Molecular Dynamics Investigation of Differences in Melting Behaviors of Cu57 and Cu58 Clusters

应用基于嵌入原子方法的分子动力学计算研究了Cu57和Cu58团簇在升温过程中变为熔体的结构演化过程．两个团簇在熔化时表现出不同的结构变化行为,进而影响到它们能量变化的差异．在升温时,团簇不同区域的原子局域结构变化由原子密度分布函数确定．模拟表明,即使对于这两个仅相差一个原子的小尺寸团簇,结构变化也敏感于团簇的尺寸．     

KBn（n=1～10）团簇的结构和性质的密度泛函理论研究北大核心CSCD

应用密度泛函理论（DFT）B3LYP方法在6-311＋G（d）水平上计算并分析了KBn（n=1～10）团簇的几何结构及电子性质和极化率．通过研究团簇的平均结合能、能级间隙、二阶能量差分分析了团簇的稳定性规律,研究表明：KBn（n=1～10）团簇基态多数为立体构型,能级间隙和二阶能量差分结果表明KB3 与KB9是幻数团簇．对团簇基态的极化率研究表明KB。团簇的电子结构随B原子的增加趋于紧凑,基本形成了一定的堆积方式．静态第一超极化率研究表明K战与KB4两种平面构型的团簇具有较好的非线性光学性能。     

Nb2Sin-(n=1-6) 团簇的几何构型、电子性质和磁性的理论研究

运用密度泛函方法在(U)B3LYP/LanL2DZ水平上研究了 (n=1～6)团簇的几何结构和电子性质．结果发现 (n=1～6)团簇只是在相应的Nb2Sin团簇的结构基础上发生了微小畸变．其中 团簇结构变化较为严重．对平均束缚能和分裂能的研究发现, 团簇的平均束缚能和分裂能均明显高于相应的Nb2Sin团簇,表明增加一个电子可以提高Nb2Sin(n=1～6)团簇的稳定性．通过对最低能构型的分裂能的研究发现, 团簇和Nb2Si3团簇分别是 和Nb2Sin(n=1～6)团簇中所有最低能构型中最稳定的．对电荷自然布局的研究发现,在 团簇中出现了电子反转．而对于Nb2Sin(n=1～6)团簇,当n=4～6时出现电子反转现象, n=1～2时电子转移符合常规． 对HOMO-LUMO能隙的研究结果表明,除了n=1,6外,其余 (n=2～5)团簇最低能结构的HOMO-LUMO 能隙均小于相应的Nb2Sin团簇,说明在这些团簇中增加一个电子增强了团簇的化学活性,但是当n=1、6时增加一个电子,该团簇的化学活性反而降低了．对于 (n=1～6)团簇来讲, 和 团簇分别成为 (n=1～6)团簇中化学稳定性最强和化学活性最强的．且 (n=1~6)团簇呈现半导体属性．对磁矩的研究结果表明, (n=1～6) 团簇的最低能结构的总磁矩均为1.00μB,两个Nb原子的局域磁矩方向,除了 团簇有一个铌原子与总磁矩相反外,其余均与总磁矩方向相同．说明各团簇中两个铌原子和硅原子对磁矩的贡献不同,方向也不完全相同．     

Fen、Nin(n=2～100)团簇基态结构与能量的模拟淬火算法研究

采用Gupta多体势结合分子动力学模拟退火及淬火方法、分别求解了Fen及Nin(n=2～100)团簇的最低能几何结构及能量. 结果表明：在所研究尺寸范围内除少数团簇的结构不同外,两类团簇具有相似的基态几何结构,在两类团簇结构演化中皆存在类Ih、类Oh、类D5h和Ih&D5h互嵌套类构型之间的竞争;分析团簇二阶差分能和剩余能表明两类团簇共同的幻数序列为：n=13、19、23、38及55,不同处为Ni26及Fe75 也分别为相应体系幻数团簇．对两类团簇分析其平均最近邻原子间距及平均配位数均可给出幻数成因．在所研究团簇尺寸范围内二者平均结合能均表现出随团簇尺寸增大而总体增大的普遍趋势,但Ni团簇的能量演化明显快于Fe团簇,这与实验观测镍团簇磁性演化明显快于铁团簇是完全一致的．     

