Optical phonons in Ge quantum dots obtained on Si(111)

The Raman light scattering from optical phonons of Ge quantum dots grown by molecular beam epitaxy on a Si(111) surface is studied. A series of Raman lines related to the quantization of phonon spectrum is observed. It is shown that phonon frequencies are adequately described in terms of the elastic properties and the dispersion of the optical phonons of bulk Ge. The strain experienced by the Ge quantum dots is estimated.     

Compositional fluctuations in isotopic solid solutions

The effect of compositional fluctuations in isotopic solid solutions on the frequency shift and broadening of Raman lines is investigated. The broadening of the optical phonon line depends on the composition throughout the concentration range of the binary solid solution. It is shown that the line broadening is caused by elastic phonon scattering from compositional fluctuations. The type, size, and number of fluctuations responsible for the scattering are determined, and the dependences of these quantities on the concentration of solid solution components are established.     

n-SiC拉曼散射光谱的温度特性

测量了采用离子注入法得到掺N的n-SiC晶体从100—450 K的拉曼光谱. 研究了SiC一级拉曼谱、电子拉曼散射谱及二级拉曼谱的温度效应. 实验结果表明,大部分SiC一级拉曼峰会随温度升高向低波数方向移动,但声学模红移(峰值位置向低频方向移动)的幅度较光学模小. 重掺杂4H-SiC的纵光学声子等离子体激元耦合(LOPC)模频率随温度升高表现出先蓝移(峰值位置向高频方向移动)后红移的变化趋势,表明LOPC模的温度特性不仅会受到非简谐效应的影响,还与实际已离化杂质浓度有关. 电子拉曼散射峰线宽随温度升高而增 关键词： 碳化硅 温度 纵光学声子等离子体激元耦合模 电子拉曼散射     

一种基于荧光材料的聚合物白光发光二极管

制备了一种基于荧光聚合物共混的单发光层聚合物白光发光二极管.器件结构为铟锡氧化物/苯磺酸掺杂聚乙烯基二氧噻吩/发光层/ 1,3,5-三(N-苯基-2-苯并咪唑-2)苯41/Ba/Al,蓝光材料芴-氟化喹喔啉共聚物(PF-BPFQ5)、绿光材料苯基取代的聚对苯乙炔(P-PPV)和红光材料聚(2-甲氧基-5-(2′-乙基己氧基)-1,4-对苯乙炔)(MEH-PPV)共混为发光层.当PF-BPFQ5,P-PPV,MEH-PPV的质量比例为100∶06∶06时,获得标准的白光,色坐标为（033 关键词： 聚合物发光二极管 白光 共混     

Phonon properties of rare earth ytterbium pnictides

We report for the first time the complete phonon dispersion curves for the ytterbium pnictide compounds (YbN, YbP and YbAs) using a breathing shell model to establish their predominant ionic nature. The calculated results also show that this group of rare earth compounds does not show any elastic and phonon anomalies which are the characteristic features of other rare earth compounds. We emphasize the need for further Raman and neutron scattering measurements.     

Resonance Raman scattering of excitonic polaritons by LO and acoustic phonons in ZnTe

We have observed dispersive two-phonon Raman scattering of polaritons by LO and acoustic phonons near the lowest exciton state of ZnTe. From the Stokes shifts of these Raman lines, it has been found that the scattering process switches from an acoustic phonon followed by one LO phonon to the reversed one: a LO phonon followed by an acoustic one.     

Inelastic X-ray scattering: new possibilities for Raman spectroscopy

Inelastic X-ray scattering with meV resolution has recently become available for studies of dynamical properties and elementary excitations in solids. Contrary to Raman spectroscopy at visible wavelengths, which in first order is limited to the Brillouin-zone center, the wave vectors in hard X-ray Raman scattering are very large, and the crystal-momentum transfer to elementary excitations, whose energies may range from a few meV up to several eV, can be tuned continuously across the whole Brillouin zone. This paper reviews new and unique possibilities offered by X-ray Raman spectroscopy for crystalline solids, such as phonon-dispersion measurements (GaN), the determination of phonon self-energies (isotopically mixed diamond), and resonance effects and studies of electronic excitations (copper oxides). Received: 19 October 2001 / Accepted: 12 December 2001 / Published online: 27 March 2002 / Published online: 27 March 2002 RID="*" ID="*"Present address: Agilent Technologies Deutschland GmbH, Herrenberger Str. 130, 71034 B?blingen, Germany     

