Contact and phonon scattering effects on quantum transport properties of carbon-nanotube field-effect transistors

We investigated the phonon scattering effects on the transport properties of carbon nanotube devices with micron-order lengths at room temperature, using the time-dependent wave-packet approach based on the Kubo formula within a tight-binding approximation. We studied the scattering effects of both the longitudinal acoustic and the optical phonons on the transport properties. The conductance of semiconducting nanotubes is decreased by the acoustic phonon, instead of the optical phonon. Furthermore, we clarified how the electron mobilities of the devices are affected by the acoustic phonon.     

Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors

Sub-10 nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10 nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff ratio up to 10(6) and on-state current density as high as approximately 2000 microA/microm. We estimated carrier mobility approximately 200 cm2/V s and scattering mean free path approximately 10 nm in sub-10 nm GNRs. Scattering mechanisms by edges, acoustic phonon, and defects are discussed. The sub-10 nm GNRFETs are comparable to small diameter (d< or = approximately 1.2 nm) carbon nanotube FETs with Pd contacts in on-state current density and Ion/Ioff ratio, but have the advantage of producing all-semiconducting devices.     

Phonon spectrum of double-wall carbon nanotubes

The results of studying the phonon spectra of carbon nanotubes within the framework of the periodic-cluster model are presented. Special attention is paid to the phonon spectrum of double-wall nanotubes. It is shown that the spectrum is separated into two subbands corresponding to the acoustic and optical vibrational modes. A specific feature of the phonon dispersion curves is their “doublet” character. The spectrum has an acoustic mode corresponding to longitudinal oscillations of the two walls of a double-wall carbon nanotube with respect to each other.     

Band structure, phonon scattering, and the performance limit of single-walled carbon nanotube transistors

Semiconducting single-walled carbon nanotubes are studied in the diffusive transport regime. The peak mobility is found to scale with the square of the nanotube diameter and inversely with temperature. The maximum conductance, corrected for the contacts, is linear in the diameter and inverse temperature. These results are in good agreement with theoretical predictions for acoustic phonon scattering in combination with the unusual band structure of nanotubes. These measurements set the upper bound for the performance of nanotube transistors operating in the diffusive regime.     

Negative differential conductance and hot phonons in suspended nanotube molecular wires

Freely suspended metallic single-walled carbon nanotubes (SWNTs) exhibit reduced current carrying ability compared to those lying on substrates, and striking negative differential conductance at low electric fields. Theoretical analysis reveals significant self-heating effects including electron scattering by hot nonequilibrium optical phonons. Electron transport characteristics under strong self-heating are exploited for the first time to probe the thermal conductivity of individual SWNTs (approximately 3600 W m-1 K-1 at T=300 K) up to approximately 700 K, and reveal a 1/T dependence expected for umklapp phonon scattering at high temperatures.     

Effect of optical phonons scattering on electronic current in metallic carbon nanotubes

The effect of optical phonons scattering on electronic current has been studied in metallic carbon nanotubes. The current has been calculated self-consistently by total voltage equation and the heat transport equation. The total voltage equation consists of three terms, optical phonons collision term, acoustic phonon scattering term, and contact resistance one. Including LO, A₁, and E₁(2) phonons in collision term, we can reproduce the experimental I-V curves displaying negative differential conductance. Furthermore, one conclusion is made that the more optical phonons are scattered by electron, the lower current is in metallic carbon nanotubes. By comparing the current under different conditions, we can make another conclusion that there should be nonequilibrium optical phonons under high bias in spite of whether the metallic nanotube is suspended or not. This result agrees well with the others [M. Lazzeri, F. Mauri, Phys. Rev. B 73 (2006) 165419]. Based on these results, we do not only explain the experiment, but also propose to design a heat-controlling electronic transistor with metallic carbon nanotubes as its channel, in which the electronic current can be controlled by optical phonons.     

Low bias electron scattering in structure-identified single wall carbon nanotubes: role of substrate polar phonons

We have performed temperature-dependent electrical transport measurements on known structure single wall carbon nanotubes at low bias. The experiments show a superlinear increase in nanotube resistivity with temperature, which is in contradiction with the linear dependence expected from nanotube acoustic-phonon scattering. The measured electron mean free path is also much lower than expected, especially at medium to high temperatures (>100 K). A theoretical model that includes scattering due to surface polar phonon modes of the substrates reproduces the experiments very well. The role of surface phonons is further confirmed by resistivity measurements of nanotubes on aluminum nitride.     

