PrLa1—xSrxCuOz和Pr1-yLaCeyCuOz的超导电性

利用固相反应法制备了分别掺杂Sr和Ce的PrLaCuOz系列氧化物．XRD衍射结果表明，Sr的掺杂形成了典型的空穴型掺杂的T-214结构，Ce的引入形成了典型的电子型掺杂的T＇-214结构．利用Quantum Design PPMS-VSM对所有样品的进行了M-T测量（5～300K；100高斯和5000高斯）．临界温度随掺杂量变化的关系表明，当0．08≤z≤0．30时，PrLa1-xSrxCuOx（PLSCO）具有超导电性，并在x=0．15时达到最高值Tcmax=26K；当0．08≤y≤0．15时，Pr1-yLaCey与CuOz（PLCCO）具有超导电性，Tcmax=24．9K出现在y=0．12处．磁性质测量还表明，Sr的引入对体系的磁矩影响不大，而Ce的掺入使样品在35K附近出现了反铁磁转变．     

稀土元素Ce/Eu共掺杂对Bi-2201相微结构和超导电性的影响

我们采用传统固相反应法成功制备了系列多晶样品Bi_(1.6)Pb_(0.4)Sr_(2-x)(Ce_(1-y)Eu_y)_xCuO_z(x=0.1,0.2;0≤y≤1),并且用XRD和电阻率分别对其晶体结构和输运性质进行了研究.XRD结果表明,当Ce/Eu共掺杂量x=0.1时,样品成单相,当x=0.2时,会有杂相出现;随着Eu掺杂量的增加及相应Ce掺杂量的减少,样品的晶胞参数a,b稍有增大,晶胞参数c则显著增大;电阻率测量表明,随着Eu掺杂量的增加,样品的超导转变温度Tocnset可以提高到21K,Ce掺杂对超导电性有一定的抑制作用,而Eu掺杂却能够改善超导电性,其中Tconset随Ce/Eu掺杂量的变化可以用电荷转移模型进行合理解释.     

Mn掺杂对La_(0.925)Pr_(0.925)Sr_(0.15)CuO_4磁性和超导电性的影响

La0.925Pr0.925Sr0.15Cu1-xMnxO4+y(LPSCMO)多晶样品采用传统的固相反应法制备.X射线衍射表明:LP-SCMO具有典型的空穴搀杂的T-214相的结构.磁化率测量显示:Mn掺杂在x≤0.05范围内具有超导转变;Tc随x的增大逐渐减小.对x≥0.10的样品,在低温区(大约10K)存在反铁磁转变,并且转变温度变化不大.对于x≥0.15的样品,在220K附近存在类似巨磁阻材料的铁磁性转变,并对其产生的机理进行了分析.     

电子型超导体Pr1.85Ce0.15CuO4-δ中Cu位V替代对超导电性的影响

本文研究了Pr1.85Ce0.15CuO4-δ(PCCO)中V4 离子替代Cu2 离子后对其超导电性的影响.Pr1.85Ce0.15Cu1-xVxO4-δ(x=0～0.10)电阻率测量结果显示:微量(x≤0.04)V4 离子替代Cu2 离子可以改善样品的超导电性;随着替代量的增加,体系的超导电性逐渐被抑制,x=0.08时超导电性消失.我们主要从样品的微观结构和载流子浓度两个方面的变化分析了V4 替代Cu2 对PCCO超导电性的影响机制.霍尔系数实验结果表明,替代量较少时,体系中载流子浓度随着x的增加而增加,有助于超导电性的改善,但是当替代量增加到一定程度时,晶格畸变程度的增大和顶点氧的出现,抑制了超导电性.     

La1-x／2Pr1-x／2SrxCuO4的电输运性质和超导电性

La1-x/2Pr1-x/2SrxCuOy(LPSCO)多晶样品采用传统的固相反应法制备.X射线衍射表明:LPSCO具有典型的空穴搀杂的T-214相的结构.磁化率测量显示:Sr搀杂在0.05≤x≤0.30范围内具有超导转变;Tc随x的增大呈抛物线形式变化,且在x=0.18时达到最大值28K.电阻的测量显示:随搀杂量的增大,系统呈现从绝缘到半导体,最后到金属的导电行为的变化;在欠掺杂区,正常态电阻温度关系符合ρ(T)=ρ0 αT-ClnT;而在过掺杂区,对数项消失.本文从替代所引起的晶体结构和载流子特性变化解释了Sr掺杂样品的电输运行为和超导特性.     

