基于石墨烯/石墨烯卷轴复合薄膜高灵敏度柔性压力传感器（英文）

一维导电材料例如纳米线,大量应用于柔性压力传感器中.但是一维材料和基底之间接触时相互作用力较弱,使得传感器灵敏度、响应时间、和循环寿命等性能指标有待进一步提高.针对这些问题,设计了石墨烯/石墨烯卷轴多分子层复合薄膜作为传感器导电层.石墨烯卷轴具有一维结构,而石墨烯的二维结构可以牢固地固定卷轴,以确保高导电性复合薄膜与基底之间的粘附性,同时整体结构的导电通道得到了增加.由于一维和二维结构的协同效应,实现了应变灵敏度系数3.5 kPa~(-1)、响应时间小于50 ms、能够稳定工作1000次以上的压阻传感器.     

石墨烯/柔性基底复合结构双向界面切应力传递问题的理论研究

界面力学性能是影响石墨烯/柔性基底复合结构整体力学性能的关键因素,因此对该结构界面切应力传递机理的研究十分必要.考虑了石墨烯和基底泊松效应的影响,本文提出了二维非线性剪滞模型.对于基底泊松比相比石墨烯较大的情况,利用该模型理论研究了受单轴拉伸石墨烯/柔性基底结构的双向界面切应力传递问题.在弹性粘结阶段,导出了石墨烯双向正应变和双向界面切应力的半解析表达式,分析了不同位置处石墨烯正应变和界面切应力的分布规律.导出了石墨烯/柔性基底结构发生界面滑移的临界应变,结果表明该临界应变低于利用经典一维非线性剪滞模型得到的滑移临界应变,并且明显受到石墨烯宽度尺寸以及基底泊松比大小的影响.基于二维非线性剪滞模型建立有限元模型(FEM),研究了界面滑移阶段石墨烯双向正应变和双向界面切应力的分布规律.与一维非线性剪滞模型的结果对比表明,当石墨烯宽度较大时,二维模型和一维模型对石墨烯正应变、界面切应力以及滑移临界应变的计算结果均存在较大差别,但石墨烯宽度很小时,二维模型可近似被一维模型代替.最后,通过与拉曼实验结果的对比,验证了二维非线性剪滞模型的可靠性,并得到了石墨烯/聚对苯二甲酸乙二醇酯(PET)基底结构的界面刚度(100 TPa/m)和界面剪切强度(0.295 MPa).     

基于多层石墨烯材料的光纤声波传感器

研究了一种基于多层石墨烯材料的光纤声波传感器,该传感器是由单模光纤和多层石墨烯薄膜构成的光纤法布里-珀罗干涉腔结构。分别采用多层的石墨烯和氧化石墨烯(GO)材料作为声压敏感薄膜,进行声波传感实验研究。结果表明,在音频范围内,基于石墨烯和GO薄膜的光纤声波传感器的平均信噪比分别达到56dB和69dB,平均最小可探测声压灵敏度分别为20.8μPa·Hz~(-1/2)和6.63μPa·Hz~(-1/2),远低于电学声波传感器的最小可探测声压灵敏度。基于石墨烯材料的光纤声波传感器具有更高的声波检测灵敏度,适用于强电磁干扰、狭小空间等环境下的微声压测量。     

不同基底石墨烯涂层的层间滑移减磨性能研究

石墨烯薄膜作为一种二维材料，是提高微/纳机电系统(MEMS/NEMS)摩擦力学性能的优异润滑剂.为了探究基底材料和石墨烯层数对其减磨性能的影响，本文通过在不同基底制备了不同层数的石墨烯涂层，利用原子力显微镜(AFM)实验和分子动力学(MD)仿真结合的方法，研究了石墨烯层数对减磨效应的影响.并且通过建立不同层数石墨烯涂层的摩擦性能分析模型，探究出石墨烯层间滑移是产生减磨的主要因素.结果表明:在不同载荷下，石墨烯涂层对硅基底和铜基底均有优异的减磨效果，摩擦力随着石墨烯层数的增加逐渐降低，当石墨烯层数大于10层时，达到最优99.3%的减磨效果.通过仿真分析发现，随着层数增加，石墨烯与基底的干摩擦转变为石墨烯的层间摩擦，并产生层间剪切滑移，石墨烯层间滑移是导致多层石墨烯优异减磨性能的主要因素.     

