| 微结构对Eu掺杂Bi4Ti3O12铁电薄膜铁电性能的影响 |
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| 引用本文： | 吕业刚,梁晓琳,谭永宏,郑学军,龚跃球,何林.微结构对Eu掺杂Bi4Ti3O12铁电薄膜铁电性能的影响[J].物理学报,2011,60(2):27701-027701. |
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| 作者姓名： | 吕业刚 梁晓琳 谭永宏 郑学军 龚跃球 何林 |
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| 作者单位： | (1)湖南科技学院电子工程系,永州 425100; (2)湖南科技学院电子工程系,永州 425100;湘潭大学材料与光电物理学院,湘潭 411105; (3)湘潭大学材料与光电物理学院,湘潭 411105 |
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| 基金项目： | 湖南永州市科技局(批准号:永科发[2009]20号)资助的课题. |
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| 摘 要： | 采用金属有机物分解法在Pt/Ti/Si(111)基底上制备了退火温度分别为600℃,650℃,700℃的Bi3.15Eu0.85Ti3O12(BET)铁电薄膜,并对其结构及铁电性能进行了测试,再使用扫描探针显微镜对BET薄膜的电畴翻转进行了实时观测.BET薄膜c畴发生180°畴变的最小电压为+6V,而r畴由于其高四方性,即使极化电压增至+12V也不会发生翻转.薄膜的铁电性主要源于c畴的极化,随着退火温度的升高,c畴的区域面积增加,BET薄膜的剩余极化强度随之增大.退火温度为700℃的BET薄膜剩余极化强度达到84μC/cm2.
关键词：
铁电薄膜
电畴翻转
扫描探针显微镜
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| 关 键 词： | 铁电薄膜 电畴翻转 扫描探针显微镜 |
| 收稿时间： | 5/9/2010 12:00:00 AM |
Effect of microstructure on the ferroelectric properties of Eu-doped Bi4Ti3O12 ferroelectric thin film |
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| Lü Ye-Gang,Liang Xiao-Lin,Tan Yong-Hong,Zheng Xue-Jun,Gong Yue-Qiu,He Lin.Effect of microstructure on the ferroelectric properties of Eu-doped Bi4Ti3O12 ferroelectric thin film[J].Acta Physica Sinica,2011,60(2):27701-027701. |
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| Authors: | Lü Ye-Gang Liang Xiao-Lin Tan Yong-Hong Zheng Xue-Jun Gong Yue-Qiu He Lin |
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| Institution: | Department of Electronic Engineering, Hunan University of Science and Engineering, Yongzhou 425100, China;Faculty of Material and Photoelectronic Physics, Xiangtan University, Xiangtan 411105, China;Department of Electronic Engineering, Hunan University of Science and Engineering, Yongzhou 425100, China;Department of Electronic Engineering, Hunan University of Science and Engineering, Yongzhou 425100, China;Faculty of Material and Photoelectronic Physics, Xiangtan University, Xiangtan 411105, China;Faculty of Material and Photoelectronic Physics, Xiangtan University, Xiangtan 411105, China;Faculty of Material and Photoelectronic Physics, Xiangtan University, Xiangtan 411105, China |
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| Abstract: | Eu-doped bismuth titanate Bi3.15Eu0.85Ti3O12 (BET) ferroelectric thin film was prepared on the Pt/Ti/Si(111) substrates by metal-organic decomposition (MOD) at different annealing temperatures of 600℃, 650℃ and 700℃. The structure and ferroelectric properties of BET thin film were analyzed. The nanoscale domain switching was investigated by scanning probe microscopy (SPM) via direct observation. When the polarizing voltage increases to +6V, the ferroelectric c-domain suffers 180° domain switching. The ferroelectric r-domain can not be reversed due to its highly tetragonal structure even if the polarized voltage value increases to +12V. The ferroelectric properties of the BET thin films are dependent on the polarization of ferroelectric c-domain. With the increasing annealing temperature, the area of c-domain becomes larger, and the remnant polarization (2Pr) values of BET films increase. The value of 2Pr reaches 84μC/cm for BET thin film annealed at the temperature of 700℃. |
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| Keywords: | ferroelectric thin film domain switching scanning probe microscopy |
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