Fabrication and electrical properties of a carbon nanotube quantum dot |
| |
| Authors: | Fang Jing-Hai Liu Li-Wei Kong Wen-Jie Cai Jian-Zhen Lü Li |
| |
| Affiliation: | Beijing National Laboratory for Condensed Matter Physics, and the Institute of Physics,Chinese Academy of Sciences, Beijing 100080,China |
| |
| Abstract: | Single-walled carbon nanotubes (SWNTs) were synthesized by pyrolyzing
methane (CH4) at a temperature of 900℃ on SiO2 substrates
pre-coated with iron nano-particles. Electrical contacts were fabricated
onto one of the SWNTs by using an electron beam lithography process. Coulomb
blockade and single-electron tunnelling characters were found at low
temperatures, indicating that the SWNT in-between the electrodes forms a
quantum dot. It is found that the Coulomb gap of the quantum dot is about
8.57 meV, and the factor \alpha , which converts the gate voltage to the
true electrostatic potential shift, is around 200 for this device. |
| |
| Keywords: | quantum dot carbon nanotube |
|
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
|
点击此处可从《中国物理 B》下载免费的PDF全文 |
|
