Characterization of defect type and dislocation density in double oxide heteroepitaxial CeO2/YSZ/Si(001) films

In order to qualitatively and quantitatively analyze the structural defects including the defect types and their concentrations in oxide heteroepitaxial films, a new X-ray rocking-curve width-fitting method was used in the case of doubleCeO₂/YSZ/Si (YSZ=yttria-stabilized ZrO₂) films that were prepared by pulsed laser deposition. Two main defect types, angular rotation and oriented curvature, were found in both CeO₂ and YSZ. Dislocation densities of CeO₂ and YSZ, which were obtained from the angular rotations, are functions of the YSZ thickness. A distinct two-step correlation between dislocation densities of CeO₂ and YSZ was found that as the dislocation density of YSZ is higher than 2.4×10¹¹ cm^-2, the dislocation density of CeO₂ shows a high sensitivity with that of YSZ compared with the low relativity in lower dislocation density (<2.4×10¹¹ cm^-2). In addition, YSZ always has higher dislocation densities and oriented curvatures than CeO₂ in each specimen, which can be attributed to the smaller mosaic domain sizes in YSZ than in CeO₂ as observed by high-resolution transmission electron microscopy. Received: 12 August 2002 / Accepted: 14 August 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +81-3/5734-3369, E-mail: chun_hua_chen@hotmail.com     

Meter-long CeO2/YSZ/Y2O3 buffer layers for YBCO coated conductors using DC reactive sputtering

This paper reports CeO₂/YSZ/Y₂O₃ buffer layers deposited on biaxially textured NiW substrates by DC reactive sputtering in a reel-to-reel system. The effect of partial pressure of water vapor (P_H2O) on surface morphology and orientation of the Y₂O₃ films was examined. The obtained CeO₂/YSZ/Y₂O₃ buffer layers exhibit a highly biaxial texture, with in- and out-of-plane FWHM values respectively in the range of 6.0–7.0° and 4.5–5.5°. Crystallographic consistency of CeO₂/YSZ/Y₂O₃ along meter length is excellent. Atomic force microscope observation (AFM) reveals a smooth, continuous and crack-free surface with a Root-mean-square roughness (RMS) lower than 10 nm.     

Texture analysis of RF-sputtered CeO2 buffer layers and superconducting MOD-YBCO films

CeO₂ buffer layers were deposited on YSZ single-crystal substrates using an RF-sputtering method. The development of crystalline textures of sputtered CeO₂ films at different sputtering pressure and their effects on YBCO films, deposited by Metal Organic Deposition (MOD), were investigated. Both CeO₂ and subsequent YBCO films grew well epitaxially. The relative XRD peak intensities of CeO₂ (2 0 0) to substrate YSZ (2 0 0) increased with deposition pressure in the range of 3–5 mTorr and were inversely proportional to the θ–2θ scan FWHM values of CeO₂ (2 0 0). Also, the reaction layers of BaCeO₃ were thicker in the samples with lower CeO₂ (2 0 0) intensities and poor out-of-plane alignment when CeO₂ were deposited at the lower pressure of 3.3 mTorr. It is noted, however, that the superconducting layer grew well epitaxially on these BaCeO₃ layers, possibly due to the epitaxial relation between CeO₂ and YBCO. The superconducting critical currents of MOD-YBCO films showed an increasing tendency as both the Δ2θ (CeO₂) and BaCeO₃ peak intensities decreased.     

Epitaxial growth of CeO2 on (100) InP using reactive r.f. magnetron sputtering

The epitaxial growth of CeO₂ thin films has been realized on (100) InP substrates using reactive r.f. magnetron sputtering. Oxide films were nucleated in the presence of molecular hydrogen (4% H₂/Ar sputtering gas) in order to reduce the native oxide formation on the InP surface, which interferes with CeO₂ epitaxy. A metal cerium target was used as the cation source, with water vapor serving as the oxidizing species. Epitaxial films were sputter-deposited at a substrate temperature of 550 °C in a H₂O vapor pressure of approximately 10^-3 Torr. Crystallinity of the oxide films was examined using θ–2θ X-ray diffraction, ω-rocking curves, and in-plane φ-scans. The best results were obtained when the initial nucleation layer was deposited with P(H₂O)<10^-5 Torr, followed by deposition at P(H₂O)=10^-3 Torr. The epitaxial growth of CeO₂ on InP could prove enabling in efforts to integrate functional oxides with InP-based optoelectronic and microwave technologies. Received: 20 February 20002 / Accepted: 21 February 2002 / Published online: 19 July 2002     

