低维铁电材料研究进展

铁电材料是一类重要的功能材料,铁电元件的小型化、集成化是当今铁电材料发展的一大趋势.但是尺寸效应、表面效应等的存在制约了传统块体铁电材料在纳米尺度下的应用,因而低维度纳米材料中的铁电性能研究成为当前材料科学领域的研究热点之一.本文综述了近年来理论和实验上关于低维铁电材料的探索,包括二维范德瓦耳斯层状铁电材料、共价功能化低维铁电材料、低维钙钛矿材料、外界调控以及二维"铁电金属"等材料的理论预言与实验铁电性的观测;也提出一些物理新机制来解释低维下的铁电性;最后对该领域今后的发展进行了展望.     

First-principles study on magnetism of different dimensional Ru systems

The magnetism, the magnetocrystalline anisotropy and the optical properties of the monolayer and atomic chain of 4d transition-metal Ru are investigated by using the full-potential linearized-augmented-plane-wave method in a generalized gradient approximation. The magnetic moments are 1.039~μ __B/atom and 1.130~μ_B/atom for the monolayer and atomic chain, respectively. Both systems have large magnetocrystalline anisotropy energy (MAE). The magnetic easy axis is normal to the monolayer and perpendicular to the chain axis in the atomic chain. The optical properties of the two low-dimensional Ru systems are investigated by calculating the complex optical conductivity tensor. Both systems exhibit anisotropy in photoconductivity, especially for the atomic chain. The physical origins of MAE and photoconductivity are studied based on electronic structures. It is found that the changes in crystal field caused by different symmetry-breaking mechanisms in the two low-dimensional Ru systems result in MAE through spin--orbit coupling, while the anisotropy in photoconductivity mainly comes from the crystallographic anisotropy.     

Sonochemistry-assisted microwave synthesis and optical study of single-crystalline CdS nanoflowers

Well-defined flower-like CdS nanostructures have been synthesized by applying ultrasound and microwave simultaneously, which consist of hexagonal nanopyramids and/or nanoplates depending on different sulfur sources. It is shown that the synergistic effect of microwave and sonochemistry is the main mechanism for the formation of the nanoflowers. Optical characterization of the nanoflowers shows a large blue-shift up to 100 nm in comparing with simple low-dimensional CdS nanostructures. This structure induced shift in optical properties may have potential applications in optoelectronics devices, catalysis, and solar cells.     

有机自组装低维圆偏振发光材料的研究进展

具有圆偏振发光(CPL)性质的材料由于在3D显示、光学存储以及光学防伪等领域的重要应用,近年来越来越受到研究人员的关注。超分子策略能够将不同类型的分子组装成具有独特功能的低维(零维、一维和二维等)结构,因而成为构筑CPL活性有机低维材料的最有效方法之一。本文从超分子自组装驱动力的角度综述了近几年自组装CPL活性有机低维材料的研究进展。首先,本文系统地总结了现阶段设计自组装CPL活性有机低维材料的策略,其次重点讨论了这类材料的性能及应用,最后探讨了这一领域未来的发展机遇和挑战。     

Electronic and optical properties of single-layered silicon sheets

The electronic and optical properties of a number of single-layered silicon sheets are investigated using density functional calculations. The energy bands of silicon sheets are found to possess direct gaps and thus facilitate the material’s potential applications in optoelectronics. Bridging one-dimensional silicon chains and three-dimensional bulk silicon, two-dimensional single-layered silicon sheets present unique dimension and orientation dependencies of band structures and imaginary dielectric functions, which offer tunable band gaps and peaks in the dielectric functions associated with symmetry breaking and quantum confinement. Our study is expected to facilitate the understanding of general low-dimensional materials and their applications.     