Fen、Nin(n=2～100)团簇基态结构与能量的模拟淬火算法研究

采用Gupta多体势结合分子动力学模拟退火及淬火方法、分别求解了Fen及Nin(n=2～100)团簇的最低能几何结构及能量. 结果表明：在所研究尺寸范围内除少数团簇的结构不同外，两类团簇具有相似的基态几何结构，在两类团簇结构演化中皆存在类Ih、类Oh、类D5h和Ih&D5h互嵌套类构型之间的竞争；分析团簇二阶差分能和剩余能表明两类团簇共同的幻数序列为：n=13、19、23、38及55，不同处为Ni26及Fe75 也分别为相应体系幻数团簇．对两类团簇分析其平均最近邻原子间距及平均配位数均可给出幻数成因．在所研究团簇尺寸范围内二者平均结合能均表现出随团簇尺寸增大而总体增大的普遍趋势，但Ni团簇的能量演化明显快于Fe团簇，这与实验观测镍团簇磁性演化明显快于铁团簇是完全一致的．     

二维氧化锌纳米阵列的制备及光学吸收特性研究

采用漂移法,在玻璃衬底上制备出粒径分别为117,350和500 nm单层、大面积的聚苯乙烯胶体球掩膜板,在已制得的掩膜板上用射频磁控溅射的方法沉积一层氧化锌薄膜,最后用有机溶液四氢呋喃(THF)浸泡去除聚苯乙烯胶体球,获得不同粒径的二维氧化锌纳米团簇。通过扫描电子显微镜和能量色散X射线光谱仪对样品的形貌及成份进行表征,表明所制得样品为有序分布的蜂窝网状氧化锌纳米阵列。在室温下,通过吸收光谱仪测试样品在300～800 nm波长范围内的吸收光谱,结果表明对于具有不同尺寸晶粒的氧化锌纳米团簇样品,随着所采用的聚苯乙烯胶体球粒径的增大,即氧化锌纳米团簇粒径的增加,光吸收峰出现了宽化和红移;随着溅射时间的延长,即氧化锌薄膜膜厚的增加,光吸收率提高。此外,对氧化锌纳米团簇阵列的光吸收特性进行了基于离散偶极子近似的理论计算从而获得任意形状和尺寸粒子的吸收。目前,文献报道中用此理论计算各种形状的纳米金、银等金属的结果与实验结果相符,但是应用离散偶极子的近似理论计算氧化锌纳米颗粒的报道很少。应用此理论计算三角棱台形状的氧化锌光学吸收特性,根据氧化锌薄膜介电常数和膜厚的变化进行光吸收特性的模拟,并解释了实验结果。     

Nb2Sin+ ( n = 1～6)团簇的密度泛函理论研究

运用密度泛函方法在在(U)B3LYP/LanL2DZ水平上研究了Nb2Sin+(n=1～6)团簇的几何结构和电子性质．结果发现最低能Nb2Sin+团簇除了n=5,6发生了微小畸变外,其余基本保持了相应的中性Nb2Sin[(n=1～6)]团簇的结构．且除了Nb2Si+团簇外,所有的最低能结构都是自旋二重态,电子态也都为2A;由原子平均束缚能和分裂能可知,Nb2Sin+团簇的热力学稳定性比相应的Nb2Sin团簇[(n=1～6)]强,说明失去一个电子增加了团簇的热力学稳定性.且Nb2Si3+团簇的热力学稳定性是Nb2Sin+(n=1～6)团簇中最强的．从绝热电离势(AIP)和垂直电离势(VIP)的结果发现,由于VIP与AIP差值很小,说明 Nb2Sin+团簇和Nb2Sin 团簇[(n=1～6)]结构的构型相同.Nb2Si团簇的AIP值具有最小值6.623eV,表明在实验上很容易得到它们的阳离子形式且在质谱中可观测到较高的峰值．对HOMO-LUMO能隙的研究表明与相应的Nb2Sin(n=1～6)团簇相比,Nb2Sin+(n=1～6)团簇的HOMO-LUMO能级除了n=2,6外普遍增大,说明Nb2Sin+团簇的化学稳定性强于Nb2Sin团簇[(n=1～6)],并且除了Nb2Si3+团簇外都是半导体性的．由Mulliken电荷布局得出团簇的总磁矩和原子局域磁矩,表明Nb2Si+团簇的总磁矩最大,为3.0μB,呈现为铁磁质．硅原子则在不同的团簇中表现为顺磁性或抗磁性．     

KBn(n=1~10)团簇的结构和性质的密度泛函理论研究

应用密度泛函理论(DFT) B3LYP方法在6-311+G(d)水平上计算并分析了KBn(n=1~10)团簇的几何结构及电子性质和极化率.通过研究团簇的平均结合能、能级间隙、二阶能量差分分析了团簇的稳定性规律,研究表明: KBn(n=1~10)团簇基态多数为立体构型,能级间隙和二阶能量差分结果表明KB3与KB9是幻数团簇.对团簇基态的极化率研究表明KBn团簇的电子结构随B原子的增加趋于紧凑,基本形成了一定的堆积方式.静态第一超极化率研究表明KB8与KB4两种平面构型的团簇具有较好的非线性光学性能.     

