Das kritische magnetische Verhalten von EuO

Mössbauer effect and magnetization measurements were employed in order to study the static and especially the dynamic magnetic properties of the nearly Heisenberg ferromagnet EuO near its Curie temperature,T _c=69.2 °K. The critical exponent β of the spontaneous magnetization was determined to be β=0.34±0.02. It was shown that critical slowing down of spin fluctuations takes place nearT _c with spin relaxation times between 7×10^?11 sec (T=1.01T _c) and 1.5×10^?1 sec (T=1.03T _c). The experimental values of the relaxation time were found to be in satisfactory agreement with theoretically computed ones. Just belowT _c the Mössbauer spectra exhibit relaxation effects, which are characteristic for the occurence of critical super-paramagnetism. Investigations of several samples indicated quantitatively, that critical superparamagnetism has its origin in the non ideal composition of the real crystal.     

Thermal expansion op NbSe2 and TaS2

The lattice parameters a₀ and c₀ of the hexagonal 2H polytype of NbSe₂; have been measured over the temperature range 156–478 K for a₀, and 138–482 K for c₀. The lattice parameter c₀ of the hexagonal 2H polytype of TaS₂ has been measured between 151 and 472 K. The lattice parameters a₀ and c₀ for the octahedral 1T polytype of TaS₂ been measured between 165 and 488 K. Over these temperature ranges, the following average coefficients of thermal expansion have been measured; 2H-NbSe₂, 6.6 × 10^?6K^?1 along the a-axis, 19.9 × 10^?6 K^?1 along the c-axis; 2H-TaS₂, 15.6 × 10^?6 K^?1 along the c-axis; IT-TaS₂, 12.7 × 10^?6 K^?1 along the c-axis. The parameter c₀ of 1T-TaS₂ undergoes two transitions which may be explained in terms of charge density waves.     

The relaxation rate of the magnetic moment of a shallow acceptor center as a function of impurity concentration in silicon

A study is made into the temperature dependence of residual polarization of negative muons in crystalline silicon with the concentration of impurity of the n-and p-types ranging from 8.7×10¹³ to 4.1× 10¹⁸ cm^?3. The measurements are performed in a magnetic field of 1000 G transverse to the muon spin, in the temperature range from 4.2 to 300 K. The form of the temperature dependence of the relaxation rate v of the magnetic moment of the μAl⁰ acceptor in silicon is determined. For a nondegenerate semiconductor, the relaxation rate depends on temperature as v ∝ T ^q (q ≈ 3). A variation in the behavior of the temperature dependence and a multiple increase in the relaxation rate are observed in the range of impurity concentration in excess of 10¹⁸ cm^?3. The importance of phonon scattering and spin-exchange scattering of free charge carriers by an acceptor from the standpoint of relaxation of the acceptor magnetic moment is discussed. The constant of hyperfine interaction in an acceptor center formed by an atom of aluminum in silicon is estimated for the first time: |A _hf (Al)/2π| ～ 2.5×10⁶s^?1.     

NMR investigations of dynamical processes in orientationally ordered and disordered NaCN,RbCN and CsCN

The nuclear spin lattice relaxation timeT ₁ of the²³Na,⁸⁵Rb,⁸⁷Rb,¹³³Cs,¹⁴N nuclei is measured in NaCN, RbCN and CsCN as a function of temperature below and above the ferroelastic phase transition temperatureT _c. BelowT _c the behaviour ofT ₁ of the alkali nuclei renders possible to determine the flip frequency of the CN molecules and its temperature dependence. AboveT _c from the¹⁴NT ₁ the correlation time τ_c of the rotational motions of the CN molecules and its temperature dependence is determined. An empirical rule is verified demonstrating that atT _c the correlation times take nearly the same values for all cyanides. For the high and low temperature phases one obtains atT _c about τ_c=5·10^?13s and τ_c=5·10^?11s, respectively. The results are discussed with respect to the mechanism of the phase transition.     

