Frequency doubling of wavelength locked laser diOde with a transmission-type filter in a confocal optical configuratiOn

Direct frequency doubling of a wavelength locked laser diode with an optical bandpass filter in a confocal optical configuration is demonstrated. The wavelength of the laser diode was locked in single longitudinal mode oscillation and tuned to phase-matching wavelength of a quasi-phase-matched second harmonic generation device based on a LiTaO₃ Waveguide. Stable blue light of 4.2 mW was obtained for incident power of 48 mW.     

Dual-wavelength distributed Bragg reflector semiconductor laser based on a composite resonant cavity

We report a monolithic integrated dual-wavelength laser diode based on a distributed Bragg reflector (DBR) composite resonant cavity. The device consists of three sections, a DBR grating section, a passive phase section, and an active gain section. The gain section facet is cleaved to work as a laser cavity mirror. The other laser mirror is the DBR grating, which also functions as a wavelength filter and can control the number of wavelengths involved in the laser action. The reflection bandwidth of the DBR grating is fabricated to have an appropriate value to make the device work at the dual-wavelength lasing state. We adopt the quantum well intermixing (QWI) technique to provide low-absorption loss grating and passive phase section in the fabrication process. By tuning the injection currents on the DBR and the gain sections, the device can generate 0.596 nm-spaced dual-wavelength lasing at room temperature.     

Dual-wavelength distributed Bragg reflector semiconductor laser based on composite resonant cavity

We report a monolithic integrated dual-wavelength laser diode based on a distributed Bragg reflector (DBR) composite resonant cavity. The device consists of three sections, a DBR grating section, a passive phase section, and an active gain section. The gain section facet is cleaved to work as a laser cavity mirror. The other laser mirror is the DBR grating, which also functions as a wavelength filter and can control the number of wavelengths involved in the laser action. The reflection bandwidth of the DBR grating is fabricated to have an appropriate value to make the device work at the dual-wavelength lasing state. We adopt the quantum well intermixing (QWI) technique to provide low-absorption loss grating and passive phase section in the fabrication process. By tuning the injection currents on the DBR and the gain sections, the device can generate 0.596 nm-spaced dual-wavelength lasing at room temperature.     

Dual‐wavelength monolithic Y‐branch distributed Bragg reflection diode laser at 671 nm suitable for shifted excitation Raman difference spectroscopy

A dual‐wavelength monolithic Y‐branch distributed Bragg reflection (DBR) diode laser at 671 nm is presented. The device is realized with deeply etched surface DBR gratings by one‐step epitaxy. A maximum optical output power of 110 mW is obtained in cw‐operation for each laser cavity. The emission wavelengths of the device are 670.5 nm and 671.0 nm with a spectral width of 13 pm (0.3 cm⁻¹) and a mean spectral distance of 0.46 nm (10.2 cm⁻¹) over the whole operating range. Together with a free running power stability of ± 1.1% this most compact diode laser is ideally suited as an excitation light source for portable shifted excitation Raman difference spectroscopy (SERDS).     

Two-channel IR gas sensor with two detectors based on LiTaO3 single-crystal wafer

An infrared (IR) single-element detector based on a lithium tantalate (LiTaO₃) single-crystal wafer has been successfully fabricated. The preparation and design of the device are discussed and analyzed in detail. The processing of a thin LiTaO₃ wafer, the characterization of an IR filter window, and the assembly of the wafer and filter are explained. A LiTaO₃ sensor element, a CMOS amplifier, a narrow-band filter (which can be selected to operate within the appropriate spectral region), and the read-out circuits are set into a TO-18 vessel. Each TO-18-type detector offers a single channel (a single detection wavelength). Two TO-18 detectors with different filters, one acting as a detection channel and the other as a reference, a broadband light source, a circuit board and a flake of wire gauze are assembled and integrated into a gilded gas cell for the purpose of detecting ethene gas.     

