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利用皮秒Nd:YAG脉冲激光器作为激发光源,测量出光子能量介于1.36 μm (0.912 eV)—1.80 μm (0.689 eV)之间的硅间接跃迁双光子吸收系数谱.尽管此波段范围内的激光光子能量小于硅间接带隙,但当激光辐照在硅基光电二极管受光面时,在二极管两电极端仍然探测到了显著的脉冲光伏信号.光伏信号峰值强度与入射光强呈二次幂函数关系,表明其是双光子吸收过程.采用pn结等效结电容充放电模型,将光伏响应信号峰值与入射光强相关联,从中提取出硅的间接跃迁双光子吸收系数,改变入射波长得到系数谱.研究表明: 相似文献
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从实验上证实Hg0.695Cd0.305Te 光电二极管空间电荷区中存在双光子吸收的Franz-Keldysh效应.利用一个皮秒Nd:YAG激光器抽运的光学参量产生器和差频产生器作为激发光源,测量了入射波长为λ0=7.92μm的脉冲激光所激发的光响应随入射光强的变化关系.脉冲光响应峰值强度随入射光强的增大呈现二次幂函数增强趋势.采用等效RC电路模型将脉冲光伏信号峰值与入射光强相关联,得到空间电荷区中强电场下单光束
关键词:
Franz-Keldysh效应
碲镉汞
双光子吸收
脉冲光伏信号 相似文献
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利用响应理论方法,研究了新近合成的以二-(苯乙烯基)苯为主干的多分枝有机物的双光子吸收特性。结果表明这些多维有机分子显示了较好的双光子吸收特性,其中A-π-A型的有机分子具有较大的双光子吸收截面,进一步说明了到底是对称型的还是不对称型的有机分子具有大的双光子吸收截面还与分子的π中心有关。 相似文献
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利用响应理论方法,研究了新近合成的以二-(苯乙烯基)苯为主干的多分枝有机物的双光子吸收特性.结果表明这些多维有机分子显示了较好的双光子吸收特性,其中A-π-A型的有机分子具有较大的双光子吸收截面,进一步说明了到底是对称型的还是不对称型的有机分子具有大的双光子吸收截面还与分子的π中心有关. 相似文献
5.
从实验上证实Hg0.695Cd0.305Te 光电二极管空间电荷区中存在双光子吸收的Franz-Keldysh效应.利用一个皮秒Nd:YAG激光器抽运的光学参量产生器和差频产生器作为激发光源,测量了入射波长为λ0=7.92μm的脉冲激光所激发的光响应随入射光强的变化关系.脉冲光响应峰值强度随入射光强的增大呈现二次幂函数增强趋势.采用等效RC电路模型将脉冲光伏信号峰值与入射光强相关联,得到空间电荷区中强电场下单光束 相似文献
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半导体中的双光子吸收(2PA)与能隙的三次方的倒数(Eg-3)成正比,这一关系限制了在宽带隙半导体中获得双光子吸收系数。但是已知在输入波长迥异的高度非简并情况下,双光子吸收率较简并状态会有大幅提升。在飞秒和皮秒脉冲下的泵浦探测传输实验中证实了几种直接能隙半导体具有这种性质。发现在许多直接能隙半导体中,非简并双光子吸收率较简并情况下可增强约100倍。在GaAs中,观察到双光子吸收系数达到1cm/MW,这么大的系数以前只在窄带半导体如InSb中观察到过。基于这种作用可以利用传统的半导体光电二极管获得敏感的选通探测。采用标准的GaN和GaAs光电二极管和高达14∶1的能量比的极度非简并光子证实了此技术。此外,还采用强紫外选通脉冲探测弱红外辐射,如采用GaN光电二极管,最小可探测红外脉冲能量可低至20pJ,而现有的标准制冷型MCT探测器的最小可探测能量为200pJ。我们现在还证实这种方法也可在连续波探测中应用。值得注意的是,这个过程没有用到类似χ(2)上转换的红外晶体或相位匹配。在本报告中将介绍怎样将这种探测技术用于其他半导体,以及如何优化器件的几何结构以满足实用化探测要求。 相似文献
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在一定条件SF6气体氛围中,硅可在飞秒激光辐照区产生m量级的尖峰结构。针对不同尖峰高度的微构造硅,在不同温度下退火,采用电子蒸发的方法在正反面分别镀上铝电极,制备出了飞秒激光微构造光电二极管,并测试了其光电响应。实验结果表明:飞秒激光微构造光电二极管的响应随微构造硅光电二极管的尖峰高度和退火温度的不同而不同。尖峰高度为3~4 m的样品在973 K温度退火30 min后,响应度可达0.55 A/W。即使在1100 nm波长处,这种新型的硅光电二极管的响应仍可高达0.4 A/W。 相似文献
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理论研究分子结构与双光子吸收性质之间的关系对于指导实验者设计与合成功能分子材料具有重要意义. 在杂化密度泛函水平上, 利用响应函数方法, 计算了一类以二乙烯硫/砜基为中心的新型电荷转移分子的双光子吸收截面, 并在相同计算水平上, 与联苯乙烯类强双光子吸收分子做了比较; 以新型电荷转移分子为基础, 利用异构效应, 设计出了可以增强双光子吸收强度的分子结构. 研究表明, 在可应用波长范围内, 该系列分子表现出较强的双光子吸收响应, 与相似共轭长度的强双光子吸收分子具有相同量级的双光子吸收截面; 二乙烯硫/砜基在分子中心作为吸电子基团可以形成有效的电荷转移分子; 改变咔唑基的连接方式可以有效提高双光子吸收截面. 该研究为实验合成新型双光子吸收分子材料提供了理论依据. 相似文献
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DeGui Kong GuangHong Ao YaChen Gao Qing Chang WenZhi Wu LingLing Ran Hong'An Ye 《Physica B: Condensed Matter》2012,407(21):4251-4253
Using the Z-scan technique and pump–probe technique with 130 fs laser pulses at 800 nm, we verify that an intraband one-photon absorption follows the interband two photon absorption. Particularly, we find that there is an intraband relaxation interspersed between these two absorption processes for some of the conduction band electrons but not all of them. In this study, we measure the interband two photon absorption coefficient and the absorptive cross sections associated with both excitation pathways within the conduction band. In addition, we estimate the time for relaxation of electrons within the conduction band to be 250 fs. 相似文献
13.