Magnetic moment relaxation of a shallow acceptor center in heavily doped silicon

Results of studying the temperature dependence of the residual polarization of negative muons in crystalline silicon with germanium (9×10 ¹⁹ cm ^?3 ) and boron (4.1×10 ¹⁸ , 1.34×10 ¹⁹ , and 4.9×10 ¹⁹ cm ^?3 ) impurities are presented. It is found that, similarly to n-and p-type silicon samples with impurity concentrations up to ～10 ¹⁷ cm ^?3 , the relaxation rate ν of the magnetic moment of a _μ Al acceptor in silicon with a high impurity concentration of germanium (9×10 ¹⁹ cm ^?3 ) depends on temperature as ν～T ^q , q≈3 at T=(5–30) K. An increase in the absolute value of the relaxation rate and a weakening of its temperature dependence are observed in samples of degenerate silicon in the given temperature range. Based on the experimental data obtained, the conclusion is made that the spin-exchange scattering of free charge carriers makes a significant contribution to the magnetic moment relaxation of a shallow acceptor center in degenerate silicon at T?30 K. Estimates are obtained for the effective cross section of the spin-exchange scattering of holes (σ _h ) and electrons (σ _e ) from an Al acceptor center in Si: σ _h ～10^?13 cm² and σ _e ～8×10^?15 cm² at the acceptor (donor) impurity concentration n _a (n _d )～4×10¹⁸ cm^?3.     

Transport properties of n-type ferromagnetic semiconductor HgCr2−xInxSe4(x = 0.100)

Measurements of the electrical conductivity, magnetoresistance, and Hall effect were performed on a n-type ferromagnetic semiconductor HgCr_2?xIn_xSe₄(x = 0.100) single crystal from 6.3 to 296 K in magnetic fields up to 1.19×l0⁶A/m. The conductivity decreases rapidly near the Curie temperatureT_c (≈120 K) as the temperature is raised. A large peak in the magnetoresistance is observed near T_c. The Hall effect measurements indicate that the temperature dependence of the conductivity and the magnetoresistance are due mostly to a change in electron mobility. The electron mobility is 1.2 × 10^?2 m²/V · s at 6.3 K, and decreases rapidly near T_c with the rise in temperature. Then it increases slowly from 5.5 × 10^?4 m²/V · s at 160 K to 7.5 × 10^?4 m²/V · s at 241 K. This temperature dependence of the electron mobility can be explained in terms of the spin-disorder scattering which takes into account the exchange interaction between charge carriers and localized magnetic moments.     

Magnetization behaviour of DyAl2 single crystals

We report the theoretical interpretation of the magnetization and the magnetocrystalline anisotropy of ferromagnetic DyAl₂ single crystals between 4.2 and 60 K and magnetic fields up to 15 T. Good agreement between theory and experiment is obtained by using three temperature independent parameters: the two crystal field parameters B₄ = (?0.50 ± 0.05) × 10^?4 meV, B₆ = ? (0.51 ± 0.05) × 10^?6 meV and the Curie temperature T_c = (62 ± 2) K.     

Direct observations of the decay of beauty particles into charm particles

The associated production of a pair of beauty particles B^? and $\text{B}{}^0$ by a 350 GeV π^? interaction has been observed in an emulsion target inserted in an array of silicon microstrip detectors. Both beauty particles decay into charm particles, both of which are also observed to decay in the emulsion. Two negative muons were identified and their momenta measured in a large muon spectrometer. One muon has a p_T of 1.9 GeV/c and is associated with a beauty particle decay. The other, with a p_T of 0.45 GeV/c is associated with a charm particle decay. The flight times of the two beauty particles are respectively (0.8 ± 0.1) × 10^?13 s and (5⁺²_?1) × 10^?13 s. Alternative interpretations of this event have negligible probability.     

Specific features of anion transfer in HoF<Subscript>3</Subscript> crystals at high temperatures

The anionic conductivity of HoF₃ single crystals with a β-YF₃ structure (orthorhombic crystal system, space group Pnma) is investigated over a wide range of temperatures (323–1073 K). The unit cell parameters of HoF₃ crystals are as follows: a=0.6384±0.0009 nm, b=0.6844±0.0009 nm, and c=0.4356±0.0005 nm. It is revealed that the conductivity anisotropy of the HoF₃ crystals is insignificant over the entire temperature range covered. The crossover from one mechanism of ion transfer to another mechanism is observed near the critical temperature T_c≈620 K. The activation enthalpy of electrical conduction is found to be ΔH₁=0.744 eV at T<T_c and ΔH₂=0.43 eV at T>T_c. The fluorine vacancies are the most probable charge carriers in HoF₃ crystals. The fluorine ionic conductivities at temperatures of 323, 500, and 1073 K are equal to 5×10^?10, 5×10^?6, and 2×10^?3 S cm^?1, respectively.     

