首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 93 毫秒
1.
采用密度泛函B3LYP(Becke, three-parameter, Lee-Yang-Parr)和HF(Hatree-Fock)方法, 从理论上探讨了1,3-双(1-苯基-1H-四唑-5-巯基)-乙酰苯腙(DAPHZ)钳形受体对卤素阴离子的识别机理,结果发现DAPHZ受体以其钳形结构中的-N-H基团与卤素阴离子间形成双侧红移氢键进行识别. 经BSSE校正后DAPHZ•••F-, DAPHZ•••Cl-和DAPHZ•••Br-体系的分子识别相互作用能ΔECP分别为-327.5,-163.5和-148.3 kJmol-1, 说明钳形DAPHZ受体对F-具有最好的识别能力. 此外, 采用自然键轨道(NBO)计算, 相关H原子化学位移计算及分子中原子(AIM)等理论分析了识别体系中红移氢键的电子结构和性质, 结果表明APHZ受体对卤素阴离子的识别能力的相对顺序为DAPHZ•••F- >> DAPHZ•••Cl- ≈ DAPHZ•••Br-.  相似文献   

2.
采用密度泛函B3LYP(Becke,three-parameter,Lee-Yang-Parr)量子化学理论方法探讨了同时基于氢键和卤键者两种弱相互作用的尿素无氟含碘衍生物对卤素阴离子(F-,Cl-,Br-和I-)的识别机理,结果发现尿素衍生物受体分子A以其结构中的两个N-H键和两个C-I与卤素阴离子间形成四齿弱键进行识别.其中包括2个N-H…X-红移氢键和2个C-I…X-蓝移卤键弱相互作用.另外,经BSSE校正后的A…F-,A…Cl-,A…Br-和A…I-分子识别体系中相互作用能ΔECP分别为-48.90,-121.78,-311.42和-96.55kJ/mol,从结合强度上来看,受体A对Br-和Cl-具有较好的识别能力,而对F-的识别能力相对较弱.此外,采用自然键轨道(NBO)理论分析了C…X-(X=F-,Cl-,Br-和I-)识别体系中红移氢键和蓝移卤键的电子行为与性质.  相似文献   

3.
采用密度泛函B3LYP(Becke, three-parameter, Lee-Yang-Parr)量子化学理论方法探讨了同时基于氢键和卤键者两种弱相互作用的尿素无氟含碘衍生物对卤素阴离子(F-,Cl-,Br-和I-)的识别机理, 结果发现尿素衍生物受体分子A以其结构中的两个N-H键和两个C-I与卤素阴离子间形成四齿弱键进行识别. 其中包括2个N-H…X-红移氢键和2个C-I…X-蓝移卤键弱相互作用. 另外, 经BSSE校正后的A…F-, A…Cl-, A…Br-和A…I-分子识别体系中相互作用能ΔECP分别为-48.90, -121.78, -311.42和-96.55 kJ/mol, 从结合强度上来看, 受体A对Br-和Cl-具有较好的识别能力, 而对F-的识别能力相对较弱. 此外, 采用自然键轨道(NBO)理论分析了C…X-(X= F-,Cl-,Br-和I-)识别体系中红移氢键和蓝移卤键的电子行为与性质.  相似文献   

4.
采用密度泛函B3LYP(Bccke.thrcc-paramctcr,Lee-Yang-Parr)方法探讨了间-苯二氧乙酰-(N-苯甲酰基)肼(DAPHZ)受体对卤素阴离子的识别机理,结果发现DAPHZ钳形受体C构型以其钳形结构中的N-H键与卤素阴离子间形成多齿红移氢键进行识别,其中C…X-(X=F-,Cl-和Br-)体系中主客体间以双齿氢键识别结合,而在C…I-体系中主客体间以三齿氢键识别结合,说明钳形受体C对I-在空间几何上具有最好的匹配性.经BSSE校正后的C…F-,C…Cl-,C…Br-和C…I-体系分子识别相互作用能△ECP分别为-314.0,-200.1,-183.3和-136.3 kJmol-1,说明钳形受体C对F-在热力学上具有最好的识别能力.此外,采用自然键轨道(NBO))分析及分子中原子(AIM)等理论分析了C…X-(X=F-,Cl-,Br-和I-)识别体系中红移氢键的电子结构和性质.  相似文献   

