Theoretical analysis of surface plasmon resonance based fiber optic sensor using indium nitride

An extremely sensitive surface plasmon resonance based fiber optic sensor with indium nitride (InN) layer coated on the core of the optical fiber is theoretically analyzed. The proposed sensor exhibits high sensitivity in the near infrared region of spectrum. The optimized value of thickness of InN layer is found to be 70 nm. Possessing high sensitivity of 4493 nm/RIU, the 70 nm thick InN layer based fiber optic SPR sensor illustrates good sensing behavior.     

Influence of dopants on the performance of a fiber optic surface plasmon resonance sensor

In this paper, a theoretical analysis is carried out to estimate the sensitivity and the signal-to-noise ratio (SNR) of a fiber optic surface plasmon resonance (SPR) sensor when fibers with different dopants and different doping concentrations are used. The dopants considered are germanium oxide (GeO₂), boron oxide (B₂O₃), and phosphorus pentoxide (P₂O₅) in a pure silica fiber. The variation of the dispersion relation with different dopants and doping concentrations are taken into account for the analysis. It is shown that the doping of B₂O₃ increases the sensitivity of the sensor while the effect of dopant on SNR is negligible. The analysis is extended to fiber optic SPR sensor with bimetallic layers.     

Towards anode with low indium content as effective anode in organic solar cells

In₂O₃ thin films (100 nm thick) have been deposited by reactive evaporation of indium, in an oxygen partial atmosphere. Conductive (σ = 3.5 × 10³ S/cm) and transparent films are obtained using the following experimental conditions: oxygen partial pressure = 1 × 10⁻¹ Pa, substrate temperature = 300 °C and deposition rate = 0.02 nm/s. Layers of this In₂O₃ thick of 5 nm have been introduced in AZO/In₂O₃ and FTO/In₂O₃ multilayer anode structures. The performances of organic photovoltaic cells, based on the couple CuPc/C₆₀, are studied using the anode as parameter. In addition to these bilayers, other structures have been used as anode: AZO, FTO, AZO/In₂O₃/MoO₃, FTO/In₂O₃/MoO₃ and FTO/MoO₃. It is shown that the use of the In₂O₃ film in the bilayer structures improves significantly the cell performances. However the open circuit voltage is quite small while better efficiencies are achieved when MoO₃ is present. These results are discussed in the light of surface roughness and surface work function of the different anodes.     

Temperature-dependent linear or nonlinear gas sensing characteristics of In2O3 mixed α-Fe2O3 nanorods with high sensitivity

Highly sensitive gas sensors are realized from In₂O₃ mixed α-Fe₂O₃ nanorods. At 200 °C, the sensitivity of the sensors upon exposure to 200 ppm ethanol is 31.3, and the sensors exhibit linear dependence of the sensitivity on the ethanol concentration at 100 °C and 200 °C. In contrast, nonlinear gas sensing characteristics are observed at 300 °C and 400 °C. The relationship between sensitivity and ethanol concentration is discussed by using the conduction model, and the experimental data are in good agreement with the obtained equations. Our results imply that In₂O₃ mixed α-Fe₂O₃ nanorods are good candidates for nano-scale gas sensors and the relationship between sensitivity and ethanol concentration is significantly influenced by temperatures.     

Synthesis of ultrafine single crystals and nanostructured coatings of indium oxide from solution precursor

Indium oxide (In₂O₃) has been widely used in sensors, solar cells and microelectronics. There are several techniques available for making In₂O₃ such as vapor, electrochemical and atomic layer deposition, which are not only expensive but also time consuming processes. In this study, an inexpensive and straightforward synthesis approach is being presented to make micron/submicron size single crystals as well as nanostructured adherent coatings of In₂O₃ using Indium Chloride (InCl₃) powders and InCl₃ solution precursor. Both the powders and the solution precursor were calcined in a furnace to obtain the crystals; however, the liquid precursor was also treated by a DC plasma jet to obtain the nanostructured coatings. The phase transformations during thermal decomposition of InCl₃ powders and solution precursor were investigated via differential scanning calorimetry studies. The phase structure and crystallinity of the crystals and coatings were confirmed by X-ray diffraction. Microstructural characterization of the crystals and coatings was done by scanning electron microscopy, transmission electron microscopy and atomic force microscopy techniques. Size of the crystals was observed to be dependent on the heating schemes adapted during calcination. Solution precursor plasma sprayed In₂O₃ coatings showed porosity and ultrafine particulates with grain size ranging between 10 and 75 nm. Resistivity was determined to be ∼0.553 ± 0.337 kΩ cm. Optical transmittance of In₂O₃ coatings was ∼60-78% in the visible region and it was observed to decrease with increasing the number passes or the thickness of the coatings. Based on the optical transmission data, direct band gap of 3.57 eV was determined.     

