Beta-induced reduction in Cu/Si-structure adhesion

The effect of low-flux (I ～ 1.8 × 10⁵ cm^?2 s^?1) β irradiation on the process of the delamination of thin copper films (with a thickness of ～100 nm) from a silicon substrate under indentation by a Berkovich pyramid is studied. It is revealed that irradiation with a fluence of F = 3.24 × 10¹⁰ cm^?2 leads to an increase in the perimeter and area of the copper-film delaminations formed upon penetration of the indenter. This indicates a β-induced reduction in adhesion in the Cu/Si structure.     

Superior tolerance of Ag/Ni multilayers against Kr ion irradiation: an in situ study

Monolithic Ag and Ni films and Ag/Ni multilayers with individual layer thickness of 5 and 50?nm were subjected to in situ Kr ion irradiation at room temperature to 1 displacement-per-atom (a fluence of 2?×?10¹⁴?ions/cm²). Monolithic Ag has high density of small loops (4?nm in diameter), whereas Ni has fewer but much greater loops (exceeding 20?nm). In comparison, dislocation loops, ～4?nm in diameter, were the major defects in the irradiated Ag/Ni 50?nm film, while the loops were barely observed in the Ag/Ni 5?nm film. At 0.2?dpa (0.4?×?10¹⁴?ions/cm), defect density in both monolithic Ag and Ni saturated at 1.6 and 0.2?×?10²³/m³, compared with 0.8?×?10²³/m³ in Ag/Ni 50?nm multilayer at a saturation fluence of ～1?dpa (2?×?10¹⁴?ions/cm²). Direct observations of frequent loop absorption by layer interfaces suggest that these interfaces are efficient defect sinks. Ag/Ni 5?nm multilayer showed a superior morphological stability against radiation compared to Ag/Ni 50?nm film.     

Formation of bubbles and blisters in hydrogen ion implanted polycrystalline tungsten

ABSTRACT

Tungsten (W) has been regarded as one of the most promising plasma facing materials (PFMs) in fusion reactors. The formation of bubbles and blisters during hydrogen (H) irradiation will affect the properties of W. The dependence of implantation conditions, such as fluence and energy, is therefore of great interest. In this work, polycrystalline tungsten samples were separated into two groups for study. The thick samples were implanted by 18?keV H₃⁺ ions to fluences of 1?×?10¹⁸, 1?×?10¹⁹ and 1?×?10²⁰ H⁺/cm², respectively. Another thick sample was also implanted by 80?keV H₂⁺ ions to a fluence of 2?×?10¹⁷ H⁺/cm² for comparison. Moreover, the thin samples were implanted by 18?keV H₃⁺ ions to fluences of 9.38?×?10¹⁶, 1.88?×?10¹⁷ and 5.63?×?10¹⁷ H⁺/cm², respectively. Focused ion beam (FIB) combined with scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used for micro-structure analysis, while time-of-flight ion mass spectrometry (ToF-SIMS) was used to characterize the H depth profile. It is indicated that bubbles and blisters could form successively with increasing H⁺ fluence. H bubbles are formed at a fluence of ～5.63?×?10¹⁷ H⁺/cm², and H blisters are formed at ～1?×?10¹⁹ H⁺/cm² for 18?keV H₃⁺ implantation. On the other hand, 80?keV H₂⁺ ions can create more trapping sites in a shallow projected range, and thus enhancing the blisters formation with a relatively lower fluence of 2?×?10^17?H⁺/cm². The crack-like microstructures beneath the blisters are also observed and prefer to form on the deep side of the implanted range.     

Induced absorption in yttrium aluminium perovskite crystals irradiated by 12C and 235U ions

The present work is devoted to investigation of optical absorption in pure and neodymium-doped YAlO₃ (YAP) single crystals in the spectral range 0.2–1.1 μm induced by the influence of ¹²C ions irradiation with energy 4.50 MeV/u (MeV per nucleon) and a fluence 2 × 10⁹ cm^?2 or of ²³⁵U ion irradiation with energy 9.35 MeV/u and a fluence 5 × 10¹¹ cm^?2. The induced absorption in the case of ¹²C ions irradiation is caused by recharging of point growth defects and impurities under the radiation influence. After irradiation by ²³⁵U ions with fluence 5 × 10¹¹ cm^?2 the strong absorption rise is probably caused by contribution of the lattice destruction as a result of heavy ion bombardment.     

