CdSxSe1-x玻璃的光双稳皮秒动力学特性研究

本文在掺CdS_xSe_1-x微晶阵列玻璃中观测到上升和下降时间为20微微秒的光学双稳跳跃过程,并从实验数据估算出CdS_xSe_1-x玻璃的三阶非线性系数为1×10^-8esu,与已报道用简并四波混频实验所测得的三阶非线性系数在数量级上一致,快速的光学双稳开关过程以及大的三阶非线性系数显示这种材料的光学双稳态是属于带填充效应的结果。     

掺CdSxSe1-x玻璃波导分布反馈光学双稳器件

本文给出了掺CdS_xSe_1-x玻璃平面波导分布反馈(DFB)光学双稳器件的设计和制备方法,实现了低功耗、快速的本征光学双稳。     

Studies on Structural,Morphological and Optical Properties of Chemically Deposited CdS<Subscript>1-x</Subscript>Se<Subscript>x</Subscript> Thin Films

The thin films of CdS_1-xSe_x were successfully deposited over glass substrates by chemical bath deposition technique. Cadmium acetate, thiourea and sodium selenosulfate were used as source materials for Cd²⁺, S^2? and Se^2? ions, while 2-mercaptoethanol was used as capping agent. The various deposition conditions such as precursor concentration, deposition temperature, pH and deposition time were optimized for the deposition of CdS_1-xSe_x thin films of good quality and the films were annealed at 200° and 300 °C. The structural, morphological, chemical and optical properties were examined by various characterization techniques and discussed in detail. The optical band gap of CdS_1-xSe_x thin film samples were estimated and found in the range from 2.11 to 1.79 eV for as-deposited and annealed thin films.     

CdSxSe1-x半导体微晶掺杂玻璃在抗共振环APM激光器中不能压窄脉

本文对具有较大非线性系数,较快非线性响应和回复时间的CdS_xSe_1-x半导体微晶掺杂玻璃能否在挽共振环(亦称为非谐振环)APM激光器中有效地压缩脉宽等问题做了详尽的理论与实验的切耐与分析。理论计算与实验研究的结果均表明:在抗共振环APM激光器中,应用CdS_xSe_1-x半导体微晶掺杂玻璃不能使超短光脉冲宽度被压窄。     

Studies on growth and characterization of ternary CdS1−xSex alloy thin films deposited by chemical bath deposition technique

Ternary alloyed CdS_1−xSe_x thin films of variable composition ‘x’ were grown by the simple and economical chemical bath deposition technique. The as-grown thin films were characterized for structural, compositional, surface morphological, optical and electrical studies. The X-ray diffraction (XRD) patterns of the sample indicated that all the samples were polycrystalline in nature with hexagonal structure. Scanning electron microscopy (SEM) micrographs showed uniform morphology with spherical shaped grains distributed over entire glass substrate. EDAX studies confirmed that the CdS_1−xSe_x films were having approximately same stoichiometry initially as well as finally. Room temperature optical measurements showed that band gap engineering could be realized in CdS_1−xSe_x thin films via modulation in composition ‘x’. Electrical resistivity of CdS_1−xSe_x thin films for various compositions was found to be low. The broad and fine tunable band gap properties of ternary CdS_1−xSe_x thin films have potential applications in opto-electronic devices.     

Synthesis and properties of In2(Se1-xTex)3 thin films: a new semiconductor compound

In₂(Se_1-xTe_x)₃ polycrystalline films were prepared by a dual-source thermal evaporation technique. The depositions onto glass and SnO₂-coated glass substrates were carried out in a vacuum chamber and followed by an annealing in neutral ambient (Ar or N₂). The structural, morphological and compositional studies of the films were made by X-ray diffraction, energy-dispersive X-ray analysis, X-ray photoelectron spectroscopy, scanning electron microscopy, Raman scattering and optical transmission. Optimum conditions are investigated for the formation of the ternary compound In₂(Se_1-xTe_x)₃ in order to tune the band gap by changing the Te concentration. The film properties as a function of Te amount are discussed. It is shown that single-phase, textured and homogeneous layers of In₂(Se_1-xTe_x)₃ can be grown with x≤0.2 at optimal deposition and heat treatment conditions. For x≅0.17 these films showed an energy band gap of about 1.45 eV and an electrical conductivity at room temperature six orders of magnitude higher than that of the binary γ-In₂Se₃ thin films. Received: 9 July 1999 / Accepted: 25 November 1999 / Published online: 13 July 2000     