Sr1-xYxCoO3的磁性和电输运性质

采用传统的固相反应法制备了A位Y掺杂的多晶钙钛矿氧化物Sr1-xYxCoO3(x-0～0.30),系统研究了Y掺杂对体系结构、磁性和电输运性质的影响.X射线衍射结果表明室温下体系经过六方对称到立方对称再到四方对称的结构相变,x=0样品为六方结构,空间群为P63/mmc,0.05≤x≤0.15样品为立方对称结构,空间群为Pm3 m,x≥0.20样品为四方对称结构,空间群为I4/mmm,x=0.20时具有最大矫顽场Hc=4.6kOe.体系在外加磁场为1kOe下表现出如下磁性特征:x=0时Jc=163K,随着掺杂量的增加,转变温度呈现上升趋势,同时反铁磁性也随之增强.所有组分均表现出半导体特征,并且观察到复杂的磁电阻(MR)与温度变化关系:所有组分均表现出+MR与-MR共存的特征,当掺杂量为x=0.1时,在T=370K下表现出测量最大磁电阻的绝对值︱MR︳约为17%.Sr1-xYxCoO3样品遵循可变程传到模型,在150K≤T≤400K温度范围内ln(ρ)与T-1/4呈线性关系.     

5d电子掺杂的SmFe_(1-x)Ir_xAsO铁基超导体的合成及物性

通过在SmFeAsO中Fe位上掺入5d过渡金属Ir,得到了一种新的铁基超导体SmFe1-xIrxAsO,当x=0.05时,样品表现出超导电性,超导转变温度为8K,当x=0.15时,超导转变温度达到最大值17.3K.X射线衍射结果表明所有样品均属四方ZrCuSiAs-type结构,SEM结果表明SmFe1-xIrxAsO样品具有片层状形貌特征.随着Ir掺杂量的增大,晶格参数a增大而c减小,结合EDX数据,表明Ir掺入了SmFeAsO晶格当中.     

掺Ce的Bi-2212的低温电输运性质

在小型制冷机上，测量了掺Ce的Bi-2212(Bi2Sr2Ca1-xCexCu2O8 y,x=0.1,0.2,0,3,0.4）样品10K到300K温度范围内的电阻率，随着Ce掺杂浓度x的增加，样品的电输运性质表现出由金属到绝缘体的转变，注意到Ce掺杂的变价性，我们对这灯混坐体系中两相共存的可能性进行了分析和讨论。     

Preparation and Luminescent Properties of Sr3P2-xVxO8∶Eu (0≤x≤2.0)

研究了B位掺杂的Sr3P2-xVxO8(0≤x≤2.0)基质和Eu3+掺杂Sr3-3yEu2yP1.2V0.8O8(0＜y≤0.30)系列样品在紫外光激发下的发光性质.以两种不同紫外激发波长激发Sr3P2-xVxO8基质时,局部最大发光强度似乎与x值间存在周期性变化,且x=0.6和0.8时,Sr3P2-xVxO8样品具有最大发光强度.在Sr3P1.2V0.8O8基质中,Eu3+掺杂的最佳浓度为y=0.20.     

Sr3P2-xVxO8:Eu（0≤x≤2.0）的制备及其发光性能

研究了B位掺杂的Sr3P2-xVxO8(0≤x≤2.0)基质和Eu3+掺杂Sr3-3yEu2yP1.2V0.8O8(0相似文献   

Al(111)/Al_3Li(111)的界面性质

运用基于第一性原理的平面波贋势法,计算研究了Al (111)/Al_3Li (111)的界面性质.结果表明:Al (111)/Al_3Li (111)的界面具有三种原子配位关系结构,其中界面处仍保持与基体Al一致的三明治堆垛构型的界面稳定性最好.计算表明,该结构界面最薄弱层,位于Al_3Li (111)内,其分离功最小(约1.53 J/m~2),强度最弱,而基体Al和Al_3Li内部的强度随着到界面距离的增大而逐渐增强.     