Yuanxin Li Ningning Dong Saifeng Zhang Xiaoyan Zhang Yanyan Feng Kangpeng Wang Long Zhang Jun Wang 《Laser \u0026amp; Photonics Reviews》2015,9(4):427-434
Strong two‐photon absorption (TPA) in monolayer MoS2 is demonstrated in contrast to saturable absorption (SA) in multilayer MoS2 under the excitation of femtosecond laser pulses in the near‐infrared region. MoS2 in the forms of monolayer single crystal and multilayer triangular islands are grown on either quartz or SiO2/Si by employing the seeding method through chemical vapor deposition. The nonlinear transmission measurements reveal that monolayer MoS2 possesses a nonsaturation TPA coefficient as high as ∼(7.62 ±0.15) ×103 cm/GW, larger than that of conventional semiconductors by a factor of 103. As a result of TPA, two‐photon pumped frequency upconverted luminescence is observed directly in the monolayer MoS2. For the multilayer MoS2, the SA response is demonstrated with the ratio of the excited‐state absorption cross section to ground‐state cross section of ∼0.18. In addition, the laser damage threshold of the monolayer MoS2 is ∼97 GW/cm2, larger than that of the multilayer MoS2 of ∼78 GW/cm2.
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Absorption spectra of formaldehyde molecule in the gas phase have been recorded using photoacoustic (PA) technique with pulsed
dye laser at various power levels. The spectral profiles at higher power levels are found to be different from that obtained
at lower laser powers. Two photon absorption (TPA) is found to be responsible for the photoacoustic signal at higher laser
power while the absorption at lower laser power level is attributed to one photon absorption (OPA) process. Probable assignments
for the different transitions are given in this paper. 相似文献
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Aleksander Rebane Mikhail A. Drobizhev Erich Beuerman Jüri Pahapill 《Journal of luminescence》2010,130(6):1055-4262
We present a new approach to modeling of homogeneous line shape in two-photon absorption (2PA) spectra of chromophores with large permanent dipole moment difference between the ground- and excited electronic states using numerical solution of stochastic two-level density matrix equation of motion. Good agreement with experimental 2PA line shapes is obtained for S1←S0 transition of Styryl 9 M, which allows us to estimate that the permanent dipole moment difference varies in this chromophore within the S1←S0 band in the range, Δμ=12-25 D. 相似文献
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研究了非线性双光子Jaynes-Cummings(J-C)模型系统中原子偶极矩高阶压缩的时间演化特性及其产生条件。结果表明,在弱场条件下,原子偶极矩色散或吸收分量的二阶和六阶量子涨落可被周期性压缩,非线性修正项或失谐量以及热噪声对压缩程度有显著的影响。 相似文献
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Third order nonlinear optical properties of amorphous Znx–Sy–Se100−x−y chalcogenide films have been investigated using single beam transmission z-scan technique at 1064 nm of Nd:YAG laser. Measurement of optical properties of amorphous Znx–Sy–Se100−x−y chalcogenide films prepared by thermal evaporation technique has been made. X-ray diffraction patterns of chalcogenide films confirm the amorphous nature. Optical band gap (Eg) has been estimated using Tauc's plot method from transmission spectra that is found to decrease with increase in content due to valence band broadening and band tailing the system. Nonlinear refractive index (n2), nonlinear absorption coefficient (β) and third order nonlinear susceptibility (χ3) of chalcogenide films have been estimated. Self-focusing effect has been observed in closed aperture and reverse saturable absorption in open aperture scheme. Limiting threshold and dynamic range have been calculated from optical limiting studies. The increase in nonlinearity with increase in Zn content has been observed that is understood to be due to decrease in band gap on Zn doping. High nonlinearity makes these films a potential candidate for waveguides, fibers and two photon absorption in optical limiters. 相似文献
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Three hydrazones, 2-(4-methylphenoxy)-N′-[(1E)-(4-nitrophenyl)methylene]acetohydrazide (compound-1), 2-(4-methylphenoxy)-N′-[(1E)-(4-methylphenyl)methylene]acetohydrazide ((compound-2) and N′-{(1E)-[4-(dimethylamino)phenyl]methylene}-2-(4-ethylphenoxy) acetohydrazide(compound-3) were synthesized and their third order nonlinear optical properties were investigated using a single beam z-scan technique with nanosecond laser pulses at 532 nm. Open aperture data obtained from the three compounds indicates two photon absorption at this wavelength. The nonlinear refractive index n2, the nonlinear absorption coefficient β, the magnitude of the effective third order susceptibility χ(3), the second order hyperpolarizability γh and the coupling factor ρ have been estimated. The values obtained are comparable with the values obtained for 4-methoxy chalcone derivatives and dibenzylidene acetone derivatives. Among the compounds studied, compounds-1 and 3 exhibited the better optical power limiting behaviour at 532 nm. Our studies suggest that compounds-1, 2 and 3 are potential candidates for optical device applications such as optical limiters and optical switches. 相似文献