Synthesis and performance of core-shell structured ZnO/In2O3 composites in situ growth

Core-shell structured ZnO/In₂O₃ composites were successfully synthesized via situ growth method. Phase structure, morphology, microstructure and property of the products were investigated by X-ray diffraction (XRD), TG-DTA, field emission scanning electron microscopy (FESEM), energy-dispersive spectrometry (EDS), transmission electron microscope (TEM) and photoluminescence (PL). Results show that the core-shell structures consist of spindle-like ZnO with about 800 nm in length and 200 nm in diameter, and In₂O₃ particles with a diameter of 50 nm coated on the surface of ZnO uniformly. HMTA plays an important role in the formation of core-shell structures and the addition of In₂O₃ has a great effect on PL spectrum. Possible mechanism for the formation of core-shell structures is also proposed in this paper.     

Analysis of fiber optic SPR sensor utilizing platinum based nanocomposites

SPR based fiber optic sensor using nanocomposite is presented. Nanocomposites comprising of Pt nanoparticles with various volume fractions embedded in dielectric matrices of TiO₂ and SnO₂ are considered. Sensitivity enhances with increase in thickness of nanocomposite and volume fraction of nanoparticles for both nanocomposites. Optimized thicknesses are obtained to be 40 and 50 nm for Pt–TiO₂ and Pt–SnO₂ nanocomposites respectively while optimized volume fraction is found to be 0.85 for both nanocomposites. 40 nm thick Pt–TiO₂ nanocomposite based sensor with 0.85 volume fraction possesses utmost sensitivity.     

Structure and ultrafast ethanol sensing properties of In2O3-capped Zn-doped Fe2O3 nanorods

This paper reports the facile synthesis of In₂O₃-capped Zn-doped Fe₂O₃ nanorods along with their ethanol gas sensing properties. A two-stage process involving thermal oxidation of Fe foils and Zn powders in air and the sputter-deposition of In₂O₃ was used to synthesize these nanostructures. The nanorods synthesized using this method were ∼5 μm in length and 50–120 nm in diameter with a shell layer thickness of 10–15 nm. The multiple-networked In₂O₃-capped Zn-doped Fe₂O₃ nanorod sensor showed a significantly enhanced and ultrafast response to ethanol gas. The enhanced sensing performance was explained by modulation of the potential barrier height and the strong catalytic activity of In₂O₃ for ethanol oxidation.     

Characterization of interface between CuInSe2 and In2O3

CuInSe₂/In₂O₃ structures were formed by depositing CuInSe₂ films by stepwise flash evaporation onto In₂O₃ films, which were grown by DC reactive sputtering of In target in presence of (Ar+O₂) gas mixture. Phase purity of the CuInSe₂ and In₂O₃ films was confirmed by Transmission Electron Microscopy (TEM) studies. X-ray diffraction (XRD) results on CuInSe₂/In₂O₃/glass structures showed sharp peaks corresponding to (112) plane of CuInSe₂ and (222) plane of In₂O_3. Rutherford Backscattering Spectrometry (RBS) investigations were carried out on CuInSe₂/In₂O₃/Si structures in order to characterize the interface between In₂O₃ and CuInSe₂. The results show that the CuInSe₂ films were near stoichoimetric and In₂O₃ films had oxygen deficient composition. CuInSe₂/In₂O₃ interface was found to include a ∼20 nm thick region consisting of copper, indium and oxygen. Also, the In₂O₃/Si interface showed the formation of ∼20 nm thick region consisting of silicon, indium and oxygen. The results are explained on the basis of diffusion/reaction taking place at the respective interfaces.     

