蒙特卡罗方法在径迹显微技术中的应用

径迹显微技术(PTA)是研究硼的晶界偏聚的行之有效的方法.本文运用蒙特卡罗方法建立了径迹固体探测器上蚀坑带宽度与晶界区域硼富集带实际宽度之间的对应关系.模拟计算结果表明,蚀坑带宽度受实际富集带宽度和晶界平面与磨面夹角2个因素影响.蚀坑带宽度随晶界硼富集带宽度的增加与晶界面与探测器平面夹角的减小而增加,利用本文程序计算结果,可根据蚀坑带宽度和晶界平面与磨面夹角更准确的获得实际富集带宽度.     

BESⅢ主漂移室径迹的外推和径迹匹配

BESⅢ主漂移室重建径迹的外推算法采用面向对象的设计方法, 利用GEANT4部分代码开发实现, 它提供主漂移室带电径迹外推到外部其他子探测器上的预期径迹信息. 该算法的外推过程考虑了带电径迹在磁场中的偏转以及与探测器物质相互作用造成的电离能损, 并为径迹参数计算考虑了库仑多次散射效应影响在内的参数误差矩阵. 经检查, 主漂移室径迹的外推结果和完全模拟结果一致, 并且径迹外推的结果能够成功用于各个子探测器测量径迹间的匹配, 这些工作为分析实验数据作了必要的准备, 能够满足BESⅢ实验的使用要求.     

L3中心径迹室顶点位置分辨的改进

运用两种方法对L3中心任迹漂移室的顶点位置分辨进行了改进,一种是利用高能量分辨的电子和高动量分辨的μ子测量,限定轻子径迹的曲率半径,对径迹进行重新拟合;另一种是对中心径迹室每半边单元的径迹零位置位移进行校正.结合两种改进方法将轻子的顶点位置分辨由原来的137μm提高到60μm.     

北京谱仪中性径迹测量误差的确定

首先检查了北京谱仪(BES)桶部簇射计数器(BSC)对γ光子电磁簇射形成的中性径迹的沉积能量和空间位置的测量值;然后,利用辐射Bhabha事例修正了BSC的沉积能量及其误差δE;利用e⁺e^－→γγ(γ)过程确定了BSC测量中性径迹的空间位置的误差,这些研究结果可以减小用运动学拟合方法分析包含中性径迹的物理事例的系统误差,提高BES的测量精度.     

利用CR39上的径迹鉴别激光加速离子产物

分别利用单能的质子束及碳离子束辐照CR39,并制定了规范的刻蚀条件及流程。通过对处理完成后的数据进行详细处理,得到了质子及碳离子的径迹直径-能量的响应曲线,可用于确定CR39上质子或碳离子的能量。以此为依据,得到了鉴别CR39上质子及碳离子的有效方法。在激光加速离子的实验中,通过测量CR39上的径迹大小及相对灰度,利用本文给出的标定数据,确认了质子径迹,得到了实验的质子能谱。     

重掺硼快速退火分子束外延硅的X射线衍射研究

利用X射线双晶衍射,测量了经过800—1100℃快速退火处理的重掺硼的分子束外延硅中的应变情况,发现应变部分弛豫.并得出外延层与衬底硅的晶格失配与替位硼浓度(7.5×10~(29)—3.1×10~(20)cm~(-3)成正比,比例系数β为5.1.在此测量基础上,提出硼团簇的形成与分解是外延展晶格质量与电学性质变化的主要原因.     

北京谱仪Ⅱ顶点探测器径迹重建软件的研究

解决了北京谱仪Ⅱ顶点探测器径迹重建软件系统——VCJULI从HP-Unix平台到PC-Linux平台移植中“字典存放”和精度处理的问题,从而使两平台上的候选径迹差别从74%降至0.02%;径迹参数中一些量的差别从5%下降至0.5%左右.大大改善了寻迹质量并节省了CPU时间     

扩散型云雾室的制作及使用示例

C.T.R.威尔逊制作的膨胀型云雾室是世界上最早的带电粒子径迹探测器之一,但其具有灵敏时间短、不能连续工作的缺陷.而扩散型云雾室可以连续工作,它通过热端将酒精加热转化为蒸气,酒精蒸气扩散到冷端后冷却形成过饱和蒸气,从而使得通过过饱和蒸气的带电粒子径迹可以在强光照射下被观察到.本工作根据其工作原理设计并制作了扩散型云雾室,在云室内部无放射源的情况下观察到了质子、β射线和宇宙射线的径迹;在放置一般烟雾报警器的~(241)Amα放射源的情况下,观察到了α粒子径迹.根据拍摄到的视频以及测量的几何数据,估计了该~(241)Am放射源的放射性活度.     

