热应力对非制冷红外焦平面微桥的影响及控制研究

非制冷红外焦平面阵列的微桥结构在微加工工艺中,由于温度的剧烈变化,在薄膜中产生热应力而引起微桥的变形,将对器件产生不利影响.利用有限元分析方法,对微桥在热应力作用下产生的变形进行了分析,提出了两种控制热应变的途径:1)选择一种低热膨胀系数、低杨氏模量的电极材料;2)在电极材料的表面沉积一层SiNx薄膜.仿真结果表明,两...     

铀表面铝镀层热应力分布

铀是非常活泼的金属，在大气环境中很容易发生腐蚀，通过磁控溅射方法，在铀表面镀铝可以对铀起到很好的防腐蚀效果，但经过磁控溅射以后，薄膜内会产：生应力，从而影响了铀表面铝镀层的结合强度及使用性能。一般认为，薄膜内的应力来源于两个方面：一是热应力，二是生长应力。热应力是由于薄膜与基体热膨胀系数不同经温度变化引起的，而生长应力则来自于薄膜与基体物理性质的不同，以及薄膜中的结构缺陷。对于一种确定结构的膜基体系，生长应力比较固定，而热应力却可以通过磁控溅射工艺进行一定的调整。文中采用热弹塑性有限元分析方法，对铀表面磁控溅射沉积铝镀层的热应力分布进行了研究。     

胶粘光学元件的热应力和变形分析

由于光学元件和装配材料热膨胀系数的不匹配,在环境温度变化时会导致光学元件中产生热应力,并引起光学元件表面产生变形,影响光学系统的性能.针对光学元件的粘接固定方式讨论了连续边缘粘接引起的热应力和变形的分析方程,得出连续边缘粘接无热厚度的解析方程.采用有限元分析软件对胶粘固定光学元件进行了建模和热应力分析,得出光学元件边界...     

热膨胀系数异性轴夹角优化分析

高超声速飞行器需要先进的材料进行热防护,比如增强碳/碳材料.有两种将碳纤维制作成碳/碳球锥外形的工艺,研究表明在每种工艺中,碳/碳块体或碳纤维热膨胀系数异性轴角度对结构热应力影响很大,为此本文发展了一套优化设计方法,对给定的对流加热温度场可以实现球锥热应力的最小化.分析结果表明对于热膨胀系数异性轴角度,存在某些取值点,那时结构热应力分别达到最大和最小值.在异性轴模晕小于同性平面模量的条件下,对于工艺1,如果将球锥对称轴设置成垂直于碳/碳块体的同性平面,可以将热应力减至最小;对于工艺2,如果能将编制面内的碳纤维束异性轴角度取成负值(即指向来流方向),则球锥热应力也可以得到相当程度的减小.     

模压硫系玻璃元件红外增透膜的研制

为满足红外探测系统无热化、高质量成像的需求,在非球面硫系玻璃基底制备3.7～4.8 μm波段增透膜.根据试验要求选取黏结层材料,提高基板与薄膜之间的附着力;利用有限元分析法通过多物理场仿真软件,将温度场与热应力场相结合建立三维模型,分析非球面薄膜的应力分布情况.根据模拟结果对沉积工艺进行优化,采用温度梯度烘烤法降低硫系玻璃基底的热应力,并采用真空原位退火法释放沉积薄膜的应力,解决非球面镜的脱膜问题.所制备的薄膜可以通过MIL-C-48497A标准中的附着力、湿度、中度摩擦等测试,并在3.7～4.8 μm波段的平均透过率为99.12％,满足红外探测系统的指标要求.     

用热应力法研究二氧化碲晶体表面连接层材料的特性

以声光晶体TeO_2为衬底,设计并研制了1 300~3 400nm波段超宽带减反射膜.从薄膜热应力理论出发,建立膜层热应力受力示意图,结合TeO_2晶体的特性和力矩判定方法,采用解析法逆向计算分析薄膜材料的热膨胀系数及杨氏模量.实验验证表明:所制备的膜层附着力在1300~3400nm波段平均透过率为96.8%;在相同工艺条件下,采用连接层所制备的薄膜附着力更好,可以解决脱膜问题,满足相应的附着力检测要求.     