Electric field assisted annealing effects on microstructure and ionic conductivity in ceria/YSZ oxide heterostructures

The effect of electric field assisted annealing on the microstructure, composition and ionic conductivity properties in CeO₂/YSZ oxide heterostructures have been investigated using molecular dynamics simulations. Amorphization–recrystallization steps were performed with and without external electric field of strength 10?MV/cm along three different orientations: in-plane (YZ), normal (X) and 45° resultant (XY) with respect to the oxide heterointerfaces. The microstructural and compositional differences at the interfaces and in the interior of the oxide heterolayers were evaluated and were found to show a clear correlation with the orientations of the applied field. In particular, the XY configuration displayed a compressive lattice strain of ～9% along with a reduced oxygen vacancy concentration when compared to the others. Ionic density profiles suggest pronounced segregation (～60% higher compared to the average value in the interior) of yttrium ions closer to the YSZ/CeO₂ interface for the XY configuration. Other configurations exhibit minimal to no such variations. These microstructural differences are found to affect the number of mobile charge carriers and the activation barriers associated with ionic migration through the oxide lattice and consequently, influence the ionic conductivity.     

Anisotropic in-plane strain in W-doped (Ba,Sr)TiO<Subscript>3</Subscript> thin films deposited by pulsed-laser deposition on (001)MgO

The structural and the microwave dielectric properties of Ba_xSr_(1-x)TiO₃ films (BST) with x=0.5, 0.6 and 0.7, containing 1 mol % W have been investigated. The films were grown by pulsed-laser deposition on MgO (001) substrates at a temperature of 720 °C in an oxygen pressure from 3 to 500 mTorr. The film structures were determined by X-ray diffraction. The lattice parameters were fitted to a tetragonal distortion of a cubic lattice. The out-of-plane lattice parameter (c) was calculated from the position of the (004) reflection. Using c, the in-plane lattice parameter, a, was calculated from the position of the (024) and (224) reflections. A deviation in the calculated values for a, beyond the systematic error, was found in the in-plane lattice parameter, suggesting an in-plane orthorhombic distortion (a, a’). Films with x=0.7 showed a minimum in-plane distortion due to a better lattice match with the substrate. The ratio of the in-plane and out-of-plane lattice parameters was calculated as a measure of the lattice distortion (a/c and a’/c). The dielectric properties of the films deposited were measured at room temperature at 2 GHz using gap capacitors fabricated on top of the dielectric film. For all Ba/Sr ratios investigated in the W-doped material, the dielectric Q (1/cosδ) was observed to be insensitive to the oxygen deposition pressure. A peak in the change in the dielectric constant, as a function of an applied electric field (0–80 kV/cm), was observed for films deposited in 50 mTorr of oxygen. The largest K-factor, K=(ε(0)-ε(V )/ε(0)×Q(0)), for films deposited from a BST x=0.6 (1 mol % W-doped) target was observed in the film that had a minimum in-plane strain, where a∼a’ and c was greater than a and a’. Received: 4 July 2002 / Accepted: 5 July 2002 / Published online: 17 December 2002 RID="*" ID="*"Permanent address: Nuclear Research Center–Negev, P.O. Box 9001 Beer-Sheva, Israel RID="**" ID="**"Corresponding author. Fax: +1-202/767-5301, E-mail: horwitz@ccsalpha3.nrl.navy.mil     

Room-temperature epitaxial growth of CeO2(001) films on YSZ buffered Si(001) substrates

2 (001) epitaxial thin films deposited on Si(001) with yttria-stabilized zirconia buffers have been obtained for the first time at room temperature by pulsed-laser deposition. The influence of oxygen pressure on the crystal quality of CeO₂ was studied for the films deposited at 100 °C. The rocking curve full width at half maximum of the CeO₂(002) peak for films deposited at room temperature and 100 °C was between 1° and 2°, for oxygen pressures below 3×10^-2 mbar. The best crystal quality was obtained at around 3×10^-3 mbar. Epitaxial growth at room temperature was confirmed by cross-sectional transmission electron microscopy. Scanning electron microscopy and atomic force microscopy revealed very smooth surfaces for oxygen pressure below 3×10^-2 mbar, with rms roughness values around 0.3 nm over 5 μm×5 μm. Received: 25 September 1997/Accepted: 22 April 1998     

