Picosecond laser ablation of nickel-based superalloy C263

Picosecond laser (10.4 ps, 1064 nm) ablation of the nickel-based superalloy C263 is investigated at different pulse repetition rates (5, 10, 20, and 50 kHz). The two ablation regimes corresponding to ablation dominated by the optical penetration depth at low fluences and of the electron thermal diffusion length at high fluences are clearly identified from the change of the surface morphology of single pulse ablated craters (dimples) with fluence. The two corresponding thresholds were measured as F _th(D1)¹=0.68±0.02 J/cm² and F _th(D2)¹=2.64±0.27 J/cm² from data of the crater diameters D _1,2 versus peak fluence. The surface morphology of macroscopic areas processed with a scanning laser beam at different fluences is characterised by ripples at low fluences. As the fluence increases, randomly distributed areas among the ripples are formed which appear featureless due to melting and joining of the ripples while at high fluences the whole irradiated surface becomes grainy due to melting, splashing of the melt and subsequent resolidification. The throughput of ablation becomes maximal when machining at high pulse repetition rates and with a relatively low fluence, while at the same time the surface roughness is kept low.     

Studying condensed phase formed upon interaction between a high-power laser pulse and crystal aluminum oxide

Forms of the condensed phase created under the action of a high-power CO₂ laser pulse (power, 4 J/pulse; λ = 10.6 μm; pulse duration, 1.5 μs) on optical sapphire (Al₂O₃) solid targets are investigated. The ablation products emitted from the laser crater and the particles formed in the space above the surface of the target are collected using witness samples oriented in a predetermined manner with respect to the laser crater. Forms of the condensed phase are studied via electron microscopy and atomic force microscopy. Conclusions are drawn as to the mechanisms of formation of particles with different shapes and structures, including Al₂O₃ vacuum hollow microspheres (hollow bubbles).     

Influence of consecutive picosecond pulses at 532 nm wavelength on laser ablation of human teeth

The interaction of 40 ps pulse duration laser emitting at 532 nm wavelength with human dental tissue (enamel, dentin, and dentin–enamel junction) has been investigated. The crater profile and the surface morphology have been studied by using a confocal auto-fluorescence microscope (working in reflection mode) and a scanning electron microscope. Crater profile and crater morphology were studied after applying consecutive laser pulses and it was found that the ablation depth increases with the number of consecutive pulses, leaving the crater diameter unchanged. We found that the thermal damage is reduced by using short duration laser pulses, which implies an increased retention of restorative material. We observe carbonization of the irradiated samples, which does not imply changes in the chemical composition. Finally, the use of 40 ps pulse duration laser may become a state of art in conservative dentistry.     

An injection-locked single-mode tea CO2 laser for SMM laser pumping

A D₂O laser has been developed for collective Thomson scattering measurements of ion temperature in high temperature plasmas. A pulse duration and a spectral width of a high power D₂O laser has been successfully controlled for this purpose, by using a TEA CO₂ laser injection-locked by an etalon-tuned TEA CO₂ laser as a pump source.     

Laser-induced voltage effects in Ca3Co4O9 thin films on tilted LaAlO3（001） substrates grown by chemical solution deposition

Laser-induced voltage effects in c-axis oriented Ca3Co4O9 thin films have been studied with samples fabricated on 10 tilted LaAlO3(001) substrates by a simple chemical solution deposition method. An open-circuit voltage with a rise time of about 10 ns and full width at half maximum of about 28 ns is detected when the film surface is irradiated by a 308-nm laser pulse with a duration of 25 ns. Besides, open-circuit voltage signals are also observed when the film surface is irradiated separately by the laser pulses of 532 nm and 1064 nm. The results indicate that Ca3Co4O9 thin films have a great potential application in the wide range photodetctor from the ultraviolet to near infrared regions.     

长脉冲激光辐照下环氧树脂的热烧蚀规律

 研究了树脂基复合材料中常用的E-51环氧树脂在ms级脉冲激光辐照下热烧蚀率及质量烧蚀率的变化规律,分析了脉冲激光的辐照时间、峰值功率密度、重复频率以及脉宽对烧蚀率的影响。研究结果表明：随辐照时间的增加热烧蚀率逐渐增大,但辐照一定时间后,热烧蚀率趋于稳定;峰值功率密度的增加能明显提高热烧蚀率,但随峰值功率密度的增加,热烧蚀率的增幅减小直至趋于一定值;热烧蚀率不随脉冲激光重复频率和脉宽的变化而改变,当峰值功率密度一定时,热烧蚀率一定,质量烧蚀率与频率和脉宽成正比。     