Characterization of single-crystalline In2O3 films deposited on Y-stabilized ZrO2 (1 0 0) substrates by MOCVD

Epitaxial In₂O₃ films have been deposited on Y-stabilized ZrO₂ (YSZ) (1 0 0) substrates by metalorganic chemical vapor deposition (MOCVD). The films were deposited at different substrate temperatures (450-750 °C). The film deposited at 650 °C has the best crystalline quality, and observation of the interface area shows a clear cube-on-cube epitaxial relationship of In₂O₃(1 0 0)||YSZ(1 0 0) with In₂O₃[0 0 1]||YSZ[0 0 1]. The Hall mobility of the single-crystalline In₂O₃ film deposited at 650 °C is as high as 66.5 cm² V⁻¹ s⁻¹ with carrier concentration of 1.5 × 10¹⁹ cm⁻³ and resistivity of 6.3 × 10⁻³ Ω cm. The absolute average transmittance of the obtained films in the visible range exceeds 95%.     

Waveband-switchable multiwavelength mixed-cascaded phosphosilicate raman fiber lasers

In this paper, the mixed-cascaded Raman scattering has been developed to investigate multiwavelength phosphosilicate Raman fiber lasers (MRFLs). With a tunable Yb³⁺-doped double-clad fiber laser (YDCFL) as the Raman pump source, we propose a compact and waveband-switchable (from the O- to U-band) MRFL using two- or three-mixed-cascaded Raman scattering of both SiO₂/GeO₂ and P₂O₅ in a P-doped fiber. We also confirm experimentally the feasibility of the proposed mixed-cascaded MRFL. When a 1064 nm YDCFL was used to pump a spool of 1-km P-doped fiber, the compact linear-cavity MRFLs in the O- and L-band operation were obtained, respectively, based on the two- and three-mixed cascaded Raman scattering. Up to 16-wavelength stable oscillation around 1320 nm has been observed with a spacing of 0.40 nm and an extinction ratio >30 dB. 12 lasing lines around 1601 nm have also been achieved with a spacing of 0.58 nm. The multiwavelength output powers as high as 108 and 138 mW were obtained in the O- and L-band operations, respectively. The wavelength spacing of the MRFLs is flexibly adjustable, and the peak wavelength of each lasing line is continuously tunable over the wavelength spacing. In addition, the important characteristics of the mixed-cascaded MRFLs, including the linewidth broadening, the signal-to-noise ratio and the conversion efficiency, are discussed.     

The role of oxygen and hydrogen partial pressures on structural and optical properties of ITO films deposited by reactive rf-magnetron sputtering

Sn doped In₂O₃ films are deposited by rf-magnetron sputtering at 300 °C under Ar, Ar + O₂ and Ar + H₂ gas ambients. For the film prepared under argon ambient, electrical resistivity 6.5 × 10⁻⁴ Ω cm and 95% optical transmission in the visible region have been achieved optimizing the power and chamber pressure during the film deposition. X-ray diffraction spectra of the ITO film reveal (2 2 2) and (4 0 0) crystallographic planes of In₂O₃. With the introduction of 1.33% oxygen in argon, (2 2 2) peak of In₂O₃ decreases and resistivity increases for the deposited film. With further increase of oxygen in the sputtering gas mixture crystallinity in the film deteriorates and both the peaks disappeared. On the other hand, when 1.33% hydrogen is mixed with argon, the resistivity of the deposited film decreases to 5.5 × 10⁻⁴ Ω cm and the crystallinity remains almost unchanged. In case of reactive sputtering, the deposition rate is lower compared to that in case of non-reactive sputtering. HRTEM and first Fourier patterns show the highly crystalline structure of the samples deposited under Ar and Ar + H₂ ambients. Crystallinity of the film becomes lower with the introduction of oxygen in argon but refractive index increases from 1.86 to 1.9. The surface morphology of the ITO films have been studied by high resolution scanning electron microscopy.     

