带多孔硅表面缺陷腔的半无限光子晶体Tamm态及其折射率传感机理

结合表面缺陷半无限光子晶体Tamm态与多孔硅光学传感机理,在光子晶体表面缺陷腔中引入多孔硅,并利用其高效的承载机制,提出基于多孔硅表面缺陷光子晶体Tamm态的折射率传感结构.在半无限光子晶体中缺陷腔与原来的周期性分层介质结构的界面上存在Tamm态,通过入射角度调制使其在缺陷腔中实现多次全反射,并在缺陷腔中加入吸收介质,使谐振波长在缺陷腔中完成衰荡,从而在反射谱中得到缺陷峰;调整光子晶体参数,使缺陷峰的半高全宽得到优化,提高其品质因数(Q值);在此基础上,根据Goos-H?nchen相位移与谐振波长的关系,建立由待测样本折射率改变所导致的多孔硅表面吸附层有效折射率变化与缺陷峰值波长漂移之间的关系模型,并分析其折射率传感特性.结果表明,此生物传感结构Q值为1429,灵敏度为546.67 nm/RIU,证明了该传感结构的有效性,可为高Q值和高灵敏度折射率传感器的设计提供一定的理论参考.     

Buffer layer influence on guiding properties of oxidized porous silicon waveguides

We studied the influence of the thickness and porosity of the buffer layer on the guiding properties of oxidized porous silicon waveguides (OPSWG). It is demonstrated how a modified anodization process acts on the porosity of the final oxidized porous silicon. In this way, it is possible to control the refractive index jump between the core of OPSWG made of compact silicon dioxide and the bottom buffer layer made of porous silicon dioxide. The adoption of a double-step anodization process decreases the propagation losses to 0.5 dB/cm against the 8 dB/cm measured for the waveguide realized using a single-step anodization. The main reason seems not to be the increase of the difference of refractive index values but the more homogeneous buffer layer obtained along the core of the waveguide. This homogeneous layer permits a better lateral confinement of the light as demonstrated by spatial refractive index profile measurement.     

基于多孔硅的表面等离子共振传感特性

提出了一种基于多孔硅的表面等离子共振传感模型:棱镜-金属膜-多孔硅薄膜-待测介质。在该结构中,多孔硅的折射率会随着样品浓度的变化而变化。利用有限元分析方法,数值模拟得到该结构的共振光谱,对模型进行了分析和参数优化。以乙二醇溶液为待测样本,对提出的传感结构的传感性能进行分析,得到该传感器对乙二醇的传感灵敏度约为267.85(°)/RIU,约为Kretschmann棱镜结构灵敏度的2.13倍。     

等离子体浸没离子注入制备黑硅抗反射层及其光学特性研究

表面织构是一种有效降低表面反射率、提高硅基太阳能电池效率的方法. 采用等离子体浸没离子注入的方法制备了黑硅抗反射层.分别通过原子力显微镜和紫外-可见-近红外分光光度计对黑硅样品表面形貌和反射率进行分析, 结果发现黑硅样品表面布满了高度为0—550 nm的山峰状结构, 结构层中硅体积分数和折射率随抗反射层厚度增加而连续降低. 在300—1000 nm波段范围内,黑硅样品的加权平均反射率低至6.0%. 通过传递矩阵方法对黑硅样品反射谱进行模拟,得到的反射谱与实测反射谱非常符合.     

Thermal annealing dependence of some optical properties of plasma-modified porous silicon

