍在60%以上。     

高品质因子和高传输效率的二维光子晶体耦合腔波导研究

基于时域有限差分方法,通过仿真计算设计了一种具有较高品质因子和传输效率的二维光子晶体耦合腔波导结构。通过改变二维光子晶体波导微腔结构中隔绝波导与微腔的空气孔的半径和数量,在获得近似90%的传输效率的同时,使得品质因子达到了8.20×104。为了使品质因子在大幅度提高的同时,传输效率只有小幅度的降低,在波导微腔结构中引入了链式微腔。将链式微腔结构与传统的波导微腔结构相结合,使这种新形式的耦合腔结构的品质因子提高了1个数量级,传输效率仅下降了约40%。     

MIM结构的SPP模式理论与仿真计算研究

为了进一步明确MIM （Metal-insulator-metal）波导结构的SPP （Surface plasmon polariton）模式特性,建立了MIM结构的SPP模式关系、激发系数和反射系数的理论模型。仿真数值计算结果表明：较大的介质厚度的TM基态模式衰减超过了振荡模式衰减,与传统的介质波导明显不同;TE模式表现为失真的介质光波导模式特性,其传播距离要远大于TM₀;MIM结构中腔的Q值随着长度增加而增大,表明了SPP反射受限;腔的品质因数改变与端面关系密切;MIM波导可以在具有更大Q值下确保光波更好地耦合成需要的SPP模式。     

双间隙输出腔开放腔的高频特性分析

 建立了S波段相对论速调管放大器双间隙输出腔开放腔的3维模型。采用时域有限差分法，通过监测激励电流源的响应计算了该双间隙输出腔的谐振频率、有载Q值、场分布以及特性阻抗，并分析了腔体结构尺寸对谐振频率、有载Q值和特性阻抗的影响。研究表明：腔体半径对开放腔的谐振频率影响很大，耦合孔尺寸对腔体谐振频率的影响较小；随着耦合孔张角增加，有载Q值逐渐减小；随着腔体半径增大、间隙的减小，腔体特性阻抗降低。研究结果可为S波段强流相对论速调管放大器双间隙输出腔的设计提供理论依据。     

电光腔倒空与调Q射频波导CO2激光器

报道电光腔倒空与调Q射频波导CO2激光器,获得了电光腔倒空与调Q脉肿激光输出,并用调节电光晶体电压的方法控制腔倒空与调Q脉冲激光峰值功率;调节晶体电压脉冲宽度,可控制腔倒空与调Q激光的脉冲间隔,达到编程输出的目的。理论上分析了电光腔倒空过程。     

一种S波段磁绝缘线振荡器的高频特性研究

 用数值计算的方法计算了S波段磁绝缘线振荡器（S-MILO）的主慢波结构谐振腔的π/4模、π/2模、3π/4模和π模的谐振频率，分别为1.40，2.21，2.46和2.51 GHz；计算出S-MILO封闭腔中的谐振频率依次为1.26，2.04，2.42和2.53 GHz，并计算了本征π模时的Q值。通过监测宽带激励源响应计算出S-MILO开放腔的谐振频率为2.43 GHz。对S-MILO开放腔传输特性研究表明：频率为2.25～3.05 GHz的微波，在第一腔内得到了有效抑制，输出微波的频率范围为2.2～2.5 GHz。通过对其传输特性进行研究，验证了S-MILO的高频电磁结构的合理设计。     

回旋速调管调制腔模拟分析

 多腔回旋速调管中的调制腔采用内外腔同轴结构，对回旋电子注角向群聚起着关键作用。用场匹配理论及HFSS软件对调制腔冷腔特性进行了研究，对多种输入结构、耦合缝尺寸和方位、腔体长度、半径进行了模拟。分析表明，耦合狭缝中心线与输入波导轴线成45°，耦合缝长度达到0.72时，内外腔储能比值达到41.65；耦合缝尺寸对腔体Q值影响较大，但并非呈简单线性关系，并且Q值对缝长的变化比缝宽的变化要敏感得多；而狭缝尺寸变化对谐振频率的影响不大；计算了内外腔储能，得到了模式转换效率高、内外腔储能比高、性能优良的调制腔。     

