微纳尺度俄歇电子能谱新技术开发及其应用进展

随着纳米结构材料的广泛应用,新型微纳尺度表征技术成为纳米科学技术发展的重要途径。本文基于局域电子信息全面性的思想,从俄歇电子能谱的原理出发,理论推导出俄歇价电子能谱的简明表述方式,确定俄歇价电子能谱与微观电子结构信息的内在联系和物理意义,建立了俄歇电子能谱探测微区一系列宏观参量的新技术。其中应力测量技术的空间分辨率可优于20nm,为微纳尺度力学测量的发展提供了重要的方法;非接触性的局域电学性质测量技术,超越了传统电学测量方法的思想框架,实现了无外场驱动的电荷密度分布、电场分布等本征电学性质表征、以及半导体异质结构整个空间区域的能带构造;结构相的测定技术,使纳米微区材料的晶体结构相识别成为可能;半导体微区导电类型测定技术,延续了非接触性电学测量的优点,并且能够灵活地探测分析复杂光电器件结构中不同区域的导电类型分布。通过实际应用于侧向外延GaN不同区域、AlxGa1-xN/GaN超晶格量子阱结构、ZnO纳米颗粒等纳米尺度复杂体系的微区宏观性质探测,获得应力/应变、电荷密度/电场、结构相以及导电类型及其分布等结果,验证了所建立的测量技术的有效性和可靠性。     

分子束外延GaN薄膜的X射线光电子能谱和俄歇电子能谱研究

用XPS和AES电子能谱的方法对等离子体辅助分子束外延(MBE)生长的GaN薄膜进行了表面分析和深度剖析.发现红外分子束外延(RFMBE)生长的富镓GaN薄膜实际表面存在O和C吸附层,C主要为物理吸附,而O在GaN表面形成局域化学键产生氧络合物覆盖层,并形成一定的深度分布.杂质O在GaN带隙中导带底形成杂质带同时引入深受主能级,使得带隙变窄室温光吸收谱向低能方向移动,光致发光谱出现宽带发光峰.从而影响GaN薄膜的电学和光学性质 关键词： GaN薄膜 X射线光电子能谱 俄歇电子能谱 表面分析     

MBE生长氮化镓薄膜的X光电子谱和俄歇电子谱分析

用X光电子谱和俄歇电子能谱的方法对射频等离子体辅助分子束外延(MBE)技术生长的氮化镓(GaN)薄膜进行了表面分析和深度剖析.发现薄膜实际表面存在O和C吸附层,C主要为表面污染,而O形成一定的深度分布,从而影响氮化镓薄膜的电学和光学性质.     

白碳纳米晶薄膜及其场致电子发射特性

利用微波等离子体化学气相沉积方法,以甲烷、氢混合气体为反应气体,具有钛镀层的玻璃作为衬底,制备了具有sp¹杂化结构的白碳纳米晶薄膜。利用X射线衍射、俄歇电子能谱,以及扫描电子显微镜对薄膜结构进行了表征。以白碳纳米晶薄膜为阴极,以镀有ITO透明导电薄膜玻璃为阳极,采用二极管结构,测试了白碳纳米晶薄膜的场致电子发射特性。开启电场为2.5 V/μm,在电场为5 V/μm时的电流密度为200μA/cm²。对白碳纳米晶薄膜生长机理,以及其场致电子发射机制进行了讨论。     

SiNx插入层的生长位置对GaN外延薄膜性质的影响

系统研究了纳米量级的多孔 SiNx插入层生长位置对高质量GaN外延薄膜性质的影响.高分辨X射线衍射测量结果表明:SiNx插入层生长在CaN粗糙层上能够得到最好的晶体质量.利用测量结果分别计算出了螺位错和刃位错的密度.此外,GaN薄膜的光学、电学性质分别用Raman散射能谱、低温光致发光能谱和霍尔测量的方法进行了表征.实...     