Spectroscopic studies of thermal treatment effect on the composition and size of CdS1−xSex nanocrystals in borosilicate glass

The effect of heat treatment parameters on the chemical composition and average size of CdS_1−xSe_x nanocrystals obtained in borosilicate glass by diffusion-limited growth is studied by optical absorption and Raman scattering spectroscopy. An increase of selenium content from 0.75 to 0.83 in the nanocrystals with the heat treatment temperature and duration is observed. Three lowest-energy optical transitions in CdS_1−xSe_x nanocrystals are assigned to corresponding electronic transitions based on the observed dependence of the confinement-related absorption maxima on the nanocrystal size.     

Characterization of CdS1−xSex thin films by chemical bath deposition technique

The cadmium sulfo selenide CdS_1?xSe_x thin films were chemical bath deposited in aqueous media onto coated glass substrates. As-deposited CdS_1?xSe_x thin films were annealed at 350 °C in air for 30 min. The structural, morphological, compositional and optical properties of deposited CdS_1?xSe_x thin films were studied using X-ray diffractometer (XRD), scanning electron microscopy (SEM), Energy dispersive analysis by X-ray (EDAX), and UV-Vis-NIR spectrophotometer respectively. X-ray diffraction patterns of CdS_1?xSe_x thin films reveal the polycrystalline nature and hexagonal structure. The microstructural parameters such as crystallite size (D), micro strain (?), and dislocation density were calculated and found to depend on compositions. The surface morphology and grain size are found to be influenced with the annealing temperature. The presence of Cd, S and Se of the CdS_1?xSe_x thin films and the composition of CdS_1?xSe_x thin film are estimated by EDAX analysis. The optical transmittance and absorption spectra were recorded in the range 400–2500 nm. The band gap of the CdS_1?xSe_x thin films is found to decrease from 2.5 eV to 1.75 eV.     

生长在GexSi1-x(001)衬底上应变GaAs层的价电子能带结构与光学性质

采用紧束缚方法对生长在Ge_xSi_1-x(001)衬底上的应变ＧａＡｓ层的价电子能带结构和空穴的三次非线性光学极化率x⁽³⁾进行了计算结果表明，由于应变的存在，使ＧａＡｓ层的空穴有效质量和价带态密度变小，而使偏振方向在（００１）面内的三次非线性光学极化率x_xxxx⁽³⁾变大． 关键词：     

Spectral dependence of the optical absorption temperature coefficient of CdS1−xSex nanocrystallites embedded in a silicate glass

The absorption temperature coefficient of CdS_1−xSe_x nanocrystallites embedded in a silicate glass has been studied in the temperature range above room temperature at different technological regimes and sizes of nanocrystals. To understand the optical properties of silicate glasses with semiconductor nanocrystallites, especially that at the initial stage of their formation, it is necessary to include the structural changes occurring in the nanocrystals during the heat treatment.     

Confined acoustic modes and spectral determination of network connectivity: Raman signatures of nanometric structure in g-GexSe1−x

Low-temperature Raman scattering results are presented on three glass compositions of Ge_xSe_1−x (15, 20, and 27 At. Ge%), and conciled with their reported structural data. The acoustic range is marked by the absence of Boson peak, and features discrete modes corresponding to nanometric dynamic aggregates. First sharp diffraction peak (FSDP) in structure factor S(k), due to Ge-Ge correlations brought about by shared Ge[Se_1/2]₄ tetrahedra medium-range structures, signifies 3D networking of Se-chains. A measure of volume-fraction of these entities determined from the FSDP area, and their number density ρ_MRS∝(k³Area)_FSDP is found to relate directly to the network connectivity, defined from optical Raman spectra in terms of the degree of cross-linking of Se-chains.     