Low temperature deposition of transparent conducting ITO/Au/ITO films by reactive magnetron sputtering

Transparent conducting indium tin oxide/Au/indium tin oxide (ITO) multilayered films were deposited on unheated polycarbonate substrates by magnetron sputtering. The thickness of the Au intermediated film varied from 5 to 20 nm. Changes in the microstructure, surface roughness and optoelectrical properties of the ITO/Au/ITO films were investigated with respect to the thickness of the Au intermediated layer. X-ray diffraction measurements of ITO single layer films did not show characteristic diffraction peaks, while ITO/Au/ITO films showed an In₂O₃ (2 2 2) characteristic diffraction peak. The optoelectrical properties of the films were also dependent on the presence and thickness of the Au thin film. The ITO 50 nm/Au 10 nm/ITO 40 nm films had a sheet resistance of 5.6 Ω/□ and an average optical transmittance of 72% in the visible wavelength range of 400-700 nm. Consequently, the crystallinity, which affects the optoelectrical properties of ITO films, can be enhanced with Au intermediated films.     

Optical properties of In2O3 oxidized from InN deposited by reactive magnetron sputtering

Unintentionally doped and zinc-doped indium nitride (U-InN and InN:Zn) films were deposited on (0 0 0 1) sapphire substrates by radio-frequency reactive magnetron sputtering, and all samples were then treated by annealing to form In₂O₃ films. U-InN and InN:Zn films have similar photon absorption characteristics. The as-deposited U-InN and InN:Zn film show the absorption edge, ∼1.8-1.9 eV. After the annealing process at 500 °C for 20 min, the absorption coefficient at the visible range apparently decreases, and the absorption edge is about 3.5 eV. Two emission peaks at 3.342 eV (371 nm) and 3.238 eV (383 nm) in the 20 K photoluminescence (PL) spectrum of In₂O₃:Zn films were identified as the free-exciton (FE) or the near band-to-band (B-B) and conduction-band-to-acceptor (C-A) recombination, respectively.     

Effect of crystallinity of Co layer on perpendicular exchange bias in Au-capped ultrathin Co film on Cr2O3(0 0 0 1) thin film

The effect of the crystalline quality of ultrathin Co films on perpendicular exchange bias (PEB) has been investigated using a Au/Co/Au/α-Cr₂O₃ thin film grown on a Ag-buffered Si(1 1 1) substrate. Our investigation is based on the effect of the Au spacer layer on the crystalline quality of the Co layer and the resultant changes in PEB. An α-Cr₂O₃(0 0 0 1)layer is fabricated by the thermal oxidization of a Cr(1 1 0) thin film. The structural properties of the α-Cr₂O₃(0 0 0 1) layer including the cross-sectional structure, lattice parameters, and valence state have been investigated. The fabricated α-Cr₂O₃(0 0 0 1) layer contains twin domains and has slightly smaller lattice parametersthan those of bulk-Cr₂O₃. The valence state of the Cr₂O₃(0 0 0 1) layer is similar to that of bulk Cr₂O₃. The ultrathin Co film directly grown on the α-Cr₂O₃(0 0 0 1) deposited by an e-beam evaporator is polycrystalline. The insertion of a Au spacer layer with a thickness below 0.5 nm improves the crystalline quality of Co, probably resulting in hcp-Co(0 0 0 1). Perpendicular magnetic anisotropy (PMA) appears below the Néel temperature of Cr₂O₃ for all the investigated films. Although the PMA appears independently of the crystallinequality of Co, PEB is affected by the crystalline quality of Co. For the polycrystalline Co film, PEB is low, however, a high PEB is observed for the Co films whose in-plane atom arrangement is identical to that of Cr³⁺ in Cr₂O₃(0 0 0 1). The results are qualitatively discussed on the basis of the direct exchange coupling between Cr and Co at the interface as the dominant coupling mechanism.     

Structural relation and epitaxial properties of hexagonal InN and oxidized cubic In2O3

The epitaxial properties and structural relation between hexagonal InN and cubic In₂O₃ phases were studied by synchrotron X-ray scattering and X-ray photoelectron spectroscopy. The cubic bixbyite In₂O₃ phase on the sapphire(0001) substrate was formed after an annealing time of 10 min at 10⁻⁵ Torr after the hexagonal InN film was grown at 550 °C, above the dissociation temperature of InN, by RF-magnetron sputtering. The crystal orientation was cubic In₂O₃(222), parallel to Al₂O₃(0001) and parallel to hexagonal InN(0002) before the oxidation process. The cubic In₂O₃ phase was believed to be formed layer by layer by the oxidation of the hexagonal InN phase.     

