Dependence of switching process on the perpendicular magnetic anisotropy constant in P-MTJ

We investigate the dependence of the switching process on the perpendicular magnetic anisotropy(PMA) constant in perpendicular spin transfer torque magnetic tunnel junctions(P-MTJs) using micromagnetic simulations. It is found that the final stable states of the magnetization distribution of the free layer after switching can be divided into three different states based on different PMA constants: vortex, uniform, and steady. Different magnetic states can be attributed to a trade-off among demagnetization, exchange, and PMA energies. The generation of the vortex state is also related to the non-uniform stray field from the polarizer, and the final stable magnetization is sensitive to the PMA constant. The vortex and uniform states have different switching processes, and the switching time of the vortex state is longer than that of the uniform state due to hindrance by the vortex.     

Anatomy of field effects on magnetization dynamics and spin transfer noise

Spin transfer-related phenomena in nanomagnets have attracted extensive studies. In this paper we shall focus on analysis of individual and combined effects of the external, anisotropy, and demagnetization fields on magnetization dynamics and spin transfer noise. It is found that individual roles of the external, anisotropy, and demagnetization fields, as well as the combined roles of external plus anisotropy fields and anisotropy plus demagnetization fields, do not change the behavior of current induced magnetization switching. Such magnetization reversal procedures are of low noise. Our dynamics and power spectral density calculations show that it is the demagnetization field that plays a major role in inducing spin transfer noise: the demagnetization field itself or in combination with the anisotropy field will result in wave-like switching; moreover, the demagnetization field, together with the external field (not too small), will lead to precession and hence the system would be in noisy states. Our modeling work for an elliptical Py alloy is qualitatively consistent with Cornell's experiment and simulation [Science 307 (2005) 228].     

Magnetization switching modes in nanopillar spin valve under the external field

The current-induced magnetic switching is studied in Co/Cu/Co nanopillar with an in-plane magnetization traversed under the perpendicular-to-plane external field.Magnetization switching is found to take place when the current density exceeds a threshold.By analyzing precessional trajectories,evolutions of domain walls and magnetization switching times under the perpendicular magnetic field,there are two different magnetization switching modes:nucleation and domain wall motion reversal;uniform magnetization ...     

Current-driven magnetization switching and domain wall motion in nanostructures—Survey of recent experiments

An overview of recent experimental studies and new routes in the field of current-driven magnetization dynamics in nanostructured materials is given. The review introduces the basic concepts (Landau–Lifshitz phenomenology, critical current, spin currents in relation to spin accumulation, adiabatic/non-adiabatic spin-torque) and describes the main results of recent experiments on current-driven magnetization reversal within vertical pillar-like nanostructures and current-driven domain wall motion within laterally confined specimens. While for the pillar systems a discussion is provided of how the introduction of layers with perpendicular magnetic anisotropy, tunnel barriers and exchange bias and(or) oxide layers can be used to reduce the critical current densities for current-induced switching, the role of perpendicular anisotropy, use of spin valve structures, diluted magnetic semiconductors and epitaxial materials to increase the domain wall velocities are reviewed in the case of current-driven domain wall movement within lateral systems.     

Spin torque transfer structure with new spin switching configurations

Spin torque transfer structures with new spin switching configurations are proposed, fabricated and investigated in this paper. The non-uniform current-induced magnetization switching is implemented based on both GMR and MTJ nano devices. The proposed new spin transfer structure has a hybrid free layer that consists of a layer with conductive channels (magnetic) and non-conductive matrix (non-magnetic) and traditional free layer(s). Two mechanisms, a higher local current density by nano-current-channels and a non-uniform magnetization switching (reversal domain nucleation and growth) by a magnetic nanocomposite structure, contribute in reducing the switching current density. The critical switching current density for the new spin transfer structure is reduced to one third of the typical value for the normal structure. It can be expected to have one order of magnitude or more reduction for the critical current density if the optimization of materials and fabrication processes could be done further. Meanwhile, the thermal stability of this new spin transfer structure is not degraded, which may solve the long-standing scaling problem for magnetic random access memory (MRAM). This spin transfer structure, with the proposed and demonstrated new spin switching configurations, not only provides a solid approach for the practical application of spin transfer devices but also forms a unique platform for researchers to explore the non-uniform current-induced switching process.     