石墨烯谐振式力学量传感器研究进展

传统谐振式传感器的谐振敏感元件大多采用金属、石英晶体、硅等材料制成,但随着谐振式传感器朝着小型化、微型化、实用化的趋势发展,不但要求新型谐振子材料可进行微纳加工,还对其灵敏度和精度提出了更高的要求.石墨烯这种新型二维纳米材料,因具有出色的力学、电学、光学、热学特性,在谐振传感领域有着巨大的应用潜力和研究价值,因此基于石墨烯材料的力学量传感器有望在小型化、高性能和环境适应性等多方面超越硅基力学量传感器.本文针对石墨烯谐振式力学量传感器,介绍了石墨烯材料的基本性质、制备与转移方法,阐述了谐振式传感器的工作原理与应用特点,进而分析了关于石墨烯谐振特性优化与谐振器制备的理论与实验研究;在此基础上,重点总结了石墨烯谐振器在压力、加速度、质量等传感器领域的研究进展,梳理了石墨烯谐振式力学量传感器在薄膜转移、结构制备与激振/拾振等方面的技术问题,同时也明确了石墨烯在谐振传感领域的研究价值和发展潜力.     

基于纳米铜/石墨烯包覆光子晶体光纤的 硫化氢气体传感性能研究

提出一种基于纳米铜/石墨烯包覆光子晶体光纤的硫化氢传感方法.将两根单模光纤分别与实心光子晶体光纤进行粗锥熔接,形成马赫-曾德干涉结构.先在光子晶体光纤表面包覆石墨烯薄膜,再在石墨烯薄膜的表面沉积纳米铜形成复合敏感薄.当复合敏感薄膜吸附硫化氢气体时,其自身折射率发生改变,导致光子晶体光纤中纤芯与包层的光程差发生变化,干涉波谷发生偏移.建立气体浓度与波长偏移关系,实现硫化氢的低浓度检测.研究表明:该传感器的灵敏度为8.5pm/ppm,检测限为3.85ppm,在硫化氢浓度为0～80ppm范围内呈现良好的线性和选择性,其输出光谱呈现蓝移,响应时间和恢复时间分别约为92s和119s.该传感器成本低、结构简单、制作容易,有望应用于硫化氢气体的探测.     

石墨烯/AZO/SiC复合结构的近场辐射换热特性

由于倏逝波贡献,近场辐射换热可以远超黑体辐射定律给出的极限换热热流,对近场辐射换热的调控在近场热光伏及热管理方面有重要的应用前景。石墨烯是一种有潜力的可用于近场辐射换热调控的功能材料。本文研究了由石墨烯、铝掺杂氧化锌(aluminum-doped zinc-oxide,AZO)及SiC构成的多层复合薄膜的近场辐射换热特性。研究发现:"AZO薄膜+SiC基底"结构的频谱辐射热流在SiC的SPhP频域出现谷值,而"SiC薄膜+AZO基底"结构同时在两种表面极化激元的共振频率处出现峰值;覆盖单层石墨烯薄膜对"AZO薄膜+SiC基底"结构的近场辐射换热基本没有影响;而"石墨烯/SiC薄膜/AZO基底"结构却可以同时支持三种表面极化激元,并在调控石墨烯化学势到适当值时,可以有效增强近场换热。本研究有助于理解石墨烯对近场辐射换热的调控特性。     

化学气相沉积石墨烯薄膜的洁净转移

石墨烯因其优异的性能在很多领域具有广阔的应用前景.目前石墨烯薄膜主要是以铜作为催化基底,通过化学气相沉积法制备.这种方法制备的石墨烯薄膜需要被转移到目标基底上进行后续应用,而转移过程则会对石墨烯造成污染,进而影响石墨烯的性质及器件的性能.如何减少或避免污染,实现石墨烯的洁净转移,是石墨烯薄膜转移技术研究的重要课题,也是本综述的主题.本综述首先简单介绍了石墨烯的转移方法;进而重点讨论由于转移而引入的各种污染物及其对石墨烯性质的影响,以及如何抑制污染物的引入或如何将其有效地去除;最后总结了石墨烯洁净转移所存在的挑战,展望了未来的研究方向和机遇.本综述不仅有助于石墨烯薄膜转移技术的研究,对整个二维材料器件的洁净制备也将有重要参考价值.     

