Effect of correlation in the impurity defect distribution on the micromechanical properties of GaAs: Te single crystals |
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| Authors: | V A Bogdanova N A Davletkil’deev M M Nukenov N A Semikolenova |
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| Institution: | (1) Omsk State University, pr. Mira 55, Omsk, 644077, Russia;(2) Institute of Semiconductor Physics, Omsk Branch, Siberian Branch, Russian Academy of Sciences, Omsk, 644018, Russia |
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| Abstract: | The micromechanical properties of Te-doped GaAs single crystals with free carrier density n 0 = 1017?5 × 1018 cm?3 were studied. The obtained data are as follows: the nonmonotonic concentration dependences of the microhardness, the lengths of dislocation rosette rays, the densities of dislocations, and the position and half-width of the Raman line of a transverse optical phonon. The data are interpreted in terms of spatial correlation in the impurity defect distribution. |
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