非线性电子输运中声学和光学声子的联合散射效应

本文简略地描述了一个处理恒定电场中非线性电子输运的新方法,并用它讨论强场中声学和光学声子的联合散射效应。我们发现,虽然当光学声子散射能力较强时有可能在电流-电场曲线中出现一段比较平坦的区域,原来只考虑光学声子散射时在高场下的电流饱和现象现在却消失了。对足够高的电流密度,声学声子总是重要的。 关键词：     

Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN

The longitudinal optical (LO) phonon energy in AlGaN/GaN heterostructures is determined from temperature-dependent Hall effect measurements and also from Infrared (IR) spectroscopy and Raman spectroscopy. The Hall effect measurements on AlGaN/GaN heterostructures grown by MOCVD have been carried out as a function of temperature in the range 1.8-275 K at a fixed magnetic field. The IR and Raman spectroscopy measurements have been carried out at room temperature. The experimental data for the temperature dependence of the Hall mobility were compared with the calculated electron mobility. In the calculations of electron mobility, polar optical phonon scattering, ionized impurity scattering, background impurity scattering, interface roughness, piezoelectric scattering, acoustic phonon scattering and dislocation scattering were taken into account at all temperatures. The result is that at low temperatures interface roughness scattering is the dominant scattering mechanism and at high temperatures polar optical phonon scattering is dominant.     

Effects of non-equilibrium polar optic phonons and the band non-parabolicity on small signal high-frequency hot electrons ac mobility in narrow gap semiconductors in high magnetic fields

The small signal high-frequency ac mobility of hot electrons in n-HgCdTe in the extreme quantum limit at low and high temperatures have been calculated considering the non-equilibrium phonon distribution as well as the thermal phonon distribution .The energy loss rate has been calculated considering only optical phonon scattering while the momentum loss rate has been calculated considering acoustic phonon scattering and piezoelectric scattering together with polar optical phonon scattering and separately considering only the polar optical scattering. The results have been discussed and compared. It has been observed that at 20 K, the normalized mobility considering all the three scattering mechanisms differs appreciably from that considering only the polar optical phonon scattering. However, at 77 K, there is no difference in the normalized mobility. This establishes the fact that at higher temperature, the effect of acoustic phonon scattering and piezoelectric coupling is negligible, compared to the polar optical phonon scattering. So the ac mobility considering only polar optical phonon scattering has been studied at 77 and 20 K. The ac mobility is found to remain constant up to 100 GHz and thereafter it started decreasing at higher frequencies at 77 K whereas the ac mobility reduces at much lower frequencies at lower temperature at lower field. The non-parabolicity of the band structure enhances the normalized mobility.     

Unusually high thermal conductivity of carbon nanotubes

Combining equilibrium and nonequilibrium molecular dynamics simulations with accurate carbon potentials, we determine the thermal conductivity lambda of carbon nanotubes and its dependence on temperature. Our results suggest an unusually high value, lambda approximately 6600 W/m K, for an isolated (10,10) nanotube at room temperature, comparable to the thermal conductivity of a hypothetical isolated graphene monolayer or diamond. Our results suggest that these high values of lambda are associated with the large phonon mean free paths in these systems; substantially lower values are predicted and observed for the basal plane of bulk graphite.     

Nonlinear transport and heat dissipation in metallic carbon nanotubes

We show that the local temperature dependence of thermalized electron and phonon populations along metallic carbon nanotubes is the main reason behind the nonlinear transport characteristics in the high bias regime. Our model is based on the solution of the Boltzmann transport equation considering both optical and zone boundary phonon emission as well as absorption by charge carriers. It also assumes a local temperature along the nanotube, determined self-consistently with the heat transport equation. By using realistic transport parameters, our results not only reproduce experimental data for electronic transport but also provide a coherent interpretation of thermal breakdown under electric stress. In particular, electron and phonon thermalization prohibits ballistic transport in short nanotubes.     

