dc Josephson Effect in s-Wave Superconductor/Ferromagnet Insulator/p-Wave Superconductor Junctions

The Josephson currents in s-wave superconductor/ferromagnet insulator/p-wave superconductor（s/FI/p） junctions are calculated as a function of temperature and the phase taking into account the roughness scattering effect at interface. The phase dependence of the Josephson current I （φ） between s-wave and px-wave superconductor is predicted to be sin（2φ）. The ferromagnet scattering effect, the barrier strength, and the roughness strength at interface suppress the dc currents in s/FI/p junction.     

Spontaneous Josephson spin current in triplet superconductor/ferromagnet/triplet superconductor junctions

This paper theoretically studies Josephson spin current through triplet superconductor/ferromagnet/triplet superconductor junctions. At the ferromagnet/superconductor interfaces, the ferromagnetic scattering potential gives rise to coupling between the Andreev bound states and lifts their spin degeneracy. These spin-split Andreev states carry the Josephson spin current through the junctions. The generated spin supercurrent can be controlled by the magnetization of a ferromagnetic thin layer and bias voltage across the junctions.     

Josephson Current in f-Wave Superconductor/f-Wave Superconductor Junctions

We study the temperature T and the phase of the Josephson critical current I（Ф） by taking into account the roughness scattering effect at inerface in an f-wave superconductor （S）/Insulator layer （I）/f-wave superconductor （S） junction. It is found that the Josephson critical currents in f-wave Sir-wave S, the barrier strength and the roughness strength at inerface always suppress the Andreev reflection. When α=β, the phase dependence of the Josephson current I（Ф） between two f-wave S is predicted to be sin Ф; particularly, when a α≠ β, the phase dependence of the Josephson current I（Ф） between two f-wave superconductors is not predicted to be sin Ф and with the barrier strength increasing, the period of the I（Ф） turns decrease.     

Coherence effects in S/I/N/I/FS tunnel junctions

The dc Josephson effect in superconductor / insulator / normal metal / insulator/ferromagnetic superconductor junctions has been studied. We calculate the de Josephson current based on the Bogoliubov de Gennes equation. The Josephson current is derived as a function of exchange field in ferromagnetic superconductor, normal metal thickness and insulating barrier strength. It is found that there exists an oscillation relation between the critical Josephson current and the normal metal thickness. The oscillation amplitude decreases as the thickness of the normal metal increases or the exchange field augments.[第一段]     

Switching effects in superconductor/ferromagnet/superconductor graphene junctions

The Josephson effect in the superconductor/ferromagnet/superconductor （SFS） graphene Josephson junction is studied using the Dirac Bogoliubov-de Gennes （DBdG） formalism. It is shown that the SFS graphene junction drives 0–π transition with the increasing of p=h0L/vF？, which captures the effects of both the exchange field and the length of the junction; the spin-down current is dominant. The 0 state is stable for p 〈 pc （critical value pc ≈ 0.80） and the π state is stable for p 〉 pc, where the free energy minima are at φg=0 and φg=π, respectively. The coexistence of the 0 and π states appears in the vicinity of pc.     

Josephson Effect in FS/I/N/I/FS Tunnel Junctions

The Bogoliubov de Gennes equation is applied to the study of coherence effects in the ferromagnetic superconductor/insulator/normal metal/insulator/ferromagnetic/superconductor （FS/I/N/I/FS） junction. We calculated the Josephson current in FS/I/N/I/FS as a function of exchange field in ferromagnetic superconductor, temperature, and normal metal thickness. It is found that the Josephson critical current in FS/I/N/I/FS exhibits oscillations as a function of the length of normal metal. The exchange field always suppresses the Josephson critical current Ip for a parallel configuration of the magnetic moments of two ferromagnetic superconductor （FS） electrodes. In the antiparallel configuration, the Josephson critical current IAv at the minimum values of oscillation increases with the exchange field for strong barrier strength and at low temperatures.     

Josephson current in an irradiated Weyl semimetal junction

The influence of the off-resonant circularly polarized light on the Josephson current in the time-reversal broken superconducting Weyl semimetal junctions is investigated by using the Bogoliubov–de Gennes equation and the transfer matrix approach. Both the zero momentum BCS pairing states and the finite momentum Fulde–Ferrell–Larkin–Ovchinnikov(FFLO) pairing states are considered for the Weyl superconductors. When a circularly polarized light is applied, it is shown that the current phase relation remains unchanged for the BCS pairing with the increasing of incident radiation intensity A_0. For FFLO pairing, the Josephson current exhibits the 0–π transition and periodic oscillation as a function of A_0. The dependence of free energy and critical current on A_0 are also investigated.     