The photoluminescence and reflectance of porous silicon (PS) with and without hydrocarbon (CH_x) deposition fabricated by plasma enhanced chemical vapour deposition (PECVD) technique have been investigated. The PS samples were then, annealed at temperatures between 200 and 800 °C. The influence of thermal annealing on optical properties of the hydrocarbon layer/porous silicon/silicon structure (CH_x/PS/Si) was studied by means of photoluminescence (PL) measurements, reflectivity and ellipsometry spectroscopy. The composition of the PS surface was monitored by transmission Fourier transform infrared (FTIR) spectroscopy. Photoluminescence and reflectance measurements were carried out before and after annealing on the carbonized samples for wavelengths between 250 and 1200 nm. A reduction of the reflectance in the ultraviolet region of the spectrum was observed for the hydrocarbon deposited polished silicon samples but an opposite behaviour was found in the case of the CH_x/PS ones. From the comparison of the photoluminescence and reflectance spectra, it was found that most of the contribution of the PL in the porous silicon came from its upper interface. The PL and reflectance spectra were found to be opposite to one another. Increasing the annealing temperature reduced the PL intensity and an increase in the ultraviolet reflectance was observed. These observations, consistent with a surface dominated emission process, suggest that the surface state of the PS is the principal determinant of the PL spectrum and the PL efficiency.     

Determination of the effective refractive index of porous silicon/polymer composite films

The equation for calculating the effective refractive index of porous silicon inserted polymer was obtained by three-component Bruggeman effective medium model. The dependence of the effective refractive index of porous silicon/polymer composite films on the polymer fraction with various initial porosity was given theorically and experimentally respectively. The porous silicon and polymer polymethylmetacrylate based dispersive red one (PMMA/DR1) composite films were fabricated in our experiments. It is found that the measured effective refractive index of porous silicon inserted polymer was slightly lower than the calculated result because of the oxidization of porous silicon. The effective refractive index of oxidized porous silicon inserted polymer also was analyzed by four-component medium system.     

Design optimization of highly sensitive LSPR enhanced surface plasmon resonance biosensors with nanoholes

For breaking through the sensitivity limitation of conventional surface plasmon resonance (SPR) biosensors, novel highly sensitive SPR biosensors with Au nanoparticles and nanogratings enhancement have been proposed recently.But in practice, these structures have obvious disadvantages.In this study, a nanohole based sensitivity enhancement SPR biosensor is proposed and the influence of different structural parameters on the performance is investigated by using rigorous coupled wave analysis (RCWA).Electromagnetic field distributions around the nanohole are also given out to directly explain the performance difference for various structural parameters.The results indicate that significant sensitivity increase is associated with localized surface plasmons (LSPs) excitation mediated by nanoholes.Except to outcome the weakness of other LSP based biosensors, larger resonance angle shift, reflectance amplitude, and sharper SPR curves' width are obtained simultaneously under optimized structural parameters.     

Influence of experimental parameters on physical properties of porous silicon and oxidized porous silicon layers

This paper reports physical properties of porous silicon and oxidized porous silicon, manufactured by anodisation from heavily p-type doped silicon wafers as a function of experimental parameters. The growth rate and refractive index of the layers were studied at different applied current densities and glycerol concentrations in electrolyte. When the current density varied from 5 to 100 mA/cm², the refractive index was between 1.2 and 2.4 which corresponded to a porosity range from 42 to 85%. After oxidation, the porosity decreased and was between 2 and 45% for a refractive index range from 1.22 to 1.46. The thermal processing also induced an increase in thickness which was dependent on the initial porosity. This increase in thickness was more important for the lowest porosities. Lastly, the roughness of the porous layer/silicon substrate interface was studied at different applied current densities and glycerol concentrations in solution. Roughness decreased when the current density or glycerol concentration increased. Moreover, roughness was also reduced by thermal oxidation.     

纤锌矿结构AlInN电子及光学性质的第一性原理研究

本文通过基于密度泛函理论的第一性原理,研究了纤锌矿结构Al1-xInxN在不同In浓度下的稳固结构,以及电子和光学性质的变化规律。研究表明,AlInN不同In浓度的晶格结构都很稳定,说明AlInN的兼容性很好。晶格常数随In浓度的增大不断增大,而混晶的带隙则不断减小。并且随In浓度的增大,混晶在紫外光区的吸收系数、反射系数及折射率增大,吸收边、吸收峰和反射峰蓝移,且这两个峰的峰值减小。AlInN的吸收、反射和折射率曲线在Eg处出现峰值行为,此Eg处的峰值大小随In浓度的增加而增大。当In浓度达到87.5%时,混晶AlInN在紫外光区的吸收、反射和折射能力均达到最强,表明此时的掺杂效果最好。     