Influence of the defect state of samples on the luminescence spectra of CdS single crystals irradiated by electrons

The photoluminescence spectra of CdS single crystals irradiated by electrons (E = 1.2 MeV, Φ = 2×10¹⁷ cm^?2) are investigated in the visible and near-infrared regions of electromagnetic radiation. Some samples of the CdS single crystals are preliminarily irradiated by neutrons (E = 2 MeV, Φ = 2 × 10¹⁸ cm^?2) with the aim of increasing the concentration of initial structural defects. From analyzing the peak intensities of photoluminescence in the irradiated single crystals at the wavelengths λ_m = 0.720, 1.030, and 0.605 μm, it is concluded that the CdS samples with a low concentration of structural defects in the initial state possess the highest resistance to electron radiation. It is assumed that the observed transformation of the photoluminescence spectra of the imperfect CdS single crystals subjected to electron irradiation is determined by either the mechanisms of subthreshold defect formation or the transformation of the defect complexes in elastic and electric fields near the large structural damages of the crystal lattice.     

Small-angle neutron scattering studies on the structure of radiation defects in neutron-irradiated synthetic quartz

The supra-atomic structure of single crystals of synthetic quartz with a dislocation density of 54 cm^?2 in their initial state and after irradiation in a VVR-M reactor by fast neutrons with the energy, E _n > 0.1 MeV, at fluences of 2.3 × 10¹⁹ and 4.5 × 10¹⁹ N/cm², has been studied by the method of small-angle thermal neutron scattering. It has been established that fast neutrons create point, linear, and bulk defects throughout the entire material. It has been shown that extended defects have a significant integral length per volume unit equal to ??3 × 10¹¹ cm/cm³, and can form a consolidated network in the sample with a cell size of ??30 nm, through the channels of which the migration of impurity atoms and molecules is possible.     

Field ion microscopy of cascades of atomic displacements in metals and alloys after various types of irradiation

Experimental results on atomic-spatial investigation of radiative defect formation in surface layers of materials, initiated by neutron bombardment (of Pt, E > 0.1 MeV) and ion implantation (in Cu₃Au: E = 40 keV, F = 10¹⁶ ion/m², j = 10^?3 A/cm²), are considered. Quantitative estimates are obtained for the size, shape, and volume fraction of cascades of atomic displacements formed under various types of irradiation in the surface layers of the materials. It is shown that the average size of radiation clusters after irradiation of platinum to a fast neutron fluence of 6.7 × 10²² m^?2 (E > 0.1 MeV) is about 3.8 nm. The experimentally established average size of a radiation cluster (disordered zone) in the alloy after ion bombardment is 4 × 4 × 1.5 nm.     

Defects and the structure of a manganite La0.85Sr0.15MnO3 crystal

Defects in a ferromagnetic crystal of manganite La_0.85Sr_0.15MnO₃ were created by irradiation with fast neutrons (E > 0.1 MeV). Fast neutrons produce defect clusters in a crystal lattice. The volume fraction of the clusters in the crystal after irradiation to a dose F = 2 × 10¹⁹ cm^?2 (T _irr = 340 K) was ?40%. The structural and magnetic states of the modified manganite were studied using thermal-neutron diffraction and magnetic measurements. It was revealed that neutron irradiation of a crystal suppresses the cooperative Jahn-Teller effect and the initial charge modes and decreases the temperature of ferromagnetic ordering. Under irradiation with fast neutrons, the crystalline structure of the manganite changes from the orthorhombic O′ to the pseudocubic O* phase. Arguments are advanced in favor of the specific features of the irradiated-manganite structural state being determined by long-wavelength strains induced in the crystal by antisite defects.     

