Bethe logarithm and QED shift for lithium

A novel finite basis set method is used to calculate the Bethe logarithm for the ground 2 (2)S(1/2) and excited 3 (2)S(1/2) states of lithium. The basis sets are constructed to span a huge range of distance scales within a single calculation, leading to well-converged values for the Bethe logarithm. The results are used to calculate an accurate value for the complete quantum electrodynamic energy shift up to order alpha(3) Ry. The calculated 3 (2)S(1/2)-2 (2)S(1/2) transition frequency for 7Li is 27 206.092 6(9) cm(-1), and the ionization potential for the 2 (2)S(1/2) state is 43 487.158 3(6) cm(-1). The 7Li-6Li isotope shift is also considered, and all the results compared with experiment.     

Projectile coulomb excitation of Ne and Ne

The static quadrupole moments of the first excited J^π = 2⁺ states in ²⁰Ne and ²²Ne and the reduced electric quadrupole transition probabilities of these states to the ground states were measured via projectile Coulomb excitation. The quadrupole moments were deduced from the shapes of γ-ray angular distributions. The results are: Q(²⁰Ne, 2⁺) = −0.20±0.05 b and Q(²²Ne, 2⁺) = −0.11±0.05 b. The transition strengths were deduced from yield measurements and by comparison with the yields of target γ-rays. The results are: B(E2; 0⁺ → 2⁺, ²⁰Ne) = 0.037±0.003 e² · b² and B(E2; 0⁺ → 2⁺, ²²Ne) = 0.025±0.002 e²· b². The results for the transition strengths are consistent with the results of accurate timing methods and resolve discrepancies between previous experiments. The results for the quadrupole moments are consistent with earlier measurements, although the mean values we obtain are slightly lower. The experimental measurements are compared with theoretical predictions and a detailed discussion is given of corrections to this type of reorientation experiment.     

超精细能级中85Rb激发态(｜52P1/2F>、｜52P3/2F>)原子与理想金属表面间范德瓦尔斯作用系数C3的估算

利用碱金属原子与理想金属表面间范德瓦尔斯(vdW)作用势和不可约张量方法,首次计算了85Rb激发态52P1/2 (F=2,3)及52P3/2 (F=1,2,3,4) 原子超精细结构的C3系数.数值分别对应为:4.0542 、4.0553 及4.3012 、4.3312 、4.3369 、4.3104 .为了说明其结果的准确性,还与其他作者的理论数据和相关实验数据进行了比较,结果表明本文所得到的85Rb激发态52P1/2 (F=2,3)及52P3/2(F=1,2,3,4)原子的C3数值是可靠的     

Functional Dependence of the V-I Characterstic of an Arc on the Thermal Parameters

Numerical and analytical results of a self-consistent analysis of the voltage-current (V-I) characteristic of an electrical discharge are presented. The dependences of the critical current density for the onset of the arc and the peak voltage drop on the exponent n characterizing the dependence of conductivity on temperature are examined. They are found empirically to be proportional to (n - 3/2)-(n+1)/2(n-1) and (n - 3/2)-1/2, respectively.     

超精细能级中85Rb激发态(｜52P1/2F>、｜52P3/2F>)原子与理想金属表面间范德瓦尔斯作用系数C3的估算

利用碱金属原子与理想金属表面间范德瓦尔斯(vdW)作用势和不可约张量方法,首次计算了85Rb激发态52P1/2 (F=2,3)及52P3/2 (F=1,2,3,4) 原子超精细结构的C3系数.数值分别对应为:4.0542 、4.0553 及4.3012 、4.3312 、4.3369 、4.3104 .为了说明其结果的准确性,还与其他作者的理论数据和相关实验数据进行了比较,结果表明本文所得到的85Rb激发态52P1/2 (F=2,3)及52P3/2(F=1,2,3,4)原子的C3数值是可靠的     

氖原子奇宇称里德堡能级的理论计算

本文依据最弱受约束电子势模型理论,计算了氖原子1s22s22p5(2Po3/2)ns 2[3/2]o1,2(n=3～50) 和 1s22s22p5(2Po3/2)nd 2[1/2]o0,1(n=3～50)里德堡系列能级和量子亏损.计算结果与已有的51个实验数据符合得很好,并预言了141个能级的位置.     