Spin relaxation parameters in recombining radical ion pair (diphenylsulfide-d10)+/(p-Terphenyl-d14)− obtained by OD ESR and quantum beats techniques

Parameters of paramagnetic relaxation were determined by OD ESR and quantum beats techniques for a recombining pair of radical ions (DPS-d₁₀)⁺/(PTP-d₁₄)^? inn-hexane, isooctane,cis-decalin, and squalane solutions. TheT ₂ relaxation time determined by quantum beats technique is independent of solvent viscosity and magnetic field strength in the range 170–9600 G. These data are in agreement with the results obtained by OD ESR technique assuming fastT ₁ relaxation for radical cation. Neglecting the contribution of radical anion relaxation, we obtainedT _1c=T _2c?50 ns for (DPS-d₁₀)⁺.     

Response of lysozyme internal dynamics to hydration probed by13C and1H solid-state NMR relaxation

We have studied the hydration dependence of the internal protein dynamics of hen egg white lysozyme by naturally abundant¹³C and¹H nuclear magnetic resonance (NMR) relaxation. NMR relaxation timesT ₁, off-resonanceT _1p and proton-decoupled on-resonanceT _1p (only for carbon expriments) were measured in the temperature range from 0 to 50°C. The spectral resolution in carbon cross-polarization magic angle spinning spectrum allows to treat methine, methylene and methyl carbons separately, while proton experiments provide only one integral signal from all protons at a time. The relaxation times were quantitatively analyzed by the well-established correlation function formalism and model-free approach. The whole set of the data could be adequately described by a model assuming three types of motion having correlation times around 10^?4, 10^?9 and 10^?12 s. The slowest process originated from correlated conformational transitions between different energy minima, the intermediate process could be identified as librations within one energy minimum, and the fastest one is a fast rotation of methyl protons the symmetry axis of methyl groups. A comparison of the dynamic behavior of lysozyme and polylysine obtained from a previous study (A. Krushelnitsky, D. Faizullin, D. Reichert, Biopolymers 73, 1–15, 2004) reveals that in the dry state both biopolymers are rigid on both fast and slow time scales. Upon hydration, lysozyme and polylysine reveal a considerable enhancement of the internal mobility, however, in different ways. The side chains of polylysine are more mobile than those of lysozyme, whereas for the backbone a reversed picture is observed. This difference correlates with structural features of lysozyme and polylysine discussed in detail. Due to the presence of a fast spin diffusion, the analysis of proton relaxation data is a more difficult task. However, our data demonstrate that the correlation functions of motion obtained from carbon and proton experiments are substantially different. We explained this by the fact that these two types of NMR relaxation experiments probe the motion of different internuclear vectors. The comparison of the proton data with our previous results on proton relaxation timesT ₁ measured over a wide temperature range indicates that at low temperatures lysozyme undergoes structural rearrangements affecting the amplitudes and/or activation energies of motions.     

Dielectric dispersion in the microwave range of the incommensurate phase (NH4)2BeF4

The complex dielectric constant of (NH₄)₂BeF₄ single crystals was measured in the frequency range from 0.6 to 300 MHz in the vicinity of the transition temperature T_c. It was found that, the relaxation frequency is about 1 × 10⁸Hz atT_c. Dielectric relaxation can be described by a polydispersive process.     

Critical behaviour of a uniaxial ferromagnet,ErCl3·6H2O with predominant dipolar interactions

The parallel magnetic susceptibility χ of a uniaxial ferromagnet ErCl₃·6H₂O has been measured between 0.3 and 4.2K and specially near T_c = 0.353 K. The predominant contribution to the Curie-Weiss temperature is due to the dipolar interactions. χ is proportional to ?^?γ with $\text{? =}\text{T}\text{T}{}_{\mathrm{c}}\text{?1}$ in the range 10^?3 < ? < 5 × 10^?2. The γ value, γ = 1.01 ±0.03 is consistent with the theoretical prediction for a uniaxial dipolar ferromagnet.     

Effect of the magnetic field on the 3d ordering and on the spin correlations of the linear antiferromagnet TMMC

The effect of an external magnetic field in the range 6–47 kOe on the low temperature proton spin-lattice relaxation rate in TMMC has been investigated. A peak in T₁^?1 at the 3d ordering temperature has been detected. Values of T_N for fields up to 47 kOe have been determined.     

Charge transport and pressure dependence of Tc of single crystal,ferromagnetic EuB6

We present Hall Effect and resistivity data which demonstrate that EuB₆ is a degenerate semiconductor transforming into a metal or semimetal below the ferromagnetic ordering temperature, T_c = 13.7K. We also report an anomalously large, positive pressure dependence of T_c, (1/T_c)(ΔT_c/ΔP) ? 4 × 10^?2 kbar^?1.     