碳掺杂铝团簇AlnC（n=6、7）的电子结构与稳定性

摘要 利用从头计算方法优化了Al6C和Al7C的稳定结构,分析了掺入C原子对铝团簇的稳定性及电子结构的影响．计算表明Al6C存在多个能量相近的异构体．在铝团簇中掺入碳原子后C─Al之间形成很强的键,碳原子处在团簇中间并使团簇的稳定性有很大的增加．电子结构的分析表明铝团簇中掺入碳后C的2p和Al的3s轨道形成很好的重叠,并且Al的3p电子转移到C原子使C的2p轨道完全占据．无论是纯的或掺碳的铝团簇,最高的占据轨道均由Al的3p轨道组成,能级位置变化不大．     

ConCu（38-n）（n=0-38）团簇基态结构和熔化行为北大核心CSCD

基于半经验的Gupta多体势采用遗传算法和分子动力学方法并结合模拟淬火技术,系统研究了ConCu（38-n）（n=0-38）团簇的基态结构与熔化行为．结果表明：除Co7Cu31团簇基态为类IA结构外,其它ConCu（38-n）混合团簇的基态结构均是在单质Cuss（Co38）的Oh基态结构基础上的畸变;对于混合团簇的基态结构,随Co原子增加均表现出Co原子先占中心后占表面的特征;通过分析基态团簇二阶差分能和混合能表明Co7Cu31和Co14Cu24为幻数结构团簇;ConCu（38-n）混合团簇在熔化过程中均表现出热容曲线无明显宽峰的异常熔化行为;通过对团簇原子等价指数和淬火结构势能分布图对团簇异常熔化行为进行了分析表征,指出在团簇熔化过程中两种动力学稳定结构（类Oh结构与类IA结构）之间的相互竞争对团簇熔化行为的重要影响．     

CdS/ZnO纳米复合结构制备及荧光特性研究

为增强CdS纳米粒子的荧光强度,以及稳定性,研究了Cd,S不同质量比,有无稳定剂等条件下CdS纳米粒子的制备及荧光特性。在碱性条件下,利用水热法合成了CdS/ZnO的纳米复合结构,并对所有样品进行了XRD、荧光光谱和SEM表征。测试结果表明所制备的CdS纳米粒子和CdS/ZnO的纳米复合结构粒子成分单一且纯净;ZnO复合在CdS表面;在紫外光(328.5 nm)激发下,CdS/ZnO纳米复合结构的发射峰位于463 nm处,峰形窄而对称,CdS/ZnO纳米复合结构的荧光强度比CdS纳米粒子的荧光强度有显著增强,且CdS和ZnO物质量之比为1∶1条件下,荧光强度最高,其荧光效率比单一CdS纳米粒子高出11%。通过第一性原理计算结果表明,CdS能带结构中,Cd-4d,S-3p和Cd-5s能带分别由5条、3条和1条能级构成,对比不同轨道的分态密度强度,看出CdS的导带边主要由Cd-5s轨道贡献,而价带边主要由S-3p轨道贡献,能量在-7 eV附近的电子态主要由Cd-4d轨道贡献。而ZnO上价带主要由O-2p电子构成,靠近费米能级的价带区域则主要由Zn-3d电子贡献,在导带部分,主要来源于Zn-4s和O-2p电子。由于在两种材料的复合结构中Zn-3d电子的能级和S-3p电子的能级接近,存在着二型带阶结构使能带变窄,容易形成跃迁,减小电子-空穴的复合,从而促进复合结构荧光效率的提高。     

Green photoluminescence from highly oriented ZnO thin film for photovoltaic application

We report here the fabrication of ZnO nanoparticles embedded on glass substrate by sol–gel and spin coating technique. Transmission electron microscope images revealed that the thin film is composed of ZnO nanoparticles. X-ray diffraction data confirms that the fabricated ZnO nanoparticles have hexagonal unit cell structure. The ZnO nanocrystals of the thin film are oriented along the c-axis of the hexagonal unit cell. UV–vis absorption spectroscopy shows that the absorption occurring at 373 nm in the ZnO thin film. The band gap was calculated from the absorption data and found to be 3.76 eV. This band gap enhancement occurs due to size effect in the nanoscale regime. Room temperature photoluminescence spectrum shows strong green emission at 530 nm owing to the singly ionized oxygen vacancy. This green emission was further investigated by annealing the thin film at different temperature. This singular green emission will be very useful in optoelectronic and nanophotonic devices.     

