Magnetization reversal of individual Co nanoislands

We investigate the magnetization reversal of individual Co islands on Cu(111) in the size range of N=700 to 18,000 atoms by spin-polarized scanning tunneling microscopy at 8 K. The switching field H(sw) changes with island size in a nonmonotonic manner: it increases with island size and reaches a maximum value of 2.4 T at N=5500 atoms, and it decreases for larger islands. We extract the energy barrier for magnetization reversal as a function of island size. The maximum H(sw) corresponds to an energy barrier of 1 eV. Our results elucidate a crossover of the magnetization reversal from an exchange-spring behavior to domain wall formation with increasing size at around 7500 atoms.     

Dynamic origin of vortex core switching in soft magnetic nanodots

The magnetic vortex with in-plane curling magnetization and out-of-plane magnetization at the core is a unique ground state in nanoscale magnetic elements. This kind of magnetic vortex can be used, through its downward or upward core orientation, as a memory unit for information storage, and thus, controllable core switching deserves some special attention. Our analytical and micromagnetic calculations reveal that the origin of vortex core reversal is a gyrotropic field. This field is induced by vortex dynamic motion and is proportional to the velocity of the moving vortex. Our calculations elucidate the physical origin of the vortex core dynamic reversal, and, thereby, offer a key to effective manipulation of the vortex core orientation.     

Time-resolved imaging of spin transfer switching: beyond the macrospin concept

Time-resolved images of the magnetization switching process in a spin transfer structure, obtained by ultrafast x-ray microscopy, reveal the limitations of the macrospin model. Instead of a coherent magnetization reversal, we observe switching by lateral motion of a magnetic vortex across a nanoscale element. Our measurements reveal the fundamental roles played independently by the torques due to charge and spin currents in breaking the magnetic symmetry on picosecond time scales.     

Domain wall nucleation in epitaxial exchange-biased Fe/IrMn bilayers with highly misaligned anisotropies

The angular dependence of the magnetization reversal in epitaxial Fe/IrMn bilayers with collinear and non-collinear cubic and unidirectional anisotropies is investigated. Multistep loops with different magnetization reversal processes are observed for either positive or negative angles with respect to the Fe easy axis. The angular dependence of the switching fields displays the broken symmetry of the induced non-collinearity. The experimental results are reproduced with a generalized domain wall nucleation model that includes the induced anisotropy configuration and the peculiar asymmetric magnetic switching behavior. These results highlight the importance of the relative angle between anisotropies in epitaxial exchange bias systems with incoherent rotation reversal mechanism, opening a new pathway for tailoring the magnetic properties of such systems.     

Effect of the soft layer thickness on magnetization reversal process of exchange-spring nanomagnet patterns

A systematic study of the magnetization reversal behavior in the regular arrangement of L1₀-FePt based exchange-spring nanomagnets with different thicknesses of the Co soft magnetic layer is presented. The magnetic property of the hard magnet is compared to two tuned exchange-spring magnets: its systems of 20 nm L1₀-FePt/3 nm, and 7 nm Co. In particular, we focus on the switching field distribution. The exchange coupling showed narrower SFD, in spite of the decoupled part switches earlier. The magnetization switching mechanism of exchange-spring nanomagnets patterns has been revealed with a first-order reversal curves technique and the switching field distribution. Further, the microscopic results using magnetic force microscopy show that the spin rotation of the non-interacting part in the thicker soft layered exchange-spring magnet. The part influences the magnetization reversal process. According to the experimental results, exchange coupling strength can be tuned by the thickness of the soft magnetic layer.     

Magnetization switching modes in nanopillar spin valve under the external field

The current-induced magnetic switching is studied in Co/Cu/Co nanopillar with an in-plane magnetization traversed under the perpendicular-to-plane external field.Magnetization switching is found to take place when the current density exceeds a threshold.By analyzing precessional trajectories,evolutions of domain walls and magnetization switching times under the perpendicular magnetic field,there are two different magnetization switching modes:nucleation and domain wall motion reversal;uniform magnetization ...     

