Polarization switching kinetics of ferroelectric nanostructures of vinylidene fluoride-trifluoroethylene copolymer

The polarization switching kinetics of ferroelectric polymer Langmuir-Blodgett films and copolymer nanocrystals (nanomesas) was investigated using piezoresponse force microscopy. The nanocrystals were prepared by self-organization from Langmuir-Blodgett films of a 70% vinylidene fluoride and 30% trifluoroethylene copolymer. The polarization switching time exhibits an exponential dependence on reciprocal voltage and decreases with temperature being consistent with the nucleation switching dynamics.     

Ferroelectric polarization reversal tuned by magnetic field in a ferroelectric BiFeO3/Nb-doped SrTiO3 heterojunction

Interfacial resistive switching of a ferroelectric semiconductor heterojunction is highly advantageous for the newly developed ferroelectric memristors. Moreover, the interfacial state in the ferroelectric semiconductor heterojunction can be gradually modified by polarization reversal, which may give rise to continuously tunable resistive switching behavior. In this work, the interfacial state of a ferroelectric BiFeO₃/Nb-doped SrTiO₃ junction was modulated by ferroelectric polarization reversal. The dynamics of surface screening charges on the BiFeO₃ layer was also investigated by surface potential measurements, and the decay of the surface potential could be speeded up by the magnetic field. Moreover, ferroelectric polarization reversal of the BiFeO₃ layer was tuned by the magnetic field. This finding could provide a method to enhance the ferroelectric and electrical properties of ferroelectric BiFeO₃ films by tuning the magnetic field.     

Polarization switching in perforated ferroelectric films

The polarization switching in ferroelectric films of barium strontium titanate with a planar structure of interdigitated electrodes has been studied experimentally. The local polarization distribution in an interelectrode gap of these films in an applied electric field has been investigated using nonlinear optical microscopy. The polarization switching parameters of unperforated and perforated films have been compared.     

Nanosecond dynamics of ferroelectric/dielectric superlattices

The nanosecond response of a PbTiO(3)/SrTiO(3) ferroelectric/dielectric superlattice to applied electric fields is closely linked to the dynamics of striped domains of the remnant polarization. The intensity of domain satellite reflections observed with time-resolved x-ray microdiffraction decays in 5-100 ns depending on the magnitude of the electric field. The piezoelectric response of the superlattice within stripe domains is strongly suppressed due to electromechanical clamping between adjacent regions of opposite polarization. Regions of the superlattice that have been switched into a uniform polarization state by the applied electric field, however, exhibit piezoelectricity during the course of the switching process. We propose a switching model different from previous models of the switching of superlattices, based instead on a spatially heterogeneous transformation between striped and uniform polarization states.     

微结构对Eu掺杂Bi4Ti3O12铁电薄膜铁电性能的影响

采用金属有机物分解法在Pt/Ti/Si(111)基底上制备了退火温度分别为600℃,650℃,700℃的Bi_3.15Eu_0.85Ti₃O₁₂(BET)铁电薄膜,并对其结构及铁电性能进行了测试,再使用扫描探针显微镜对BET薄膜的电畴翻转进行了实时观测.BET薄膜c畴发生180°畴变的最小电压为+6V,而r畴由于其高四方性,即使极化电压增至+12V也不会发生翻转.薄膜的铁电性主要源于c畴的极化,随着退火温度的升高,c畴的区域面积增加,BET薄膜的剩余极化强度随之增大.退火温度为700℃的BET薄膜剩余极化强度达到84μC/cm². 关键词： 铁电薄膜 电畴翻转 扫描探针显微镜     

Investigation of ferroelectric properties of bismuth ferrite films by the second optical harmonic generation technique

The specific features of the ferroelectric polarization switching in bismuth ferrite thin films doped with neodymium ions are investigated by the optical second harmonic generation technique. The structure and nonlinear optical properties of the samples prepared are studied in the course of ferroelectric polarization switching in planar geometry over wide ranges of film thicknesses and electric field frequencies.     

铁电双层膜的反转动力学行为

基于Landau-Khalatnikov运动方程,本文研究了含有表面过渡层和铁电界面耦合的反转动力学行为(包括平均极化、反转时间、反转电流和矫顽场).研究结果表明:在铁电双层膜系统中存在一个竞争的机理,即表面过渡层与界面耦合的竞争作用.我们发现在双层膜反转过程中出现了反常行为,这些反常行为归因于表面过渡层与界面耦合之间的竞争.表面过渡层与界面耦合的共同行为对铁电双层膜的动力学特性起到了决定性的作用.     