纤锌矿结构AlInN电子及光学性质的第一性原理研究

本文通过基于密度泛函理论的第一性原理,研究了纤锌矿结构Al1-xInxN在不同In浓度下的稳固结构,以及电子和光学性质的变化规律。研究表明,AlInN不同In浓度的晶格结构都很稳定,说明AlInN的兼容性很好。晶格常数随In浓度的增大不断增大,而混晶的带隙则不断减小。并且随In浓度的增大,混晶在紫外光区的吸收系数、反射系数及折射率增大,吸收边、吸收峰和反射峰蓝移,且这两个峰的峰值减小。AlInN的吸收、反射和折射率曲线在Eg处出现峰值行为,此Eg处的峰值大小随In浓度的增加而增大。当In浓度达到87.5%时,混晶AlInN在紫外光区的吸收、反射和折射能力均达到最强,表明此时的掺杂效果最好。     

Structural and optical features of nanoporous silicon prepared by electrochemical anodic etching

Nanoporous silicon (NPS) samples were prepared by electrochemical anodic etching of p-type (0 0 1) silicon wafers in HF solution, and some of them were aged in air. The nanostructural, optical and chemical features of the NPS were investigated in terms of etching and aging conditions. The surface of the porous Si exhibits an etched layer with a thickness of 30–40 nm; this layer appears to consist of aggregates of 5–10 nm size nano-crystallites. The NPS exhibited broad photoluminescence (PL) spectra with its peak in the red light region (740 nm). After aging the porous samples for 4 weeks in air, we observed the PL intensity became approximately a fifth of that of the as-prepared one, along with a blue shift. It is very likely that the blue shift of the PL peak was caused by the shrinkage of the Si nano-crystallites due to the oxidation in the surface of the nano-crystallites.     

Measurement of Refractive Index for High Reflectance Materials with Terahertz Time Domain Reflection Spectroscopy

A method to measure the refractive index for high reflectance materials in the terahertz range with terahertz time domain reflection spectroscopy is proposed. In this method, the THz waveforms reflected by a silicon wafer and high reflectance sample are measured respectively. The refractive index of the silicon wafer, measured with the THz time domain transmission spectroscopy, is used as a reference in the THz time domain reflective spectroscopy. Therefore, the complex refractive index of the sample can be obtained by resorting to the known reflective index of the silicon and the Fresnel law. To improve the accuracy of the phase shift, the Kramers-Kronig transform is adopted. This method is also verified by the index of the silicon in THz reflection spectroscopy. The bulk metal plates have been taken as the sample, and the experimentally obtained metallic refractive indexes are compared with the simple Drude model.     

电化学制备薄黑硅抗反射膜

采用计算机控制电流密度按指数规律衰减对单晶硅进行电化学腐蚀,得到了折射率随薄膜厚度连续均匀变化的抗反射膜,即黑硅样品. 这种在制取上快速、经济和工艺非常简单的样品,不仅在较宽波段范围内反射率小于5%,且整个薄膜厚度不足1μm. 利用传输矩阵方法对黑硅样品的反射谱进行模拟,得到了理论与实验符合较好的结果. 关键词： 多孔硅 折射率 抗反射膜 黑硅     

常压百级洁净度环境中SiO2薄膜稳定性

在常压百级洁净度环境下,采用三种不同折射率的SiO₂溶胶在熔石英基底上涂制四种不同薄膜,利用光学理论计算模拟了三种胶体涂制的膜层稳定性,通过实验考查了膜层光学指标随时间的变化规律。SiO₂薄膜能够显著提升光学元件透射率,但由于膜层表面的大量羟基及其多孔结构,SiO₂薄膜易吸附周围环境中的有机污染物及水分填充膜层孔隙,从而导致膜层折射率发生变化,影响膜层透射率、反射率等光学性能。实验结果发现,三种溶胶凝胶化学膜在常压百级环境中的有效期为80 d(绝对变化率小于0.1%),且三种胶体涂制的膜层稳定性由高到低依次为折射率1.19, 1.15, 1.25的膜层。     