5.
利用紫外-可见吸收光谱及1H NMR考察了两种N-芳基-N′-(4-乙氧基苯甲酰基)硫脲作为受体分子与F-,Cl-,Br-,I-,CH3COO-,H2PO-4,HSO-4,NO-3等阴离子的作用。结果表明,客体阴离子F-,CH3COO-,H2PO-4可以与该类受体分子形成氢键配合物,溶液颜色由无色转变为黄色,而加入其他阴离子则无变化。测定了主客体配合物的稳定常数和化学配位比,对苯环上不同取代基的受体分子与不同阴离子客体的识别作用以及同一受体对不同阴离子的识别作用进行了比较,其识别性能呈现规律性变化, 提出了可能的配合物的结合模式。  相似文献   

6.
采用密度泛函B3LYP(Becke, three-parameter, Lee-Yang-Parr)/6-311G**理论水平研究了Cu+和Cu2+离子与N-[2-羟基-1(S)-甲基]-N-甲基甘氨酸根负离子配体(PT)形成的配合物的结构,重点讨论了配合物中的C-H Cu抓氢键结构. 计算表明, 当单个配体与Cu+结合时,配合物PT•••Cu(Ⅰ)结构中有C-H Cu抓氢键形成,C-H键伸缩振动频率显著红移,键长显著增大而被活化, 配体为三齿配体;当两个配体与Cu2+结合时,配合物PT•••Cu(Ⅱ)不存在C-H Cu抓氢键结构,配体为双齿配体. NBO及AIM理论分析均表明C-H Cu抓氢键属于一种较强的基团间相互作用,在强度和电子行为上与氢键弱相互作用有本质不同.  相似文献   

7.
使用MP2方法研究了N-H•••O=C氢键二聚体的氢键强度,探讨了不同取代基对N-H•••O=C氢键强度的影响.研究发现,可以通过改变质子供体或受体分子上取代基的供电性或吸电性来调控氢键强度:乙基等供电子基团对N-H•••O=C氢键强度的调节作用不大;NO2和CN等强吸电子基团可极大地改变N-H•••O=C氢键强度;质子供体分子中的强吸电子基团如CN可使N-H•••O=C氢键强度增强多达4.6kcal/mol,质子受体分子中的强吸电子基团如NO2可使N-H•••O=C氢键强度减弱多达2.6kcal/mol.自然键轨道(NBO)分析表明,N-H•••O=C氢键强度越强,参与形成氢键的氢原子电荷越正,氧原子电荷越负,单体分子间电荷转移越多,N-H•••O=C氢键中氧原子孤对电子n(O)对N-H反键轨道σ*(N-H)的二阶稳定化能越大.  相似文献   

8.
以酚羟基为识别位点,蒽醌基和偶氮基为信号报告基团,设计合成了识别阴离子的主体分子2-[(4-羟基苯基)偶氮]蒽醌.紫外-可见吸收光谱结果表明,在DMSO介质中,主体分子可以“裸眼”识别F-和Ac-,吸收光谱发生显著变化,溶液颜色由黄色变为蓝绿色,其它阴离子不影响其对F-和Ac-的识别.初步探讨了识别机理,表明主体分子与阴离子之间形成氢键促进了分子内电荷转移,使吸收光谱发生显著红移,溶剂对主体分子与阴离子之间的反应存在影响.  相似文献   

9.
设计合成了3种N-邻羟基萘甲酰胺基-N′-苯基硫脲类化合物,通过核磁共振谱和质谱表征了其结构。应用吸收光谱和荧光光谱考察了在乙腈中其与F-、CH3CO2-、H2PO4-、HSO4-、Cl-和Br-等阴离子的相互作用。结果表明,该类主体分子与阴离子形成结合比为1∶1氢键配合物,通过改变萘环上酰基和羟基的相邻位置可调控识别作用的选择性,它们与阴离子作用分别在355、367nm和372nm出现最大吸收峰,荧光光谱显示它们对F-有突出的响应灵敏度,可选择性识别F-。  相似文献   

10.
采用全原子分子动力学模拟研究了丙氨酸二肽分子在水溶液中的结构和氢键作用。径向分布函数和氢键统计用于分子动力学模拟的分析。从径向分布函数(RDF)发现不同类型的强氢键显示出不同的形成能力,而体系中的C−H•••O弱相互作用较为明显,也不能忽略。氢键统计分析的结果也证实了这一点。分子内距离、回转半径和骨架二面角用于表征丙氨酸二肽分子在水溶液中的构象变化。丙氨酸二肽分子在水溶液中的柔顺性较好,构象在折叠和伸展之间相互转换。  相似文献   

