Influence of defects on the optical and structural properties of Ge dots embedded in an Si/Ge superlattice

In this work we studied the influence of high-energy proton irradiation on the optical and structural properties of an Si/Ge superlattice (SL) with embedded Ge quantum dots (QDs). The presence of QDs in the as-grown samples was established by transmission electron microscopy and photoluminescence (PL). The samples were irradiated with 2.0 MeV protons to fluences in the range 2×10¹²-2×10¹⁴ cm^-2. The structural characterization made by X-ray reciprocal space mapping, X-ray reflection and Rutherford backscattering/channelling has shown no changes in the as-grown heterostructure due to the irradiation. In spite of the expected high concentration of nonradiative recombination centres caused by the proton-induced damage, the PL emission from the Ge dots has been observed even for the highest irradiation fluence. The studied QD-in-SL structure has shown an extraordinarily high radiation hardness when compared with previously studied QD heterostructures.     

The effects of xenon ion irradiation on the photoluminesce behavior of poly(p-cresolformaldeyde)/diazonaphtoquinone thin films

In the present paper, we investigate the origin of photoluminescence (PL) and the changes in the optical properties: refractive index and absorption coefficient, in poly(p-cresolformaldeyde) and diazonaphtoquinone thin films irradiated with Xe ions. Films 400 nm thick have been irradiated with 800 keV Xe²⁺ ions in a fluence range from 10¹³ to 6 × 10¹⁵ Xe cm⁻². The structural modifications were followed by the techniques of nuclear reaction analysis, elastic recoil detection analysis, Rutherford backscattering, Fourier transform infrared and Raman spectroscopies. The PL behavior was characterised with 488 nm excitation wavelength. The pristine films show emission with maxima of the main bands located at 635, 720 and 830 nm. For fluences up to 10¹⁴ Xe cm⁻², the photoluminescence intensity increases with the irradiation fluence. The chain mobility lowering, characterized by the crosslinked structure, explains this behavior in organic systems. Other possible contribution for increasing of PL intensity, at these fluences, is the presence of oxygen trapped in the polymer chains by the dangling bonds. At intermediate and higher fluences, the photoluminescence starts to decrease. At fluences higher than 10¹⁴ Xe cm⁻², irreversible changes of the organic structure occur and they are characterized by large losses of oxygen and hydrogen, transforming the material into amorphous carbon films. The loss of photoluminescent behavior is associated with the light absorption characteristics of the amorphous carbon structure. This conclusion is supported by the observed increase of the refractive indexes and absorption coefficients, obtained in the infrared region, as well as by the Raman results. Also, the effect of irradiation modifying the refractive index in the infrared region suggests the application of these films as waveguide in this region of wavelength.     

Luminescence study of SHI irradiated nano semiconductor: Conducting polymer composite

Semiconductor nanoparticle and conducting polymer composite is an interesting class of materials for optoelectronic and photovoltaic device application. We have synthesized a composite of nanocrystalline PbS and conducting polymer MEH-PPV by chemical synthesis and studied the effect of swift heavy ion (SHI) irradiation on the composite material. The irradiation of the composite materials in thin film form is carried out with 120 MeV Si⁺⁹ ion beam at fluences from 5×10¹⁰ to 10¹³ ions/cm². Fluence dependent optical and structural properties have been observed in optical absorption, PL and TEM studies. Reduction of nanoparticle size has been observed after irradiation.     

Swift heavy ion induced structural modification and photo-luminescence in CaS:Bi nanophosphors

CaS:Bi nanocrystalline powder of average grain size 35 nm was prepared by wet chemical co-precipitation method and irradiated with 100 MeV oxygen ions at fluences between 1×10¹² and 1×10¹³ ion/cm². The irradiation induced damage and modifications were studied using X-ray Diffraction (XRD), transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. With the increase in ion fluences, the crystallinity of CaS was destroyed upto 25.9 % for the reflection (200) and 21.1 % for the reflection (220) and the peaks broadens at a much faster rate due to grain breaking process. Structural parameters such as grain size, strain and dislocation density have shown a significant change after ion irradiation. The effects of different dopant concentrations on PL emission intensity after irradiation were also investigated. A blue shift of the photoluminescence peak with increasing ion fluence was noticed and was also ascribed to a decrease in the CaS grain size.      