Influence of Na-related defects on ArF laser absorption in CaF2

ArF laser pulse transmission through commercial high purity CaF₂ is determined by measuring the energy of each pulse before and behind the sample up to an incident fluence H of 10 mJ/cm². The steady state transmission of ArF laser pulses decreases with increasing fluence. The related absorption coefficients α ^st(H) are proportional to H and rationalized by effective 1- and 2-photon absorption coefficients 2.4×10^?4 cm^?1≤α ^eff≤16.8×10^?4 cm^?1 and 1.7×10^?9 cm?W^?1≤β ^eff≤9.3×10^?9 cm?W^?1, respectively. The α ^eff and β ^eff values increase with the Na content of the CaF₂ samples as identified by the fluorescence of Na-related M _Na centers at 740 nm. This relation is simulated by a rate equation model describing the ArF laser induced M _Na generation in the dark periods between the laser pulses and their annealing during laser irradiation. M _Na generation starts with intrinsic 2-photon absorption in CaF₂, yielding self-trapped excitons (STE). These pairs of F and H centers move upon thermal activation and the F centers combine with F _Na to form M _Na centers. M _Na annealing occurs by its photo dissociation into a pair of F and F _Na centers.     

Silicon negative ion implantation induced vacancy defects in thermally grown SiO2 thin films

ABSTRACT

Thermally grown SiO₂ thin films on a silicon substrate implanted with 100?keV silicon negative ions with fluences varying from 1?×?10¹⁵ to 2?×?10¹⁷ ions cm^?2 have been investigated using Electron spin resonance, Fourier transforms infrared and Photoluminescence techniques. ESR studies revealed the presence of non-bridging oxygen hole centers, E′-centers and P_b-centers at g-values 2.0087, 2.0052 and 2.0010, respectively. These vacancy defects were found to increase with respect to ion fluence. FTIR spectra showed rocking vibration mode, stretching mode, bending vibration mode, and asymmetrical stretching absorption bands at 460, 614, 800 and 1080?cm^?1, respectively. The concentrations of Si–O and Si–Si bonds estimated from the absorption spectra were found to vary between 11.95?×?10²¹ cm^?3 and 5.20?×?10²¹ cm^?3 and between 5.90?×?10²¹ cm^?3 and 3.90?×?10²¹ cm^?3, respectively with an increase in the ion fluence. PL studies revealed the presence of vacancies related to non-bridging oxygen hole centers, which caused the light emission at a wavelength of 720?nm.     

Swift heavy ion provoked structural, optical and electrical properties in SnO2 thin films

SnO₂ thin films grown on glass substrates at 300 ^°C by reactive thermal evaporation and annealed at 600 ^°C were irradiated by 120 MeV Ag⁹⁺ ions. Though irradiation is known to induce lattice disorder and suppression of crystallinity, we observe grain growth at a certain fluence of irradiation. X-ray diffraction (XRD) revealed the crystalline nature of the films. The particle size estimated by Scherrer’s formula for the irradiated films was in the range 10–25 nm. The crystallite size increases with increase in fluence up to 1×10¹² ions?cm^?2, whereas after that the size starts decreasing. Atomic force microscope (AFM) results showed the surface modification of nanostructures for films irradiated with fluences of 1×10¹¹ ions?cm^?2 to 1×10¹³ ions?cm^?2. The UV–visible spectrum showed the band gap of the irradiated films in the range of 3.56 eV–3.95 eV. The resistivity decreases with fluence up to 5×10¹² ions?cm^?2 and starts increasing after that. Rutherford Backscattering (RBS) reveals the composition of the films and sputtering of ions due to irradiation at higher fluence.     

Effect of electron irradiation on the structure and properties of the MgB2 superconductor

This paper reports on the results of an investigation into the effect of irradiation of the Bardeen-Cooper-Schriefer superconductor MgB₂ by electrons with a mean energy ē ～ 10 MeV at low doses (0 ≤ Φt ≤ ～5 × 10¹⁶ cm^?2) on the lattice parameters, the intensity and width of diffraction lines, the superconducting transition temperature T _c , and the temperature dependence of the resistivity ρ(T) in the normal state. The results of structural investigations have revealed regularities in the defect formation in the magnesium and boron sublattices of the MgB₂ compound as a function of the electron fluence. At the initial stage, irradiation leads to the formation of vacancies, originally in the magnesium sublattice and then in the boron sublattice. For fluences Φt ≥ ～1 × 10¹⁶ cm^?2, vacancies are formed in both sublattices. The evolution of the electrical and physical properties [T _c , ρ_{273 K}, residual resistivity ratio RRR = ρ_{273 K}/ρ_{50 K}, parameters of the dependence ρ(T)] under electron irradiation is in agreement with the regularities revealed in the formation of radiation-induced defects in the crystal lattice of the MgB₂ compound.     