First-principles study of the phonon spectrum of ɛ-GaSe

The phonon spectrum and phonon density of states of ?-GaSe layered semiconductor have been studied from the first principles in the linear-response approximation. The elastic constants and acoustic velocities along and across layers have been determined. The study of the equilibrium structure and phonon spectrum of the (0001) surface of ?-GaSe has demonstrated that the volume and surface structural dynamic properties of these crystals differ insignificantly. The calculated frequencies and symmetries of the phonon modes in the center of the Brillouin zone are in good agreement with the experimental data obtained from the Raman scattering and infrared spectra.     

Elastic and vibrational properties of cobalt to 120 GPa

Impulsive stimulated light scattering and Raman spectroscopy measurements have been made on hcp cobalt to a static pressure of 120 GPa. We find that at pressures above 60 GPa the shear elastic modulus and the Raman frequency of the E(2g) transverse optical phonon exhibit a departure from a linear dependence on density. We relate this behavior to a collapse of the magnetic moment under pressure that has been predicted theoretically, but until now not observed experimentally.     

Nondestructive evaluation of high‐temperature elastic modulus of 3C‐SiC using Raman scattering

A nondestructive method is reported to measure the high‐temperature modulus of 3C‐SiC coating and bulk samples using Raman scattering. Within the temperature range from 20 °C to 900 °C, both the longitudinal optical and transverse optical phonon frequencies decrease linearly as the temperature increases. The elastic moduli derived from the longitudinal optical phonon agree with previous results measured using other techniques. It is further shown that the grain size and impurity only have a negligible effect on the elastic modulus of 3C‐SiC. Copyright © 2011 John Wiley & Sons, Ltd.     

Raman scattering using vortex light

We re-examine the theory of Raman scattering in cubic crystals. The unconventional vector potential of vortex light leads to new selection rules. We show that in this novel optical process, (a) silent phonon modes become active and (b) scattering tensors change for ordinary Raman active phonon modes. Calculation based on a simplified model shows that the vortex Raman scattering intensity can be comparable with that of ordinary Raman process.     

The Raman spectra of CdI2

Raman scattering experiments on CdI₂ at high sensitivity give evidence of several new lines in addition to well known ones. The measurements performed at different temperatures allow us to distinguish between one phonon spectrum and two phonon one. The assignment of the new lines associated to one phonon scattering is also discussed.     

Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN

The longitudinal optical (LO) phonon energy in AlGaN/GaN heterostructures is determined from temperature-dependent Hall effect measurements and also from Infrared (IR) spectroscopy and Raman spectroscopy. The Hall effect measurements on AlGaN/GaN heterostructures grown by MOCVD have been carried out as a function of temperature in the range 1.8-275 K at a fixed magnetic field. The IR and Raman spectroscopy measurements have been carried out at room temperature. The experimental data for the temperature dependence of the Hall mobility were compared with the calculated electron mobility. In the calculations of electron mobility, polar optical phonon scattering, ionized impurity scattering, background impurity scattering, interface roughness, piezoelectric scattering, acoustic phonon scattering and dislocation scattering were taken into account at all temperatures. The result is that at low temperatures interface roughness scattering is the dominant scattering mechanism and at high temperatures polar optical phonon scattering is dominant.     

Multiphonon resonant Raman scattering in N‐doped ZnO

Multiphonon resonant Raman scattering in N‐doped ZnO films was studied, and an enhancement of the resonant Raman scattering process as well as longitudinal optical (LO) phonon overtones up to the sixth order were observed at room temperature. The resonant Raman scattering intensity of the 1LO phonon in N‐doped ZnO appears three times as strong as that of undoped ZnO, which mainly arises from the defect‐induced Raman scattering caused by N‐doping. The nature of the 1LO phonon at 578 cm⁻¹ is interpreted as a quasimode with mixed A₁ and E₁ symmetry because of the defects formed in the ZnO lattice. In addition, the previously neglected impurity‐induced two‐LO‐phonon scattering process was clearly observed in N‐doped ZnO. Copyright © 2009 John Wiley & Sons, Ltd.     