General theory and design of microwave open resonators

Based on the analysis of wave propagation in a waveguide with slowly varying cross-section, a general theory is developed for microwave open resonators with rotational-symmetric waveguides; this geometry has been extensively used in the gyrotrons. The theoretical analysis is carried through under the most general conditions, that is the cross-section radius r(z) of the resonator is a slowly varying arbitrary function of z and the resonator is open. The general expressions for the resonant frequencies and the Q have been derived. A design method for this kind of open resonator has been proposed. Calculation results for two practical resonators are presented.     

A theory of complex open resonators in the form of cavity chain

The previous theory ((2,6)) of microwave open resonators has been improved, which can be applicable not only to simple cavities, but also to complex cavities. The comparison between calculations and experimental results shows tha the diffraction Q value of an open resonator may be obtained more precisely from the modified theory than one from the previous theory. According to the theory suggested here, many complex cavities, e.g. a complex cavity with a fourcavity chain, have been analyzed and calculated. It is seen that a variety of field profile forms can exist in complex cavities by adjustment of their cavity geometry.     

Coupling and level repulsion in the localized regime: from isolated to quasiextended modes

We study the interaction of Anderson localized states in an open 1D random system by varying the internal structure of the sample. As the frequencies of two states come close, they are transformed into multiply peaked quasiextended modes. Level repulsion is observed experimentally and explained within a model of coupled resonators. The spectral and spatial evolution of the coupled modes is described in terms of the coupling coefficient and Q factors of resonators.     

Effect of diffraction on the electrodynamic characteristics of two-dimensional coaxial Bragg resonators

The electrodynamic properties of coaxial two-dimensional Bragg resonators with two-dimensional distributed feedback are analyzed. These resonators are made of coaxial waveguide sections with doubly periodic corrugation, which provides coupling and mutual scattering of four partial waves. Two of them propagate along the waveguide, while the other two propagate in the transverse (azimuthal) direction. It is shown that the high azimuthal index selectivity of two-dimensional Bragg resonators may be related to a qualitative difference in topology of the dispersion characteristics of azimuth-symmetric and asymmetric normal waves propagating in infinite waveguides of such a geometry. For the finite-length systems used as two-dimensional Bragg resonators, the eigenmode spectrum is found for two types of boundary conditions that correspond to the limiting cases of perfectly matched (open) systems and, conversely, of systems closed for the extraction of transverse electromagnetic fluxes. Perimeter-to-length ratios of the resonator at which the Q factor of the fundamental azimuth-symmetric mode is greater than those of the other modes are determined. The applicability domain of the geometrical approach, which was earlier applied to two-dimensional Bragg resonators, is discussed.     

On the need to allow for variability of RF-field longitudinal structure in calculation of gyrotron efficiency

In high-power gyrotrons with open resonators that have nearly minimal diffraction Q, the longitudinal structure of the RF field can be affected by the electron beam. The need to allow for this effect in determination of the efficiencies of gyrotrons with resonators of conventional shape is investigated. It is shown that over wide ranges of gyrotron-parameter values of greatest practical interest, this effect is fairly small and, therefore, efficiency can be determined assuming a fixed RF-field longitudinal structure.Institute of Applied Physics, Russian Academy of Sciences. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 34, No. 9, pp. 1020–1026, September, 1991.     