Magnetization switching driven by spin-transfer-torque in high-TMR magnetic tunnel junctions

This paper presents a numerical study of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). The current density distribution throughout the free-layer is computed dynamically, by modeling the ferromagnet/insulator/ferromagnet trilayer as a series of parallel resistances. The validity of the main hypothesis, which states that the current flows perpendicular to the sample plane, has been verified by numerically solving the Poisson equation. Our results show that the nonuniform current density distribution is a source of asymmetry to the switching process. Furthermore, we observe that the reversal mechanisms are characterized by well-defined localized pre-switching oscillation modes.     

Domain wall nucleation and propagation in spin-transfer torque switching with thermal effects

We conduct micro-magnetic simulations to study spin-transfer torque induced magnetization switching in perpendicular magnetic tunneling junctions. The effects of current densities and temperatures on the switching processes are studied in details. We then proposed an approach to compute the deterministic switching time by taking thermal-effect into account. The switching time is less temperature-dependent under higher current density; however, as the current density decreases, the effect of temperature on the switching time becomes more and more significant. The switching process with micro-magnetic simulations is shown to be via domain wall nucleation and propagation. The phenomena are consistent with the recent experimental found-out. We further propose a method to compute the switching time based on domain wall nucleation and propagation theory, and compare the switching time with those from macro-spin approximation. It is found the switching times from the micro-magnetic simulations are much shorter than that from the macro-spin approximations. Macro-spin approximation over-estimates the switching times due to its coherent rotation assumptions.     

Shape-dependent thermal switching behavior of superparamagnetic nanoislands

The thermal switching behavior of individual perpendicularly magnetized nanoscale Fe islands consisting of 200-600 atoms only is studied by low-temperature spin-polarized scanning tunneling microscopy. Our results reveal that the switching rate is strongly affected by the particle shape; i.e., elongated islands switch much more rapidly than compact islands of the same volume. This observation is explained by different processes of magnetization reversal. Our results suggest that compact magnetic particles are an ideal choice for future perpendicular magnetic recording media because they are robust against thermal magnetization reversal.     

Hard axis magnetic field dependence on current-induced magnetization switching in MgO-based magnetic tunnel junctions

We conducted a detailed study of hard axis magnetic field (H_hard) dependence on current-induced magnetization switching (CIMS) in MgO-based magnetic tunnel junctions (MTJs) with various junction sizes and various uniaxial anisotropy fields. The decreases in critical current density (J_c) and the intrinsic critical current density (J_c0) estimated from the pulse duration dependence on J_c in CIMS are observed when applying H_hard for all MTJs. The decrease in energy barrier of CIMS is also observed except for the largest sample. These results indicate that the reduction of J_c is attributable to both the increase of spin-transfer efficiency and the decrease in energy barrier in the case of applying H_hard. The J_c0 decreases with increase in the mutual angle between the direction of magnetization and the easy axis (θ_f), which is consistent with the theoretical prediction proposed by Slonczewski. The degree of the reduction of J_c0 for the same value of H_hard decreases with decreasing size of MTJs. This behavior is considered to be related to not only decrease in θ_f due to the increase in anisotropy field in MTJs, but also to the increase in the variance of the initial angle of magnetization due to the thermally activated magnon excitation. The stable switching endurance related to CIMS was observed in a wide range of MTJ sizes when applying H_hard. Moreover, we proposed a new architecture and a new switching method considering write disturbance. These results would be useful for application to spin memory and other spin-electronic devices.     