Theoretical Study on Intra-Cavity Distributed-Bragg-Reflection Quasi-Phase-Matched Second-Harmonic Lasers

The characteristics of intra-cavity distributed Bragg reflector (DBR) quasi-phase-matched (IDQPM) second-harmonic-generation (SHG) lasers are theoretically studied. In the IDQPM-SHG laser, a QPM device and a DBR for feedback are separately fabricated on the same substrate with the QPM device placed between the DBR and a semiconductor laser. The threshold current of the IDQPM-SHG laser depends on the coupling efficiency between the laser diode and the QPM waveguide and the reflectivity of the DBR. The SH output of the IDQPM-SHG laser is strongly dependent on the generalized SHG conversion efficiency, x. This laser has the potential to attain an SH output over a 30-mW using a currently available 50-mW semiconductor laser for the fundamental light source, when highly efficient QPM device (x=2.2 W⁻¹) is used. Its tolerance for various deviations from the initial design and the problems to develop a commercially available IDQPM-SHG laser are also discussed.     

Wavelength stabilization of a distributed Bragg reflector laser diode by use of complementary current injection

We have demonstrated wavelength stabilization in an 821-nm AlGaAs three-section tunable distributed Bragg reflector (DBR) semiconductor laser diode (LD) that consists of active, phase-controlled, and DBR regions. We injected two separate, complementary currents into the active and the phase-controlled regions in the DBR-LD to suppress wavelength shift. This modulation method was applied to the LD fundamental wave in a second-harmonic-generation (SHG) laser, and the oscillating wavelength was maintained within the phase-matching acceptance range of the SHG device during modulation. A peak blue-violet light power of 62 mW was obtained for the ideal modulation waveform.     

Fast and sensitive time-multiplexed gas sensing of multiple lines using a miniature telecom diode laser between 1529 nm and 1565 nm

High-sensitive multi-species detection around 1550 nm using a modulated grating Y-branch, MG-Y, diode laser tunable between 1529 nm and 1565 nm is presented. The MG-Y diode laser is based on the Vernier effect of two modulated gratings, and exhibits quasi-continuous tuning over 36 nm. Multi-species detection is achieved by fast sequential scanning of single absorption lines of CH₄, CO, C₂H₂, and CO₂ distributed over the tuning range of the diode laser. The laser wavelength is scanned about 10 GHz around each absorption line for 5 ms and this is followed by a discrete large jump in operating wavelength to the next line.     

Efficient planar-type butt coupling of a proton-exchanged waveguide on a Z-cut LiTaO3 substrate

A half-wave thin film was formed on the facet of a proton-exchanged waveguide by the oblique deposition of Ta₂O₅. Planar-type butt coupling of the waveguide on the z-cut LiTaO₃ substrate to the AlGaAs laser diode in transverse electric mode oscillation was realized with coupling efficiency as high as 53%.     

Characteristics of THz-wave radiation using a monolithic grating coupler on a LiNbO3 crystal

Wide tunable terahertz (THz) wave generation was successfully demonstrated utilizing a grating coupler fabricated on the surface of a LiNbO₃ crystal which was pumped by a Q-switched Nd:YAG laser. In this paper, we report the detailed characteristics of the oscillation and the radiation including tunability, spatial and temporal coherency, directivity, and efficiency. Oscillation using a LiTaO₃ crystal was also performed, in which experimental phasematching condition values agreed well with the calculated one.     

Photorefraction and anisotropic light scattering in LiNbO3-Fe crystals

By holographic recording in LiNbO₃-Fe and LiTaO₃-Fe crystals a new light scattering effect has been observed with an optical indicatrix along the optical axis. The kinetics of the light scattering depends on the intensity, wavelength as well as the polarization of the incident light The holographic volume grating is created by the interference of an incident light and light scattered by crystal inhomogeneities.     

