拓扑缺陷对单壁碳纳米管电子结构及其光学光谱的影响

应用密度泛函理论计算了半导体型单壁碳纳米管(7,0)和(8,0)以及其发生镜像对称和非镜像对称Stone-Wales形变、形成异质结(7,0)—(8,0)情况下的能带结构、吸收光谱、反射光谱,并对计算结果进行了比较。研究发现： 引入拓扑缺陷态后,碳纳米管的能带结构发生了明显的变化,费米能级在不同缺陷情况下移动方向不一致;碳管的吸收和反射明显减弱且吸收峰和反射峰在低能区发生红移现象;在光子能量约为E=13 eV处各碳管的吸收谱和反射谱中均出现一特征峰,并且在引入缺陷以后该特征峰向高能区移动。文章对计算结果进行了分析和探讨,可望利用这种拓扑缺陷的引入而产生的光电特性来设计碳管光电器件。     

硼掺杂单壁碳纳米管吸附甲醛的电子结构和光学性能研究

应用基于第一性原理的密度泛函理论研究了硼原子取代掺杂的（8,0）碳纳米管吸附甲醛气体分子的束缚能、电子结构以及光吸收和反射性质.研究发现,硼原子掺杂的碳纳米管对甲醛气体具有较强的敏感性,其束缚能大大增加,电荷转移更加显著,吸收峰和反射峰增多,峰值减小,且在低能区发生蓝移现象,在能量约为172 eV处均出现一特征峰.对计算结果进行了讨论,期望利用硼掺杂碳管来制作检测甲醛的纳米传感器和光电器件. 关键词： 碳纳米管 甲醛 硼原子取代掺杂 光学性能     

氮掺杂手性碳纳米管的电子结构和输运特性的理论研究

运用第一性原理的密度泛函理论,结合非平衡格林函数,研究了氮原子取代掺杂手性单壁(6,3)碳纳米管的电子结构和输运特性.计算结果表明:不同构形和不同数目的氮原子取代掺杂对手性碳管的输运性质有很复杂的影响.研究发现,氮原子掺杂明显改变了碳管的电子结构,使金属型手性碳管的输运性能降低,电流-电压曲线呈非线性变化,而且输运性能随着杂质原子间间距的变化而发生显著改变.在一定条件下,金属型碳管向半导体型转变. 关键词： 手性单壁碳纳米管 氮掺杂 电子结构 输运性能     

含有Stone-Wales缺陷的碳纳米管的热导率模拟

本文以Stone-Wales(SW)缺陷对碳纳米管热导率的影响为研究内容,采用非平衡态分子动力方法,模拟计算存在一个或多个SW缺陷的碳纳米管的轴向温度分布和热导率,并与无缺陷完整碳纳米管进行比较,开展缺陷效应分析,考察了缺陷浓度、碳管长度、碳管手性以及环境温度等因素的影响。模拟结果表明,由于缺陷存在,碳管轴向温度分布在缺陷处产生非线性的间断性跳跃,局部热阻增大。相对完整无缺陷碳管,含有SW缺陷的碳管热导率显著下降;随着缺陷数目的增加,碳管热导率下降的幅度增大。无论是否存在缺陷,锯齿型碳管的热导率通常小于扶手椅型的碳管,而长碳管的热导率通常大于短碳管;相对于锯齿型/长碳管,扶手椅型碳管/短碳管对SW缺陷更为敏感。     

双掺杂铌酸锂晶体的第一性原理研究

本文利用第一性原理研究了 晶体、 晶体和 晶体的电子结构和光学性质。通过对电子结构的分析,发现杂质能级的深浅与掺杂元素原子序数有关。原子序数越大,杂质能级越深。通过对 晶体、 晶体和 晶体的吸收谱进行分析,并与单掺杂 晶体的吸收谱进行比较,发现双掺杂在可见光区域吸收率明显提高,约为单掺杂的3倍。 晶体分别在380nm和590nm处形成吸收峰, 晶体可见光区域吸收率比 以及 晶体高,分别在450nm附近和660nm附近出现吸收峰, 晶体在430nm到600nm之间区域都有较高的吸收率,并在770nm的长波范围有一小的吸收峰。计算结果与双色全息存储（双光子全息存储）所用记录光的波长相符。     

Ti和Al共掺杂ZnS的电子结构和光学性质

基于密度泛函理论的第一性原理研究Ti和Al单掺杂和(Ti,Al)共掺杂ZnS的能带结构、电子态密度分布、介电函数、光学吸收系数,分析了掺杂后电子结构与光学性质的变化.计算结果表明:掺杂后禁带中引入了新的杂质能级,费米能级进入导带.掺杂改变了ZnS晶体的导电特性,使它表现出金属特性,导电性能增强;与纯净ZnS相比,Ti单掺杂和(Ti,Al)共掺杂ZnS的吸收边均出现明显的红移,且在1.79eV左右出现了一个新峰;而Al单掺杂ZnS的吸收边则发生明显的蓝移,且不产生新的吸收峰.     