垂直自由层倾斜极化层自旋阀结构中的磁矩翻转和进动

在理论上研究了垂直自由层和倾斜极化层自旋阀结构中自旋转移矩驱动的磁矩翻转和进动.通过线性展开包括自旋转移矩项的Landau-Lifshitz-Gilbert方程并使用稳定性分析方法,得到了包括准平行稳定态、准反平行稳定态、伸出膜面进动态以及双稳态的磁性状态相图.发现通过调节电流密度和外磁场的大小可以实现磁矩从稳定态到进动态之间的转化以及在两个稳定态之间的翻转.翻转电流随外磁场的增加而增加,并且受自旋极化方向的影响.当自旋极化方向和自由层易磁化轴方向平行时,翻转电流最小;当自旋极化方向和自由层易磁化轴方向垂直时,翻转电流最大.通过数值求解微分方程,给出了不同磁性状态磁矩随时间的演化轨迹并验证了相图的正确性.     

Spin-transfer induced ultrafast precessional switching enhanced by interface anisotropy in a ferromagnetic nanopillar

Spin-transfer induced ultrafast precessional switching of magnetization in a Co/Cu/Co nanopillar device is studied. Micromagnetic calculations show that precessional magnetization switching occurs above a threshold current. The presence of interface uniaxial anisotropy in the Co-thin film free layer influences heavily the current and the energy required to initiate the switching in the device, and the speed of the precessional switching. The threshold current and the precessional switching time are significantly reduced by this effect.     

Effective reduction of critical current for current-induced magnetization switching by a Ru layer insertion in an exchange-biased spin valve

Recently, it has been predicted that a spin-polarized electrical current perpendicular to plane directly flowing through a magnetic element can induce magnetization switching through spin-momentum transfer. In this Letter, the first observation of current-induced magnetization switching (CIMS) in exchange-biased spin valves (ESPVs) at room temperature is reported. The ESPVs show the CIMS behavior under a sweeping dc current with a very high critical current density. It is demonstrated that a thin ruthenium (Ru) layer inserted between a free layer and a top electrode effectively reduces the critical current densities for the CIMS. An "inverse" CIMS behavior is also observed when the thickness of the free layer increases.     

Magnetization reversal in amorphous gadolinium-cobalt films with a radial gradient of magnetic properties

The integral characteristics of magnetization switching in amorphous gadolinium-cobalt films with perpendicular anisotropy are studied by visualizing the domain structure and measuring magnetooptic hysteresis loops. The films have a radial gradient of magnetic properties that is due to a spatially nonuniform thermal field. Magnetization switching in those film areas where the domain wall motion depends only on the coercive force is simulated in simple terms. In a first approximation, local events of magnetization switching are shown to take place independently of each other and the net hysteresis loop can be represented as a sum of the local loops.     

Reduction in critical current density of current-induced magnetization switching

We have investigated the current-induced magnetization switching in an exchange-biased spin valve structure. By using an unpatterned antiferromagnetic layer to pin the fixed Co layer, we obtained a lower switching current density by a factor of 5 than a simple spin valve structure. For the application, it is important to know how to keep the spin polarization when the thicker layer is pinned by an antiferromagnet. The unpatterned pinned ferromagnetic lead can be a good solution for spin-transfer-torque-activated device. The effect of Cu buffer layer on the top of the thin Co and Ru buffer layer under the thick Co layer on the current-induced magnetization switching in cobalt-based trilayer spin valves was also investigated. The experimental results showed that the Ru buffer layer in combination with Cu buffer layer could induce a decrease in the critical switching current by 30%, and an increase in the absolute resistance change by 35%, which is caused by an improvement of a microstructure of a thicker Co polarizer.     

自旋轨道矩调控的垂直磁各向异性四态存储器结构

利用氧化钽缓冲层对垂直各向异性钴铂多层膜磁性的影响,构想并验证了一种四态存储器单元.存储器器件包含两个区域,其中一区域的钴铂多层膜[Pt(3 nm)/Co(0.47 nm)/Pt(1.5 nm)]直接生长在热氧化硅衬底上,另一个区域在磁性膜和衬底之间沉积了一层氧化钽作为缓冲层[TaO x(0.3 nm)/Pt(3 nm)/Co(0.47 nm)/Pt(1.5 nm)],缓冲层导致两个区域的垂直磁各向异性不同.在固定的水平磁场下对器件施加与磁场同向的电流,由于电流引起的自旋轨道耦合力矩,两个区域的磁化取向均会发生翻转,且拥有不同的临界翻转电流.改变通过器件导电通道的电流脉冲形式,器件的磁化状态可以在4个态之间切换.本文器件的结构为设计自旋轨道矩存储器件提供了新的思路.     