Fabrication of high-quality submicron Nb/Al--AlOx/Nb tunnel junctions

Nb/Al-AlOx/Nb tunnel junctions are often used in the studies of macroscopic quantum phenomena and superconducting qubit applications of the Josephson devices. In this work, we describe a convenient and reliable process using electron beam lithography for the fabrication of high-quality, submicron-sized Nb/Al-AlOx/Nb Josephson junctions. The technique follows the well-known selective Nb etching process and produces high-quality junctions with Vm=100 mV at 2.3 K for the typical critical current density of 2.2 kA/cm^2, which can be adjusted by controlling the oxygen pressure and oxidation time during the formation of the tunnelling barrier. We present the results of the temperature dependence of the sub-gap current and in-plane magnetic-field dependence of the critical current, and compare them with the theoretical predictions.     

A trilayer process for the fabrication of Al phase qubits

Herein we develop an Al/AlOx/Al trilayer process,feasible to fabricate complex circuits with wiring crossovers,for the preparation of Al junctions and phase qubits.The AlOx layer is obtained by in situ thermal oxidation,which provides high-quality junction tunnel barriers.The Al junctions show a considerably low leakage current and the Josephson critical current density can be conveniently controlled in the range of a few to above 100 A/cm2,which is favorable in the phase qubit application.Macroscopic quantum tunneling,energy spectrum,energy relaxation time,Rabi oscillation,and Ramsey interference of the Al phase qubits are measured,demonstrating clearly quantum coherent dynamics with a timescale of 10 ns.Further improvements of the coherent dynamic properties of the device are discussed.     

Flux qubit with a large loop size and tunable Josephson junctions

We present the design of a superconducting flux qubit with a large loop inductance. The large loop inductance is desirable for coupling between qubits. The loop is configured into a gradiometer form that could reduce the interference from environmental magnetic noise. A combined Josephson junction, i.e., a DC-SQUID is used to replace the small Josephson junction in the usual 3-JJ (Josephaon junction) flux qubit, leading to a tunable energy gap by using an independent external flux line. We perform numerical calculations to investigate the dependence of the energy gap on qubit parameters such as junction capacitance, critical current, loop inductance, and the ratio of junction energy between small and large junctions in the flux qubit. We suggest a range of values for the parameters.     

Inductance of Long Intrinsic Josephson Junction Arrays Composed of Misaligned Tl2Ba2CaCu2O8 Thin Films

We observe and measure the inductance of long intrinsic Josephson junction arrays composed of misaligned Tl2Ba2CaCu2O8 thin films grown on LaAlO3 substrates. The array consists of about 9.1 × 10^3 intrinsic Josephson junctions, where 90° phase shift between ac voltage across the array and ac current flowing through has been measured. Furthermore, the voltage is proportional to the frequency of the current. The measured inductance values of the intrinsic Josephson junction arrays are basically consistent with the theoretically calculated results, confirming that the inductance is mainly due to the Josephson effect. The dependence of the array inductance on its critical current is also discussed.     

Control of spins in a nano-sized magnet using electric-current

With the development of spintronics,spin-transfer torque control of magnetic properties receives considerable attention.In this paper the Landau-Lifshitz-Gilbert equation including the torque term is used to investigate the magnetic moment dynamics in the free layer of the ferromagnet/non-magnetic/ferromagnet(FM1/N/FM2) structures.It is found that the reverse critical time τ_c decreases with the current increasing.The critical time τ_c as a function of current for the perpendicular and parallel easy magnetic axes are the same.The critical time τ_c increases with the damping factor α increasing.In the case of large current the influence of the damping factor α is smaller,but in the case of little torque the critical time τ_c increases greatly with the damping increasing.The direction of the magnetization in the fixed layer influences the critical time,when the angle between the magnetization and the z direction changes from 0.1π to 0.4π,the critical time τ_c decreases from 26.7 to 15.6.     

0-π transition induced by the barrier strength in spin superconductor Josephson junctions

The Andreev-like levels and the free energy of the spin superconductor/insulator/spin superconductor junction are obtained by using the Bogoliubov-de Gennes equation. The phase dependence of the spin supercurrents exhibits a 0-π transition by changing the barrier strength. The dependences of the critical current on the barrier strength and the temperature are also presented.     