强激光辐照下窗口材料靶传热及热应力破裂的解析分析

用有限Ｈａｎｋｅｌ积分变换法对轴对称强激光束辐照下平面薄靶（或薄膜）传热及热应力分布进行了解析推导，得到了随时间演变的温度场及相应的热应力场的解析解。对比有关实验，对强激光束辐照窗口材料（例如ＭｇＦ２晶体、Ｋ９玻璃）靶引起其脆性热应力破裂进行了分析，详细讨论了激光强度、激光－靶能量耦合系数、辐照时间及光斑尺寸等因素对靶的破坏的影响。     

硅基板和铜基板垂直结构GaN基LED变温变电流发光性能的研究

本文将硅(Si)衬底上外延生长的氮化镓(GaN)基发光二极管(LED)薄膜剥离转移到新的硅基板和紫铜基板上,并获得了垂直结构的LED芯片,对其变温变电流电致发光(EL)特性进行了研究. 结果表明:当环境温度不变时,在13 K低温状态下铜基板芯片的EL波长始终大于硅基板芯片约6 nm,在300 K 状态下随着驱动电流的加大铜基板芯片的EL波长会由大于硅基板芯片3 nm左右而逐渐变为与硅基板芯片重合;当驱动电流不变时,环境温度由13 K升高到320 K,两种基板芯片的EL波长随温度升高呈现S形变化并且波谱逐渐趋于重合;在100 K以下温度时铜基板芯片的Droop效应比硅基板芯片明显,在100 K 以上温度时硅基板芯片的Droop效应比铜基板芯片明显. 可能是由于两种芯片的基板具有不同的热膨胀系数和热导率导致了其变温变电流的EL特性不同. 关键词： GaN 热膨胀系数 内量子效率 热导率     

盐酸掺杂聚苯胺薄膜的隐身性能

将本征态聚苯胺的N-甲基吡咯烷酮溶液浇铸在玻璃基板上,烘干脱去基板后得到自支持本征态聚苯胺薄膜,用HCl气体对薄膜进行掺杂,通过控制掺杂时间来控制掺杂浓度.红外反射率测试结果表明:在大气窗口内,掺杂浓度较低时,薄膜的红外反射率随着掺杂浓度的提高而增加;到达一定掺杂浓度后,反射率会随着掺杂浓度的提高有所降低,最终趋于稳定...     

红外短波/长波分色片的研究

短波红外/长波红外分色片在红外双波段成像光学系统中起着重要的作用。分析了分色片基板和薄膜材料的选择。选定硒化锌为基板,采用Ge,ZnSe和YbF3作为薄膜材料进行了优化设计,并对沉积温度和蒸发速率等工艺条件进行了优化,用电子束蒸发方法制备了该分色片,其反射率和透射率都达到了93%以上,已成功应用于实际光学系统中。     

X-ray reflectivity studies on glass transition of free standing polystyrene thin films

We have studied thermal expansion of free standing polystyrene thin films using X-ray reflectivity to elucidate the glass transition temperature and the thermal expansivity. We found that the glass transition temperature T_g decreased with the film thickness, depending on molecular weight. The reduction in the free standing films is much larger than in the supported films on Si substrate, suggesting that some segmental motions are activated due to free surfaces on both sides in the free standing films. We also found that the thermal expansivity in the glass and the melt decreased with the film thickness. This decrease must be attributable to chain confinement effects.     