Intrinsic pinning and current percolation signatures in E-J characteristics of Si/YSZ/CeO2/YBCO layouts

In the context of superconducting electronics integrated with traditional silicon-based electronics we grew Si/YSZ/CeO₂/YBa₂Cu₃O_7-x architectures by means of the scalable magnetron sputtering growth technique. In this paper we report on structural, surface and electrical transport characterization of typical multilayers. We focus on the electrical transport characterization in the temperature range 18–30 K of c-axis YBa₂Cu₃O_7-x films grown on top of several (001) oriented buffered substrates. The electric field vs. current density (E-J) curves exhibit step-like behaviour in correspondence to the transition between the non-dissipative and the flux-flow regimes. This trend is accompanied by the signature of linearly correlated pinning. On the other hand, in the flux-flow regime clear signatures of weak-link behaviour and current percolation are exhibited. In this complex framework possible future applications are discussed.     

Reel-to-reel fabrication of meter-long YBCO coated conductor

YBa₂Cu₃O_7?δ (YBCO) superconductors were coated on the CeO₂/YSZ/Y₂O₃ buffered Ni-5at%W tapes by a reel-to-reel pulsed laser deposition (PLD). The process of a multi-layer deposition of YBCO film was explored. X-ray diffraction texture measurements showed good both in-plane and out of plane crystalline orientations in YBCO films. The average values calculated at a full width at half maximum (FWHM) of the peaks from phi-scans (φ) and omega (ω) scans for one meter-long YBCO tape were 7.49° and 4.71°, respectively. The critical current (I_c) was over 200 A/cm-width at 77 K and under self-field for meter-long YBCO tape. The critical transition temperature of the YBCO tape was typically as 90.1 K with 0.5 K transition widths.     

Lattice distortion and corresponding changes in optical properties of CeO2 nanoparticles on Nd doping

Doping of Nd distorts the lattice structure of CeO₂, increases the lattice strain and expands the lattice. Oxygen vacancies and other ceria related defects contribute to the lattice strain. Shifting and broadening of the F_2g Raman peak of doped sample, compared to pure CeO₂, is indicative of local structure distortion on doping. Dopant induced enhancement of oxygen vacancies, in the CeO₂ lattice, is further confirmed by the generation of a new Raman peak at 543 cm^?1 that is otherwise absent in the pure one. UV–vis spectroscopy gives an understanding of the different types of f–f electronic transition of Nd in the crystalline environment of CeO₂. Effective band gap of CeO₂ reduces upto Nd concentration of 2.5%. The band gap, however, increases at 4% of Nd due to Burstein–Moss shift. Photoluminescence intensity of pure CeO₂ decreases with Nd concentration owing to the increase in the number of non radiative oxygen vacancies. These vacancies act as luminescence quencher and reduce the emission intensity. Photoluminescence excitation spectra confirm the presence of these oxygen vacancies in the CeO₂ nanocrystallites.     

Epitaxial growth of yttria-stabilised zirconia buffer layers on X-cut LiNbO3 for superconducting electrodes

We report on the epitaxial growth of yttria-stabilised zirconia (YSZ) buffer layers on X-cut LiNbO₃ (LNO) single crystals by pulsed laser deposition. Despite the low chemical stability of the substrates at high temperature, high quality fully reproducible films were obtained over a relatively broad range of processing conditions. The films were (00h) out-of-plane single oriented and the in-plane edge of the YSZ unit cell was aligned with the polar axis of the LNO. However, the YSZ deposition also promoted the formation of the compound LiNb₃O₈. This compound is epitaxial and located at the interface. The homogeneous YSZ film presents a uniform surface, free of outgrowths and with a low roughness. These characteristics are suitable for the epitaxial growth of other oxides, as has been demonstrated with the preparation of YBa₂Cu₃O₇/CeO₂/YSZ/LNO heterostructures. The superconducting YBa₂Cu₃O₇ films were epitaxial, with the c axis perpendicular to the surface and single in-plane orientation, and presented good transport properties (critical temperatures around 86 K and critical current densities close to 10⁶ A/cm² at 77 K). Received: 5 April 2001 / Accepted: 30 July 2001 / Published online: 30 October 2001     