Continuous wave optical parametric oscillator for quartz-enhanced photoacoustic trace gas sensing

A continuous wave optical parametric oscillator, generating up to 300 mW idler output in the 3–4 μm wavelength region, and pumped by a fiber-amplified DBR diode laser is used for trace gas detection by means of quartz-enhanced photoacoustic spectroscopy (QEPAS). Mode-hop-free tuning of the OPO output over 5.2 cm^-1 and continuous spectral coverage exceeding 16.5 cm^-1 were achieved via electronic pump source tuning alone. Online monitoring of the idler wavelength, with feedback to the DBR diode laser, provided an automated closed-loop control allowing arbitrary idler wavelength selection within the pump tuning range and locking of the idler wavelength with a stability of 1.7×10^-3 cm^-1 over at least 30 min. Using this approach, we locked the idler wavelength at an ethane absorption peak and obtained QEPAS data to verify the linear response of the QEPAS signal at different ethane concentrations (100 ppbv-20 ppmv) and different power levels. The detection limit for ethane was determined to be 13 ppbv (20 s averaging), corresponding to a normalized noise equivalent absorption coefficient of 4.4×10^-7 cm^-1  W/Hz^1/2. PACS 42.55.Wd; 42.65.Yj; 42.62.Fi     

An improved model for computing the reflectivity of a AlAs/GaAs based distributed bragg reflector and vertical cavity surface emitting laser

In this paper, reflectivity of a Distributed Bragg Reflector (DBR) has been computed by considering the effects of changes of wavelength on the changes of the refractive index of the materials of DBR layers. The intrinsic losses of the materials have been included in the computation of the reflectivity of the DBR. It has been found that the effect of change of the wavelength on the refractive index of the DBR materials reduces the Full Width Half Maxima (FWHM) of the stop band significantly which is expected to improve the laser characteristics. If the FWHM is reduced, the thickness of the active layer of a VCSEL can also be reduced which will further reduce the threshold current of the device. It has been found that the intrinsic losses of the materials have a significant effect on the reflectivity of a DBR. It has also been found that peak reflectivity of a 20 pair AlAs/GaAs DBR reduces by 0.2% after including the intrinsic losses (with a value of the intrinsic losses α = 10 cm^?1).     

LaCaMnO3 thin film laser energy/power meter

A prototype laser energy/power meter was designed based on the anisotropic Seebeck effect of LaCaMnO₃ thin film grown on vicinal cut LaAlO₃ substrate. The optical response of this device to the pulsed laser and the chopped CW laser was measured from infrared to ultraviolet. The peak voltage of the measured signal shows a good linear relation to the laser energy and power in the measured range. It was shown that at 1064 nm wavelength, this prototype device demonstrates higher sensitivity than that of commercial device.     

A polarization-stabilized microchip laser using a resonant grating mirror

A resonant grating mirror was monolithically integrated to an ytterbium-doped ceramic Y₃Al₅O₁₂ microchip laser to produce a linearly polarized laser beam emitting at 1030 nm with a polarization contrast ratio up to 1000. The device was pumped with a fiber-coupled laser diode bar emitting 2-ms pulses at 50 Hz at 940 nm. Up to 13-W peak output power was obtained from 20-W absorbed pump power at room temperature. The obtained slope efficiency with respect to the absorbed pump power was about 80%. PACS 42.40.Lx; 42.55.-f; 42.60.Jf; 42.60.Lh; 42.55.Xi; 42.70.Hj     

Tunable single-mode pulsed Ti3+:Sapphire laser injection-seeded by a continuous-wave Cr3+:LiSrAlF6 laser

Spectrally pure high-power tunable single-mode operation of a pulsed Ti³⁺:sapphire laser by a tunable injection-seeding is reported. The injection laser was a cw diode laser pumped, spectrally narrowed tunable Cr³⁺:LiSrAlF₆ (Cr³⁺:LiSAF) laser with a grating in the auxiliary cavity. Single-mode tunable operation of a pulsed Ti³⁺: sapphire ring oscillator was obtained at different wavelengths in the range between 818 nm and 848 nm with a typical linewidth of 0.006 cm^-1. To extend the applicability of this operation to a differential absorption lidar system, the single-mode Ti³⁺:sapphire oscillator output was amplified and a high energy output of 38 mJ was obtained with the same linewidth.     

