有限长双壁碳纳米管的电子输运性质

基于Landauer公式，研究了有限长的非公度和公度双壁碳纳米管的电子输运性顾，结果表明 ，双壁管的几何结构对其电子输运性质有显著的影响：非公度的双壁碳管的电导随能量的不 同，既可以是弹道型的，也可以是非弹道型的；由armchair管组成的公度的双壁碳管的电导 随能量变化呈现快速的电导振荡，并且此快速振荡叠加在背景慢振荡上，而zigzag管组成的 公度双壁管的电导随能量变化只有快速振荡、没有规则的慢振荡背景. 关键词： 碳纳米管 电子输运性质     

高透过率红外窗口保护薄膜的研制

在Si、Ge红外窗口上利用离子辅助电子束蒸发技术和RF-PECVD技术制备了具有高透过率的AR／DLC保护薄膜,并与单层DLC保护薄膜的光学性能进行了对比。所制备的高透过率保护薄膜达到如下性能：在3～5μm波段,Si基底上一面镀高效红外增透膜一面镀AR／DLC增强型保护薄膜的平均透过率达到约96％,较之镀DLC膜平均透过率提高了约4％。在8～12μm波段,Ge基底上一面镀高效红外增透膜一面镀AR／DLC增强型保护薄膜的平均透过率达到约95％,较之镀DLC膜平均透过率提高了约5％。有关薄膜样品都通过了相应的环境试验。     

激光／红外双波段减反射膜研究

在硫化锌、硒化锌两种基底上开展了激光／中波红外、激光／长波红外双波段减反射膜技术研究。通过采用离子辅助沉积以及镀保护膜层等方法,对膜系结构和镀制工艺进行了优化。研制的激光／红外双波段减反射膜不仅具有良好的光学性能,而且具有较强的抗恶劣环境能力,可以满足实际使用要求。     

Nonlinear current－voltage characteristics of sintered tungsten－vanadium oxide

We have studied the densification behaviour, microstructure and electrical properties of WO_3 ceramics with V_2O_5 as the additive ranging from 0.5 to 15mol%. Scanning electron microscopic photos indicated that the grain size of WO_3－V_2O_5 specimens is smaller than that of pure WO_3. The addition of V_2O_5 to WO_3 showed a tendency to enhance the densification rate and to restrict the grain growth. Electrical properties of all specimens were measured for different electrodes at different temperatures. The formation of the grain boundary barrier layer was confirmed by the non-ohmic I－V behaviour. The nonlinear coefficient was obtained at the current density J=0.01, 0.1 and 1mA/cm^2 for a series of WO_3－V_2O_5 samples. The V0.5mol% specimen showed an abnormal phenomenon that the nonlinear characteristics appeared at 350℃ and disappeared at lower and higher temperatures. This implies that it could be applied as a high-temperature varistor. The double Schottky barrier model was adopted to explain the phenomena for the WO_3-V_2O_5 varistors.