A Finite Volume Method Based on the Constrained Nonconforming Rotated Q1-Constant Element for the Stokes Problem

We construct a finite volume element method based on the constrained nonconforming rotated Q₁-constant element (CNRQ₁-P₀) for the Stokes problem. Two meshes are needed, which are the primal mesh and the dual mesh. We approximate the velocity by CNRQ₁ elements and the pressure by piecewise constants. The errors for the velocity in the H¹ norm and for the pressure in the L² norm are O(h) and the error for the velocity in the L² norm is O(h²). Numerical experiments are presented to support our theoretical results.     

内嵌InAs量子点的δ掺杂GaAs/AlxGa1-xAs二维电子气特性分析

采用分子束外延技术对δ掺杂GaAs/Al_xGa_1-xAs二维电子气(2DEG)样品进行了生长. 在样品生长过程中, 分别改变掺杂浓度(N_d)、空间隔离层厚度(W_d) 和Al_xGa_1-xAs中Al组分(x_Al)的大小, 并在双温(300 K, 78 K)条件下对生长的样品进行了霍尔测量; 结合测试结果, 分别对N_d, W_d及x_Al与GaAs/Al_xGa_1-xAs 2DEG的载流子浓度和迁移率之间的关系规律进行了细致的分析讨论. 生长了包含有低密度InAs量子点层的δ掺杂GaAs/Al_xGa_1-xAs 2DEG 样品, 采用梯度生长法得到了不同密度的InAs量子点. 霍尔测量结果表明, 随着InAs量子点密度的增加, GaAs/Al_xGa_1-xAs 2DEG的迁移率大幅度减小, 实验中获得了密度最低为16×10⁸/cm²的InAs量子点样品. 实验结果为内嵌InAs量子点的δ掺杂GaAs/Al_xGa_1-xAs 2DEG的研究和应用提供了依据和参考. 关键词： 二维电子气 InAs量子点 载流子浓度 迁移率     

Influence of Ⅴ/Ⅲ ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy

A series of metamorphic high electron mobility transistors （MMHEMTs） with different Ⅴ/Ⅲ flux ratios are grown on CaAs （001） substrates by molecular beam epitaxy （MBE）. The samples are analysed by using atomic force microscopy （AFM）, Hall measurement, and low temperature photoluminescence （PL）. The optimum Ⅴ/Ⅲ ratio in a range from 15 to 60 for the growth of MMHEMTs is found to be around 40. At this ratio, the root mean square （RMS） roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm^2/（V.s） and 3.26×10^12cm^-2 respectively. These results are equivalent to those obtained for the same structure grown on InP substrate. There are two peaks in the PL spectrum of the structure, corresponding to two sub-energy levels of the In0.53Ga0.47As quantum well. It is found that the photoluminescence intensities of the two peaks vary with the Ⅴ/Ⅲ ratio, for which the reasons are discussed.     

Rh XⅢ—Cd XVI离子4s24p3—4s4p4能级与跃迁的理论计算

用HFR（Hartree-Fock with relativistic corrections）方法对Rb V—Cd XVI离子4s²4p³和4s4p⁴组态能级结构做了全面系统的理论计算研究. 通过分析能级结构参数的HFR理论计算值与基于实验能级拟合得到的计算值之比值随着原子序数Z_c变化的规律,运用广义拟合外推方法预言了这些离子能级结构参数. 由此进一步计算了Rh XⅢ,Pd XIV,Ag XV和Cd XVI离子4s²4p³（⁴S_3/2,²P_1/2,3/2,²D_3/2,5/2）和4s4p⁴（⁴P_1/2,3/2,5/2,²P_1/2,3/2,²D_3/2,5/2,²S_1/2）组态能级以及电偶极跃迁波长与振子强度. 研究表明,对于4s²4p³组态,单组态近似可以得到较满意的结果;而对于4s4p⁴组态,只有在考虑了4s²4p²4d的组态相互作用效应时,计算结果的准确性才能明显得到提高. 同时,本文还运用全相对论grasp2K-DEV程序包计算了Rh XⅢ—Cd XVI离子组态能级. 对于Rh XⅢ离子4s²4p³（²P_1/2）,Pd XIV离子4s²4p³（⁴S_3/2,²P_1/2,3/2,²D_3/2,5/2）和4s4p⁴（²P_1/2,3/2,²D_3/2,5/2,²S_1/2）,能级均无实验值;对于Ag XV和Cd XVI离子,截至目前还没实验能级数据,没有实验能级值的所有数据均仅来自本文的计算数值. 本文计算结果与已有实验值吻合得很好.     