Rapid shifted excitation Raman difference spectroscopy with a distributed feedback diode laser emitting at 785 nm

A distributed feedback (DFB) laser diode emitting at 785 nm was tested and applied as a light source for shifted excitation Raman difference spectroscopy (SERDS). Due to the physical properties of the laser diode, it was possible to shift the emission wavelength by 8 cm^-1 (0.5 nm) required for our SERDS measurements by simply changing the injection current. The internal grating ensured single mode operation at both wavelength with the frequency stability of ±0.06 cm^-1 (0.004 nm) required for high resolution Raman spectroscopic applications. The shifted spectra were used for calculating enhanced Raman spectra being obscured by a strong scattering background. A 16 dB (≈38 fold) improvement of the signal-to-background noise S̄/σ_B was demonstrated using blackboard chalk as a sample. The tunable DFB laser is a versatile excitation source for SERDS, which could be used in any dispersive Raman system to subtract fluorescence contributions and scattering background. PACS 82.80.Gk; 42.55.-f; 42.64.Fi     

Spatial and spectral filtering of tapered lasers by using tapered distributed Bragg reflector grating

A 1040 nm tapered laser with tapered distributed Bragg reflector (DBR) grating is designed and fabricated. By designing the grating with tapered layout, the tapered DBR grating exhibits the scattering effect on side backward-traveling waves, thus achieving additional suppression of parasitic oscillation. Under the suppression of parasitic oscillation, the spatial and spectral characteristics of the tapered laser are improved. The experimental results show that a near-Gaussian far-field distribution and a kink-free P-I characteristics are achieved, and a single peak emission with a wavelength of 1046.84 nm and a linewidth of 56 pm is obtained.     

HR-coated facet effect on the spectral characteristics of a three-section DBR tunable laser

High-relfection (HR)-coated facet effects on the spectral characteristics of a three-section distributed Bragg reflector (DBR) tunable laser are investigated theoretically, in which the output power emits to the DBR section. It is found that the output power to the DBR sectionP _DBR compared to the cleaved facet output powerP ₀ is nearly constant to some degree with increasing tuning current. Owing to the high-Q resonator, the HR-coated DBR laser showed a decrease in spectral linewidth. However, there is still linewidth broadening of the HR-coated DBR laser even though the rate of increase is smaller than that of the cleaved-facet DBR laser. In the case of output power emission to the DBR section, it is thought that the HR-coated effect can overcome the decrease in output power under frequency tuning, which is one of the most important drawbacks of DBR laser performance.     

Self-adaptive, narrowband tuning of a pulsed optical parametric oscillator and a continuous-wave diode laser via phase-conjugate photorefractive cavity reflectors: verification by high-resolution spectroscopy

A dynamic self-adaptive Bragg grating formed in a photorefractive crystal is shown to be a convenient way to attain single-longitudinal-mode (SLM) operation and narrowband tuning both in a pulsed, injection-seeded optical parametric oscillator (OPO) and in a continuous-wave (cw) extended-cavity diode laser. The pulsed OPO cavity comprises a Rh:BaTiO₃ photorefractive (PR) crystal, a periodically poled KTiOPO₄ nonlinear-optical crystal, and a dielectrically-coated end mirror. A continuous-wave seed beam at 820–850 nm from a tunable SLM diode laser traverses firstly the Rh:BaTiO₃ crystal and then is retro-reflected by the end mirror; this creates a wavelength-selective Bragg grating reflector in the PR crystal, thereby completing the OPO cavity. The cavity stays automatically resonant with the seed radiation, with no need to actively control its length or to make any other mechanical adjustment. One form of injection seeder comprises a novel extended-cavity diode laser (ECDL) design incorporating a self-pumped photorefractive phase-conjugate reflector and a compact, high-finesse tunable intracavity ring filter. This combination facilitates robust tunable single-frequency operation with narrow optical bandwidth. The performance characteristics of the OPO and the ECDL are evaluated by recording high-resolution atomic and molecular spectra. Notably, fluorescence-detected sub-Doppler two-photon excitation at 822 nm, of the 8S ←6S transition in atomic Cs, provides a crucial linewidth test.