石英玻璃中导带电子的光吸收

 分别用二阶和三阶微扰理论计算了193nm、355nm激光照射下石英玻璃中导带电子的单光子吸收速率和双光子吸收速率。结果表明,电子空穴散射参与的单光子吸收和声学声子参与的双光子吸收都是材料中导带电子吸收激光能量的重要过程。     

High-field electrical transport in single-wall carbon nanotubes

Using low-resistance electrical contacts, we have measured the intrinsic high-field transport properties of metallic single-wall carbon nanotubes. Individual nanotubes appear to be able to carry currents with a density exceeding 10(9) A/cm(2). As the bias voltage is increased, the conductance drops dramatically due to scattering of electrons. We show that the current-voltage characteristics can be explained by considering optical or zone-boundary phonon emission as the dominant scattering mechanism at high field.     

High-energy phonon branches of an individual metallic carbon nanotube

We present excitation-energy dependent Raman measurements between 2.05 and 2.41 eV on the same individual carbon nanotube. We find a change in the Raman frequencies of both the D mode (63 cm(-1)/eV) and the high-energy modes. The observed frequencies of the modes at approximately 1600 cm(-1) as a function of laser-energy map the phonon dispersion relation of a metallic tube near the Gamma point of the Brillouin zone. Our results prove the entire first-order Raman spectrum in single-wall carbon nanotubes to originate from double-resonant scattering. Moreover, we confirm experimentally the phonon softening in metallic tubes by a Peierls-like mechanism.     

一维纳米SiC-CNTs复合结构的生长机制和阴极射线发光

采用直接固相反应法制备了一维SiC-CNTs纳米复合结构。初始反应原料为纯的硅粉和碳纳米管混合物,没有使用任何触媒,在1 400℃温度下获得了一维纳米产物。采用X射线衍射、扫描电子显微镜、拉曼光谱、阴极射线发光光谱研究了产物的结构和光学性质。获得的一维S iC-CNTs纳米复合结构外径约为60nm,长度超过几个微米。CL谱中存在三个发射带,中心位置分别为2.89,2.39,2.22 eV。     

Low frequency Raman scattering from acoustic phonons confined in ZnO nanoparticles

We report here the first observation of the low frequency Raman scattering from acoustic phonons in semiconducting zinc oxide (ZnO) nanoparticles without embedding in any solid matrix. ZnO nanoparticles (size 5-10 nm) with nearly spherical shape have been synthesized using a chemical route. A shift in the phonon peaks toward higher frequencies along with broadening was observed with a decrease in particle size. The size dependence of the acoustic phonons in ZnO nanoparticles is explained using Lamb's theory that predicts the vibrational frequencies of a homogeneous elastic body of spherical shape. Our results show that the observed low frequency Raman scattering originates from the spherical (l = 0) and quadrupolar vibrations (l = 2) of the spheroidal mode due to the confinement of acoustic vibrations in ZnO nanoparticles.     

The intrinsic lifetime of low-frequency zone-centre phonon modes in silicon nanowires and carbon nanotubes

Estimates of the intrinsic lifetime of low-frequency zone-centre phonon modes in silicon nanowires and carbon nanotubes have been presented from the application of Fermi’s golden rule formula based upon an elastic continuum model for cubic anharmonicity. In particular, results have been presented for the lowest non-zero mode in both nanostructures, and also the breathing mode in the nanotube. Except for the ultrathin nanowire, the lifetime increases with size and decreases with an increase in temperature. Typically, these modes have a lifetime of the order of nanoseconds, almost a thousand times larger than the lifetimes of optical phonon modes in the corresponding bulk materials. Also, at room temperature the lifetime of the lowest non-zero mode is nearly an order of magnitude larger in the (20,20) nanotube than in the nanowire of similar thickness (width 2.2 nm).     

New features in the anti‐Stokes and Stokes Raman spectra of single‐walled carbon nanotubes that are highly separated into their semiconducting and metallic nanotube components

Surface‐enhanced Raman scattering studies were performed using nonresonant (514.5 nm) and resonant (676.4 nm) optical excitations on single‐walled carbon nanotubes thoroughly separated into semiconducting (pure 99%) and metallic (pure 98%) components. Regardless of the support (Au or Ag), the metallic nanotubes do not present an anomalous anti‐Stokes Raman emission. Regardless of whether an on‐resonant or off‐resonant optical excitation is used, only the semiconducting nanotubes produce an abnormal anti‐Stokes Raman emission that grows when increasing the excitation light intensity or temperature. The Raman studies under light polarized relative to the main nanotube axis demonstrate that only semiconducting nanotubes are sensitive toward changes in the polarization of the excitation light. Copyright © 2014 John Wiley & Sons, Ltd.