Epitaxy of III-nitrides on two-dimensional materials and its applications

III-nitride semiconductor materials have excellent optoelectronic properties, mechanical properties, and chemical stability, which have important applications in the field of optoelectronics and microelectronics. Two-dimensional (2D) materials have been widely focused in recent years due to their peculiar properties. With the property of weak bonding between layers of 2D materials, the growth of III-nitrides on 2D materials has been proposed to solve the mismatch problem caused by heterogeneous epitaxy and to develop substrate stripping techniques to obtain high-quality, low-cost nitride materials for high-quality nitride devices and their extension in the field of flexible devices. In this progress report, the main methods for the preparation of 2D materials, and the recent progress and applications of different techniques for the growth of III-nitrides based on 2D materials are reviewed.     

限域量子态调控研究

电子、激子和声子等量子态在固体中的行为早已被人们所熟知. 然而，当体系的尺寸只有纳米量级的时候，已有的固体理论常常不能适用，需要新的低维物理理论的建立. 我们系统研究了低维体系限域量子态（包括电子、激子和声子）的行为对环境、应力、压力及光的响应和性质的调控. 较早认识到低维体系之显著的表面-体积比对量子态性质调控之有效性，系统地揭示了低维体系的一系列由表面和应力决定的新颖性质，证明了低维体系的表面和应力效应同量子限域效应同等重要. 本文概况了如下五个方面的结果：（1）一种使用应力效应调控电子能带结构的方法和（2）一种使用表面效应调控电子能带结构的方法（这两个方法都可将低维体系能带从间接能隙调控至直接能隙能带结构）；（3）一种低维体系表面掺杂方法，该方法将在低维体系掺杂中取代传统方法；（4）量子点表面诱导的光致异构现象；（5）基于表面自催化半导体低维结构的形成机理. 希望我们的研究工作有助于促进低维体系在光电子、纳电子、环境、能源、生物和医学等领域的应用.     

半导体微结构物理效应及其应用讲座第三讲半导体的激子效应及其在光电子器件中的应用

人们对半导体中的电子空穴对在库仑互作用下形成的激子态及其有关的物理性质进行了深入研究.激子效应对半导体中的光吸收、发光、激射和光学非线性作用等物理过程具有重要影响,并在半导体光电子器件的研究和开发中得到了重要的应用.与半导体体材料相比,在量子化的低维电子结构中,激子的束缚能要大得多,激子效应增强,而且在较高温度或在电场作用下更稳定.这对制作利用激子效应的光电子器件非常有利.近年来量子阱、量子点等低维结构研究获得飞速的进展,已大大促进了激子效应在新型半导体光源和半导体非线性光电子器件领域的应用.     

Photoconductivity on europium oxyde single crystals and thin films

In this paper, results of photoconductivity measurements on four EuO samples are given. Low frequency photoconductivity versus temperature (10°K < T < 300°K) and magnetic field H is investigated for two wavelengths: 6600 Å and 9000 Å. The photoconductivity kinetic is also described, and is characterized by a distribution in decay times. Temperature, magnetic field and carrier concentration have small effects on this kinetic. Quenching effect is obtained by adding a continuous illumination (λ₂) to the weak modulated light (λ₁). The kinetic is strongly affected by quenching and becomes more simple. Quenching effect is maximum for the wavelength associated to the 4?⁷–4?⁶ 5d, transition. In contrast to the Penney-Kasuya[1] model we propose another one in which the conduction of equilibrium carriers as photo-excited carriers takes place in a broad band. The variation of low frequency photoconductivity versus temperature is attributed to the mobility variation. This variation agrees well with the model of mobility controlled by spin-disorder. The photoconductivity kinetic is interpreted by a three levels recombination model: the conduction band, the 4f levels and a distribution of trap levels. The lack of variation of photoconductivity decay in the range of metal-semiconductor transition is discussed.     