金属基底对石墨烯薄膜阴极气体击穿稳定性影响

利用石墨烯二维材料极好的场发射能力和发射稳定性,提出了石墨烯阴极提高气体开关击穿稳定性的技术路线。采用化学气相沉积法和基底腐蚀转移法两种方法制备金属基底石墨烯薄膜阴极。利用扫描电子显微镜和拉曼光谱表征了石墨烯薄膜阴极质量,确认了石墨烯层数和均匀性。实验研究了两种石墨烯薄膜阴极气体开关,在微秒脉冲均匀电场作用下的击穿特性,获得了击穿电压幅值和分散性的变化规律。结果表明:当气体为0.6 MPa N2、电极间距为5 mm时,铜基底石墨烯薄膜阴极平均击穿电压为85.9 kV,相对标准差为3.2%;不锈钢基底石墨烯薄膜阴极平均击穿电压仅为59.8 kV,相对标准差为2.4%。当两种阴极击穿电压均为80 kV时,相对标准差比较,不锈钢基底仅为铜基底的44%。分析认为,不锈钢基底石墨烯薄膜质量优于铜基底,石墨烯薄膜导致阴极表面微观场增强因子更高,表面分布更均匀,在电场作用下场致发射产生均匀稳定的大量初始电子流,降低了气体开关击穿电压,有效提高了击穿稳定性。     

凹槽铜基底表面与单层石墨烯的相互作用特性研究

基于石墨烯二维材料的诸多应用需要将其大面积、高质量地转移到目标基底上,迫切需要了解石墨烯在剥离和转移过程中与基底之间的相互作用特性.本文采用经典分子动力学方法探索了铜基底表面凹槽的几何特征尺寸对石墨烯吸附和剥离过程中凹槽基底对石墨烯吸附作用的影响机理和规律.结果表明:对于固定边界条件下的单层石墨烯,当基底表面的凹槽宽度固定不变时,吸附过程中基底对石墨烯的吸附力随二者间距的减小,呈现先增大后减小的趋势;其最大吸附力随凹槽深度的增加而增大,而当凹槽深度继续增大至石墨烯未能吸附进入凹槽底部的临界值时,吸附力迅速减小;剥离过程中,石墨烯完全剥离的临界作用力随凹槽深度的增加同样呈现先增大后减小的趋势,且与剥离前石墨烯与凹槽基底的相互作用面积有关;当基底表面凹槽的深度固定不变时,吸附和剥离过程中石墨烯-基底之间的吸附力随间距的变化规律取决于石墨烯在基底凹槽处的稳态吸附构型.     

Graphene based heterostructures

The two dimensional charge carriers in monolayer and bilayer graphene are described by massless and massive chiral Dirac Hamiltonians, respectively. These two-dimensional materials are predicted to exhibit a wide range of behavior, etc. However, graphene devices on a typical three-dimensional insulating substrates such as SiO₂ are highly disordered, exhibiting characteristics that are far inferior to the expected intrinsic properties of graphene. We have developed a novel technique for substrate engineering of graphene devices using layered dielectric materials to build graphene based vertical heterostructures. We employ hBN, an insulating isomorph of graphite, as a substrate and gate dielectric for graphene electronics. In this review, we describe the fabrication and characterization of high-quality exfoliated mono- and bilayer graphene devices on single-crystal hBN substrates, using a mechanical transfer process. Graphene devices on hBN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO₂. We use the enhanced mobility of electrons in hBN supported graphene to investigate the effects of electronic interactions. We find that interactions drive spontaneous breaking of the emergent SU(4) symmetry of the graphene Landau levels, leading to a variety of non-trivial integer and fractional quantum Hall states. The ability to assemble crystalline layered materials in a controlled way permits the fabrication of graphene devices on other promising dielectrics and allows for the realization of more complex graphene heterostructures.     

Flexible Electrode Made of Graphene and Few-Layer Graphite

A method of obtaining graphene oxide from Hummers-modified natural flake graphite with subsequent synthesis of reduced graphene and few-layer graphite has been suggested. The structure and electrical performance of the synthesized material have been studied. The feasibility of making a high-capacitance flexible electrode using polyethylene substrates covered by a conductive ink has been demonstrated.