Domain wall creep in epitaxial ferroelectric Pb(Zr(0.2)Ti(0.08)O(3) thin films

Ferroelectric switching and nanoscale domain dynamics were investigated using atomic force microscopy on monocrystalline Pb(Zr(0.2)Ti(0.8))O(3) thin films. Measurements of domain size versus writing time reveal a two-step domain growth mechanism, in which initial nucleation is followed by radial domain wall motion perpendicular to the polarization direction. The electric field dependence of the domain wall velocity demonstrates that domain wall motion in ferroelectric thin films is a creep process, with the critical exponent mu close to 1. The dimensionality of the films suggests that disorder is at the origin of the observed creep behavior.     

Analysis of polarization switching in ferroelectric crystals in the injection mode

We report on the results of experiments on polarization switching in a ferroelectric TGS crystal during injection of electron beams from a scanning electron microscope under a surface layer. A series of models reflecting the polarization switching dynamics of a ferroelectric crystal under the action of an injected charge is constructed. The implementation of these models is based on the principles of evolution of domain structures taking into account analysis of possible polarization switching mechanisms for ferroelectric samples. A mathematical model developed using these principles demonstrates qualitative similarity of model current pulses and those obtained experimentally in the injection mode.     

Investigation of the fractal features of the polarization reversal processes in ferroelectric crystals under injection conditions

The features of polarization reversal processes of ferroelectric crystals are analyzed under the condition that electron beams of a scanning electron microscope are injected into the subsurface layer of a sample. The proposed mathematical model describes the dynamics of the polarization switching of a ferroelectric crystal using the injection contact technique. The simulation relies on the basic principles of scale invariance in domain structure evolution. The polarization switching current of ferroelectric crystals is investigated as the dynamic characteristic of a finite medium exhibiting fractal behavior. The application of fractal and multifractal analysis of a time series enables us to calculate the fractal dimension of the polarization reversal process under injection conditions.     

Nonlinear repolarization processes in ferroelectric liquid-crystal thin films

The dynamics of spontaneous polarization switching of the ferroelectric smectic C* in a variable electric field are examined theoretically and experimentally with the help of polarized light scattering. The observed effect of quasiresonant scattering both in freely suspended smectic films and in ordinary electro-optical cells is interpreted within the framework of the nonlinear model of isolated movable kinks in the director orientation distribution. It is shown that the maximum of the scattering intensity at the characteristic frequency of the applied electric field disappears at low temperatures and for small thicknesses of the smectic film. The dependence of the “resonant” frequency on the electric field amplitude, the proximity to the phase transition temperature, the film thickness and thickness of the ferroelectric domains, and also various material parameters is found. Estimates are made of such important characteristics as the dielectric anisotropy, viscosity, and elasticity of the smectic films. The effect of film thickness on the density distribution of the polar anisotropy energy in the film and on the corresponding shape of the moving orientation front within the film are discussed. Zh. éksp. Teor. Fiz. 111, 919–937 (March 1997)     

Nanoscale imaging of ferroelectric domain and resistance switching in hybrid improper ferroelectric Ca3Ti2O7 thin films

Hybrid improper ferroelectrics have their electric polarization generated by two or more combined non-ferroelectric structural distortions such as the rotation and tilting of Ti-O octahedral in Ca₃Ti₂O₇ (CTO) family. In this work, we prepared different thickness CTO thin films on Pt substrates by pulsed laser deposition, and investigated their ferroelectric polarization reversal and the current transport properties by using the piezoresponse force microscopy and conducting atomic force microscopy, respectively. It is found that the CTO films exhibit clear ferroelectric domain switching and ferroelectric resistance switching behaviors, and the maximum resistive ratios of CTO film reaches ∼1750. These results demonstrate that hybrid improper ferroelectrics CTO films are promising materials for being employed in non-volatile memory and logic devices.     

Effect of pore size on ferroelectric properties of multiferroic BiFeO3 films prepared on porous silicon

The ferroelectric properties of BiFeO₃ (BFO) films spray deposited on porous silicon have been studied. The analysis of XRD and FESEM investigations show that the crystalline strain in the BFO films increases with pore size. The BFO films on porous silicon substrate showed improvement in ferroelectric fatigue behavior, remanent polarization and ferroelectric switching time. A maximum memory window of 5.54 V at 1 MHz and a large remanent polarization (P_r) of 13.1 μC/cm² have been obtained at room temperature. The improvement in the ferroelectric properties of these films has been correlated to the crystalline strain.     