Electric and magnetic polarizabilities of pointlike spin-1/2 particles

The electric and magnetic polarizabilities of pointlike spin-1/2 particles with an anomalous magnetic moment (AMM) are calculated by the transformation of an initial Hamiltonian into the Foldy-Wouthuysen (FW) representation. Corresponding results for spin-1/2 and spin-1 particles are compared.     

Fractal Aggregation Near the Threshold

In this papel, we present two fractal aggregation models, line pattern seed model (model 1) and point pattern seed model (model 2), which are particle-cluster models. Using the current models, we investigate the critical transition in fractal aggregation processes in two dimensions, and suggest a method for finding the critical transition point. The computer simulation results show that the critical concentration is P_ca=0.69±0.02 for model 1 and P_ca=0.72±0.01 for model 2, critical fractal dimension. D_c= 1.71±0.06 for model 1 and D_c=1.66±0.07 for model 2, which are in good agreement with those of DLA model (D=5/3) and experimental data. The results also show that the critical transition point in two dimensions seems to be inilependent of the size of lattices and the initial seed patterns. The results seem to belong to the same universality class.     

Mechanism and energetics of dimerization of SiH2 radicals on H-terminated Si(0 0 1)-(2×1) surfaces

The mechanism and energetics are presented of the dimerization of two adsorbed surface SiH₂ groups on the H-terminated Si(0 0 1)-(2 × 1) surface to form Si₂H₄ species during the initial stages of growth in plasma deposition of hydrogenated amorphous silicon (a-Si:H) films. The reactions are observed during classical molecular-dynamics (MD) simulations of a-Si:H film deposition from SiH₂ radical precursors impinging on an initially H-terminated Si(0 0 1)-(2 × 1) surface and substrate temperature, T, over the range 500T700 K. The Si₂H₄ species resulting from the surface SiH₂ dimerization reactions undergo surface conformational changes resulting in either a non-rotated (NRD) or a rotated dimer (RD) configuration. The RD configuration is found to be the energetically favorable one. The MD simulation results for the structure of the NRD and RD surface Si₂H₄ configurations corroborate with ab initio calculations of optimized adsorption configurations of SiH₂ radicals on crystalline Si surfaces, as well as results of STM imaging of the thermal decomposition of disilane on Si(0 0 1).     

SeN_2自由基解析势能函数的耦合簇理论研究

利用单双迭代耦合簇理论CCSD结合相关一致四重基组cc-pVQZ对SeN2基态的平衡结构和谐振频率进行了优化计算.计算结果表明:基态SeN2自由基分子稳定态为C2v构型,基态电子组态为X1A1,平衡核间距RSe-N=0.1691 nm,RN-N=0.1970 nm,αN-Se-N=71.289?,离解能De=4.78 eV.基态简正振动频率分别为:ν1=326.9288 cm-1,ν2=808.0161 cm-1以及ν3=948.3430 cm-1.对SeN基态和N2基态采用上述相同方法进行几何构型与谐振频率的计算并进行单点能扫描,使用Murrell-Sorbie函数进行最小二乘拟合得到其势能函数和光谱常数,通过和其他理论值以及实验值做比较,显示本文的计算工作达到了很高的精度.应用多体项展式理论导出了基态SeN2的全空间解析势能函数,其势能函数等值势能图准确再现了SeN2分子的结构特征和能量变化.     