在金属基带上用激光脉冲沉积法制备帽子层CeO_2的研究

利用脉冲激光沉积法在带有Y2O3、YSZ隔离层的金属基带上制备了CeO2帽子层。主要讨论了温度、激光脉冲频率对CeO2隔离层的影响,用X射线θ~2θ扫描、Φ扫描对薄膜的取向和织构进行表征。结果表明在温度为610℃、激光频率为10Hz、1Pa氧压下制备的CeO2隔离层能有效地继承衬底的织构,平均平面内Φ扫描半高宽度为6.9°。扫描电镜可以观察到薄膜表面致密且无裂纹,原子力显微镜观测表面平均粗糙度在10nm以下。     

Ferromagnetic resonance studies in Co/SiO2 multilayers

The uniaxial in-plane and out-of-plane anisotropies of [Co/SiO₂] × 10 multilayers have been studied by ferromagnetic resonance, magnetometry and transmission electron microscopy. The surface and volume anisotropy constants are in the range of values typical for multilayers with Co and transition metals of the iron group. The influence of the intermixed Co-SiO₂ region is discussed.     

Effect of annealing treatment on the uniformity of CeO2/TiO2 bilayer resistive switching memory devices

Bilayer CeO₂/TiO₂ films with high-k dielectric property were prepared by rf magnetron sputtering technique at room temperature. Effect of annealing treatment on resistive switching (RS) properties of bilayer CeO₂/TiO₂ films in O₂ ambient at different temperature in the range of 350–550 °C was investigated. Our results revealed that the bilayer films had good interfacial property at 500 °C and this annealing temperature is optimum for different RS characteristics. Results showed that bilayer CeO₂/TiO₂ film perform better uniformity and reliability in resistive switching at intermediate temperature (i.e. 450 °C and 500 °C) instead of low and high annealing temperature (i.e. 350 °C and 550 °C) at which it exhibits poor crystalline structure with more amorphous background. Less Gibbs free energy of TiO₂ as compared to CeO₂ results in an easier re-oxidation of the filament through the oxygen exchange with TaN electrode. However, the excellent endurance property (>2500 cycles), data retentions (10⁵ s) and good cycle-to-cycle uniformity is observed only in 500 °C annealed devices. The plots of cumulative probability, essential memory parameter, show a good distribution of Set/Reset voltage.     

Kinetics of the O2, Pt/YSZ interface at moderate temperature in the presence of C3H8 in the gas phase

The catalytic activity of polycrystalline Pt deposited on Yttria Stabilized Zirconia (YSZ) for the oxidation of propane to CO₂ can be affected using the effect of Non-faradaic Electrochemical Modification of Catalytic Activity (NEMCA). It was found that by applying positive overpotentials and thus, supplying O^2- onto catalyst surface, up to 3.2-fold increase in the catalytic rate of C₃H₈ oxidation could be obtained at 365 °C. At 305 °C, no effect was evidenced. Using cyclic voltammetry and impedance spectroscopy, we have shown the modifications induced by the addition of C₃H₈ on the kinetics of the 0₂, Pt/YSZ interface in the temperature range 300–400 °C. A decrease of the coverage of adsorbed oxygen species produced electrochemically was evidenced as well as a decrease of the oxygen electrode reaction rate under anodic potential. Paper presented at the 8th EuroConference on Ionics, Carvoeiro, Algarve, Portugal, Sept. 16–22, 2001.     