A novel matching network employing surface acoustic wave devices for W-CDMA power amplifiers

This paper describes a new approach of designing high Q surface acoustic wave (SAW) resonators as an inductive element in the matching network for W-CDMA power amplifiers (PAs). Spiral inductors based on CMOS/BiCMOS technologies presently possess relatively low Q (typically <10) and occupy a considerably large area. In order to break through the limitations of the spiral inductors, the authors attempt to apply higher Q and wideband SAW resonators employing Cu-grating/15 degrees YX-LiNbO(3)-substrate structure to the matching network for improved PA performance. An analysis was made on SAW resonators in detail, and an SAW resonator having a very small capacitance ratio of 3.28 and moderate Q of 147.8 was developed. After discussing the frequency dependence of the effective inductances, SAW resonators, which are used to be as inductive elements in the matching networks of PAs, were designed and fabricated. The PA including the matching circuit was simulated using the characteristics of the fabricated SAW resonators. The result showed that with better shape factor and good out-of-rejection, the SAW resonators definitely work as an inductive element and could replace widely used spiral inductors.     

基于TM010模介质谐振腔的小型化腔体滤波器

现用于4G基站的介质腔体滤波器都采用TE_01δ模介质谐振腔,虽然其品质因数Q值很高,但体积较大。为了小型化介质腔体滤波器,创新性地使用了TM₀₁₀模介质谐振腔,虽然其Q值比较低,但同样能满足高带外抑制的要求。对TM₀₁₀模介质谐振腔的端口耦合和两腔之间的磁耦合、电耦合进行分析研究,创新性地使用了介质窗的形式产生电耦合,避免了使用飞杆,易于加工,降低制造成本。最后设计了一个8腔TM₀₁₀模准椭圆函数介质腔体带通滤波器,在通带(TD-LTE频带,2570~2620 MHz)两端分别设计两个传输零点以提高带外抑制。调试结果表明,TM₀₁₀模介质腔体滤波器不仅能满足低插损、高带外抑制的要求,而且其体积大幅度缩小。     

缓变波导开放谐振腔的理论分析

本文给出了确定任意纵剖面形状的缓变波导开放谐振腔内各模式谐振频率的普遍关系式。探讨了腔内各谐振模式场的纵向分布函数的求解方法。具体地分析了鼓形腔和双圆锥腔,分别推导了这两种开放腔各模式的固有谐振频率公式以及场的纵向分布函数。理论分析与实验结果甚为一致。     

Planar waveguide-coupled, high-index-contrast, high-Q resonators in chalcogenide glass for sensing

High-index-contrast compact microdisk resonators in thermally evaporated As2S3 and Ge17Sb12S71 chalcogenide glass films are designed and fabricated using standard UV lithography and characterized. Our pulley coupler configuration demonstrates coupling of the resonators to monolithically integrated photonic wire waveguides without resorting to demanding fine-line lithography. Microdisk resonators in As2S3 support whispering-gallery-mode with cavity quality factors (Q) exceeding 2 x 10(5), the highest Q value reported in resonator structures in chalcogenide glasses to the best of our knowledge. We have successfully demonstrated a lab-on-a-chip prototype sensor device with the integration of our resonator with planar microfluidic systems. The sensor shows a refractive index sensitivity of 182 nm/RIU (refractive index unit) and a wavelength resolution of 0.1 pm through a resonant peak fit. This corresponds to a refractive index detection limit of 8 x 10(-7) RIU at 1550 nm in wavelength, which could be further improved by shifting the operating wavelength to a region where water absorption is reduced.     

High Q light-emitting Si-rich Si₃N₄ microdisks

We report on the optical properties of active silicon (Si)-rich Si?N? microdisk cavities in the visible range. We have studied the correlation between the quality (Q) factor of the cavities and the active material deposition parameters. Microphotoluminescence measurements revealed subangstrom whispering galley modes resonances and a maximum Q of 10? around 760 nm. These values improve significantly the best results reported so far for Si-based light-emitting circular resonators in the visible range. In contrast to what is reported for Si-rich SiO?-based microcavities, we demonstrate the absence of a spectral widening at high pump fluxes associated to carrier absorption mechanisms, which allows high emitted power without degrading the Q of the cavity. These results open the route toward the monolithic integration of those structures into more complex circuits including Si photodetectors.