Morphology of ablation craters generated by fs laser pulses in LiNbO3

The surface morphology of the ablation craters generated in LiNbO₃ by 130 fs laser pulses at 800 nm has been investigated by AFM/SNOM microscopy. The single pulse fluence corresponding to the ablation threshold has been estimated to be ≈1.8 J/cm².A complex structure including random cone-shaped protrusions is observed inside the ablated crater. The scale of the protrusion spacing is in the submicron range and the heights are typically of a few tens of nanometers. At and outside the crater rim a novel quasi-periodic wave-like topography pattern is observed in both types of microscopy techniques. The average wavelength, that is slightly dependent on pulse fluence, is (500-800 nm) comparable to the light wavelength. This novel topography feature keeps a close similarity with a Fresnel diffraction pattern by an absorbing circular obstacle or impact wave pattern produced by a combination of heat and shock wave (resemble that of impact crater). It is proposed that the obstacle is associated to the strongly nonlinear multiphoton absorption at the peak of the pulse profile. The energy deposited by nonlinear absorption of such profile causes ablation of both the crater and the rippled structure.     

CO_2激光预处理参数对石英基片表面粗糙度的影响

为研究CO2激光预处理参数对熔石英基片表面粗糙度的影响,采用频率为100 Hz,光斑面积为1 mm2的CO2激光对理想的熔石英基片进行辐照处理,根据处理后基片表面微观形貌特征将修复程度分别定义为轻度、中度和重度修复,并对3种修复程度下基片的表面粗糙度值进行了统计。研究了不同脉冲作用时间和不同占空比(激光功率)的激光束单点单次辐照基片后的表面粗糙度。结果表明:石英基片的表面粗糙度均方根值和处理造成的凹陷深度均随脉冲作用时间和功率的增加逐渐变大;均方根值的增幅逐渐增加,凹陷深度的增幅逐渐减小。     

Femtosecond laser ablation characteristics of nickel-based superalloy C263

Femtosecond laser (180 fs, 775 nm, 1 kHz) ablation characteristics of the nickel-based superalloy C263 are investigated. The single pulse ablation threshold is measured to be 0.26±0.03 J/cm² and the incubation parameter ξ=0.72±0.03 by also measuring the dependence of ablation threshold on the number of laser pulses. The ablation rate exhibits two logarithmic dependencies on fluence corresponding to ablation determined by the optical penetration depth at fluences below ∼5 J/cm² (for single pulse) and by the electron thermal diffusion length above that fluence. The central surface morphology of ablated craters (dimples) with laser fluence and number of laser pulses shows the development of several kinds of periodic structures (ripples) with different periodicities as well as the formation of resolidified material and holes at the centre of the ablated crater at high fluences. The debris produced during ablation consists of crystalline C263 oxidized nanoparticles with diameters of ∼2–20 nm (for F=9.6 J/cm²). The mechanisms involved in femtosecond laser microprocessing of the superalloy C263 as well as in the synthesis of C263 nanoparticles are elucidated and discussed in terms of the properties of the material.     

Periodic adjustment of the position of a laser beam spot on a semiconductor saturable absorber mirror in a passively mode-locked solid-state laser

A laser diode end-pumped passively mode-locked Nd:YVO₄ solid-state laser with a semiconductor saturable absorber mirror (SESAM), in which the intracavity laser beam spot on the SESAM can be adjusted periodically, is investigated. Inserting a rectangular prism (RP) into the laser cavity is a promising approach towards the goal of periodically moving the position of the focus spot of the intracavity pulse on the SESAM surface to avoid the long-time irradiation of the laser beam on the same position, thereby solving a series of problems caused by damage to the SESAM and greatly prolonging its usage life. The adjustment of the rectangular prism in the laser cavity does not break the stable continuous wave (CW) mode-locked condition. The laser generates a stable picosecond pulse sequence at 1064 nm with an output power of 3.6 W and a pulse width of 14 ps. The instabilities of the output power and the pulse width are 1.77% and 4.5%, respectively.     

Diode-pumped doubly Q-switched Nd:LuVO4 laser with AO modulator and GaAs saturable absorber

A diode-pumped doubly Q-switched Nd:LuVO₄ laser with an acousto-optic (AO) modulator and GaAs saturable absorber has been realized. The pulse profile of the doubly Q-switched Nd:LuVO₄ laser has an almost absolutely symmetric shape. The dependences of pulse width, single-pulse energy and peak power on the incident pump power under different AO repetition rates are measured. By considering the transverse Gaussian distribution of the intracavity photon density and the longitudinal distribution of photon density along the cavity axis, the coupled rate equations of the laser are given. These coupled rate equations are solved numerically and the theoretical results are in agreement with the experimental results.     