X-ray diffraction and optical studies of CdS1−x Sex solid solutions with stacking faults

The existence in CdS_1?x Se_x crystals (with x=0.10–0.50) of crystalline regions with stacking faults (SF) was first demonstrated by x-ray diffraction and optical methods. X-ray diffraction studies showed SF to be present in all the samples investigated, but in different concentrations. The effect of SF present in CdS_1?x Se_x solid solutions of different compositions on their exciton reflectance and photoluminescence (PL) spectra has been studied. Crystals with high SF concentrations were found to exhibit new exciton bands, which are manifested in reflectance and PL spectra. In the CdS_1?x Se_x phase with SF, resonant emission due to free excitons and the corresponding phonon replicas have been observed. The effect of reabsorption, which can bring about a change in the zero-phonon emission line shape (doublet formation), as well as affect the intensity ratios of the zero-phonon line to the phonon replicas, has been analyzed. It is pointed out that the variation with temperature of the shape of the SF-induced PL exciton line indicates its complex structure, with the constituents of this structure varying in intensity with increasing temperature.     

CdxHg1－xTe/SiO2固溶体微晶掺杂玻璃三阶非线性光学性质的

本文首次报道了对采用溶胶凝胶和原位生长工艺制备的Cd_xHg_1-xTe/SiO₂固溶体微品掺杂玻璃进行的三阶非线性光学性质实验研究及其结果。利用回返式简并四波混频技术,测得该固溶体掺杂玻璃的三阶非线性极化率的值为10^-12esu量级。此结果比纯SiO₂基体提高了2个数量级。表明该固溶体掺杂玻璃三阶非线性明显增强,在同样条件下,测得CS₂的三阶非线性极化率x⁽³⁾为(1.7±0.2)×10^-12esu,与国际上报道完全一致。     

Toward a Raman/FORS discrimination between Art Nouveau and contemporary stained glasses from CdSxSe1 − x nanoparticles signatures

CdS_xSe_{1 − x} quantum dots received considerable attention in academic studies and as cut‐off filters and indirect‐gap semiconductors. These later compounds have also been used for artistic purposes to produce colored glass since the 1920s thanks to their bright colors. Because non‐invasive conditions are now mandatory when considering objects belonging to the cultural heritage, the use of Raman and fiber optics reflectance spectroscopy has been identified as potential ones to obtain information about the nanostructure of six samples of historical glass produced between the late 1920s and modern days. The average elemental composition of the nanocrystals has been deduced processing both optical and vibrational data, and the result arising has been compared taking into account the several factors affecting the experimental results. The diffusion of zinc inside the nanocrystals has also been questioned by the shift caused on the CdS‐ and CdSe‐like phonon band wavenumber and on the absorption edge wavelength. An investigation of the size distribution and crystallinity of CdS_xSe_{1 − x} nanoparticles has been also performed considering those parameters that are mainly influenced by the disorder of the system, such as the extent of the Urbach tail and the Raman bandwidth. Thanks to the results obtained, discrimination between the more recent glass and the older Art Nouveau ones has been verified, leading to the identification of a useful analytical protocol for conservation purposes. Copyright © 2015 John Wiley & Sons, Ltd.     

近场光学显微镜研究CdS0.65Se0.35纳米带空间分辨光致荧光谱

通过热蒸发方法成功制备出CdS_0.65Se_0.35纳米带，得到的纳米带表面光滑，宽度厚度均一，表现出很高的结晶质量.使用近场光学显微镜对纳米带室温下的带边荧光波导和光致荧光近场光谱进行研究.发现CdS_0.65Se_0.35纳米带呈现良好的光波导的特性；同时通过近场光学显微镜得到的空间分辨光谱，发现随着传播距离的增大，纳米带的光致荧光光谱有持续的红移现象.这种光谱红移现象是带间跃迁过程中带尾态的吸收效应引起的，并作了光谱带尾态吸收的理论模拟与实验结果进行比较.光波导传输过程中光谱的变化反映了信息在整个传导过程中的情况，体现了信息传递过程中的稳定性和有效性.三元合金材料CdS_0.65Se_0.35纳米带的波导和光谱性质研究，对于其他组分可调的三元合金纳米结构的制备和研究，及发展新型的纳米功能器件有重要意义.     