     

高性能石墨烯霍尔传感器

本文回顾了石墨烯霍尔传感器的相关研究工作.通过改善石墨烯生长转移和霍尔元件的微加工工艺,石墨烯霍尔元件和霍尔集成电路都展示出超越传统霍尔传感器的优异性能.石墨烯霍尔元件的灵敏度、分辨率、线性度和温度稳定性等重要指标都优于传统商用霍尔元件.通过开发一套钝化工艺,霍尔元件的稳定性有了明显提升.结合石墨烯材料的特点,展示了石墨烯在柔性磁传感和多功能传感领域的新颖应用.此外,成功实现了石墨烯/硅互补型金属-氧化物-半导体(CMOS)混合霍尔集成电路,并进行了应用展示.通过发展一套低温加工工艺(不超过180℃),将石墨烯霍尔元件制备在硅基CMOS芯片的钝化层上,从而与硅基CMOS电路实现了单片集成.本文的研究结果表明石墨烯在霍尔磁探测方向拥有重大的性能优势,在产业化应用中有巨大发展潜力.     

Liquid‐Crystal‐Mediated Self‐Assembly of Porous α‐Fe2O3 Nanorods on PEDOT:PSS‐Functionalized Graphene as a Flexible Ternary Architecture for Capacitive Energy Storage

A novel aqueous‐based self‐assembly approach to a composite of iron oxide nanorods on conductive‐polymer (CP)‐functionalized, ultralarge graphene oxide (GO) liquid crystals (LCs) is demonstrated here for the fabrication of a flexible hybrid material for charge capacitive application. Uniform decoration of α‐Fe₂O₃ nanorods on a poly(3,4‐ethylene‐dioxythiophene): poly(styrenesulfonate) (PEDOT:PSS)‐functionalized, ultralarge GO scaffold results in a 3D interconnected layer‐by‐layer (LBL) architecture. This advanced interpenetrating network of ternary components is lightweight, foldable, and possesses highly conductive pathways for facile ion transportation and charge storage, making it promising for high‐performance energy‐storage applications. Having such structural merits and good synergistic effects, the flexible architecture exhibits a high specific discharge capacitance of 875 F g^?1 and excellent volumetric specific capacitance of 868 F cm^?3 at 5 mV s^?1, as well as a promising energy density of 118 W h kg^?1 (at 0.5 A g^?1) and promising cyclability, with capacity retention of 100% after 5000 charge–discharge (CD) cycles. This synthesis method provides a simple, yet efficient approach for the solution‐processed LBL insertion of the hematite nanorods (HNR) into CP‐functionalized novel composite structure. It provides great promise for the fabrication of a variety of metal‐oxide (MO)‐nanomaterial‐based binder and current collector‐free flexible composite electrodes for high‐performance energy‐storage applications.     

Graphene screen‐printed radio‐frequency identification devices on flexible substrates

Despite the great promise of printed flexible electronics from 2D crystals, and especially graphene, few scalable applications have been reported so far that can be termed roll‐to‐roll compatible. Here we combine screen printed graphene with photonic annealing to realize radio‐frequency identification devices with a reading range of up to 4 meters. Most notably our approach leads to fatigue resistant devices showing less than 1% deterioration of electrical properties after 1000 bending cycles. The bending fatigue resistance demonstrated on a variety of technologically relevant plastic and paper substrates renders the material highly suitable for various printable wearable devices, where repeatable dynamic bending stress is expected during usage. All applied printing and post‐processing methods are compatible with roll‐to‐roll manufacturing and temperature sensitive flexible substrates providing a platform for the scalable manufacturing of mechanically stable and environmentally friendly graphene printed electronics.

     

基于银纳米线电极-rGO敏感材料的柔性NO2气体传感器

使用银纳米线作为材料制备柔性叉指电极,用还原氧化石墨烯(reduced graphene oxide, rGO)作为气体敏感材料制备出柔性气体传感器,并研究其对二氧化氮气体的响应特性以及柔韧性能.实验结果表明,制备的以银纳米线作为电极的r GO气体传感器可以实现室温下对浓度为5-50 ppm (1 ppm=10^–6)的NO2气体的检测,对50 ppm的NO2的响应能够达到1.19,传感器的重复性较好,恢复率能够保持在76%以上,传感器的灵敏度是0.00281 ppm^-1,对浓度为5 ppm的NO2气体的响应时间是990 s,恢复时间是1566 s.此外,传感器在0°-45°的弯曲角度下仍表现出优异的电学特性与气体传感性能,所制备的器件具有相对稳定的导电性和较好的弯曲耐受性.     