锰原子的二步多光子与三步三光子共振电离研究

激光共振电离技术是痕量分析中的重要手段之一。文章以速率方程理论为基础,对锰原子的激光共振电离过程进行了分析,讨论了电离过程中各级激发光功率密度及激光作用时间对电离效率的影响;提出了根据所要求的电离效率和激光作用时间计算所需要的各激发光或电离激光的功率密度的方法;得到了饱和激发或饱和电离的规律及阈值条件。研究发现,在激光作用时间为10 ns时,锰原子饱和电离的激光强度阈值基本都在108 W·cm-2的量级,只有“1+1”双色双共振低三个量级;而“1+1”和“1+1+1”饱和激发的激光强度阈值则在102～103 W·cm-2量级;并且随着激光作用时间的增加,各过程的饱和激发和饱和电离的激光强度阈值将单调减少。     

Two-photon photoemission from Ni (1 1 0) and (1 1 1) surfaces

Photoemission was observed when the samples were irradiated with photons in the energy range from 2.5 to 3.3 eV from a tunable dye laser with an intensity of 10⁸Wcm^?2. The emission shows a quadratic intensity dependence. The variation with angle of incidence and polarization is different for the two surfaces. The result obtained from the (1 1 0) surface is discussed with help of the band structure as a two-photon surface photoelectric effect.     

Comparing the band structure of Ag(1 1 1) monolayers on Ni(1 1 1) and Ni (0 0 1)

Ag(1 1 1) monolayers prepared on two substrates, Ni(1 1 1) and Ni(0 0 1), were studied with angle-resolved photoemission; their two-dimensional band dispersions were found to be identical within experimental uncertainties. Comparing the present results with those for Ag/Cu(0 0 1), the major difference is just a shift of 0.32 eV in all the binding energies. Thus the band topology of Ag overlayers in these systems is quite insensitive to the electronic and atomic structures of the substrates.     

Structure of the laser annealed Si(1 1 1)-(1 × 1) surface

LEED analysis of the laser annealed Si(1 1 1)-(1 × 1) surface shows that a model with a graphite-like top double layer of atoms with a spacing of 2.95±0.02 Å from the second double layer describes the LEED data as well as the Zehner model, but involves large displacements of the atoms normal to the surface as required by ion scattering results. It is suggested that this model provides a natural interpretation of the low energy He atom scattering data for the Si(1 1 1)-(7 × 7) surface.     

Schottky barriers on diamond (1 1 1)

We have measured Schottky barrier heights Ø_B = 1.3 eV for Au and Ø_B = 1.5 eV for Al on (p-type) diamond(1 1 1)?(1 × 1) using photoelectron spectroscopy with synchroton radiation. These barrier heights yield a barrier index of S = 0.2, which is closer to the values for Si and Ge (S ～ 0.1) than to the value S = 0.4 calculated for jellium on an ideal diamond(1 1 1) surface. After reacting Al with the diamond surface by annealing to 800° C, we find that Ø_B decreases by 0.24 to 1.25 eV.     

Hanle lifetime measurements of SrI 1P1 and CaI 1P1 levels excited by a neutral beam of 1 1S0 helium atoms

A 0.8 keV He(1 ¹S₀) beam was used to coherently excite the ¹P₁ levels of Sr and Ca targets. The coherence appears as an alignment of the excited state with respect to the beam axis. We report here the results of a Hanle measurement, or a zero-field level-crossing experiment, performed on these coherently excited levels. The radiative lifetimes of the SrI ¹P₁ and CaI ¹P₁ levels were measured to be 4.7 ns and 5.3 ns, respectively. These values are in good agreement with conventional Hanle measurements.     

Precise semiconductor nanotubes and nanoshells fabricated on (1 1 0) and (1 1 1) Si and GaAs

In our previous works, we showed that ultrathin epitaxial heterofilms (down to two monolayers for the case of InGaAs/GaAs) can be controllably detatched from substrates and rolled, under the action of internal stresses, into various cylindrical micro- and nanoshells (tubes, scrolls, rings, spirals, etc.). The present review outlines the cornerstone stages in the development of this fabrication technology for semiconductor and metal nanoobjects, including: (1) directional rolling of films yielding 3D micro- and nanoshells of various shapes; (2) assembling of micro- and nanoshells in more complex architectures; (3) super-critical drying of nanoshells, and (4) formation of nanoshells whose sizes can be precisely controlled in three dimensions.With this technology new possibilities that open up for the use of strained films, selectively, grown on uncommonly used (1 1 0) and (1 1 1) surfaces, are presented. The role of mechanical anisotropy in the formation of the 3D nanoshells and the electrical and mechanical properties of formed nanotubes are discussed.     

InAs/GaAs (1 1 1)A heteroepitaxial systems

We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (1 1 1)A substrates by molecular beam epitaxy. In contrast to conventionally used (0 0 1) surfaces, where Stranski–Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system.