一种多波长激光晶体消光比测试仪的研究

介绍一种三波长的激光晶体消光比测试仪。该测试仪具有全自动，多波长的特点，其系统消光比优于５０ｄＢ，不确定度小于２％，具有很好的重复性。     

Modified Spontaneous Emission from Dye Molecules inside a Photonic Crystal Microcavity

We fabricate a photonic crystal microcavity containing Alq3 in a sandwiched structure by the self-assemble method. The angle-dependent photoluminescence （PL） spectra and the variation of the PL lifetime demonstrate the effect of the photonic band gap on the spontaneous emission of Alq3 in the photonic crystals.     

Metallic Photonic Bandgap Resonant Antennas with High Directivity and High Radiation Resistance

A metallic photonic bandgap (MPBG) resonant antenna is introduced,which has novel characteristics (such as high directivity and high radiation resistance for a certain range of frequencies )as compared to conventional MPBG antennas.The linear MPBG resonant antenna is formed by infinitely long metallic rods in vacuum.The numerical results for the radiation pattern and the radiation resistance are presented.By adjusting the structure of the MPBG resonant antenna and its working frequency,an optimal structure is achieved.The physical reasons for the novel characteristics of the MPBG resonant antenna are also explained.     

晶体双折射问题的教学探讨

光在晶体中传播产生双折射的现象是光学课程中的一个重要组成部分,考虑到学生数学基础的限制,一般课程教学中在讲授此部分内容时采用唯象的方法,从惠更斯关于单轴晶体中的波面假设出发,根据惠更斯作图法确定两束折射光在晶体中的传播方向,由此给出两束光在晶体中的传播性质,此方法虽简单易解但缺乏系统的理论支撑,学生感觉对这部分内容理解得不深不透.针对此问题我们对这部分内容作了精心梳理,在讲授过程中采用3个层次由浅入深,从现象描述到数学表达再到理论支撑,这种循序渐进从现象到本质的讲授方法学生易于接受,教学效果明显.     

离子晶体非简谐振动引起的光学非线性与增强吸收型光双稳

处理了光场与离子晶体的非简谐性振动之间的相互作用问题。导出了用简正坐标即声子模式所表达的非线性晶格动力学和非线性宏观极化。在旋转波近似下，得到在入射光驱动下光子－声子耦合体系的总的相干性哈密顿算符。     

Intense Green Upconversion Luminescence in Er^3＋：Yb^3＋ Codoped Fluorophosphate Glass Ceramic Containing SrTe5O11 Nanocrystals

Er^3＋ ：Yb^3＋ codoped tellurite-fluorophosphate （TFP） glass ceramic exhibits much stronger upconversion luminescence. The intensity of the 540nm green light and 651 nm red light of the TFP glass ceramic is 120 times and 44 times stronger than that of the fluorophospahte （FP） glass, respectively. XRD analysis shows that the nanocrystal in TFP glass ceramic is SrTe5O11. TFP glass ceramic also displays much higher upconversion fluorescence lifetime and crystallization stability. The narrow and strong peak at 540nm is very ideal for practical upconversion luminescence realization. This work is a new trial for exploring non-PbF2 involved nanocrystal upconversion glass ceramics.     

Fabrication of Two-Dimensional Photonic Crystals with Triangular Rods by Single-Exposure Holographic Lithography

We demonstrate a single-exposure holographic fabrication of two-dimensional photonic crystal with round- cornered triangular ＇atoms＇ arranged in a triangular lattice. Simulation results show that double absolute photonic band gaps exist in this structure. Our experimental results show that holographic lithography can be used to fabricate photonic crystals not only with various lattice structures but also with various kinds of structures of the atoms, to obtain absolute band gaps or a particular band gap structure. Furthermore, the single-exposure holographic method not only makes the fabrication process simple and convenient but also makes the structures of the atoms more perfect.     

Frequency bands of negative refraction in finite one-dimensional photonic crystals

We have discussed theoretically the negative refraction in finite one-dimensional (1D) photonic crystals (PCs) composed of alternative layers with high index contrast. The frequency bands of negative refraction are obtained with the help of the photonic band structure, the group velocity and the power transmittance, which are all obtained in analytical expression. There shows negative transverse position shift at the endface when negative refraction occurs, which is analysed in detail.     

Light-Induced Domain Inversion in Mg-Doped near Stoichiometric Lithium Niobate Crystals

We investigate the influence of visible light on domain inversion in Mg-doped near stoichiometric lithium niobate crystals and find that the switching electric field decreases about 70% above a threshold light intensity. This effect helps us optically control domain switching and produce bulk domain structures on the micrometre scale. Finally, we introduce a model of photo-induced carriers to explain the origin of the reduction of switching electric field.     

A two—dimensional photonic crystal with six large bandgaps formed by a hexagonal lattice of anisotropic cylinders

The plane-wave expansion method is used to calculate the band structure of a two-dimensional photonic crystal formed by a hexagonal structure of anisotropic cylinders. Two cylindrical inclusions in the unit cell have two different radii, R₁ and R₂ (R₁2). By reducing the symmetry of the structure and choosing appropriately parameters R₂ and s=R₁/R₂ (s<1), we obtain six large complete bandgaps, among which three are over 0.05 ω_e (where ω_e=\frac{2πc}{a}) in the high region of the normalized frequency (however, one of these over 0.065 ω_e is not stable). There are two other stable complete bandgaps in the low-frequency region.     