Deep level states and negative photoconductivity in n-ZnO/p-Si hetero-junction diodes

Negative photoconductivity (NPC) was observed in n-ZnO/p-Si heterojunction diode grown by ultra-high vacuum sputtering method under nitrogen ambient. Under the illumination of ultra-violet light, positive photoconductivity was observed at low bias voltages, whereas NPC was observed at high bias voltages. The defect states in the ZnO layers grown on Si were analyzed by photoluminescence and deep level transient spectroscopy measurements. Two deep levels were measured at E_c-0.51 eV and E_c-0.54 eV, which might be originated from oxygen vacancy and nitrogen atom related defects, respectively. Based on the simulation of band diagram, the defect states were located below Fermi level at zero bias voltage. However, as increasing the bias voltages, NPC was observed due to the increase of empty defect states. This analysis allowed us to consider the possibility that the NPC phenomenon in n-ZnO/p-Si heterojunction diode is originated dominantly from the defect states as a carrier recombination center in ZnO layer.     

低维光电材料缺陷与界面增强拉曼散射

近年来,一系列新型低维光电材料相继涌现,展现出优异的性能。这些光电材料与表面增强拉曼散射(SERS)技术相结合,显示出巨大的应用潜力,有望成为高灵敏SERS活性基底。缺陷与界面调控是低维光电材料SERS应用的重要策略,本文将重点介绍新型低维光电材料缺陷与界面增强拉曼散射的种类和增强机理。通过对缺陷与界面增强拉曼散射的应用和研究前景的展望,启发人们对SERS研究的再思考和再认识。     

Synthesis and Raman scattering of GaN nanorings, nanoribbons and nanowires

Low-dimensional GaN materials, including nanorings, nanoribbons and smooth nanowires have been synthesized by reacting gallium and ammonia using Ag particles as a catalyst on the substrate of MgO single crystals. They were characterized by field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). EDX, XRD indicated that the low-dimensional nanomaterials were wurtzite GaN. New features are found in Raman scatterings for these low-dimensional GaN materials, which are different from the previous observations of GaN materials. Received: 16 November 2000 / Accepted: 17 November 2000 / Published online: 21 March 2001     

光电子技术及其进展

综述了光电子学的产生及其发展，提出了光电子技术的几个发展方向和研究热点。对各种新型激光器、硅基光电子技术、有机聚合物光电子材料、光互连、光计算技术、大容量光存储、生物医学中的光电子技术等内容进行了简要的介绍。     

Electro-chemical manifestation of nanoplasmonics in fractal media

Electrodynamics of composite materials with fractal geometry is studied in the framework of fractional calculus. This consideration establishes a link between fractal geometry of the media and fractional integrodifferentiation. The photoconductivity in the vicinity of the electrode-electrolyte fractal interface is studied. The methods of fractional calculus are employed to obtain an analytical expression for the giant local enhancement of the optical electric field inside the fractal composite structure at the condition of the surface plasmon excitation. This approach makes it possible to explain experimental data on photoconductivity in the nano-electrochemistry.     

Photoconductivity of 2D electron systems in magnetic field

According to recent photoconductivity measurements in 2D electron semiconductor systems in magnetic fields normal to the 2D plane, the photoconductivity as a function of magnetic field exhibits oscillations in the region of fields much weaker than those necessary for the observation of the Shubnikov-de Haas effect. In this paper, the aforementioned oscillations are interpreted as a two-dimensional analogue of magnetophoton (phonon) oscillations studied in detail by different authors on 3D samples.     