11.
We give an explicit construction of the 1-cocycles of the group of contactomorphisms on the supercircle S1|m for m=1,2, with coefficients in the space of differential operators acting on S1|m-tensor densities. We show that they satisfy properties similar to those of the super-Schwarzian derivative.  相似文献   

12.
LEED analysis of the laser annealed Si(1 1 1)-(1 × 1) surface shows that a model with a graphite-like top double layer of atoms with a spacing of 2.95±0.02 Å from the second double layer describes the LEED data as well as the Zehner model, but involves large displacements of the atoms normal to the surface as required by ion scattering results. It is suggested that this model provides a natural interpretation of the low energy He atom scattering data for the Si(1 1 1)-(7 × 7) surface.  相似文献   

13.
The stability of hydrogen complexes aligned in a (1 1 1) plane of silicon is studied theoretically. Pairs of hydrogen atoms saturating broken bonds between adjacent planes are found to be the most stable arrangement with the heat of formation increasing as the platelet grows. The related stress is estimated and electronic effects are discussed.  相似文献   

14.
The method of “averaging” is often used in Hamiltonian systems of two degrees of freedom to find periodic orbits. Such periodic orbits can be reconstructed from the critical points of an associated “reduced” Hamiltonian on a “reduced space”. This paper details the construction of the reduced space and the reduced Hamiltonian for the semisimple 1:1 resonance case. The reduced space will be a 2-sphere in R3, and the reduced differential equations will be Euler's equations restricted to this sphere. The orbit projection from the energy surface in phase space to this sphere will be the Hopf map. The results of the paper are related to problems in physics on “degeneracies” due to symmetries of classical two-dimensional harmonic oscillators and their quantum analogues for the hydrogen atom.  相似文献   

15.
We present measurements of infrared inter-subband absorption for electron subbands on (1 1 1)-Si for densities Ns up to ~ 1013 cm?2 at 4.2 K for both parallel- and perpendicular-excitation geometries. Contrary to previously published work the depolarization shift is identified as a sizeable splitting of the resonance energies E01 and Ez.dfnc;01. The comparison with a recent calculations is given.  相似文献   

16.
Diffusion of dysprosium on the (1 1 1) facet of a tungsten micromonocrystal was investigated by means of spectral analysis of field emission current fluctuations. The experimental spectral density functions of the current fluctuations were analysed by using Gesley and Swanson’s theoretical spectral density function, which enables to determine the surface diffusion coefficient D for dysprosium. Derived from the temperature dependence of D, the diffusion activation energy E is presented for some Dy coverages θ(1 1 1). In the temperature range 400–600 K, the E first drops from 1.25 eV per atom at θ(111)≈0.25 ML to 0.48 eV per atom at θ(111)≈1 ML (corresponding to the minimum of the work function of the system), then increases to 1.03 eV per atom at θ(111)≈1.3 ML. The results are discussed from the aspects of the substrate structure and interaction in the adsorbed layer.  相似文献   

17.
We present the first direct observation of an occupied noble metal surface state at the metal/liquid interface. The Au(1 1 1) Shockley-like surface state was measured by scanning tunneling spectroscopy (STS) at the Au(1 1 1)/n-tetradecane interface. These results show that the surface state of gold survives in a liquid environment, and can be probed by STS. More generally it indicates that STS can be used to study electronic properties of surfaces at the solid/liquid interface, and that spectra can be directly compared to measurements and calculations of a surface’s electronic structure in ultra-high vacuum.  相似文献   

18.
Ag(1 1 1) monolayers prepared on two substrates, Ni(1 1 1) and Ni(0 0 1), were studied with angle-resolved photoemission; their two-dimensional band dispersions were found to be identical within experimental uncertainties. Comparing the present results with those for Ag/Cu(0 0 1), the major difference is just a shift of 0.32 eV in all the binding energies. Thus the band topology of Ag overlayers in these systems is quite insensitive to the electronic and atomic structures of the substrates.  相似文献   

19.
We report our observations of the features in the conductivity and the anomalous magnetoresistance of a two-dimensional hole gas near (1 1 1) silicon surface, which gives the evidence for the onset of the second subband occupation at hole density ps ≈ 5.3 × 1012 cm-2.  相似文献   

20.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号