Raman scattering from microcrystals

This review discusses the size effects on Raman scattering from microcrystals. For ionic microcrystals, the existence of surface phonon modes is predicted from electromagnetic theories. It is shown that Raman spectroscopy is very effective to detect the surface phonon modes. The size effects on nonpolar phonons in covalent microcrystals can also be studied by Raman spectroscopy. However, the relaxation of the wave-vector selection rule or the phonon confinement explains only some of the experimental data. Development of lattice dynamical theories of Raman scattering from microcrystals including surface effects is highly required. Enhancement of Raman intensities arising from the excitation of electromagnetic normal modes of microcrystals is also discussed.     

Raman scattering under extreme conditions

Raman scattering is a versatile and powerful technique and has been widely used in modern scientific research and vast industrial applications. It is one of the fundamental experimental techniques in condensed matter physics, since it can sensitively probe the basic elementary excitations in solids like electron, phonon, magnon, etc. The application of extreme conditions(low temperature, high magnetic field, high pressure, etc.) to Raman scattering, will push its capability up to an unprecedented level, because this enables us to look into new quantum phases driven by extreme conditions, trace the evolution of the excitations and their coupling, and hence uncover the underlying physics. This review contains two topics.In the first part, we will introduce the Raman facility under extreme conditions, belonging to the optical spectroscopy station of Synergetic Extreme Condition User Facilities(SECUF), with emphasis on the system design and the capability the facility can provide. Then in the second part we will focus on the applications of Raman scattering under extreme conditions to a variety of condensed matter systems such as superconductors, correlated electron systems, charge density waves(CDW) materials, etc. Finally, as a rapidly developing technique, time-resolved Raman scattering will be highlighted here.     

Pulse-shape distortion in transmission experiments with incoherent phonons in isotropic solids due to elastic scattering

Assuming homogeneously distributed elastic scattering centers in an isotropic dielectric plate, the transmission and distortion of phonon pulses, that are transmitted from a radiator element to a centered detector element at the opposite face, are investigated theoretically. Analytic expressions are derived for the singlescattered phonon signal due to three different phenomenological scattering characteristics: isotropic scattering, preferential forward scattering, and preferential forward/backward scattering. In particular, we find that the asymptotic decay of the scattered phonon signal depends on the associated scattering characteristic. Numerical results are given for the excitation by a delta pulse using all three scattering characteristics. As a special case, the pulse-shape distortion of a rectangular pulse of 100 ns duration is treated in more detail. Parameter is the ratio of phonon mean free path to plate thickness.     

Absolute efficiency and dispersion of Raman scattering by phonons in silicon

We have measured the absolute Raman efficiency for first order scattering of the optical zone center phonon with two different incident photon energies (1.16 and 0.94 eV) by comparison with the Raman scattering from diamond. A value significantly lower than the experimental data published previously in this region has been found. For the first order scattering no dispersion of the scattering efficiency has been observed at the indirect gap, in contrast to the second order scattering which shows a pronounced resonance behaviour in this energy range.     

Interaction of optical phonons with anisotropic imperfections

Inelastic (Raman) light scattering by phonons interacting with anisotropic imperfections is investigated. Three different kind of disorder-induced defects (point, linear and planar) have been considered. The optical phonon width and line shape are found to depend importantly on the dimension of the imperfections. There is a close correspondence between the scale of the imperfection and the phonon line shape observed in the Raman scattering experiments. The dependence of the phonon frequency shift and width on the defect concentrations is calculated, and the critical concentrations at which the optical phonon can no longer be observed are determined. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 12, 817–822 (25 December 1997) Published in English in the original Russian journal. Edited by Steve Torstveit.