Structure of defects in Pt induced by neutron and ion irradiation

The effect of formation of a nanocrystalline structure in the near-surface layer of platimun (99.99%) as a result of 30-keV Ar ion bombardment up to fluences of 10¹⁶–10¹⁷ cm^?2 was discovered by the direct method of field ion microscopy. The spatial distribution and structure of radiation damage in Pt was established in the case where Pt is bombarded by fast neutrons (E > 0.1 MeV) up to fluences of 6.7 × 10¹⁷ and 3.5 × 10¹⁸ cm^?2 in the RWW-2M reactor at a temperature of ～310 K.     

Radiation damage in triglycine sulphate due to fast neutron irradiation

Abstract

The change in electrical properties of TGS crystals due to induced defects created by fast neutron irradiation of two different energies (2 and 14 MeV) and different integrated neutron fluxes have been studied in the vicinity of phase transition. It is observed that the electrical conductivity increases with increase of neutron fluence up to 1.7 × 10¹⁰ n · cm^?2 and the values of the relative change of electrical conductivity in case of 2 MeV are higher than that of 14 MeV neutrons at the same neutron fluence (φ)     

Effect of swift heavy ion irradiation on dilute Fe-doped Sb0.95Se0.05 magnetic semiconductor

A thin film of dilute Fe (0.008)-doped Sb_0.95Se_0.05 alloy was grown on silicon substrate using the thermal evaporation technique. This film was irradiated with swift heavy ions (SHIs) Ag⁺¹⁵ having 200?MeV energy at ion fluences of 1?×?10¹² and 5?×?10¹² ions per cm², respectively. The thickness of the thin film was ～500?nm. We study the effect of irradiation on structural, electrical, surface morphology and magnetic properties of this film using grazing angle XRD (GAXRD), DC resistivity, atomic force microscopy (AFM) and magnetic force microscopy (MFM), respectively. GAXRD suggests that no significant change is observed in this system due to SHI irradiation. The average crystallite size increases with fluence, whereas the AFM image shows the rms roughness decreases due to irradiation with respect to the un-irradiated thin film. The MFM image shows that the magnetic interaction in irradiated film decreases due to the irradiation effect. Although the un-irradiated sample shows metal to semiconducting transition, but after irradiation with fluence of 5?×?10¹² ions per cm², the sharpness of the metal to semiconducting phase transition is observed to increase dramatically at ～300?K. This characteristic of the thin film makes it a promising candidate for an electrical switching device after irradiation.     

Supra-atomic structure of radiation-induced defects in synthetic quartz from neutron scattering data

The nanostructure of synthetic quartz samples irradiated with fast reactor neutrons with energies E n > 0.1 MeV has been studied by small-angle neutron scattering. The fluences are varied from 10¹⁷ to 2 × 10²⁰ neutrons/cm². In the quartz samples irradiated with fluences higher than 10¹⁷ neutrons/cm², point, extended (dislocation loops), and volume defects, namely, thermal peaks up to 50 nm in radius, are observed over the entire volume. At a fluence of 2 × 10²⁰ neutrons/cm², the total fraction of the formed defect regions, where the material is in a noncrystalline state, exceeds 10% of the sample volume. The data on the formation of a metamikt glassy phase in the quartz sample have been obtained.     

Radiation enhanced diffusion in UO2 and (U,Pu)O2

Abstract

The radiation enhanced diffusion (coefficient D*) of U-233 and Pu-238 in UO₂ and (U, Pu)O₂ with 2.5 and 15% Pu was measured during fission in a nuclear reactor. Normal diffusion sandwiches with a thin tracer layer were used. A radio-frequency furnace allowed the temperatures to be varied between 130 and 1400°. Neutron fluxes (7 × 10¹² to 1.2 × 10¹⁴ n cm^?2 s^?1) and irradiation times (56 to 334 h) were also varied to cover ranges of fission rates [Fdot] between 7× 10¹¹ and 6.4 × 10¹³ f cm^?3 s^?1 and of doses F between 4.2 × 10¹⁷ and 3.1 × 10¹⁹ f cm³. Below ～1000°, D* was completely athermal and increased linearly with [Fdot]. It was described by D* = A[Fdot] with A = 1.2× 10^?29cm⁵. A possible temperature dependence was indicated between ～1000and 1200°. The results are explained in terms of thermal and pressure effects of fission spikes and are related with other studies of radiation damage as well as with technologically interesting processes occurring in UO₂ during irradiation.     