高能电子与超强激光束作用产生的阿秒脉冲列

利用非线性汤姆孙散射的理论，从理论和数值模拟上研究了单电子在横向穿越高斯激光束束 腰时所辐射的x射线阿秒脉冲列的性质. 主要分析了电子以初始能量γ₀=1M eV—100M eV横向穿越激光振幅参数为a₀=1—10的高斯光束束腰获得的阿秒辐射脉冲的 时间 和空间性质. 计算表明，辐射呈现脉冲列的形式. 脉冲列的包络宽度取决于激光强度、束腰 的宽度以及入射电子能量. 电子的初始能量比激光强度对电子辐射脉冲的影响更大. 辐射脉 宽、脉冲间隔和脉冲包络宽度都正比于1/γ²₀，辐射功率正比于 γ⁶₀，辐射能 量正比于γ⁴₀. 当改变激光振幅a₀时，辐射功率正比 于a²₀、辐射包络中单 个脉冲脉宽正比于1/a₀、脉冲之间的间隔正比于a₀. 当保持激光强 度不变，而改变光束 束腰半径w₀时，辐射的脉冲数量、包络和辐射能量正比于w₀. 当 激光功率保 持不变时而改变激光强度和束腰半径时，脉冲包络宽度和最大辐射能量都基本不变. 当激光 振幅参数a₀=1，电子初始能量为10MeV时，激光束腰为两个激光波长时，电子 辐 射脉冲包络宽度只有14×10^-3τ₀（τ₀为入 射激光周期），达到几个阿秒的量级. 关键词： 阿秒脉冲 非线性汤姆孙散射 高斯激光光束     

Pulse width compression and enhancement of peak power in a diode-pumped doubly Q-switched Nd:GdVO<Subscript>4</Subscript> 1.34 μm laser with AO and V<Superscript>3+</Superscript>:YAG saturable absorber

By using both acousto-optic (AO) modulator and V³⁺:YAG saturable absorber, a diode-pumped doubly Q-switched a-cut Nd:GdVO₄ laser at 1.34 μm is realized. The average output power and the pulse width for different AO repetition rate f have been measured. The experimental results show that the doubly Q-switched laser can compress the pulse width and improve the pulsed peak power in comparison to the singly Q-switched laser with AO or V³⁺:YAG saturable absorber. At the pump power 10.34 W and f = 10 kHz, the greatest pulse width compression ratio 72% and the highest peak power improvement 8.8 times have been obtained, respectively.     

Co:LaMgAl11O19 saturable absorber Q-switch for a 1.319 μm Nd:YAG laser

Passively Q-switched output of a flashlamp-pumped 1.319 μm Nd:YAG laser is realized by using Co²⁺:LaMgAl₁₁O₁₉ (Co:LMA) as saturable absorber. When initial transmission of the saturable absorber T₀ is 78%, a Q-switched output pulse with pulse width (FWHM) 44.8 ns and pulse energy 17.4 mJ is obtained, corresponding to 19.3% of the free-running energy under the equal pumping energy of 45.4 J. The experimental results show that the higher T₀ will result in a lower pumping threshold of the laser, but lower T₀ can make the laser generate pulses with higher single-pulse energy, narrower pulse width, and accordingly higher peak power.     

Control of material removal of fused silica with single pulses of few optical cycles to sub-picosecond duration

Surface ablation of a dielectric material (fused silica) by single femtosecond pulses is studied as a function of pulse duration (7–450 fs) and applied fluence (F _th<F<10F _th). We show that varying the pulse duration gives access to high selectivity (with resolution ∼10 nm) for axial removal of matter but does not influence the transverse ablation selectivity, which only depends on the normalized applied fluence F/F _th. The ablation efficiency is shown to be inversely dependent on the pulse duration and saturates with respect to the applied fluence earlier at ultra-short pulse durations (≤30 fs). The deduced optimal fluence F _opt corresponding to the highest ablation efficiency for each pulse width defines two regimes of laser application. Below F _opt, the removed material depth can be accurately adjusted in a large range (∼40–200 nm) as a function of the applied fluence and the morphology of the ablated pattern almost reproduces the Gaussian beam distribution. Above F _opt, the material removal depth tends to saturate and the morphology of the ablated pattern evolves to a top-hat distribution. The coupled evolution of depth and morphology is related to the dynamics of formation of dense plasma at the surface of the material, acting as an ultra-fast optical shutter.     

Quantum dynamical study of the amplitude collapse and revival of coherent <Emphasis Type="Italic">A</Emphasis><Subscript>1g</Subscript> phonons in bismuth: a classical phenomenon?