铀电镀片的制作及初步定量测试

采用固体径迹火花自动计数器测量弱中子场下狭小空间内的中子。固体径迹火花自动计数器用贫化铀和浓缩铀电镀片作为转换靶，采用电镀法制备浓缩铀镀片和贫化铀镀片。     

固体径迹探测器在科学技术中的应用

一、引 言 固体径迹探测器是六十年代初发展起来的一种原子核径迹探测器,使用的材料是各种绝缘固体如云母、矿物、玻璃和塑料(聚碳酸醋、硝酸纤维、醋酸纤维等),可探测的粒子为各种重带电粒子如质子、a粒子、重离子和裂变碎片等.当具有一定能量的重带电粒子射入固体径迹探测器中时,在它们经过的路径上产生直线形辐射损伤径迹,径迹直径约几十埃.当把带有这种辐射损伤径迹的材料放入强酸或强碱溶液中时,重带电粒子径迹由于优先蚀刻作用而被显影和放大.蚀刻前的辐射损伤径迹可用电子显微镜观察,蚀刻后的径迹用光学显微镜就可看到.固体径迹探测…     

The Evaluating of Autoradiographs by Means of the Film Agfacontour Professional

A simple method for equidensitometric evaluation of the model by using the film Agfacontour Professional is described. Best results are obtained, if a series of equidensities is made and if particular equidensities are different in colour. An example of evaluation of an autoradiograph is mentioned.     

高温高压下立方氮化硼和六方氮化硼的结构、力学、热力学、电学以及光学性质的第一性原理研究

本文采用基于密度泛函理论的第一性原理平面波赝势和局域密度近似方法,优化了立方和六方氮化硼的几何结构,系统地研究了零温高压下立方和六方氮化硼的几何结构、力学、电学以及光学性质.结构与力学性质研究表明:立方氮化硼的结构更加稳定,两种结构的氮化硼均表现出一定的脆性,而六方氮化硼的热稳定性则相对较差;电学性质研究表明:立方氮化硼和六方氮化硼均为间接带隙半导体,且立方氮化硼比六方氮化硼局域性更强;光学性质结果显示:立方氮化硼和六方氮化硼对入射光的通过性都很好,在高能区立方氮化硼对入射光的表现更加敏感.此外,还研究了高温高压下立方氮化硼的热力学性质,并得到其热膨胀系数、热容、德拜温度和格林艾森系数随温度和压力的变化关系.本文的理论研究阐述了高压下立方氮化硼和六方氮化硼的相关性质,为今后的实验研究提供了比较可靠的理论依据.     

碳化硼、磷化硼与砷化硼的结构计算与热电性能研究

应用离散变分X_α量子化学分子轨道计算方法,研究了碳化硼、磷化硼和砷化硼在组成、结构、化学键和热电性能之间的关系,讨论了三种材料的同异之处。磷化硼和砷化硼虽然具有和碳化硼类似的结构,但是由于它们的P-P或As-As二原子链无双链特征,难以进行电子的传递;碳化硼的C-B-C或C-B-B三原子链上的键具有双键特征,有利于电子的传递及极化子的跃迁。因此,磷化硼和砷化硼无双键结构应该是其热电转换性能很差,以至被排除在热电材料之外的主要原因;而碳化硼的热电转换性能远优于磷化硼和砷化硼,具有双键特征应该是其主要原因。     

Boron and indium substitution in GaAs(0 0 1) surfaces: Density-functional supercell calculations of the surface stability

Using the density-functional method and surface supercells the surface formation energies are calculated for the most stable GaAs(0 0 1) surface reconstructions without and with up to four indium or/and boron substitutions. Optimal conditions for the growth of the alloys are derived from calculated surface stability diagrams. The incorporation of indium into GaAs without phase separation is possible under strong As-rich conditions and medium to In-rich conditions. Less As-rich conditions can lead to the formation of an InAs phase. Ga-rich conditions give an InGa phase. Isovalent boron incorporation into GaAs without phase separation is possible under strong arsenic and reduced boron exposure. A BAs phase can be formed under more B-rich conditions. More Ga-rich conditions lead to the boron substitution in arsenic positions. The formed boron dimers can be a starting point for the formation of a boron phase. A true antisite boron substitution is less probable. Using the suitable growth conditions obtained for the ternary alloys it is energetically more favourable to incorporate both indium and boron (formation of BInGaAs) than to incorporate only one of the two elements (In or B). The antisite boron incorporation is not favoured in combination with isovalent boron or indium.     