Structure and optical properties of Ag/CeO2 nanocomposites

Silver/ceria (Ag/CeO₂) nanocomposites were prepared from Ce(NO₃)₃?6H₂O, AgNO₃, and NH₄OH with different molar ratios through a hydrothermal process, and then were completed by carrying out the precursors calcining at 750 °C for 2 h under air atmosphere. Below 1 % of Ag concentration in Ag/CeO₂ nanocomposites, the Ag crystalline structure does not appear. XRD and TEM results show evidence of two different effects (the agglomeration and the barrier effects) governing the process of crystal growth. HR-TEM image and EDX elemental analysis of the Ag/CeO₂ nanocomposite confirmed that isolated Ag nanocrystals are dispersed in the CeO₂ matrix. The red shifts are attributed to the quantum confinement effect and the valence change of the Ce⁺ ions. Ag nanoparticles can help to improve the absorption of visible light, enhancing the absorption intensity of Ag/CeO₂ nanocomposite. These results are of great significance for the control of microstructure, crystallinity, and applications for the development of nanocomposite materials.     

Microstructure and electrical conductivity of YSZ thin films prepared by pulsed laser deposition

Yttria-stabilized zirconia (YSZ) is the most common solid electrolyte material used e.g. in ceramic fuel cells. Thin films of YSZ were deposited on c-cut sapphire single crystals by pulsed laser deposition using a KrF excimer laser focused on a polycrystalline 8 mol% Y₂O₃-stabilized ZrO₂ target. Depending on the substrate temperature and the oxygen background pressure during deposition, different microstructures are obtained. XRD and high-resolution SEM revealed the formation of dense amorphous films at room temperature. At 600°C preferentially (111) oriented polycrystalline films consisting of densely agglomerated nm-sized grains of the cubic phase resulted. Grain size and surface roughness could be controlled by varying the oxygen background pressure. RBS and PIXE evidenced congruent transfer only for a low number of pulses, indicating a dynamical change of the target stoichiometry during laser irradiation. The in-plane ionic conductivity of the as-deposited crystalline films was comparable to bulk YSZ. The conductivity of initially amorphous YSZ passes a maximum during the crystallization process. However, the relative changes remain small, i.e. no significant enhancement of ionic conductivity related to the formation of a nanocrystalline microstructure is found.     

Defect characterization in CeO2−x at elevated temperatures—I: X-Ray diffraction

The atomic defect structure of nonstoichiometric ceria was studied by means of X-ray diffraction. Polycrystalline samples of CeO_2?x (0?x?0.21) have been examined at 900 and 1000°C, with the stoichiometry controlled by adjusting the oxygen partial pressure between 1 and 10^?21 atm. It was observed that the lattice expands as a function of increasing defect concentration and exhibits only fluorite-like diffraction peaks. The integrated intensities of the Bragg reflections were analyzed for CeO₂ and CeO_1.91, at 900°C by difference electron-density techniques. It was concluded that the cation sublattice is essentially intact, and that the oxygen sublattice must be defective in nonstoichiometric ceria. Least-squares analyses on CeO_2?x (0?x? 0.21) at 900 and 1000°C supported the electron-density results and also showed that the temperature factors of both cations and anions increase with an increase in defect concentration, implying greater mean-square displacement of the atoms from their equilibrium positions.     

Magnetic structures and magnetocrystalline anisotropy in bulk and thin film Fe3Pt

Magnetic structures and magnetocrystalline anisotropy (MCA) of tetragonal phase Fe₃Pt with an L1₂ atomic ordering in bulk and thin film are investigated by means of the first-principles full-potential linearized augmented plane-wave method. The results obtained predict that the tetragonal phase, in which the tetragonal distortion with (c/a) = 0.95 makes an asymmetry of magnetic properties along the c-axis (out-of-plane) and a-axis (in-plane), has an out-of-plane MCA. In addition, from the thin film calculations, the presence of surface is found to strongly enhance the out-of-plane MCA.     

Morphology and electrical properties of pulsed-laser deposited Bi2Sr2CaCu2O8+δ films on vicinal substrates

Thin films of Bi₂Sr₂CaCu₂O_8+δ have been grown on vicinal (001) SrTiO₃ substrates by pulsed-laser deposition. Transmission electron microscopy (TEM) and X-ray diffraction reveal well ordered films with the c axis of the film parallel with the c axis of the substrate for miscut angles up to θ_S≈15°. TEM also reveals the step-like film morphology due to step-flow growth. The in-plane and out-of-plane resistivities are independent of film thickness within the range 20–300 nm and agree quite well with Bi₂Sr₂CaCu₂O_8+δ single-crystal data. Received:15 May 2000 / Accepted:17 May 2000 / Published online: 9 August 2000