GexSi1-x/Si超晶格的俄歇深度剖面分析

用氩离子刻蚀和俄歇电子能谱测量Ge_xSi_1-x/Si应变层超晶格的成分深度分布,得到Ge,Si两种成分随深度的周期性变化,在二次电子象中观察到刻蚀坑边缘的明暗交替的周期性结构。讨论了用俄歇深度剖面分布作超晶格结构分析的特点及其局限性。 关键词：     

金纳米环结构的光学性质研究

采用离散偶极子近似方法(DDA)研究了两种不同形状的金纳米环结构的消光光谱及其近电场分布, 研究了等离子体消光峰的红移、蓝移现象及消光系数与结构参数之间的关系, 并与盘状的金纳米结构进行了比较. 在等离子体共振峰波长入射时, 金纳米环结构比金纳米盘结构产生更大的局域增强电场分布, 横截面为圆形的金纳米环结构比横截面为矩形的结构具有更大的局域增强电场分布, 更适合作为表面增强拉曼散射的衬底. 关键词： 离散偶极子近似 金纳米环 金纳米盘 光学性质     

新型扫描微波显微术

微波是整个电磁频谱非常重要的组成部分,可以与物质发生丰富的相互作用;而原子力 显微术(Atomic Force Microscopy,AFM) 有超高的空间分辨率,是纳米研究的核心工具。将 微波技术与AFM 结合将实现一种全新的扫描微波显微术(Scanning Microwave Microscopy, SMM)。该技术可以探测各种样品（包括导体、半导体、绝缘体及其它新型材料）在微纳米尺度 的多种电学性质,如载流子类型、介电常数、电导率和导磁系数等;以及实现微纳米尺度下微波 探测技术,如NMR、ESR 等,具有非常广阔的应用前景。文中综述了SMM 的基本原理,仪器 组成,并介绍了其在电学性质探测、各种新型材料、生物等方面的前沿应用实例。最后,文章展 望了扫描微波显微术的进一步技术发展和应用研究。     

微通道板表面发雾的AES分析

应用俄歇电子能谱对微通道板表面发雾区域进行分析。分析结果表明,发雾区碳含量比正常区高三倍。由此可推测出,发雾是由碳污染引起的,而这种碳污染很可能是残留于微通道板上的某些有机物在烧氢时碳化所致。     

阴极荧光在表面等离激元研究领域的应用

表面等离激元以其独特的光学性质广泛应用于纳米尺度的局域电磁场增强、超高分辨成像及微弱光电探测.阴极荧光是电子与物质相互作用而产生的光学响应,利用电子束激发金属纳米结构能够实现局域等离激元共振,并在亚波长尺度实现对共振模式的调控,具有超高空间分辨的成像特点.阴极荧光探测通常结合扫描电子显微镜或透射电子显微镜而实现,目前己被应用于表面等离激元的探测及共振模式的分析.本文从阴极荧光物理机理出发,综述了单一金属纳米结构和金属耦合结构的等离激元共振模式阴极荧光研究进展,并总结了阴极荧光与角分辨、时间分辨以及电子能量损失谱等关键技术相结合的应用,进一步分析了其面临的关键问题,最后展望了阴极荧光等离激元研究方向.     

Separating the vibrationally resolved Auger decay channels for a CO core hole state

The K-VV Auger spectrum of carbon monoxide (CO) excited by C 1s photoionization has been investigated with a novel electron-electron coincidence setup. The energy resolution is sufficiently high to resolve the vibrational energy levels of the core-ionized intermediate state and of most dicationic final states in the two-dimensional electron energy map. We demonstrate how the influence of vibrational states on a molecular Auger spectrum can be accessed experimentally without the constraint of averaging over all intermediate state energies.     

Elastic and inelastic contributions to the auger electron appearance potential spectrum of titanium

The energy distribution of electrons contributing to the L-shell Auger electron appearance potential spectrum of a polycrystalline titanium surface has been measured. The Auger electron appearance potential spectrum is obtained by differentiating the total secondary electron yield of an electron bombarded sample as a function of incident electron energy. At the threshold for scattering from a core level the secondary yield increases. Most of the electrons contributing to this increase have energies below 30 eV, and result from secondary processes following Auger recombination of the core hole. The elastic yield decreases at the threshold, however, due to opening a new channel for inelastic scattering. A comparison of the elastic yield spectrum (DAPS), the total yield spectrum (AEAPS) and the soft X-ray yield spectrum (SXAPS), shows very similar line shapes, but differences in the relative strengths of the lines.     

Ion excited auger spectra of aluminum

An Auger spectrum from aluminum has been detected for the first time using argon ion bombardment as the method for excitation. The Auger spectral line shape differs from that obtained using electron excitation.     