Linear and nonlinear optical properties of semiconductor particles

Abstract

The field of nonlinear optics is briefly introduced, followed by a review of quantum size effects in small semiconductor particles, with special reference to the linear and nonlinear optical properties. Experimental methods, especially the “laser induced grating” technique are described. Semiconductor (CdS _x Se_1?x ) doped glasses are examined, both the commercially available niters and a specially made experimental CdSe doped glass. Both linear and nonlinear optical properties are discussed. Colloidal and polymers systems are also briefly discussed.     

Hydrothermal Synthesis of High-Quality Thiol-Stabilized CdTexSe1-x Alloyed Quantum Dots

Alloyed semiconductor quantum dots (QDs) enriched the synthetic routes for engineering materials with unique structural and optical properties. High-quality thiol-stabilized CdTe_xSe_1-x alloyed QDs were synthesized through a facile and economic hydrothermal method at 120 °C, a relatively low temperature. These water-soluble QDs were prepared using different capping agents including 3-mercaptopropionic acid (MPA) and L-cysteine (L-Cys). The photoluminescence (PL) intensity and stability of L-Cys-capped CdTe_xSe_1-x QDs were found to be higher than that of MPA-stabilized ones. The molar ratios of Se-to-Te upon preparation were adjusted for investigating the effect of composition on the properties of the resulting QDs. We also investigated the effect of the pH value of the reaction solution on the growth kinetics of the alloyed CdTe_xSe_1-x QDs. The resulting CdTe_xSe_1-x QDs were characterized by UV–vis absorbance and PL spectroscopy, powder X-ray diffraction, and transmission electron microscopy. Being coated with a CdS inorganic shell, the PL intensity and stability of the CdTe_xSe_1-x/CdS core-shell QDs were drastically enhanced, accompanied by the red-shift of the PL peak wavelength. Owing to the unique optical properties, the QDs hold great potential for application and have to be further exploited.     

Substitutional sites of Co ions in CuGa1−xAlxSe2:Co crystals

The substitutional sites of Co²⁺ ions in Co²⁺-doped CuG_1−xAl_xSe₂ (including CuGaSe₂ where x=0 and CuAlSe₂ where x=1) semiconductors are studied by analyzing the composition x dependence of optical spectral parameters reported in the previous literature for these materials. From the studies, we suggest that Co²⁺ occupy I-group cation site rather than III-group cation site. The suggestion is discussed.     

Direct observation of localized exciton states in CdS<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Se<Subscript>x</Subscript> solid solutions

A system of isolated localized exciton states corresponding to particular energies from the tail of the density of states is observed in CdS_1?xSe_x crystals. From an analysis of the obtained photoluminescence excitation spectra, the boundary between the free and localized excitons and the length of the tail region of the density of localized states that make an essential contribution to radiative recombination are determined. It is shown that the localized and free excitons prove to be separated and represent two exciton subsystems. The energies of actual optical photons are accurately determined to be 23.6±0.2 and 35.6±0.3 meV for CdS_0.70Se_0.30 and 20.7±0.2 and 31.4±0.3 meV for CdS_0.50Se_0.50.     

Third-order nonlinear optical properties of GeSe2-Ga2Se3-PbI2 glasses

The third-order nonlinear optical (NLO) properties of new selenium-based GeSe₂-Ga₂Se₃-PbI₂ glasses have been measured using the optical Kerr effect (OKE) technique, with picosecond and femtosecond laser pulses. The 0.70GeSe₂-0.15Ga₂Se₃-0.15PbI₂ glass has the largest third-order optical nonlinear susceptibility in GeSe₂-Ga₂Se₃-PbI₂ glass system with χ⁽³⁾ of 5.28×10¹² esu. In addition, the response time of glasses is sub-picosecond, which is predominantly associated with electron cloud. Local structure of the glasses has been identified by using Raman studies, while the origins of the observed nonlinear optical response are discussed. The [Ge(Ga)Se₄] tetrahedral and lone-pair electrons from highly polarizable Pb atom in glasses play an important role in enhanced NLO response. These results as well as their good chemical stability indicate that GeSe₂-Ga₂Se₃-PbI₂ glasses are promising materials for photonic applications of third-order nonlinear optical signal processing.