Current induced exchange switching of magnetic junctions with cubic anisotropy of a free layer

The stability of equilibrium configurations of magnetic junctions with a free layer of cubic anisotropy with two axes in the layer plane has been analyzed. Variants of switching between different configurations have been considered. It has been demonstrated that the possibility exists of considerably decreasing the threshold current density necessary for switching. Numerical simulation of the dynamics of switching between different configurations has been performed.     

Magnetic interface-anisotropy of amorphous iron in contact with nonmagnetic metals

The magnetic properties of very thin ferromagnetic Fe films (1–10 atomic layers) in contact with nonmagnetic amorphous metals are investigated. Apart from the demagnetization energy, which supports a magnetization in the film plane, an energy of magnetic anisotropy occurs in the interlayer, which has the tendency to turn the magnetization perpendicular to the surface. The anomalous Hall effect of the ferromagnetic films is used to investigate their magnetic properties. From the measurements we get the applied magnetic fieldB _s , which is necessary to turn the magnetization perpendicular to the film surface.B _s is, besides a constant term, proportional to 1/d, which is typical of surface effects and yields the energy of the interface anisotropy. The value of this energy is strongly dependent on the nonmagnetic metal and is smaller for the system Pb/Fe than for Sn/Fe. Furthermore, the experimental results show no drastic reduction of the atomic magnetic moment in the surface layer.     

Growth-induced perpendicular anisotropy of grains in Co-Al-O nanogranular ferromagnetic films

This paper reports on the results of the magnetostatic measurements for Co-Al-O nanogranular films over a wide range of concentrations of the ferromagnetic component x. It has been revealed that grains in the films are characterized by the growth-induced anisotropy with easy axes directed perpendicular to the film plane. The maximum field of the single-grain perpendicular anisotropy reaches ∼2.5 kOe for samples in the vicinity of the percolation threshold (x ≈ 61 at % Co). It has been established that the characteristic features of the superparamagnetic behavior of an ensemble of oriented Stoner-Wohlfarth particles are retained for the sample with x ≈ 61 at % Co in the presence of the demagnetization field associated with the net magnetization of the film. The influence of the demagnetization field of the film on the shape of the magnetization reversal curves, the coercivity, and the blocking temperature has been investigated and simulated. The results of the simulation are consistent with the experimental data.     

Equilibrium states and quasi-static magnetization switching of a multilayer structure

The equilibrium orientations of magnetic moments that correspond to various values and directions of the biasing field are found in a set of magnetic films with cubic crystalline anisotropy and uniaxial induced anisotropy. The films are coupled by exchange interaction of the antiferromagnetic type. Field intervals are established where noncollinear and bistability states causing orientational phase transitions and hysteresis exist. Ninety degree magnetization switching (per switching cycle) of the magnetic moments of the films, as well as an orientational phase transition of bifurcation character, is discovered. Hysteresis loops for 180° in-plane magnetization switching are constructed.     

Modelling of toroidal moment switching and dynamics in ferromagnetic nanorings

Switching between right and left vortex magnetization states in annular ferromagnetic nanostructures, was studied. The study was performed by numerically solving the modified Landau-Lifshitz equation with consideration of the effect of spin transfer and full-scale consideration of the magnetostatic field, exchange energy, and anisotropy energy. The dynamics of magnetization reversal of the ferromagnetic nanoring, caused by the electric current flowing perpendicularly to the object plane and penetrating the structure, was studied taking into account two mechanisms of the current effect on magnetization: by the Oersted field and spin transfer. It was found that the presence of the spin polarization both perpendicular and parallel to the nanoring plane decreases the critical current at which the object is switched by an order of magnitude. It was shown that the toroidal moment \(\vec T\) is a convenient characteristic for describing magnetization reversal processes in annular magnetic nanostructures.