Fabrication and characterization of Pt intermediate transparent and conducting ITO/Pt/ITO multilayer films

Platinum intermediate transparent and conducting ITO/metal/ITO (IMI) multilayered films were deposited by RF and DC magnetron sputtering on polycarbonate substrates without intentional substrate heating. Changes in the microstructure and optoelectrical properties of the films were investigated with respect to the thickness of the intermediate Pt layer in the IMI films. The thickness of Pt film was varied from 5 to 20 nm.In XRD measurements, neither ITO single-layer films nor IMI multilayer films showed any characteristic diffraction peaks for In₂O₃ or SnO₂. Only a weak diffraction peak for Pt (1 1 1) was obtained in the XRD spectra. Thus, it can be concluded that the Pt-intermediated films in the IMI films did not affect the crystallinity of the ITO films. However, equivalent resistivity was dependent on the presence and thickness of the Pt-intermediated layer. It decreased as low as 3.3×10⁻⁴ Ω cm for ITO 50 nm/Pt 20 nm/ITO 30 nm films. Optical transmittance was also strongly influenced by the Pt-intermediated layer. As Pt thickness in the IMI films increased, optical transmittance decreased to as low as 30% for ITO 50 nm/Pt 20 nm/ITO 30 nm films.     

Synthesis and materials properties of transparent conducting In2O3 films prepared by sol-gel-spin coating technique

Transparent conducting indium oxide (In₂O₃) thin films have been prepared on glass substrates by the simple sol-gel-spin coating technique. These films have been characterized by X-ray diffraction, resistivity and Hall effect measurements, optical transmission, scanning electron microscopy and atomic force microscopy for their structural, electrical, optical and morphological properties. The influence of spin parameters, number of coating, process temperature on the quality of In₂O₃ films are studied. In the operating range of deposition, 400-475 °C, all the films showed predominant (2 2 2) orientation. Films deposited at optimum process conditions exhibited a resistivity of 2×10⁻² Ω cm along with the average transmittance of about 80% in the visible spectral range (400-700 nm).     

Dependence of intermediated noble metals on the optical and electrical properties of ITO/metal/ITO multilayers

Sn doped In₂O₃ (ITO) single layer and a sandwich structure of ITO/metal/ITO (IMI) multilayer films were deposited on a polycarbonate substrate using radio-frequency and direct-current magnetron sputtering process without substrate heating. The intermediated metal films in the IMI structure were Au and Cu films and the thickness of each layer in the IMI films was kept constant at 50 nm/10 nm/40 nm. In this study, the ITO/Au/ITO films show the lowest resistivity of 5.6 × 10⁻⁵ Ω cm.However the films show the lower optical transmission of 71% at 550 nm than that (81%) of as deposited ITO films. The ITO/Cu/ITO films show an optical transmittance of 54% and electrical resistivity of 1.5 × 10⁻⁴ Ω cm. Only the ITO/Au/ITO films showed the diffraction peaks in the XRD pattern. The figure of merit indicated that the ITO/Au/ITO films performed better in a transparent conducting electrode than in ITO single layer films and ITO/Cu/ITO films.     

Structural and optical properties of Ga2(1−x)In2xO3 films prepared on α-Al2O3 (0 0 0 1) by MOCVD

Ga_2(1−x)In_2xO₃ thin films with different indium content x [In/(Ga + In) atomic ratio] were prepared on α-Al₂O₃ (0 0 0 1) substrates by the metal organic chemical vapor deposition (MOCVD). The structural and optical properties of the Ga_2(1−x)In_2xO₃ films were investigated in detail. Microstructure analysis revealed that the film deposited with composition x = 0.2 was polycrystalline structure and the sample prepared with x up to 0.8 exhibited single crystalline structure of In₂O₃. The optical band gap of the films varied with increasing Ga content from 3.72 to 4.58 eV. The average transmittance for the films in the visible range was over 90%.