The Finite Temperature Effects on the Coleman Phase Transition in Double Sine-Gordon Model

By means of the finite temperature Gaussian effective potential (FTGEP) method, the (1+1) and (2+1) dimensional quantum double sine-Gordon (DsG) field theories are studied nonperturbatively for finite temperature. The explicitly FTGEP is obtained for both (1+1) and (2+1) dimensional DaG models. The temperature-dependent Coleman phase transition conditions obtained by us would reduce to the known results g_cr² when T→0. The alternative explanation of the Coleman phase transition at finite temperature is that for fixed coupling constantg² there is a critical temperature T_cr (whose value depends ong²) such that the theory becomes unstable when the temperature of the system exceeds the critical value T_cr.     

Relativistic Calculations for Be-like Iron

Relativistic configuration interaction calculations for the states of 1s²2s², 1s²2s3l (l=s,p,d) and 1s²2p3l (l=s,p,d) configurations of iron are carried out using relativistic configuration interaction (RCI) and multi-configuration Dirac-Fock (MCDF) method in the active interaction approach. In the present calculation, a large-scale configuration expansion was used in describing the target states. These results are extensively compared with other available calculative and experimental and observed values, the corresponding present results are in good agreement with experimental and observed values, and some differences are found with other available calculative values. Because more relativistic effects are considered than before, the present results should be more accurate and reliable.     

氖原子奇宇称里德堡能级的理论计算

本文依据最弱受约束电子势模型理论,计算了氖原子1s22s22p5(2Po3/2)ns 2[3/2]o1,2(n=3-50) 和 1s22s22p5(2Po3/2)nd 2[1/2]o0,1(n=3-50)里德堡系列能级和量子亏损。计算结果与已有的51个实验数据符合得很好,并预言了141个能级的位置。     

Rb(5PJ)与He,N2的碰撞精细结构混合和猝灭

在气体样品池条件下,研究了Rb(5PJ) (He,N2)碰撞能量转移过程.用调频半导体激光器激发Rb原子至Rb(5P3/2)态,在不同的He或N2气压下,测量了直接5P3/2→5S1/2荧光和转移5P1/2→5S1/2荧光.对于Rb(5PJ)与He的碰撞,只发生精细结构转移(略去碰撞猝灭效应),电子态能量仅能转移为He原子的平动能.在与N2的碰撞中,向分子振转态的转移是重要的.本实验中,Rb的密度为4.5×1011 cm-3,由辐射陷获理论得到5P1/2→5S1/2的有效辐射率为2.47×107 s-1.利用速率方程分析,可以得到碰撞转移速率系数,对于He,5P3/2→5S1/2转移速率系数kHe21=2.61×10 12 cm3·s.对于N2,测量5PJ He和5PJ N2两种情况下直接荧光与敏化荧光的相对强度比,利用最小二乘法确定5Pa/2→5S1/2转移速率系数kN212=2.36×10-11 cm3·s,5PJ态猝灭速率系数kN2=1.44×10-11 cm3·s-1.由实验结果证实了Cs-N2主要是直线式碰撞传能机制,与其他实验结果进行了比较.     

Rb（5PJ）＋Rb（5PJ）→Rb（5JS）＋Rb（nl=5D，7S）碰撞能量合并

研究了Rb(5PJ)+Rb(5PJ)→Rb(nlJ')+Rb(5S)碰撞能量合并过程,利用单模半导体激光器分别共振激发Rb原子的5P1/2或5P3/2态,利用另一与泵浦激光束反向平行的单模激光束作为吸收线探测激发态原子密度及其空间分布,吸收线分别调至5P1/2→5D3/2和5P3/2→7S1/2跃迁.由激发态原子密度和谱线荧光比得到碰撞能量合并过程的截面,对5P3/2激发,碰撞转移得到5D5/2,5D3/2和7S1/2的截面分别是(1.32士0.59)×10-14,(1.18士0.53)×10-14和(3.21士1.44)×10-15cm2;对5P1/2激发,碰撞转移到5D5/2和5D3/2的截面分别是(6.57士2.96)×10-15和(5.90士2.66)×10-15cm2.与其他的实验结果进行了比较.