Structural,morphological, optical and antibacterial activity of rod-shaped zinc oxide and manganese-doped zinc oxide nanoparticles

Pure ZnO and Mn-doped ZnO nanoparticles were synthesized by Co-precipitate method. The structural characterizations of the nanoparticles were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. UV–Vis, FTIR and photoluminescence (PL) spectroscopy were used for analysing the optical properties of the nanoparticles. XRD results revealed the formation of ZnO and Mn-doped ZnO nanoparticles with wurtzite crystal structure having average crystalline size of 39 and 20 nm. From UV–Vis studies, the optical band-gap energy of 3.20 and 3.25 eV was obtained for ZnO and Mn-doped ZnO nanoparticles, respectively. FTIR spectra confirm the presence of ZnO and Mn-doped ZnO nanoparticles. Photoluminescence analysis of all samples showed four main emission bands: a strong UV emission band, a weak blue band, a weak blue–green band and a weak green band indicating their high structural and optical qualities. The antibacterial efficiency of ZnO and Mn-doped ZnO nanoparticles were studied using disc diffusion method. The Mn-doped ZnO nanoparticles show better antibacterial activity when higher doping level is 10 at% and has longer duration of time.     

Synthesis and characterization of Mg-doped ZnO hollow spheres

Mg-doped ZnO nanoparticles were synthesized by a simple chemical method at low temperature with Mg:Zn atomic ratio from 0 to 7%. The synthesis process is based on the hydrolysis of zinc acetate dihydrate and magnesium acetate tetrahydrate were heated under refluxing at 65 °C using methanol as a solvent. X-ray diffraction analysis reveals that the Mg-doped ZnO crystallizes in a wurtzite structure with crystal size of 5–12 nm. These nanocrystals self-aggregated themselves into hollow spheres of size of 800–1100 nm. High resolution transmission electron microscopy images show that each sphere is made up of numerous nanoparticles of average diameter 5–11 nm. The XRD patterns, SEM and TEM micrographs of doping of Mg in ZnO confirmed the formation of hollow spheres indicating that the Mg²⁺ is successfully substituted into the ZnO host structure of the Zn²⁺ site. Furthermore, the UV–Vis spectra and photoluminescence (PL) spectra of the ZnO nanoparticles were also investigated. The band gap of the nanoparticles can be tuned in the range of 3.36–3.55 eV by the use of the dopants.     

Density functional investigation of structural, electronic and optical properties of Ge-doped ZnO

Recent experiments reported fascinating phenomenon of photoluminescence (PL) blueshift in Ge-doped ZnO. To understand it, we examined the structural, electronic and optical properties of Ge-doped ZnO (ZnO:Ge) systematically by means of density functional theory calculations. Our results show that Ge atoms tend to cluster in heavily doped ZnO. Ge clusters can limit the conductivity of doped ZnO but reinforce the near-band-edge emission. The substitutional Ge for Zn leads to Fermi level pinning in the conduction band, which indicates Ge-doped ZnO is of n-type conductivity character. It is found that the delocalized Ge 4s states hybridize with conduction band bottom, and is dominant in the region near the Fermi level, suggesting that Ge-4s states provides major free carriers in ZnO:Ge crystal. The observed blueshift of PL in Ge-doped ZnO originates from the electron transition energy from the valence band to the empty levels above Fermi level larger than the gap of undoped ZnO. The electron transition between the gap states induced by oxygen vacancy and conduction band minimum may be the origin of the new PL peak at 590 nm.     

Synthesis and characterization of Mn<Superscript>2+</Superscript>-doped ZnS nanoparticles

Mn²⁺-doped ZnS nanoparticles were prepared by chemical arrested precipitation method. The samples were heated at 300, 500, 700 and 900°C. The average particle size was determined from the X-ray line broadening. Samples were characterized by XRD, FTIR and UV. The composition was verified by EDAX spectrum. The hexagonal structure of the sample was identified. The size of the particles increased as the annealing temperature was increased. The crystallite size varied from 5 nm to 34 nm as the calcination temperature increased. At around 700°C, ZnS is converted into ZnO phase due to oxidation. The emission peak of the sample is observed at 300 nm resulting in blue emission. The solid state theory based on the delocalized electron and hole within the confined volume can explain the blue-shifted optical absorption spectra. UV-VIS spectro-photometric measurement shows an indirect allowed band gap of 3.65 eV.      