Many-electron effects in the Auger-photoelectron coincidence spectroscopy spectra of the late 3d-transition metals

The valence hole created by the L2–L3 M45 Coster–Kronig (CK) transition may hop away from the ionized atomic site before the L3-hole decays. Then when the third (Auger) electron emitted by the L3-hole decay is measured in coincidence with the photoelectron emitted by the initial L2-level electron ionization, the coincidence spectrum becomes similar or identical to the singles spectrum of the secondary (Auger) electron emitted by the L3-hole decay as if it decayed as an initial single core hole. Thus the coincidence spectrum is essentially governed by the valence-hole dynamics of both the intermediate states and the final states of the L2–L3 (M45) CK-transition preceded Auger transition. In the present paper the Auger-photoelectron coincidence spectroscopy (APECS) spectra of Fe, Co, and Ni metals reported by C.P. Lund et al. (Phys. Rev. B55 (1997) 5455) are analyzed in light of the delocalization and localization of the valence hole(s) created by the CK transition or the CK-transition preceded Auger transition.     

Auger-spectroscopic appearance of electron correlation at the Fermi surface of graphite

It is shown that, in Auger-electron spectra of three-dimensional semimetal graphite and two-dimensional graphite (a zero band-gap semiconductor), an energy gap should be observed between the thresholds (edges) of the forward and inverse processes (threshold gap). In the one-electron approximation, this gap is zero, since the threshold for the Auger spectrum of the forward process is the minimum hole energy in the valence band, while the threshold for the spectrum of the inverse process is the minimum energy of conduction electrons. Inclusion of the electron correlation at the Fermi surface within the quantum-chemical approximation of a single open electron shell for multiplet structures of the restricted Hartree-Fock method makes it possible to determine the threshold gap as 1.5 eV for a 48-atom cyclic model of three-dimensional graphite and as 2.0 eV for a 24-atom model of two-dimensional graphite. The threshold gap does not contain the Fermi energy, in contrast to the Auger spectrum thresholds, where \(\frac{1}{2}(4.0 eV - \varepsilon _F )\) for the forward Auger spectrum (holes) and \(\frac{1}{2}( - 1.1 eV + \varepsilon _F )\) for the inverse spectrum (conduction electrons), the sum of which gives this gap. The results of calculations for the forward Auger spectra of three-dimensional graphite (including the conclusion that electron correlation of holes in the top valence bands is weak in the Auger process) are shown to agree with the experimental data.     

Resonant Auger decay in the L2,3-MM spectrum of Ar excited by electron bombardment

The L_2,3-MM Auger spectrum of argon was measured using electron beam excitation. A weak structure on the high energy side of the main transitions was identified as corresponding to the resonant Auger transitions by comparing these spectral structures with individual resonant Auger spectra excited by monochromatic synchrotron radiation.     

Observation of selection rules and restricted valence band self convolution for the KVV Auger transition of alkali graphite intercalation compounds

The Auger spectrum of the KVV transition in alkali graphite intercalation compounds (AGIC's) gives unambiguous evidence that the electron states from the alkali metals in the valence band of the compound form a narrow structure in the KVV Auger spectrum which corresponds to the self convolution of these states and that they are not convoluted with the whole valence band. This observation shows that strong matrix element effects or selection rules for KVV Auger transitions have to be taken into account.     

High resolution Ne-Auger spectrum produced in 4.2 MeV H+-Ne collisions

Auger electrons resulting from 4.2 MeV proton impact on Ne were measured by 1.2 eV spectroscopic resolution. The proton-induced Auger spectrum was found to be identical to the spectra previously observed by electron and photon bombardment.     

Korrelationseffekte in den Auger-Spektren von Edelgasen

The possibility of studying correlation effects through Auger electron spectrometry has been shown recently by Krause, Carlson and Moddeman in the case of theK Auger spectrum of neon. As a further example we have measured theM _4,5 Auger spectrum of krypton with high resolution. Correlation effects have been found via the strong deviations of relative intensities of Auger diagram lines (e.g.M _4,5 N ₁ N _2,3(¹ p ₁)) from theoretical values and via the occurence of double Auger transitions, where one electron is emitted and another is excited. A critical examination of high resolution Auger spectra of noble gases, which has been measured so far, has shown that several non diagram lines can be assigned to double Auger transitions of the above kind.