Theoretical limit of the minimal magnetization switching field and the optimal field pulse for Stoner particles

The theoretical limit of the minimal magnetization switching field and the optimal field pulse design for uniaxial Stoner particles are investigated. Two results are obtained. One is the existence of a theoretical limit of the smallest magnetic field out of all possible designs. It is shown that the limit is proportional to the damping constant in the weak damping regime and approaches the Stoner-Wohlfarth (SW) limit at large damping. For a realistic damping constant, this limit is more than 10 times smaller than that of so-called precessional magnetization reversal under a noncollinear static field. The other is on the optimal field pulse design: if the magnitude of a magnetic field does not change, but its direction can vary during a reversal process, there is an optimal design that gives the shortest switching time. The switching time depends on the field magnitude, damping constant, and magnetic anisotropy.     

Study of domain structure and magnetization reversal after thermal treatments in Fe40Co38Mo4B18 microwires

We have studied the effect of thermal treatment on the magnetic domain structure and magnetic reversal process of amorphous and nanocrystalline Fe₄₀Co₃₈Mo₄B₁₈ microwires. The domain structure and the magnetization reversal of amorphous FeCoMoB microwires reflect the complex stress distribution introduced by the glass coating. Hence, the thickness of radial domain structure decreases with temperature and the temperature dependence of the switching field presents a discontinuous behavior. After nanocrystallization, the domain structure of FeCoMoB microwire is almost constant within the temperature range 10-400 K and the switching field decreases almost linearly with temperature mostly because of the decrease of saturation magnetization.     

Interface magnetization reversal and anisotropy in Fe/AlGaAs(001)

The reversal process of the Fe interface layer magnetization in Fe/AlGaAs heterostructures is measured directly using magnetization-induced second-harmonic generation, and is compared with the reversal of the bulk magnetization as obtained from magneto-optic Kerr effect. The switching characteristics are distinctly different due to interface-derived anisotropy--single step switching occurs at the interface layer, while two-jump switching occurs in the bulk Fe for the magnetic field orientations employed. The angle between the interface and bulk magnetization may be as large as 40-85 degrees. Such interface switching will dominate the behavior of nanoscale structures.     

Ultrafast nanomagnetic toggle switching of vortex cores

We present an ultrafast route for a controlled, toggle switching of magnetic vortex cores with ultrashort unipolar magnetic field pulses. The switching process is found to be largely insensitive to extrinsic parameters, like sample size and shape, and it is faster than any field-driven magnetization reversal process previously known from micromagnetic theory. Micromagnetic simulations demonstrate that the vortex core reversal is mediated by a rapid sequence of vortex-antivortex pair creation and annihilation subprocesses. Specific combinations of field-pulse strength and duration are required to obtain a controlled vortex core reversal. The operational range of this reversal mechanism is summarized in a switching diagram for a 200 nm Permalloy disk.     

Out-of-Plane Torque Influence on Magnetization Switching and Susceptibility in Magnetic Multilayers

Based on both the spin diffusion equation and the Landau-LlTshitz-Gilbert （LLG） equation, we demonstrate the influence of out-of-plane spin torque on magnetization switching and susceptibility in a magnetic multilayer system. The variation of spin accumulation and local magnetization with respect to time are studied in the magnetization reversal induced by spin torque. We also research the susceptibility subject to a microwave magnetic field, which is compared with the results obtained without out-of-plane torque.     

Effect of resistance feedback on spin torque-induced switching of nanomagnets

In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves parallel (P) to anti-parallel (AP) switching is adversely affected by the resistance feedback due to saturation of the spin torque, in low resistance magnetic tunnel junctions P-AP switching is enhanced. We study the effect of resistance feedback on the switching time of magnetic tunnel junctions, and show that magnetization switching is only affected by capacitive shunting in the pF range.     

Quasiballistic magnetization reversal

We demonstrate a quasiballistic switching of the magnetization in a microscopic magnetoresistive memory cell. By means of time resolved magnetotransport, we follow the large angle precession of the free layer magnetization of a spin valve cell upon application of transverse magnetic field pulses. Stopping the field pulse after a 180 degrees precession rotation leads to magnetization reversal with reversal times as short as 165 ps. This switching mode represents the fundamental ultrafast limit of field induced magnetization reversal.     