Argon ions induced thermoluminescence properties of Ba0.12Sr0.88SO4 phosphor

Thermoluminescence properties of barium strontium mixed sulfate have been studied by irradiation with Argon ions. The sample was recrystallized by chemical co-precipitation techniques using H₂SO₄. The X-ray diffraction study of prepared sample suggests the orthorhombic structure with average grain size of 60 nm. The samples were irradiated with 1.2 MeV Argon ions at fluences varying between 10¹¹ and 10¹⁵ ions/cm². The argon ions penetrate to the depth of 1.89 μm and lose their energy mainly via electronic stopping. Due to ion irradiation, a large number of defects in the sample are formed. Thermally stimulated luminescence (TSL) glow curves of ion irradiated Ba_0.12Sr_0.88SO₄ phosphor exhibit broad peak with maximum intensity at 495 K composed of four overlapping peaks. This indicates that different sets of traps are being activated within the particular temperature range each with its own value of activation energy (E) and frequency factor (s). Thermoluminescence (TL) glow curves were recorded for each of the ion fluences. A linear increase in intensity of TL glow peaks was found with the increase in ion dose from 59 kGy to 5.9 MGy. The kinetic parameters associated with the prominent glow peaks were calculated using glow curve deconvolution (GCD), different glow curve shape and sample heating rate methods.     

Ionoluminescence and photoluminescence studies of Ag ion irradiated kyanite

Ionoluminescence (IL) of kyanite single crystals bombarded with 100 MeV swift Ag⁸⁺ ions with fluences in the range 1.87-7.5×10¹¹ ions/cm² has been studied. A pair of sharp IL peaks at ∼689 and 706 nm along with broad emission in the region 710-800 nm are recorded in both crystalline and pelletized samples. Similar results are recorded in Photoluminescence (PL) of pelletized kyanite bombarded with same ions and energy with fluences in the range 1×10¹¹-5×10¹³ ions/cm² with an excitation of 442 nm laser beam. The characteristic pair of sharp emission peaks at 689 and 706 nm in both IL and PL is attributed to luminescence centers activated by Fe²⁺ and Fe³⁺ ions. The reduction in IL and PL bands intensity with increase of ion fluence might be attributed to degradation of Si-O (2ν₃) bonds, present on the surface of the sample.     

Photoluminescence spectra of thin films containing CdSe/ZnS quantum dots irradiated by 532-nm laser radiation and gamma-rays

We have investigated temporal behavior of the photoluminescence (PL) spectra of thin films containing CdSe/ZnS quantum dots irradiated by 532 nm laser radiation and gamma-rays. Under ∼100 W/cm² laser radiation, the PL intensity (I_PL) increases with irradiation time upto about 500 s and thereafter declines linearly. The wavelength of the PL emission (λ_peak) exhibits a blue-shift with exposure time. Upon simultaneous irradiation by 100 W/cm² 532-nm laser, as well as 0.57 and 1.06 MeV gamma-rays, the temporal behaviors of both I_PL and λ_peak are significantly different; I_PL increases to a saturation level, and the magnitude of the blue-shift in λ_peak is reduced. We discuss possible mechanisms underlying these results.     

Effect of 100 MeV Ni ion irradiation on MOCVD grown n-GaN

Metal-organic chemical vapor deposition (MOCVD) grown n-type Gallium nitride (GaN) has been irradiated with 100 MeV Ni⁹⁺ ions at room temperature. Atomic force microscopy (AFM) images show the nano-clusters' formation upon irradiation and the irradiated GaN surface roughness increases with the increasing ion fluences. High-resolution X-ray diffraction (HR-XRD) analysis reveals the formation of Ga₂O₃ due to the interface mixing of GaN/Al₂O₃ upon irradiation. FWHM values of GaN (0 0 0 2) increases due to the lattice disorder. Photoluminescence studies show reduced band edge emission and yellow luminescence (YL) intensity with the increasing ion fluences. Change in the band gap energy between 3.38 and 3.04 eV was measured by UV-visible optical absorption spectrum on increasing the ion fluences.     