Metal catalyst-assisted growth of GaN nanowires on graphene films for flexible photocatalyst applications

We report the growth of high-areal-density GaN nanowires on large-size graphene films using a nickel (Ni) catalyst-assisted vapor-liquid-solid (VLS) method. Before the nanowire growth, the graphene films were prepared on copper foils using hot-wall chemical vapor deposition and transferred onto SiO₂/Si substrates. Then, for catalyst-assisted VLS growth, Ni catalyst layers with thickness of a few nanometers were deposited on the graphene-coated substrates using a thermal evaporator. We investigated the effect of the Ni catalyst thickness on the formation of GaN nanowires. Furthermore, the structural and optical characteristics of GaN nanowires were investigated using X-ray diffraction, transmission electron microscopy, and photoluminescence spectroscopy. The GaN nanowires grown on graphene films were transferred onto polymer substrates using a simple lift-off method for applications as flexible photocatalysts. Photocatalysis activities of the GaN nanowires prepared on the flexible polymer substrates were investigated under bending conditions.     

高质量单层二硫化钼薄膜的研究进展

作为一种新型的二维半导体材料,单层二硫化钼薄膜由于其优异的特性,在电子学与光电子学等众多领域具有潜在的应用价值.本文综述了我们课题组在过去几年中针对单层二硫化钼薄膜的研究所取得的进展,具体包括:在二硫化钼薄膜的制备方面,通过氧辅助化学气相沉积方法,实现了大尺寸单层二硫化钼单晶的可控生长和晶圆级单层二硫化钼薄膜的高定向外延生长;在二硫化钼薄膜的加工方面,发展了单层二硫化钼薄膜的无损转移、洁净图案化加工、可控结构相变与局域相调控的方法,为场效应晶体管等电子学器件的制备与性能优化提供了基础;在二硫化钼异质结方面,研究了二硫化钼薄膜与其他二维材料形成的异质结的电学以及光电性质,为二维材料异质结的构筑和器件特性研究提供了实验参考;在二硫化钼薄膜功能化器件与应用方面,构筑了全二维材料、亚5 nm超短沟道场效应晶体管器件,验证了单层二硫化钼对短沟道效应的有效抑制及其在5 nm工艺节点器件中的应用优势;此外,利用制备的高质量单层二硫化钼和发展的器件洁净加工技术,实现了高性能柔性薄膜晶体管的集成,获得了超高灵敏度与稳定性的非接触型湿度传感器.我们在二硫化钼薄膜的制备、加工以及器件特性研究方面所取得的进展对于二硫化钼及其他二维过渡金属硫属化合物的基础和应用研究均具有指导意义.     

Flexible and transparent resistive switching devices using Au nanoparticles decorated reduced graphene oxide in polyvinyl alcohol matrix

We have investigated the resistive switching mechanism in solution processed Au-reduced graphene oxide-polyvinyl alcohol (PVA) nanocomposites on flexible substrates. Monodispersed gold nanoparticles (Au NPs) attached to reduced graphene oxide (RGO) in aqueous PVA solution have been synthesized using a novel one pot technique. The fabricated hybrid device showed high On/Off switching ratio more than 10³ with low operating voltages. The performance of hybrid device can be effectively enhanced over control RGO device. The switching mechanism occurs from the electrochemical reduction/oxidation process of partially reduced graphene oxide. The proposed devices reveal superior asymmetric bipolar resistive switching characteristics attractive for solution processable flexible and transparent non-volatile memory applications.     

Tunable and highly sensitive temperature sensor based on graphene photonic crystal fiber

Optical fiber temperature sensors have been widely employed in enormous areas ranging from electric power industry, medical treatment, ocean dynamics to aerospace. Recently, graphene optical fiber temperature sensors attract tremendous attention for their merits of simple structure and direct power detecting ability. However, these sensors based on transfer techniques still have limitations in the relatively low sensitivity or distortion of the transmission characteristics, due to the unsuitable Fermi level of graphene and the destruction of fiber structure, respectively. Here, we propose a tunable and highly sensitive temperature sensor based on graphene photonic crystal fiber (Gr-PCF) with the non-destructive integration of graphene into the holes of PCF. This hybrid structure promises the intact fiber structure and transmission mode, which efficiently enhances the temperature detection ability of graphene. From our simulation, we find that the temperature sensitivity can be electrically tuned over four orders of magnitude and achieve up to ～ 3.34×10^-3 dB/(cm·℃) when the graphene Fermi level is ～ 35 meV higher than half the incident photon energy. Additionally, this sensitivity can be further improved by ～ 10 times through optimizing the PCF structure (such as the fiber hole diameter) to enhance the light-matter interaction. Our results provide a new way for the design of the highly sensitive temperature sensors and broaden applications in all-fiber optoelectronic devices.