Strain relaxation of CdTe films growing on lattice-mismatched substrates

We have deposited CdTe films by laser-assisted epitaxy approach and investigated the influence of substrate and film thickness on the film properties. Grown on Si(001), GaAs(001), and quartz substrates; the CdTe films exhibit preferential orientation along the cubic CdTe(111) direction. When the films are thin (<500 nm), a blueshift of the band gap and splitting of valence bands were observed. These results are attributed to the existence of residual strains induced by mismatch of the film lattice constant with that of the substrate, and by their difference in thermal expansion coefficients. The bulk band-gap energy of 1.5 eV was achieved on the surface of thick CdTe films grown on Si(001) substrate, indicating that strain was almost completely relaxed in this case. Our results demonstrate that by a proper selection of substrate and film thickness it is possible to grow film semiconductors with band gap approaching those of bulk crystals.     

ZnO外延膜与蓝宝石衬底的取向偏差及其弯曲变形

采用常压MOCVD方法在Al2O3(00．1)衬底上生长出了高质量ZnO单晶薄膜。由ZnO(00．2)面和Al2O3(00．6)面及ZnO(10．2)面和Al2O3(11．6)面X射线双晶(w／2θ衍射曲线的相对峰位,得到ZnO外延膜的晶格常数及外延层和衬底间的取向差异角。结果表明外延层和衬底在应力作用下产生了取向差和晶格畸变,并且取向倾斜方向与衬底的切割倾角方向一致;高温直接生长的样品的取向差比有低温缓冲层样品更大,晶格畸变也更严重。高温直接生长的样品弯曲半径小而应力更大;实验测量的应力值和理论计算的热应力值之间存在差异,原因主要是晶格失配应力的存在。有缓冲层的样品由于能更好地弛豫晶格失配引入的应力,热应力所占整个残余应力的比例相对更大。     

Surface Morphological Evolution of Thin Films Under Stress and Capillary Forces

Holes and hillocks can commonly be observed on the surface of thin films after thermal processing. For films deposited on a substrate with a different coefficient of thermal expansion, strains due to thermal expansion mismatch can produce very large stresses. While capillary forces tend to produce a thermal groove at a grain boundary (GB), compressive and tensile stresses can form, respectively, a ridge or a canal at the GB. These phenomena can strongly influence mobility of a GB. The formation of a canal enhances the potential for pinning the GB, whereas the formation of a ridge tends to repel the GB.After a short overview of the theory, analytical and numerical solutions for surface profiles of static and travelling GBs under stress are presented. The results of the computed profiles are compared to experimental surface morphologies in aluminum thin film.     

Transformation behavior of Ni-Mn-Ga/Si(100) thin film composites with different film thicknesses

A series of Ni_51.4Mn_28.3Ga_20.3/Si(100) thin film composites with different film thicknesses varying from 0.1 to 5 μm have been prepared by magnetron sputtering and subsequently annealed. X-ray powder diffraction patterns of the films show the features associated with the lattice-modulated martensitic phase and/or cubic austenite at room temperature. 220-fiber texture was confirmed by the X-rays measurements made at 150 °C. While the Curie temperature is almost film thickness independent, the martensitic transformation temperature shows a strong descended dependence in the submicron range. The substrate curvature measurements demonstrate that the forward and reverse martensitic transformation in the films is accompanied by the reversible relaxation and accumulation of residual stress, originally created by the thermal treatment due to the difference in thermal expansion of the film and substrate. The values of residual stresses measured by both substrate curvature and X-rays diffraction methods at constant temperatures are found to be dependent on the film thickness. This behavior appears in correlation with the thickness dependence of the transformation temperature.     

Fabrication processing effects on the microstructure and morphology of erbium film

The effect of substrate temperature on the microstructure and the morphology of erbium film are systematically investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). All the erbium films are grown by electron-beam vapor deposition (EBVD). A novel preparation method for observing the cross-section morphology of the erbium film is developed. The films deposited at 200°C have (002) preferred orientation, and the films deposited at 450°C have a mixed (100) and (101) texture, due to the different growth mechanisms of surface energy minimization and recrystallization, respectively. The peak positions and the full widths at half maximum (FWHMs) of erbium diffraction lines (100), (002), and (101) shift towards higher angles and decrease with the increasing substrate temperature in a largely uniform manner, respectively. Also, the lattice constants decrease with increasing temperature. The transition in the film stresses can be used to interpret the changes in peak positions, FWHMs, and lattice constants. The stress is compressive for the as-growth films, and is counteracted by the tensile stress formed during the process of temperature cooling to room temperature. The tensile stress mainly originates from the difference in the coefficients of thermal expansion of the substrate-film couple.     