Random thickness errors-effect on reflectance of multilayer

In this paper the effect of thickness errors on the reflectance of multilayer is investigated. Using the matrix method, we deduced an expression for describing the dependence of reflectance on the film thickness errors. It is found that the degree of the thickness error-effect is affected by the ratio of low refractive index with high refractive index and the number of layer of multilayer. The computer simulations show that the degree of this effect is very small when the ratio is small and the number of layer is large. The thickness error hardly influences the reflectance of short-wave multilayer.     

Use of porous silicon for double- and triple-layer antireflection coatings in silicon photovoltaic converters

Reflectance spectrum calculations of double- and triple-layer antireflection coatings made of porous silicon layer are performed, using the optical matrix approach method. Obtained results are compared with the reflectance spectrum of other type antireflection coatings. Lower reflectance value of both double- and triple-layer antireflection coatings made of porous silicon is obtained in comparison to that of SiO₂/TiO₂ antireflection coating. These results can be used in photovoltaic converters.     

Synthesis and characterization of porous silicon layers for 1D photonic crystal application

In this paper, we studied the optical and physical properties of electrochemically prepared porous silicon layers. The atomic force microscopy analysis showed that the etching depth, pore diameter and surface roughness increase as the etching time increased from 30 to 50 mA/cm². By tuning two current densities J₁ = 50 mA/cm² and J₂ = 30 mA/cm², two samples of 1D porous silicon photonic crystals were fabricated. The layered structure of 1D photonic crystals has been confirmed by scanning electron microscopy measurement which showed white and black strips of two distinct refractive index layers. Finally, the measured reflectance spectra of 1D porous silicon photonic crystals were compared with simulated results.     

Porous silicon layer for optical sensing of organic vapor

The objective of this study is to evaluate the feasibility of porous silicon (PS) layer as a vapor sensor. We prepared three types of PS layer samples - a single layer, distributed Bragg reflector (DBR) layer, and microcavity layer - and examined their reflectance spectra before, during, and after exposure to different concentrations of various organic vapors. When the PS layer samples were exposed to the organic vapors, their reflectance spectra promptly shifted toward longer wavelengths. We determined that this redshift in the reflectance spectra could be attributed to the changes in the refractive index induced by the capillary condensation of organic vapors in the pores of the PS layers. The PS layers showed excellent sensing ability under different concentrations and types of organic vapors. Once the organic vapors were removed, the reflectance spectra of the PS layer samples promptly returned to their original states. In this study, we successfully demonstrated the rapid, sensitive, and reversible sensing of organic vapors using different PS layers.     

Localized surface plasmon resonance of silicon compounds adsorbed on silver nanoparticles

A simple method to produce silver nanoparticles on a glass surface from silver nanolayer deposited by magnetron sputtering and thermal annealed is presented. Localized surface plasmon resonance of nanoparticles shows a red shift depending on the silver nanolayer thickness, the refractive index and the thickness of an ultra-thin silicon compound adsorbed on the surface. A highly enhanced Raman spectrum of the characteristic groups of a silicon compound adsorbed on the nanoparticles surface was obtained.     

Realisation of a humidity sensor based on perfect metamaterial absorber

In this paper, we have proposed and investigated a humidity sensor based on perfect metamaterial absorber. The sensor is composed of three layers, which are metallic particle array on the top, porous silicon in the middle layer and metallic film at the bottom. According to the effective medium approximation, the effective permittivity of porous silicon is mainly determined by the filling fraction of water condensation. It is shown that the resonant wavelength displays significant red-shift with the increasing effective permittivity of porous silicon. Furthermore, the simulation results indicate that the refractive index sensitivity of absorber is high to 249 nm/RIU, which makes our structure be an ideal candidate for evaluating the humidity of environment.