125 MeV Si ion irradiation of calcium phosphate thin film coated by rf-magnetron sputtering technique

Titanium substrate was coated with hydroxyapatite by radiofrequency magnetron sputtering (rf-magnetron sputtering) technique and subjected to swift heavy ion (SHI) irradiation of 125 MeV with Si⁹⁺ at fluences of 1 × 10¹⁰, 1 × 10¹¹ and 1 × 10¹² ions/cm². The glancing incidence X-ray diffraction (GIXRD) analysis confirmed the HAp phase of the irradiated film. There was a considerable decrease in crystallinity and particle size after irradiation. In addition, DRS-UV reflectance spectra revealed a decrease in optical band gap (E_g) from 5.2 to 4.6 eV. Wettability of biocompatible materials plays an important role in biological cells proliferation for tissue engineering, drug delivery, gene transfer and bone growth. HAp thin films irradiated with 1 × 10¹¹ ions/cm² fluence showed significant increase in wettability. While the SHI irradiated samples exhibited enhanced bioactivity, there was no significant variation in cell viability. Surface roughness, pores and average particle size were analyzed by atomic force microscopy (AFM).     

Excitation of thermoluminescence in Eu doped Ba0.12Sr0.88SO4 nanophosphor by low energy argon ions

In the present paper thermoluminescence properties of argon ions irradiated barium strontium mixed sulphate phosphor are reported. The Ba_0.12Sr_0.88SO₄ phosphor was prepared by chemical co-precipitation method. The X-ray diffraction study of prepared sample suggests orthorhombic structure with average grain size of 37 nm. The samples were irradiated with 1.2 MeV Argon ions at fluences varying between 10¹¹-10¹⁵ ions/cm². The argon ions penetrate to the depth of 1.89 μm and lose their energy mainly via electronic stopping. Due to ion irradiation, a large number of defects in the sample are formed. Thermoluminescence (TL) glow curves were recorded for each of the ion fluence. These curves exhibit one broad peak with maximum intensity at 498 K composed of three overlapping peaks. This indicates that different sets of traps are being activated within the particular temperature range each with its own value of activation energy (E) and frequency factor (s). The peaks were observed due to formation of trap levels by ion irradiation and subsequently activation of traps on thermal stimulation. The TL response of the nanophosphor is linear in the dose range 59 kGy-590 MGy. Kinetic parameters associated with the prominent peaks were calculated using glow curve deconvolution (GCD) and verified by different glow curve shape and sample heating rate methods.     

Evolution of surface morphology of NiO thin films under swift heavy ion irradiation

NiO nanoparticle thin films grown on Si substrates were irradiated by 107 MeV Ag⁸⁺ ions. The films were characterized by glancing angle X-ray diffraction and atomic force microscopy. Ag ion irradiation was found to influence the shape and size of the nanoparticles. The pristine NiO film consisted of uniform size (∼100 nm along major axis and ∼55 nm along minor axis) elliptical particles, which changed to also of uniform size (∼63 nm) circular shape particles on irradiation at a fluence of 3 × 10¹³ ions cm⁻². Comparison of XRD line width analysis and AFM data revealed that the particles in the pristine films are single crystalline, which turn to polycrystalline on irradiation with 107 MeV Ag ions.     

Ion beam modification of porous silicon using high energy Au ions and its impact on photoluminescence spectra

This paper presents investigation of impact of high-energy ion-irradiation on properties of light emitting porous silicon (PS) through photoluminescence (PL) spectroscopy. Irradiation was performed with 100 MeV Au⁺⁷ ions from a pelletron accelerator at ion doses in 10¹⁰-10¹⁴ cm⁻² range. The effect was associated with a blueshift (∼40 nm) and an enhancement of the PL intensity, in general. The efficiency and stability of PL with respect to ambients was seen to be relatively improved. The PL properties of PS were found to be stable against low to medium dose irradiation (<10¹³ cm⁻²), whereas, higher dose led to further degradation of the optical properties. The effects have been explained in terms of a decrease in the non-radiative recombination probability of electron-hole pairs due to chemical restructuring of the surface and a reduced crystallite size as a result of irradiation.     