Investigation of the magnetization reversal of a magnetic dot array of Co/Pt multilayers

The magnetization reversal behavior of a dot array consisting of Co/Pt multilayers with perpendicular magnetic anisotropy was investigated. The size of the dots was varied from 200 nm down to 40 nm, while keeping the filling factor constant at about 0.16. The structural properties were determined by scanning electron microscopy, whereas the magnetic investigation was performed using SQUID and MFM techniques. It was observed that the dot size has a severe impact on the magnetization reversal mechanism where only the smallest dots with a size of 40 nm are found to be in a magnetic single-domain state. Moreover, the patterning process leads to a degradation of the multilayer, leading to a reduction of the switching field and an increase of the switching field distribution with decreasing dot size. In addition, micromagnetic simulations were performed to understand the magnetization reversal mechanism in more detail.     

Nanomechanical magnetization reversal

The dynamics of the ferromagnetic order parameter in thin magnetic films is strongly affected by the magnetomechanical coupling at certain resonance frequencies. By solving the equation of motion of the coupled mechanical and magnetic degrees of freedom we show that the magnetic field induced magnetization switching can be strongly accelerated by the lattice and illustrate the possibility of magnetization reversal by mechanical actuation.     

Spin torque transfer structure with new spin switching configurations

Spin torque transfer structures with new spin switching configurations are proposed, fabricated and investigated in this paper. The non-uniform current-induced magnetization switching is implemented based on both GMR and MTJ nano devices. The proposed new spin transfer structure has a hybrid free layer that consists of a layer with conductive channels (magnetic) and non-conductive matrix (non-magnetic) and traditional free layer(s). Two mechanisms, a higher local current density by nano-current-channels and a non-uniform magnetization switching (reversal domain nucleation and growth) by a magnetic nanocomposite structure, contribute in reducing the switching current density. The critical switching current density for the new spin transfer structure is reduced to one third of the typical value for the normal structure. It can be expected to have one order of magnitude or more reduction for the critical current density if the optimization of materials and fabrication processes could be done further. Meanwhile, the thermal stability of this new spin transfer structure is not degraded, which may solve the long-standing scaling problem for magnetic random access memory (MRAM). This spin transfer structure, with the proposed and demonstrated new spin switching configurations, not only provides a solid approach for the practical application of spin transfer devices but also forms a unique platform for researchers to explore the non-uniform current-induced switching process.     

Electric-field-induced magnetization reversal in a ferromagnet-multiferroic heterostructure

A reversal of magnetization requiring only the application of an electric field can lead to low-power spintronic devices by eliminating conventional magnetic switching methods. Here we show a nonvolatile, room temperature magnetization reversal determined by an electric field in a ferromagnet-multiferroic system. The effect is reversible and mediated by an interfacial magnetic coupling dictated by the multiferroic. Such electric-field control of a magnetoelectric device demonstrates an avenue for next-generation, low-energy consumption spintronics.     

Domain-wall induced coupling between ferromagnetic layers

The remanent magnetization of a hard ferromagnetic CoPtCr layer is progressively decreased by repeated switching of a neighboring soft magnetic layer. We show that this effect depends strongly on the thickness of the CoPtCr layer and the spacing between the hard and soft layers. We propose a model that accounts for these results: An interlayer magnetostatic coupling is induced by large stray fields from domain walls that form within the soft layer during its magnetization reversal.     

Magnetization reversal in submicron disks: exchange biased vortices

Submicron, circular, ferromagnetic-antiferromagnetic dots exhibit different magnetization reversal mechanisms depending on the direction of the magnetic applied field. Shifted, constricted hysteresis loops, typical for vortex formation, are observed for fields along the exchange bias direction. However, for fields applied close to perpendicular to the exchange bias direction, magnetization reversal occurs via coherent rotation. Magnetic force microscopy imaging together with micromagnetic simulations are used to further clarify the different magnetic switching behaviors.     

Thermal activation of magnetization in Pr_2Fe_(14)B ribbons

The aftereffect field of thermal activation,which corresponds to the fluctuation field of a domain wall,is investigated via specific measurements of the magnetization behavior in Pr2Fe14B nanocrystalline magnets.The thermal activation is a magnetization reversal arising from thermal fluctuation over an energy barrier to an equilibrate state.According to the magnetic viscosity and the field sweep rate dependence of the coercivity,the calculated values of the fluctuation field are lower than the aftereffect field and in a range between those of domain walls and individual grains.Based on these results,we propose that the magnetization reversal occurs in multiple ways involving grain activation and domain wall activation in thermal activation,and the thermal activation decreases the coercivity by~0.2 kOe in the Pr2Fe14B ribbons.