Ferroelastic phase transition and anomalous elastic and thermal properties of betaine borate (CH3)3NCH2COO·H3BO3

The temperature and pressure derivatives of the elastic constants of orthorhombic betaine borate, (CH₃)₃NCH₂COO·H₃BO₃, have been determined by measuring temperature and stress induced shifts of resonance frequencies of thick plates at ca. 15 MHz in the range between 140 and 300 K and 0 and 3 kbar. The elastic ‘shear’ resistance c₄₄ exhibits a value as low as 0.0492×10¹⁰Nm^-2at 293 K. With decreasing temperature c₄₄ approaches zero at ca. 142.5 K, indicating an acoustic soft mode behaviour connected with a ferroelastic phase transition. The softening of c₄₄ is described in a good approximation by c₄₄(T)_p=0 =alogT/T₀ with a=0.0663×10¹⁰Nm^-2 and T₀ = 139.5 K. Further, c₄₄ decreases with increasing pressure according to the linear relation c₄₄(p)_{T=293 K} = 0.0492?0.184×10^-4p (p in bar, c₄₄ in 10¹⁰ Nm^-2). All other elastic constants show a quite normal temperature and pressure dependence. At 293 K the transition is induced by a pressure of 2.65 kbar. The transition temperature T_c depends linearly on pressure according to T_c = 142.5+0.0568 p (pinbar, T_cinK). Passing through the transition no discontinuous change of the lattice constants is observed. The three principal coefficients of thermal expansion and the pressure derivatives of the dielectric constants exhibit discontinuities at the transition. The transition is of strongly second order.     

Nuclear Spin relaxation mediated by Fermi-edge electrons in n-type GaAs

A method based on the optical orientation technique was developed to measure the nuclear-spin lattice relaxation time T ₁ in semiconductors. It was applied to bulk n-type GaAs, where T ₁ was measured after switching off the optical excitation in magnetic fields from 400 to 1200 G at low (< 30 K) temperatures. The spin-lattice relaxation of nuclei in the studied sample with n _D = 9 × 10¹⁶ cm^?3 was found to be determined by hyperfine scattering of itinerant electrons (Korringa mechanism) which predicts invariability of T ₁ with the change in magnetic field and linear dependence of the relaxation rate on temperature. This result extends the experimentally verified applicability of the Korringa relaxation law in degenerate semiconductors, previously studied in strong magnetic fields (several Tesla), to the moderate field range.     

Field dependence of the thermal conductivity of K2CuCl4 · 2H2O near its ferromagnetic Curie temperature

The thermal conductivity of the ferromagnetic insulator K₂CuCl₄ · 2H₂O has been measured near its Curie temperature T_c. The measurements were made as a function of temperature in constant external magnetic field and as a function of field along isotherms. The results indicate a relaxation rate for magnetic critical scattering of phonons varies as H^?1/2.     

Intrinsic pinning properties of FeSe0.5Te0.5

The intrinsic pinning properties of FeSe_0.5Te_0.5, which is a superconductor with a critical temperature T_c of approximately 14 K, were studied through the analysis of magnetization curves obtained using an extended critical state model. For the magnetization measurements carried out with a superconducting quantum interference device (SQUID), external magnetic fields were applied parallel and perpendicular to the c-axis of the sample. The critical current density J_c under the perpendicular magnetic field of 1 T was estimated using the Kimishima model to be equal to approximately 1.6 × 10⁴, 8.8 × 10³, 4.1 × 10³, and 1.5 × 10³ A/cm² at 5, 7, 9, and 11 K, respectively. Furthermore, the temperature dependence of J_c was fitted to the exponential law of J_c(0) × exp(?αT/T_c) up to 9 K and the power law of J_c(0) × (1 ? T/T_c)ⁿ near T_c.     

Large angle production of stable particles heavier than the proton and a search for quarks at the CERN intersecting storage rings

Measurements have been performed on production of particles with mass 1.5 GeV/c² and charge $\text{?}\text{2}\text{3}$ for θ_lab = 62.5° and $\text{s}\text{= 53}\text{GeV}$. At p_T = 0.7 GeV/c the relative rate of production of antideuterons to π^? is (5 ± 1) × 10^?5. The deuteron to antideuteron ratio is 3.7 ± 1.2. No new stable particle has been amongst 0.7 × 10⁸ charged particles entering our detector.