低维纳米材料热电性能测试方法研究

通过近几十年的研究,人们对于块体及薄膜材料的热电性能已经有了较全面的认识,热电优值ZT的提高取得了飞速的进展,比如碲化铋相关材料、硒化亚铜相关材料、硒化锡相关材料的最大ZT值都突破了2.但是,这些体材料的热电优值距离大规模实用仍然有较大的差距.通过理论计算得知,当块体热电材料被制作成低维纳米结构材料时,比如二维纳米薄膜、一维纳米线,热电性能会得到显著的改善,具有微纳米结构材料的热电性能研究引起了科研人员的极大兴趣.当块体硅被制作成硅纳米线时,热电优值改善了将近100倍.然而,微纳米材料的热电参数测量极具挑战,因为块体材料的热电参数测量方法和测试平台已经不再适用于低维材料,需要开发出新的测量方法和测试平台用来研究低维材料的热导率、电导率和塞贝克系数.本文综述了几种用于精确测量微纳米材料热电参数的微机电结构,包括双悬空岛、单悬空岛、悬空四探针结构,详细介绍了每一种微机电结构的制备方法、测量原理以及对微纳米材料热电性能测试表征的实例.     

Rectification effect in poly-p-xylylene-cadmium sulfide graded nanocomposites

The hybrid poly-p-xylylene-cadmium sulfide nanocomposites characterized by gradients of concentrations and sizes of CdS nanoparticles along the lines of an applied electric field have been synthesized using the vapor deposition polymerization in an inhomogeneous electric field. The maximum concentration of cadmium sulfide can exceed 10 vol %, while the average effective sizes of the nanoparticles depend on the concentration and do not exceed 5 nm. The synthesized thin-film nanocomposites exhibit a quantum confinement effect. According to the estimates obtained from the shift of the absorption band edge, the radius of nanoparticles is 2.7 nm near the negative electrode and 3.5 nm near the positive electrode. It has been found that the sample formed in an electric field of 10 kV/cm manifests a rectification effect, which can be associated with the gradient of nanoparticle sizes. The measurements of current-voltage characteristics and photoconductivity have demonstrated that the synthesized samples possess high photoconductivity. The photocurrent in the sample prepared in an electric field of 10 kV/cm can exceed the dark current by two orders of magnitude, and the rectification effect in this case disappears.     

Radiofrequency Photoconductivity in Hg1−xCdxTe Based Heterostructures

JETP Letters - In this paper, we report on observation of a new effect—asymmetric in a magnetic field photoconductivity stimulated by radiofrequency pulses in heterostructures based on thick...     

Study of photoconductive and dielectric dependence of gain and phase-shift in the coupled unidirectional ring resonators based on non-degenerate wave-mixing in photorefractive materials

Photoconductive and dielectric dependence of gain and phase-shift in the coupled unidirectional photorefractive ring resonators (UPRR) have been analyzed for the case of non-degenerate two-wave mixing in photorefractive materials by employing the plane-wave approximation method. The effect of photoconductivity and dielectric constant of the coupled photorefractive crystals (A and B) on the gain and phase-shift in the coupled UPRR have also been studied in details. It has been found that for a given value of the photoconductivity of crystal B, the gain in the primary resonator can be enhanced by selecting lower value of frequency detuning of the same resonator and PR crystal A of higher photoconductivity in the coupled UPRR. But reverse of the case is found for the enhancement of phase-shift. Such enhancement of the gain and phase-shift in the primary resonator are responsible for build-up and non-reciprocal energy transfer between the modes of the internal oscillations, which greatly improves the performance of the coupled UPRR.     

Effect of excitation intensity and electric field on the photoconductivity relaxation in CdxHg1−x Te/GaAs polycrystalline layers

The photoconductivity relaxation and the stationary photoconductivity in the n-Cd_0.8Hg_0.2Te compensated polycrystalline layers at T=300 K have been investigated as a function of the light intensity and the strength of applied electric field E. It is demonstrated that, at low excitation intensities, the saturation of stationary photoconductivity and a decrease in the relaxation time with an increase in E are caused by the minority carrier extraction. The effect of minority carrier extraction is analyzed with due regard for the internal electric field of potential barriers in intergranular layers. It is assumed that the features of nonequilibrium-carrier recombination, which proceeds through several channels and depends on the excitation intensity and extraction electric field strength, can stem from the polycrystalline structure of the Cd_0.8Hg_0.2Te layers.