Effect of plasma on combustion characteristics of boron

As it is very difficult to release boron energy completely, kinetic mechanism of boron is not clear, which leads to the lack of theoretical guidance for studying how to accelerate boron combustion. A new semi-empirical boron combustion model is built on the King combustion model, which contains a chemical reaction path; two new methods of plasma-assisted boron combustion based on kinetic and thermal effects respectively are built on the ZDPLASKIN zero-dimensional plasma model. A plasma-supporting system is constructed based on the planar flame, discharge characteristics and the spectral characteristics of plasma and boron combustion are analyzed. The results show that discharge power does not change the sorts of excited-particles, but which can change the concentration of excited-particles. Under this experimental condition,plasma kinetic effect will become the strongest at the discharge power of 40 W; when the discharge power is less than 40 W,plasma mainly has kinetic effect, otherwise plasma has thermal effect. Numerical simulation result based on plasma kinetic effect is consistent with the experimental result at the discharge power of 40 W, and boron ignition delay time is shortened by 53.8% at the discharge power of 40 W, which indicates that plasma accelerates boron combustion has reaction kinetic paths, while the ability to accelerate boron combustion based on thermal effect is limited.     

Densification of Crystalline Boron Carbide during Shock-Wave Loading

Crystalline powder boron carbide samples are subjected to explosive loading by 2-μs shock waves with an amplitude of 38 GPa and shock heating to 700 K and to subsequent conservation. The samples recovered after shock-wave loading are studied by X-ray diffraction, and new effects of shock-wave loading on boron carbide are revealed. The explosive treatment is shown to shift the X-ray diffraction reflections of initial boron carbide toward high angles, which is attributed to an increase in the boron carbide density at the level of atomic volume in the unit cell of boron carbide. The X-ray diffraction reflections are found to broaden, which is interpreted as an increase in the coherent scattering region in the crystalline boron carbide subjected to the explosive treatment.     

Electrical conductivity and equations of states of β-rhombohedral boron in the megabar dynamic pressure range

The pressure dependence of the conductivity of boron under conditions of a stepwise shock compression of megabaric range is studied. With this purpose, the following problems have been solved. The conductivity of boron has been measured in the range of dynamic pressures, where boron has different high-pressure phases. The equations of state of β-rhombohedral and amorphous boron have been constructed in a megabaric pressure range. The thermodynamic states of boron in the conditions of these experiments are calculated, which, in combination with the measurement data, made it possible to determine the change in the boron conductivity in the conditions of strong stepwise shock compression at dynamic pressures to 110 GPa. The increase in the conductivity of polycrystalline boron at megabar pressures is interpreted as a result of a nonmetal–metal transition.

     

Magnetron sputtering synthesis of large area well-ordered boron nanowire arrays

The elemental boron and boron-rich compounds constitute a fascinating class of materials because of their vast variety of unique structures, extraordinary three-center electron-deficient bonds, and fascinating properties[1—4]. In general, they have an inverted molecular-like structure, which is characterized by three-dimensional skeletons of B12 icosahedra or icosahedral fragments. Furthermore, these B12 icosahedra are linked together by two-center covalent bonds, which lead to the intra-clus…     

石盐中硼含量及其同位素的准确测定

基于Cs₂BO+₂的正热电离质谱法测定样品中硼同位素时,硼含量的准确测定直接制约着硼同位素测定的成败。目前,使用电感耦合等离子体原子发射光谱仪(ICP-OES)测定高盐样品的硼含量仍然存在很大问题,主要体现在两个方面： 高盐的基体干扰和仪器检出限制约,而仅仅依靠简单的稀释无法很好的解决这些困难。因此对样品进行硼元素的预富集以及基体离子的去除是十分必要的。在使用硼特效树脂进行硼元素的吸附时发现部分钠离子也会被同时吸附,故采用3 mol·L-1的氨水可以洗脱大部分吸附的钠离子而不造成硼的损失,达到了去除基体的目的。随后使用10 mL 75 ℃的0.1 mol·L-1盐酸将硼特效树脂吸附的硼洗脱实现了样品中硼的富集。ICP-OES测定硼含量时,选择波长为208.900 nm,样品的加标回收率在106.00%～108.40%之间,检出限为0.006 mg·L-1,定量下限为0.02 mg·L-1。通过不同盐度下的12次重复实验,其相对标准偏差小于5%,在1.94%～3.37%之间,因此该方法是可行的,并不存在偶然误差。联合此方法和Cs₂BO+₂离子的正热电离质谱法,成功测定了8个地质石盐样品的硼含量及硼同位素组成。     

Energy landscape of fullerene materials: a comparison of boron to boron nitride and carbon

Using the minima hopping global geometry optimization method on the density functional potential energy surface we show that the energy landscape of boron clusters is glasslike. Larger boron clusters have many structures which are lower in energy than the cages. This is in contrast to carbon and boron nitride systems which can be clearly identified as structure seekers. The differences in the potential energy landscape explain why carbon and boron nitride systems are found in nature whereas pure boron fullerenes have not been found. We thus present a methodology which can make predictions on the feasibility of the synthesis of new nanostructures.