拓扑缺陷对Armchair型小管径多壁碳纳米管输运性质的影响

采用密度泛函理论和非平衡格林函数方法研究了纯净的及带有不同数目的 Stone-Wale拓扑缺陷下的扶手椅型单壁,双壁和三壁小管径碳纳米管的能带结构和电子输运性质,通过计算并分析不同偏压下的微分电导和非弹性电子隧穿谱(IETS),计算结果表明单壁,双壁和三壁碳纳米管的特征偏压区间分别为[-1.0 V,1.0 V],[-0.5 V,0.5 V]和[-0.25 V,0.25 V],特征偏压区间内SW拓扑缺陷所产生的电导波动平缓,而特征偏压区间外因缺陷的数目变化所带来的电导波动显著,通过IETS谱线的分析得到单壁,双壁和三壁碳纳米管的特征峰偏压分别为±1.25 V,±0.625 V和±0.125 V.碳纳米管的特征偏压区间和IETS特征峰偏压可为较小管径碳纳米管单壁,双壁和多壁类型的区分提供一种新的途径,同时也为小管径多壁碳纳米管的输运性质在出现拓扑缺陷时的响应提供参考依据.     

拓扑缺陷对Armchair型小管径多壁碳纳米管输运性质的影响

采用密度泛函理论和非平衡格林函数方法研究了纯净的及带有不同数目的Stone-Wale拓扑缺陷下的扶手椅型单壁, 双壁和三壁小管径碳纳米管的能带结构和电子输运性质, 通过计算并分析不同偏压下的微分电导和非弹性电子隧穿谱(IETS), 计算结果表明单壁, 双壁和三壁碳纳米管的特征偏压区间分别为[-1.0V, 1.0V], [-0.5V, 0.5V] 和[-0.25V, 0.25V], 特征偏压区间内SW拓扑缺陷所产生的电导波动平缓, 而特征偏压区间外因缺陷的数目变化所带来的电导波动显著, 通过IETS谱线的分析得到单壁, 双壁和三壁碳纳米管的特征峰偏压分别为 1.25V, 0.625V和 0.125V. 碳纳米管的特征偏压区间和IETS特征峰偏压可为较小管径碳纳米管单壁, 双壁和多壁类型的区分提供一种新的途径, 同时也为小管径多壁碳纳米管的输运性质在出现拓扑缺陷时的响应提供参考依据.     

Mg, Sr掺杂CaF2电子结构及光学性质的第一性原理研究

采用基于密度泛函理论(DFT)的第一性原理方法对纯CaF2晶体和Mg、Sr掺杂CaF2体系的晶体结构、电学以及光学性质进行了详细的对比研究, 结果表明: 与纯CaF2晶体相比, 掺杂体系的带隙变窄且形成新的态密度峰, 费米面附近出现F与Mg、Sr原子间轨道杂化加强现象. 另外, 掺杂体系仅表现出介电性质, 其对紫外光的吸收强度大大减弱, 而Ca7SrF16掺杂体系在25.44 eV处产生新的小吸收峰. CaF2晶体掺入Mg、Sr原子后, 体系在紫外光区的消光系数减小且对紫外光的透过率增大. 此外, 掺杂体系的反射谱峰和损失函数峰均发生红移且峰值显著降低.     

Mg, Sr掺杂CaF2电子结构及光学性质的第一性原理研究

采用基于密度泛函理论(DFT)的第一性原理方法对纯CaF2晶体和Mg、Sr掺杂CaF2体系的晶体结构、电学以及光学性质进行了详细的对比研究, 结果表明: 与纯CaF2晶体相比, 掺杂体系的带隙变窄且形成新的态密度峰, 费米面附近出现F与Mg、Sr原子间轨道杂化加强现象. 另外, 掺杂体系仅表现出介电性质, 其对紫外光的吸收强度大大减弱, 而Ca7SrF16掺杂体系在25.44 eV处产生新的小吸收峰. CaF2晶体掺入Mg、Sr原子后, 体系在紫外光区的消光系数减小且对紫外光的透过率增大. 此外, 掺杂体系的反射谱峰和损失函数峰均发生红移且峰值显著降低.     