Properties of BaTiO3/BaZrO3 ferroelectric superlattices with competing instabilities

Properties of (BaTiO₃)₁/(BaZrO₃) _n ferroelectric superlattices (SLs) with n = 1?7 grown in the [001] direction are calculated from first principles within the density functional theory. It is revealed that the quasi-two-dimensional ferroelectricity occurs in these SLs in the barium titanate layers with a thickness of one unit cell; the polarization is oriented in the layer plane and weakly interacts with the polarization in neighboring layers. The ferroelectric ordering energy and the height of the barrier separating different orientational states of polarization in these SLs are sufficiently large to provide the formation of an array of independent polarized planes at 300 K. The effect of the structural instability on the properties of SLs is considered. It is shown that the ground state is a result of simultaneous condensation of the Γ₁₅ polar phonon and phonons at the M point (for SLs with even period) or at the A point (for SLs with odd period); it is a polar structure with out-of-phase rotations of the octahedra in neighboring layers, in which highly polarized layers are spatially separated from the layers with strong rotations. The competition between the ferroelectric and structural instabilities in biaxially compressed SLs manifests itself in that the switching on of the octahedra rotations leads to an abrupt change of the polarization direction and can cause an improper ferroelectric phase transition to occur. It was shown that the experimentally observed z-component of polarization in the SLs can appear only as a result of the mechanical stress relaxation.     

Interface effects in ferroelectric PbTiO3 ultrathin films on a paraelectric substrate

Interface effects on the ferroelectric behavior of PbTiO3 ultrathin films deposited on a SrTiO3 substrate are investigated using an interatomic potential approach with parameters fitted to first-principles calculations. We find that the correlation of atomic displacements across the film-substrate interface is crucial for the stabilization of the ferroelectric state in films a few unit cells thick. We show that the minimum film thickness for the appearance of a spontaneous polarized domain state is not an intrinsic property of the ferroelectric film but depends on the polarizability of the paraelectric substrate. We also observe that the substrate displays an induced polarization with an unusual oscillatory behavior.     

聚(偏氟乙烯-三氟乙烯)纳米薄膜极化反转与疲劳特性

采用旋涂法制备了厚度为140 nm的聚(偏氟乙烯-三氟乙烯)[P(VDF-TrFE)]纳米薄膜, 研究了不同退火温度以及环境相对湿度对薄膜的极化反转和疲劳性能的影响. 运用X射线衍射仪、扫描电子显微镜和傅里叶变换红外光谱仪等测试技术对薄膜的微结构进行了表征. 实验结果表明, 通过不同温度的退火处理, P(VDF-TrFE)铁电薄膜的结晶度随着退火温度的升高而不断提高, 并且一定的温度范围内的退火处理可以提高薄膜的极化性能; 此外, P(VDF-TrFE) 铁电薄膜性能还表现出一定的环境湿度的敏感特性, 这与薄膜的物理性能和结构特点密切相关; P(VDF-TrFE)铁电薄膜在不同的环境湿度条件下 表现出较好的电学特性, 其漏电流均保持在10 ^-7A/cm² 的较低水平. 本工作揭示了再退火过程对薄膜的极化反转速度和疲劳恢复特性的影响, 并结合薄膜二次疲劳结果, 探讨了薄膜可逆的内部疲劳恢复特性机理.     

Generation of entangled states in polydomain potassium-dihydrophosphate crystals

It is shown experimentally that polarized entangled two-photon states in a pair of frequency modes can appear in the process of the spontaneous parametric down conversion in ferroelectric crystals with a quasi-regular domain structure (such as potassium dihydrophosphate). Entanglement measures and polarization characteristics of these states are determined.     

A viscoelastic model of polarization switching in polymer ferroelectrics

The theoretical aspects of the viscoelastic model for polarization switching in ??soft?? organic ferroelectrics have been considered. The model describes the amplitude-frequency dependences of the hysteresis loops obtained upon polarization switching in thin films of the ferroelectric copolymer poly(vinylidene fluoride-trifluoroethylene).     

Au/PZT/BIT/p-Si异质结的制备与性能研究

采用脉冲激光沉积(PLD)工艺,制备了以Bi₄Ti₃O₁₂(BIT)为过渡阻挡层的Au/PZT/BIT/p-Si异质结.研究了BIT铁电层对Pb(Zr_0.52Ti_0.48)O₃(PZT)薄膜晶相结构、铁电及介电性能的影响,对Au/PZT/BIT/p-Si异质结的导电机制进行了讨论.氧气氛530℃淀积的PZT为多晶铁电薄膜,与直接淀积在Si基片上相比,加入BIT铁电层后PZT铁 关键词： 铁电薄膜 异质结构 脉冲激光沉积(PLD)     

A high-efficient method for generating radially and azimuthally polarized Bessel beams using biaxial crystals

As was shown previously, in propagation of a circularly polarized Bessel light beam along the optical axes of a biaxial crystal, there takes place the conversion of the order of Bessel function. In this paper, a new result is presented which is obtained by varying the polarization state of an input beam. Namely, a linearly polarized beam can be transformed into a beam with the radial or azimuthal polarization state. At that the order-transformation also occurs. The switching between radial and azimuthal polarization states of the output beam is performed by the proper switching between two orthogonal linear polarization states of the input beam. The efficiency of polarization conversion is high and can be practically full at an appropriate choice of the cone angle of the input beam or crystal length.