We parameterize the potential energy surface of bismuth after intense laser excitation using accurate full-potential linearized augmented plane wave calculations. Anharmonic contributions up to the fifth power in the A _1g phonon coordinate are given as a function of the absorbed laser energy. Using a previously described model including effects of electron–phonon coupling and carrier diffusion due to Johnson et al., we obtain the time-dependent potential energy surface for any given laser pulse shape and duration. On the basis of this parameterization we perform quantum dynamical simulations to study the experimentally observed amplitude collapse and revival of coherent A _1g phonons in bismuth considering work of Misochko et al. Our results strongly indicate that the observed beatings are not related to quantum effects and are most probably of classical origin.     

Diode-pumped doubly Q-switched mode-locked YVO4/Nd:YVO4 laser with AO and GaAs saturable absorber

By using both acousto-optic (AO) modulator and GaAs saturable absorber, a diode-pumped doubly Q-switched and mode-locked (QML) YVO₄/Nd:YVO₄ laser is presented. The average output power and the pulse width of the Q-switched envelope have been measured. The Q-switch pulse energy of the doubly QML laser are higher than that only with GaAs. The stability of the QML laser with the dual-loss-modulation is significantly improved if compared to that only with GaAs.The experimental results show that the doubly QML YVO₄/Nd:YVO₄ laser has nearly 80% modulation depth and deeper than that of the singly passively QML pulse. The doubly Q-switched mode-locked pulse inside the Q-switched envelope has a repetition rate of 111 MHz and its pulse width is estimated to be about 700 ps. By using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled equations for diode-pumped dual-loss-modulated QML laser is given and the numerical solutions of the equations are in good agreement with the experimental results.     

Pulse compression in AO Q-switched diode-pumped Nd:GdVO4 laser with V3+:YAG saturable absorber

By simultaneously using both an acoustic-optic (AO) modulator and a V³⁺:YAG saturable absorber in the cavity, for the first time to our knowledge, a diode-pumped doubly Q-switched Nd:GdVO ₄ laser has been realized. The dependence of pulse width, pulse energy and peak power on the incident pump power at determinate pulse repetition rate are measured. Under the absorbed pump power of 8.59 W, the pulse temporal profile of the AO-switching with the pulse duration of 14.5 ns, the double Q-switching with pulse duration of 7.6 ns at 10 kHz, and the passive Q-switching with pulse duration of 22.3 ns are obtained. The pulse duration is obviously compressed in contrast to the purely actively AO Q-switched laser or the purely passively Q-switched laser with V³⁺:YAG.     

Study of modulation property to incident laser by surface micro-defects on KH2PO4 crystal

KH₂PO₄ crystal is a crucial optical component of inertial confinement fusion. Modulation of an incident laser by surface micro-defects will induce the growth of surface damage, which largely restricts the enhancement of the laser induced damage threshold. The modulation of an incident laser by using different kinds of surface defects are simulated by employing the three-dimensional finite-difference time-domain method. The results indicate that after the modulation of surface defects, the light intensity distribution inside the crystal is badly distorted, with the light intensity enhanced symmetrically. The relations between modulation properties and defect geometries (e.g., width, morphology, and depth of defects) are quite different for different defects. The modulation action is most obvious when the width of surface defects reaches 1.064 μ. For defects with smooth morphology, such as spherical pits, the degree of modulation is the smallest and the light intensity distribution seems relatively uniform. The degree of modulation increases rapidly with the increase of the depth of surface defects and becomes stable when the depth reaches a critical value. The critical depth is 1.064 μ for cuboid pits and radial cracks, while for ellipsoidal pits the value depends on both the width and the length of the defects.     

Pulse compression in diode-pumped doubly Q-switched Nd:GdVO<Subscript>4</Subscript> laser with both V<Superscript>3+</Superscript>:YAG and Co<Superscript>2+</Superscript>:LMA saturable absorber

By simultaneously using both a V³⁺:YAG and a Co²⁺:LaMgAl₁₁O₁₉ saturable absorber in the cavity, for the first time to our knowledge, a diode-pumped doubly Q-switched Nd:GdVO₄ laser has been realized. The dependence of pulse width, pulse repetition rate, pulse energy and peak power on the incident pump power are measured. Under the absorbed pump power of 8.59 W, both the pulse temporal profile of the passive double-switching with the pulse width of 25.29 ns, and the passive single-switching just using V³⁺:YAG with pulse width of 30.46 ns are obtained. The pulse duration is partly compressed in contrast to the purely passively Q-switched laser with V³⁺:YAG.