Effects of doping, Stone Wales and vacancy defects on thermal conductivity of single-wall carbon nanotubes

The thermal conductivity of carbon nanotubes with certain defects (doping, Stone-Wales, and vacancy) is investigated by using the non-equilibrium molecular dynamics method. The defective carbon nanotubes (CNTs) are compared with perfect tubes. The influences of type and concentration of the defect, length, diameter, and chirality of the tube, and the ambient temperature are taken into consideration. It is demonstrated that defects result in a dramatic reduction of thermal conductivity. Doping and Stone-Wales (SW) defects have greater effect on armchair tubes, while vacancy affects the zigzag ones more. Thermal conductivity of the nanotubes increases, reaches a peak, and then decreases with increasing temperature. The temperature at which the thermal conductivity peak occurs is dependent on the defect type. Different from SW or vacancy tubes, doped tubes are similar to the perfect ones with a sharp peak at the same temperature. Thermal conductivity goes up when the tube length grows or diameter declines. It seems that the length of thermal conductivity convergence for SW tubes is much shorter than perfect or vacancy ones. The SW or vacancy tubes are less sensitive to the diameter change, compared with perfect ones.     

Effect of N doping and Stone-Wales defects on the electronic properties of graphene nanoribbons

The effects of nitrogen substitutional doping in the Stone-Wales (SW) defect on the electronic transport properties of zigzag-edged graphene nanoribbon (ZGNR) are studied by using density functional theory combined with nonequilibrium Green’s function. The transformation energies of all doped nanostructures are evaluated in terms of total energies and, furthermore, it is found that the impurity placed on the center of the ribbon is the most energetically favorable site. Nitrogen substitution gives rise to a complete electron backscattering region in doped configurations, and the location of which is dependent on the doping sites. The electronic and transport properties of doped ZGNRs are discussed. Our results suggest that modification of the electronic properties of ZGNR with topological defects by substitutional doping might not be significant for some doping sites.     

Effects of Stone–Wales defect upon adsorption of formaldehyde on graphene sheet with or without Al dopant: A first principle study

The adsorption mechanisms of formaldehyde (H₂CO) on modified graphene, including aluminum doping, Stone–Wales (SW) defects, and a combination of these two, were investigated via density functional theory (DFT). It was found that the graphene with SW defect is more sensitive than that of perfect graphene for detecting H₂CO molecules. Compared with Al-doped graphene/H₂CO complex, the binding energy for Al-doped SW defect complex can be enhanced by the introduction of a SW defect. The large values of binding energy and net charge transfer for this complex indicate a strong chemisorption and a larger affinity with H₂CO for the modified graphene. Furthermore, the density of states (DOS) of the complex shows that the effect of defect–dopant combination on adsorption mechanisms is due to the orbital hybridization between the Al atom and its adjacent C atoms. In addition, it can be expected that adsorption of H₂CO on the surface of Al-doped SW defect may occur easily, and the Al-doped SW graphene is more suitable for H₂CO gas detection.     

First-principles study of plasmons in doped graphene nanostructures

The operating frequencies of surface plasmons in pristine graphene lie in the terahertz and infrared spectral range,which limits their utilization. Here, the high-frequency plasmons in doped graphene nanostructures are studied by the timedependent density functional theory. The doping atoms include boron, nitrogen, aluminum, silicon, phosphorus, and sulfur atoms. The influences of the position and concentration of nitrogen dopants on the collective stimulation are investigated,and the effects of different types of doping atoms on the plasmonic stimulation are discussed. For different positions of nitrogen dopants, it is found that a higher degree of symmetry destruction is correlated with weaker optical absorption. In contrast, a higher concentration of nitrogen dopants is not correlated with a stronger absorption. Regarding different doping atoms, atoms similar to carbon atom in size, such as boron atom and nitrogen atom, result in less spectral attenuation. In systems with other doping atoms, the absorption is significantly weakened compared with the absorption of the pristine graphene nanostructure. Plasmon energy resonance dots of doped graphene lie in the visible and ultraviolet spectral range.The doped graphene nanostructure presents a promising material for nanoscaled plasmonic devices with effective absorption in the visible and ultraviolet range.     

