Ballistic transport and quantum interference in InSb nanowire devices |
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| Affiliation: | 1.Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China;2.Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia;3.Institute of Electronics Microelectronics and Nanotechnology, CNRS-UMR 8520, Avenue Poincaré, C. S. 60069, 59652 Villeneuve d'Ascq, France |
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| Abstract: | An experimental realization of a ballistic superconductor proximitized semiconductor nanowire device is a necessary step towards engineering topological quantum electronics. Here, we report on ballistic transport in InSb nanowires grown by molecular-beam epitaxy contacted by superconductor electrodes. At an elevated temperature, clear conductance plateaus are observed at zero magnetic field and in agreement with calculations based on the Landauer formula. At lower temperature, we have observed characteristic Fabry-Pérot patterns which confirm the ballistic nature of charge transport. Furthermore, the magnetoconductance measurements in the ballistic regime reveal a periodic variation related to the Fabry-Pérot oscillations. The result can be reasonably explained by taking into account the impact of magnetic field on the phase of ballistic electron's wave function, which is further verified by our simulation. Our results pave the way for better understanding of the quantum interference effects on the transport properties of InSb nanowires in the ballistic regime as well as developing of novel device for topological quantum computations. |
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| Keywords: | InSb nanowire ballistic transport quantum interference |
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