Ablation of transparent solids during self-limited deposition of diamond-like films from liquid hydrocarbons

A novel effect is studied of self-limitation of the diamond-like film thickness during laser irradiation of the interface of transparent substrates with liquid aromatic hydrocarbons. The interface is exposed through the transparent substrate to radiation of a copper vapor laser (wavelength of 510.6 nm, pulse duration of 20 ns). The thickness of diamond-like film increases linearly to 80-100 nm with the number of laser pulses and then saturates, while the substrate is ablated with nearly constant rate. This ablation rate depends on the thermal expansion coefficient of the substrate (glass, fused silica, sapphire, or CaF₂). The absorption of extinction coefficient of deposited films measured by ellipsometry is of order of 10⁴ cm^-1 and is sufficient to cause the significant heating of the interface. The ablation of the transparent substrates is due to their unequal thermal expansion compared to the diamond-like film having different thermal expansion coefficient. The measured ablation rates scale from 0.2 Å/pulse for glass to 4.5 Å/pulse for CaF₂. A 7m spatial resolution of the ablation process has been demonstrated for fused silica.     

Molecular beam epitaxy and magnetic properties of EuS films on silicon

EuS single crystalline films were grown epitaxially on silicon (111), (100) and (110) crystal substrate planes. By Rutherford backscattering techniques they are shown to achieve the stoichiometric composition and crystal perfection expected with molecular beam epitaxy. The angular dependence of the remagnetization process in the film plane confirms the expected crystal symmetry and magnetic anisotropy. The substantial, but different, reductions in the Curie temperatures of EuS-(111), -(110) and -(100) films by up to 15% have been attributed to the largely different thermal expansion coefficients of Si and EuS.     

Generation of acoustic waves by power microwave pulses with the use of thin metal films

We study the features of excitation of acoustic waves by high-power microwave pulses in thin metal films bordering on liquid. Aluminum films with thicknesses 1–10 nm deposited onto a quartz substrate were used in experiments. It is shown theoretically that the absorption coefficient of microwaves is maximum for film thickness from 2 to 3 nm and the value of this maximum is determined by the dielectric permittivity of the bordering liquid. Theoretical calculations and experiments are performed for water and ethyl alcohol. The sound generation in a layered system quartz-aluminum film-liquid is analyzed with the help of the step-by-step approach. At the first step, microwave energy is absorbed in the film and heat is released. Then heat almost instantly diffuses into a liquid whose thermal expansion creates an acoustic signal. Profiles of acoustic signals excited in aluminum films by microwave pulses with a 5-ns duration and an energy of up to 1 mJ are experimentally detected. The most efficient transduction was observed for an aluminum film 3.5 nm thick.     

Fabrication processing effects on microstructure and morphology of erbium film

The effects of substrate temperature on the microstructure and the morphology of erbium film are systematically investigated by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). All the erbium films are grown by the electron-beam vapor deposition (EBVD). A novel preparation method for observing the cross-section morphology of the erbium film is developed. The films deposited at 200 ℃ have (002) preferred orientation, and the films deposited at 450 ℃ have mixed (100) and (101) texture, which are due to the different growth mechanisms of surface energy minimization and recrystallization, respectively. The peak positions and the full widths at half maximum (FWHMs) of erbium diffraction lines (100), (002), and (101) shift towards higher angles and decrease with the increasing substrate temperature in a largely uniform manner, respectively. Also, the lattice constants decrease with the increasing temperature. The transition in the film stresses can be used to interpret the changes in peak positions, FWHMs, and lattice constants. The stress is compressive for the as-growth films, and is counteracted by the tensile stress formed during the process of temperature cooling down to room temperature. The tensile stress mainly originates from the difference in the coefficients of thermal expansion of substrate--film couple.