A study on the optical and electrical properties of direct-patternable ZnO films incorporated various contents of Pt nanoparticles

Platinum nanoparticles were synthesized by the methanol reduction method, and their size was controlled to 3 nm on average using PVP [poly(N-vinyl-2-pyrrolidon)] as a protecting unit. Various contents of Pt nanoparticles were incorporated into ZnO solutions which were synthesized by a sol-gel process. ZnO films with Pt nanoparticles of various content were annealed at 500 °C and 600 °C for 1 h. The crystallinity increased with the annealing temperature and also slightly with the content of Pt nanoparticles. The sheet resistance of ZnO films decreased with the incorporation of Pt nanoparticles, however the decreasing behavior was not maintained with increasing content of Pt nanoparticles. A shift of valence band maximum energy of ZnO film with Pt nanoparticles to higher energy was also observed due to electron transfer from Pt nanoparticles to ZnO film. The optical transmittance was 88 ± 2% in the visible region for all the ZnO films. Well-defined 60 μm wide direct-patterned ZnO films containing Pt nanoparticles of 0.5 atomic percent could be formed without using dry etching process.     

Multi-walled carbon nanotubes supported Cu-doped ZnO nanoparticles and their optical property

Multi-walled carbon nanotubes (MWNTs)/Cu-doped ZnO composite powders were prepared by co-precipitation method, and were characterized by X-ray diffraction, electron microscopy, fluorescence spectrum, and ultraviolet spectrum. Experimental results show that the MWNTs can be modified by Cu-doped ZnO nanoparticles with hexagonal wurtzite structure after annealed at 450?°C, and the nanoparticle size is about 15?nm. Two ultraviolet (UV) peaks and a green band centered at about 510?nm are observed in the fluorescence spectrum of MWNTs/Cu-doped ZnO composite powder annealed at 450?°C. Furthermore, MWNTs and Cu doping significantly improve the UV absorption ability of ZnO.     

离子注入Zn的Si(001)基片热氧化制备纳米ZnO团簇及其生长行为研究

采用离子注入技术将Zn离子注入Si（001）基片,并在大气环境下加热氧化制备了ZnO纳米团簇.利用电子探针、薄膜X射线衍射仪、原子力显微镜和透射电子显微镜,对注入和热氧化后的薄膜成分、表面形貌和微观结构进行表征,探讨了热氧化温度以及注入剂量对纳米ZnO团簇的成核过程及生长行为的影响.结果表明,Zn离子注入到Si基片表面后形成了Zn纳米团簇,热氧化过程中Zn离子向表面扩散,在表面SiO₂非晶层和Si基片多晶区的界面处形成纳米团簇.热氧化温度是影响ZnO纳米团簇结晶质量的一个重要参数.随着热氧化温度的升高,金属Zn的衍射峰强度逐渐变弱并消失,而ZnO的（101）衍射峰强度逐渐增强.当热氧化温度高于800 ℃以后,ZnO与SiO₂之间开始发生化学反应形成Zn₂SiO₄. 关键词： ZnO纳米团簇 离子注入 微观结构 形貌分析     

液相激光烧蚀合成ZnO及Zn/ZnO纳米颗粒及其光致发光性能

利用532 nm脉冲激光对沉浸在去离子水及十二烷基硫酸钠(SDS)水溶液中的金属锌靶进行液相激光烧蚀,合成了ZnO纳米颗粒和Zn/ZnO核壳结构的纳米粒子. 应用X射线衍射仪,透射电子显微镜,紫外可见光分光光度计和荧光光度计表征产物的微观结构和光学性能,并探讨其形成机理. 结果表明:在去离子水中分别烧蚀2 h和4 h生成的ZnO纳米粒子的平均粒径分别为43 nm和19 nm. 激光的长时间作用可以使纳米粒子粒径减小. 在0.005 mol/L的SDS水溶液中合成了Zn/ZnO核壳结构的纳米粒子,这是由于S 关键词： 脉冲激光烧蚀 ZnO纳米粒子 核壳结构 光致发光