倍频及参量过程中的相位匹配角折返现象

许多非线性光学晶体在倍频及参量过程中的相位匹配角折返现象目前已由中国科学院物理研究所通过计算得到证实,并由基于经典光学的理论成功地解释了该现象的普遍性,得出倍频及参量过程中的相位匹配角折返现象广泛存在于一类和二类匹配的单轴及双轴晶体中的重要结论. 非线性光学晶体的相位匹配角折返现象是一种十分有趣且具有应用前景的新现象.倍频过程中的相位匹配角折返现象是指当晶体处于某一角度时,存在两个(或两个以上)不同频率的相干光同时倍频相位匹配.参量过程中的相位匹配角折返现象是指当泵浦光频率及晶体角度处在某一范围时,存在两…     

深紫外无机非线性光学晶体硼铍酸锶及其分子工程学探索方法

阐述了紫外无机非线性光学晶体分子工程学探索方法的基本特点，具体分析深紫外无机非线性光学晶体硼铍酸锶（ＳＢＢＯ）以氟硼铍酸钾（ＫＢＢＦ）为主要参考晶体的分子设计方法，随后根据晶体结构研究、单晶培养、和非线性光学性能测定等实验结果讨论ＳＢＢＯ作为新型深紫外无机晶体的主要优点，即它既具有更短的紫外吸收边（接近１５５ｎｍ）和较大的非线性光学系数（ｄ２２（ＳＢＢＯ）＝０６×ｄ２２（ＢＢＯ）＝１３８ｐｍ／Ｖ），同时晶体无明显层状习性，并肯有良好的化学稳定性和机械性能     

Na2SbF5晶体倍频系数的理论计算

本文使用阴离子基团理论计算了Na₂SbF₅晶体的倍频系数,得到d₁₂₃=4.48×10^-10esu,与实验值符合较好。计算结果表明,阴离子基团中孤对电子的存在有利于产生大的倍频效应。本文还分析了Na₂SbF₅晶体倍频系数小的原因:尽管(SbF₅)^2-基团存在孤对电子可以对晶体倍频系数有较大贡献,但孤对电子能级的相对位置对其倍频系数有不利影响,从而导致它的倍频系数d₁₂₃较小。 关键词：     

在BBO中产生217.3-2 21.4nm高功率和频输出

用Q-YAG激光的三次谐波(355nm)与调谐的Rh·6G染料激光在β-BaB2O4(BBO)晶体中和频,获得217.3～221.4nm连续调谐输出,和频输出的最大能量为250μJ,转换效率为11%.我们还讨论了获取最大和频输出能量的一些实验条件.     

Evaluation of Optical Properties of Self-Frequency-Doubling Crystal Yb：GdYAl3（BO3）4 for Laser Applications

Yb：GdYAl3 （B03）4 （Yb：GdYAB） is investigated as a new laser crystal for potential applications in self-frequency doubling. The emission and absorption properties of Yb：GdYAB crystal are studied, and the emission decay times of the upper laser level are measured. The emission cross sections are evaluated using the absorption cross section and principle of reciprocity. The other laser performance parameters, such as the minimum inversion fraction βmin, pump saturation intensity Isat and minimum pump intensity 1rain, are also calculated. The results are discussed in the framework of requirements for an effective diode-pumped Yb^3＋ laser system. Yb：GdYAB is expected to exhibit the most useful laser properties and to be superior to Yb：YAB crystal that has been excellent self-frequency-doubling crystal at present in many key spectroscopic parameter values.     

Transmission Properties of W3 Y-Branch Filters in Two-Dimensional Photonic Crystal Slabs

A highly efficient W3 Y-branch filter in a two-dimensional photonic crystal slab with triangular lattice of air holes is designed and fabricated, and its transmission properties are measured. By accurately adjusting the size of the resonant cavities, the minimum wavelength spacing of 7 nm between two channels is realized. The corresponding resonant wavelengths of the two cavities agree well with the calculated ones. This implies that this kind of fiIter may be promising in integrated wavelength division multiplexing system.     

Optical Properties of Highly Strained GaInAs／GaAs Quantum Wells Grown by Sb Assistance

Optical properties of highly strained GaInAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy with Sb assistance are investigated. The samples grown by Sb incorporation and Sb pre-deposition methods display high room-temperature photoluminescence (PL) intensity at extended 10ng wavelength. This result is explained by the surfactant effects of Sb during the growth of GaInAs/GaAs QW systems. An abnormal Sshaped temperature dependence of the PL peak position is found in the In0.42Ga0.58As/GaAs triple QWs sample grown with Sb pre-deposition. By investigating the transmission electron microscope images and time-resolved PL spectra, it is found that the S-shaped temperature dependence of the PL peak position originates from the exciton 10calization effect brought by the Sb-rich clusters on the QW interface.