In掺杂ZnO超晶格光学性质的研究

采用基于第一性原理的线性缀加平面波方法, 计算了超晶格ZnO掺In的光学性质. 计算结果表明, 掺入In元素后Fermi能级进入导带, 介电函数、吸收系数、折射率、反射率都在Fermi面附近产生新的跃迁峰. 随着掺杂层数的增多, 跃迁峰发生红移, 当掺杂两层In时跃迁峰峰值最大, 同时吸收系数的吸收边随掺杂层数的增多而逐渐减小. 与In掺杂ZnO超晶胞相比, ZnO超晶格在可见光范围内具有高透过率的特点.     

磷、铋掺杂半导体锗光学性质的第一性原理研究

采用基于密度泛函理论框架下的第一性原理计算,研究了不同浓度N型掺杂锗的电子结构和光学性质.掺杂元素分别为磷和铋,并对掺杂后的电子态密度和光学性质进行计算、分析.计算结果表明:N型掺杂会使得费米能级向导带方向移动.在低能区段,介电函数、折射率和吸收系数都受到影响,但到高能区后只有消光系数和吸收系数会被影响;反射率在整个能区都受影响,在中能区掺杂会使反射率提高,在低、高能区会减弱反射率;对损失函数的影响是掺杂浓度越高、损耗峰越小、峰值出现处能量越高.研究结果对N型掺杂半导体锗的光学应用具有一定的指导意义,可以根据上述结论有针对性地调节掺杂浓度和能量范围.     

稀土元素(Ce,Pr)掺杂GaN的电子结构和光学性质的理论研究

采用基于密度泛函理论的第一性原理平面波赝势法计算了稀土元素Ce,Pr掺杂GaN的晶格参数、能带、电子态密度和光学性质,使用LSDA +U的方法处理具有强关联作用的稀土4f态,并分析比较计算结果.计算表明:掺入Ce和Pr后的体系相比未掺杂的GaN晶格常数增大,带隙变窄,并分别在禁带中和价带顶附近引入了局域的杂质能级,该能级主要由Ce和Pr的4f电子提供;掺杂后都发生了磁有序化并产生磁矩;最后定性分析了掺杂前后介电函数和光吸收系数的变化,掺Ce的体系在介电函数和吸收系数的低能区出现了峰值,该峰的出现和禁带中的杂质能级到导带底的跃迁有关,而掺Pr的体系由于带隙变窄使介电峰和吸收边发生红移.     

Efficient above-band-gap light emission in germanium Invited Paper

We report an above-band-gap radiative transition in the photoluminescence spectra of single crystalline Ge in the temperature range of 20-296 K. The temperature-independence of the peak position at ～0.74 eV is remarkably different from the behavior of direct and indirect gap transitions in Ge. This transition is observed in n-type, p-type, and intrinsic single crystal Ge alike, and its intensity decreases with the increase of temperature with a small activation energy of 56 meV. Some aspects of the transition are analogous to Ⅲ-Ⅴ semiconductors with dilute nitrogen doping, which suggests that the origin could be related to an isoelectronic defect.     

The effect of crystal lattice distortions on the electronic band structure and optical properties of the N,V- and N,Na-doped anatase

The crystal structure, energy band structure and optical absorption of the N,V-doped and N,Na-doped anatase are studied by means of the first-principle pseudo-potential plane wave and linear muffin-tin orbitals methods. We show that the nitrogen and vanadium atoms have a tendency to form covalently bonded pairs. The crystal lattice distortions associated with doping essentially affect the optical absorption. With doping the impurity bands emerge in the band gap of the host anatase, however, a noticeable increase of optical absorption takes place at the energy only above 3 eV. Possible impact of this effect on the photocatalytic activity of the doped anatase is outlined.     

Defect-induced enhancement of absorption coefficient and electroabsorption properties in GaN/AlGaN centered defect quantum box (CDQB) nanocrystal

In this paper, effect of an introduced cubic defect on electrical and optical properties of cubic quantum dot is studied. Self-consistent solution of the Schrödinger-Poisson equations for evaluation of the proposed complex quantum dot is used. Optical properties (absorption and electroabsorption properties associated with intersublevel transition) of the proposed structure are also investigated using density matrix method. Effects of defect size on energy levels, carrier density, matrix element and optical linear absorption coefficient of centered defect quantum box (CDQB) are examined. It is shown that with increasing the defect size a considerable enhancement in magnitude of the absorption coefficient and also red-shift in resonance frequency are achievable. We show that the CDQB has higher absorption peak (at least 80 times) and tunable absorption spectra, due to increase of the matrix element and modified energy sublevels, compared quantum box structure without defect. Also, it is shown that the defect enhances electroabsorption properties (modulation bandwidth and the maximum variation of absorption peak with external field) of the quantum box structure.