An investigation on the variations in properties of Ni+ irradiated ZnO thin films

ZnO thin films, irradiated by 80 MeV Ni⁺ ions, were analysed with the help of different characterization techniques like X-ray diffraction, optical absorption, transmission, photoluminescence (PL), electrical resistivity, photosensitivity (PS) and thermally stimulated current (TSC) measurements. Crystallinity and absorption edge were hardly affected by irradiation. PL spectrum of pristine sample showed a broad peak at 517 nm, whereas irradiated film had two emissions at 517 and 590 nm. Intensity ratio between these two emissions (I₅₁₇/I₅₉₀) decreased with the fluence, and finally at a fluence of 3×10¹³ ions/cm², the emission at 517 nm completely disappeared. Electrical resistivity of the sample irradiated with a fluence of 1×10¹³ ions/cm² drastically increased. However, on increasing the fluence to 3×10¹³ ions/cm², resistivity decreased, probably due the onset of hopping conduction through defects. PS also decreased due to irradiation. TSC measurements on pristine sample could reveal only one defect level at 0.6 eV, due to interstitia1 zinc (Zn_I). But, irradiation at a fluence of 1×10¹² ions/cm², resulted in three different defect levels as per TSC studies. Interestingly, the sample irradiated at a fluence of 3×10¹³ ions/cm² had only one defect level corresponding to a deep donor. The possible origin of these defect levels is also discussed in the paper.     

50 MeV Li3+ ion irradiation effect on structural, electrical, and dielectric properties of PVA-based nanocomposite polymer electrolytes

Nanocomposite polymer electrolyte thin films of polyvinyl alcohol (PVA)-orthophosphoric acid (H₃PO₄)-Al₂O₃ have been prepared by solution cast technique. Films are irradiated with 50 MeV Li³⁺ ions having four different fluences viz. 5?×?10¹⁰, 1?×?10¹¹, 5?×?10¹¹, and 1?×?10¹² ions/cm². The effect of irradiation on polymeric samples has been studied and characterized. X-ray diffraction spectra reveal that percent degree of crystallinity of samples decrease with ion fluences. Glass transition and melting temperatures have been also decreased as observed in differential scanning calorimetry. A possible complexation/interaction has been shown by Fourier transform infrared spectroscopy. Temperature-dependent ionic conductivity shows an Arrhenius behavior before and after glass transition temperature. It is observed that ionic conductivity increases with ion fluences and after a critical fluence, it starts to decrease. Maximum ionic conductivity of ～2.3?×?10^?5 S/cm owing to minimum activation energy of ～0.012 eV has been observed for irradiated electrolyte sample at fluence of 5?×?10¹¹ ions/cm². The dielectric constant and dielectric loss also increase with ion fluences while they decrease with frequency. Transference number of ions shows that the samples are of purely ionic in nature before and after ion irradiation.     

Optical spectra of (CdF2)0.9(InF3)0.1 semiconductor solid solutions

The differences in the optical spectra of CdF₂:In semiconductors with bistable DX centers (concentrated (CdF₂)_0.9(InF₃)_0.1 solid solutions) and “standard” samples with a lower impurity concentration used to record holograms are discussed. In contrast to the standard samples, in which complete decay of two-electron DX states and transfer of electrons to shallow donor levels may occur at low temperatures, long-term irradiation of a (CdF₂)_0.9(InF₃)_0.1 solid solution by UV or visible light leads to decay of no more than 20% deep centers. The experimental data and estimates of the statistical distribution of electrons over energy levels in this crystal give the total electron concentration, neutral donor concentration, and concentration of deep two-electron centers to be ～5 × 10¹⁸ cm^?3, ～9 × 10¹⁷ cm^?3, and more than 1 × 10²⁰ cm^?3, respectively. These estimates show that the majority of impurity ions are located in clusters and can form only deep two-electron states in CdF₂ crystals with a high indium content. In this case, In³⁺ ions in a limited concentration (In³⁺ (～9 × 10¹⁷ cm^?3) are statistically distributed in the “unperturbed” CdF₂ lattice and, as in low-concentrated samples, form DX centers, which possess both shallow hydrogen-like and deep two-electron states.