Overdoped High Current Density Bi2-xPbxSr2CaCu2O8＋δ Intrinsic Josephson Junction Mesas and Their Switching Current Distributions

Small and thin mesa structures of intrinsic Josephson junctions 1- 2μm on a side and 1.5-7.5 nm in thickness are fabricated from single crystals of Bi2-xPbxSr2CaCu2O8＋δ with a nominal Pb content x from 0.2 to 0.5. The Josephson critical current density jc is found to be pronouncedly large, ranging from 10 to 50 kA/cm^2. Switching current probability measurements for these mesa samples show an indication of a crossover to the macroscopic quantum tunneling region.     

Anomalous Transport Characteristics of High Temperature Superconductors and Josephson Currents

The transport characteristics of high temperature superconductor current and Josephson current is investigated in the framework of the modified time-dependent Ginzburg-Landau model and the Lawrence-Doniach model.We evaluated the vortex equation and found that the signs of the high temperature superconductor current and the Josephson current can reverse.Some explicit expressions for different cases are derived.which accord with experimental data.     

Current-voltage characteristics simulation and analysis of 4H-SiC metal-semiconductor-metal ultraviolet photodetectors

The current-voltage (Ⅰ-Ⅴ) characteristics of 4H-SiC metal-semiconductor-metal (MSM) ultraviolet pho- todetector with different finger widths and spacings,different carrier concentrations and thicknesses of n-type epitaxial layer are simulated.The simulation results indicate that the dark current and the pho- tocurrent both increase when the finger width increases.But the effect of finger width on the dark current is more significant.On the other hand,the effect of finger spacing on the photocurrent is more significant. When the finger spacing increases,the photocurrent decreases and the dark current is almost changeless. In addition,it is found that the smaller the carrier concentration of n-type epitaxial layer is,the smaller the dark current and the larger the photocurrent will be.It is also found that I-V characteristics of MSM detector also depend on the epitaxial layer thickness.The dark current of detector is smaller and the photocurrent is larger when the epitaxial layer thickness is about 3μm.     

Anomalous Direct-Current Josephson Effect in Semiconductor Nanowire Junctions

We investigate the dc Josephson effect in one-dimensional junctions where a ring conductor is sandwiched between two semiconductor nanowires with proximity-induced superconductivity.Peculiar features of the Josephson effect arise due to the interplay of spin-orbit interaction and external Zeeman field.By tuning the Zeeman field orientation,the device can vary from 0 to π junction.More importantly,nonzero Josephson current is possible at zero phase difference across the junction.Although this anomalous Josephson current is not relevant to the topological phase transition,its magnitude can be significantly enhanced when the nanowires become topological superconductors where Majorana bound states emerge.Distinct modulation patterns are obtained for the semiconductor nanowires in the topologically trivial and non-trivial phases.These results are useful to probe the topological phase transition in semiconductor nanowire junctions via the dc Josephson effect.     

ANISOTROPY OF CRITICAL CURRENT DENSITY IN c-AXIS ORIENTED EPITAXIAL YBa2Cu3O7-δ FILMS

The dependence of critical current density J_c on the angle α between the directions of the applied magnetic field H (which was rotated in the c-axis-I plane) and the in-plane current I was measured on a c-axis oriented epitaxial YBa₂Cu₃O_7-δ films at 81 K, with the magnetic field strength up to 6T, Analysis of the experimental results on the basis of the classical scaling law of pinning force shows that there exist simultaneously planar-pinning and volume-pinning mechanisms, and the contribution of volume pinning increases wish decreasing while that of the planar pinning decreases, We propose that the decrease of Lorentz-force-independent critical current density with increasing H for H∥I results from the suppression of superconductivity by the magnetic field, The fact that the contribution of volume pinning increases with decreasing α also arises from the suppression of superconductivity in CuO₂ plane by the magnetic field.     

Cooper-Pair Number--Phase Quantization for Inductance Coupling Circuit Including Josephson Junctions

Based on the entangled state representation and a bosonic phase operator formalism, we tackle with Cooperpair number-phase quantization for the inductance coupling circuit including Josephson junctions, and then investigate how Josephson current equations change due to the presence of the coupling inductance and obtain bosonic operator Faraday formula, as well as the corresponding number-phase uncertainty relation.     

Study of Nb/Nb_xSi_(1-x)/Nb Josephson junction arrays

Owing to the adjustable characteristics and superior etching properties of co-sputtered Nbx Si1-x film, we are trying to fabricate Nb/Nbx Si1-x/Nb Josephson junction arrays for voltage standard. It is important to find the suitable Nbx Si1-x barrier for the junctions. Josephson junctions with different barrier content are fabricated. Current–voltage characteristics are measured and analyzed. It is demonstrated in this paper that critical current can be adjusted by using different barrier content and thickness. Shapiro steps of five hundred junctions in series are observed.