Luminescence studies on swift heavy ion irradiated nanocrystalline aluminum oxide

Pellets of nanocrystalline aluminum oxide synthesized by a combustion technique are irradiated with 120 MeV Au⁹⁺ ions for fluence in the range 5×10¹¹-1×10¹³ ions cm⁻². Two photoluminescence (PL) emissions, a prominent one with peak at ∼525 nm and a shoulder at ∼465 nm are observed in heat treated and Au⁹⁺ ion irradiated aluminum oxide. The 525 nm emission is attributed to F₂²⁺-centers. The PL intensity at 525 nm is found to increase with increase in ion fluence up to 1×10¹² ions cm⁻² and decreases beyond this fluence. Thermoluminescence (TL) of heat-treated and swift heavy ion (SHI) irradiated aluminum oxide gives a strong and broad TL glow with peak at ∼610 K along with a weak shoulder at 500 K. The TL intensity is found to increase with Au⁹⁺ ion fluence up to 1×10¹³ ions cm⁻² and decreases beyond this fluence.     

Synthesis and nonlinear optical characterization of SnO2 quantum dots

The present paper demonstrates the preparation and characterization of SnO₂ semiconductor quantum dots. Extremely small ∼1.1 and ∼1.4 nm SnO₂ samples were prepared by microwave assisted technique with a frequency of 2450 MHz. Based on XRD analysis, the phase, crystal structure and purity of the SnO₂ samples are determined. UV-vis measurements showed that, for the both size of SnO₂ samples, excitonic peaks are obtained at ∼238 and ∼245 nm corresponding to ∼1.1 nm (sample 1) and ∼1.4 nm (sample 2) sizes, respectively. STM analysis showed that, the quantum dots are spherical shaped and highly monodispersed. At first, the linear absorption coefficients for two different sizes of SnO₂ quantum dots were measured by employing a CW He-Ne laser at 632.8 nm and were obtained about 1.385 and 4.175 cm⁻¹, respectively. Furthermore, the nonlinear refractive index, n₂, and nonlinear absorption coefficient, β, were measured using close and open aperture Z-scan respectively using the same laser. As quantum dots have strong absorption coefficient to obtain purely effective n₂, we divided the closed aperture transmittance by the corresponding open aperture in the same incident beam intensity. The nonlinear refraction indices of these quantum dots were measured in order of 10⁻⁷ (cm²/W) with negative sign and the nonlinear absorption coefficients were obtained for both in order of 10⁻³ (cm/W) with positive sign.     

InSb quantum dots and quantum rings on InAs-rich surface

We report a study of InSb nanoobjects (quantum dots and quantum rings) grown on InAs-rich surface by liquid phase epitaxy. Characterization of the sample surface was performed using atomic force microscopy (AFM). The bimodal formation of the uncapped InSb quantum dots (QDs) was observed for the growing on a binary InAs substrate. Uniform high-density (1 × 10¹⁰ cm⁻²) quantum dots with a height of 3 nm were obtained at T = 420-430 °C, whereas low-density (5 × 10⁸ cm⁻²) big quantum dots were 9 nm in height. As a buffer layer, lattice-matched InAsSb_0.12P_0.25 solid solution was deposed on InAs substrate using metal-organic vapour phase epitaxy. Deposition from the InSb melt on the buffer layer resulted in the formation of InSb nanoobjects with density as high as 3 × 10¹⁰ cm⁻².     

SHI induced silicide formation and surface morphology at Co/Si system

Ion beam mixing is a useful technique to produce modifications at the surface and interface of the solid material. In the present work, ion beam induced modifications at Co/Si interface using 120 MeV Au-ion irradiation has been studied at ion fluences in the range of 10¹² to 10¹⁴ ions/cm² by secondary ion mass spectroscopy (SIMS) technique and calculated mixing efficiency at the interface. Silicide formation has been discussed on the basis of swift heavy ion (SHI) irradiation induced effects. Surface morphology and roughness of irradiated system with fluence 5 × 10¹³ and 1 × 10¹⁴ ions/cm² is studied by scanning tunneling microscopy (STM). Roughness of the surface shows marks of melting process and confirms the appearance of some pinholes in the reacted Co/Si system. Comparative study was also undertaken on annealed sample at 300 °C and then irradiated at a dose 1 × 10¹⁴ ions/cm².     

Structural phase diagram for ZnS nanocrystalline thin films under swift heavy ion irradiation

The synthesis of nanocrystalline ZnS thin films by pulsed laser deposition and their modification by swift heavy ions are presented. The irradiations with 150 MeV Ni ions at fluences of 1×10¹¹, 1×10¹² and 1×10¹³ ions/cm² have been used for these studies. Irradiation results in structural phase transformation and bandgap modification of these films are investigated by using X-ray diffraction and UV-visible absorption measurements, respectively. Since stoichiometry changes induced by irradiation can contribute to the modification of these properties, elastic recoil detection analysis has been performed on pristine and 150 MeV Ni ions irradiated ZnS thin films using a 120 MeV Ag ion beam. The stoichiometry of the films has been found to be similar for pristine and ion irradiated samples. A structural phase diagram based on thermal and pressure spikes has been constructed to explain the structural phase transformation.     

Photoluminescence and optical properties of He ion bombarded ultra-high molecular weight polyethylene

Ion bombardment is a suitable tool to improve the physical and chemical properties of polymer surface. In this study UHMWPE samples were bombarded with 130 keV He ions to the fluences ranging from 1 × 10¹² to 1 × 10¹⁶ cm⁻². The untreated and ion beam modified samples were investigated by photoluminescence, and ultraviolet-visible (UV-vis) spectroscopy. Remarkable decrease in integrated luminescence intensity with increasing ion fluences was observed. The reduction in PL intensity with increase of ion fluence might be attributed to degradation of polymer surface and formation of defects. The effect of ion fluence on the optical properties of the bombarded surfaces was characterized. The values of the optical band gap E_g, and activation energy E_a were determined from the optical absorption. The width of the tail of the localized states in the band gap (E_a) was evaluated using the Urbach edge method. With increasing ion fluences a decrease in both the energy gap and the activation energy were observed. Increase in the numbers of carbon atoms (N) in a formed cluster with increasing the He ion fluence was observed.     

Temperature induced size selective synthesis of hybrid Cds/pepsin nanocrystals and their photoluminescence investigation

There is growing interest in materials chemistry for taking advantage of the physical and chemical properties of biomolecules in the development of next generation nanoscale materials for opto-electronic applications. A biomimetic approach to materials synthesis offers the possibility of controlling size, shape, crystal structure, orientation, and organization. The great progress has been made in the control that can be exerted over optical materials synthesis using biomolecules (protein, nucleic acid)/mineral interfaces as templates for directed synthesis. We have synthesized the CdS nanocrystals using pepsin by biomimetic technique at four different set temperatures. X-ray diffraction (XRD) and small angle X-ray scattering (SAXS) results showed that we are able to tune the size and distribution profile just by tuning the reaction (Rx) temperature and goes towards excitonic Bhor radius (2.5 nm) at low temperature (4 °C). The narrow absorption peak at 260 nm from Cd²⁺-pepsin complex dominates and indicates the size dispersion of the modified CdS nanoparticles are fairly monodisperse. Effective mass approximation (EMA) shows large blue-shift (~1 eV) in the band gap for the cubic phase from bulk hexagonal CdS. The photoluminescence (PL) and photoluminescence excitation (PLE) spectra are dominated by a strong and narrow band-edge emission tunable in the blue region indicating a narrow size distribution. The reduction in PL efficiency is observed when the Rx temperature increases however no change in PLE spectra and temporal profiles of the band-edge PL is observed. At 4 °C, high emission efficiency with shift of PL spectrum in the violet region is observed for 1.7 nm size CdS quantum dots (QDs). Presence of pepsin has slowed the PL decay which is of the order of 100 μs.     

Ion irradiation induced Al-Ti interaction in nano-scaled Al/Ti multilayers

Interactions induced in Al/Ti multilayers by implantation of Ar ions at room temperature were investgated. Initial structures consisted of (Al/Ti) × 5 multilayers deposited by d.c. ion sputtering on Si(1 0 0) wafers, to a total thickness of ∼250 nm. They were irradiated with 200 keV Ar⁺ ions, to the fluences from 5 × 10¹⁵ to 4 × 10¹⁶ ions/cm². It was found that ion irradiation induced a progressed intermixing of the multilayer constituents and Al-Ti nanoalloying for the highest applied fluence. The resulting nanocrystalline structure had a graded composition with non-reacted or interdiffused Al and Ti, and γ-AlTi and AlTi₃ intermetallic phases. Most intense reactivity was observed around mid depth of the multilayers, where most energy was deposited by the impact ions. It is presumed that Al-Ti chemical reaction is triggered by thermal spikes and further enhanced by chemical driving forces. The applied processing can be interesting for fabrication of tightly bond multilayered structures with gradual changes of their composition and properties.