全固体小型Yb∶YAG激光器热效应及输出特性研究

利用中红外相机及干涉测量技术研究了二极管泵浦小型Yb∶YAG激光增益介质在激光及非激光条件下的温度分布、温度梯度、热透镜效应,同时根据对热效应的研究,对激光器的参量进行了优化.研究了在不同掺杂浓度下激光器的输出特性.对于2.3at.%掺杂浓度,得到激光输出功率为1.7 W,斜效率26.2%,光-光转换效率为13.5%的实验结果;对于5.0at.% 掺杂浓度,得到激光输出功率为2.5 W,斜效率51%,光-光转换效率为24%的实验结果.     

LD双端端面泵浦的高功率连续单频Nd:YVO4激光器

通过研究Nd:YVO4晶体在不同Nd3+掺杂浓度下对泵浦激光的吸收特性,以及激光晶体因吸收泵浦光而产生的热效应,在理论上分析了大功率泵浦情况下全固体化单频Nd:YVO4激光器中激光晶体Nd3+掺杂浓度对激光输出特性的影响,得出了激光器的输出功率、泵浦阈值以及斜效率与晶体掺杂浓度的对应关系.在实验上对晶体掺杂浓度分别为0.2 at%、0.3 at%和0.5 at%的大功率全固体化单频Nd:YVO4激光器的输出功率进行了比较,实验结果和理论预测基本吻合.当Nd:YVO4晶体的Nd3+掺杂浓度为0.3 at%,在44.3 W泵浦光功率下,我们在实验室得到18 W单频连续1.064 μm激光输出,激光器的斜效率为49.4%.     

28.2 W波长锁定878.6 nm激光二极管共振抽运双晶体1064 nm激光器

报道了一种由波长锁定878.6 nm半导体激光器共振抽运两块不同掺杂浓度Nd:YVO4晶体串接的1064nm激光器,并与使用单块的低掺杂浓度晶体和高掺杂浓度晶体情况进行比较,实验表明利用波长锁定878.6nm半导体激光器共振抽运双晶体串接的方式,有利于降低晶体的热效应,提高光光转换效率.当抽运功率为40 W时,获得了28.2 W的1064 nm激光输出,光光转换率为70.5%,斜率效率为70.6%,相对吸收光的光光转换率76%,斜率效率为76.4%,同时该激光器在10?C—40?C的温度变化范围内具有极好的温度稳定性.     

大功率激光二极管抽运Nd∶YVO4激光器的特性研究

通过对Nd∶YVO4晶体吸收特性的研究, 对激光输出功率、斜效率与抽运功率的关系进行了理论分析, 发现Nd∶YVO4激光器在大功率激光二极管抽运的条件下, 激光斜效率随抽运功率的增加而减小, 实验表明, 理论结果与实验符合得较好. 选用Nd3+掺杂的原子数分数为0.5%、通光长度为5 mm的Nd∶YVO4晶体, 在抽运功率为5 W左右时, 输出功率为3 W左右时, 获得了71.5%的激光斜效率.     

激光二极管抽运的Nd:YVO_4连续自拉曼1175nm激光器

报道了采用激光二极管端面抽运的Nd:YVO4晶体连续自拉曼激光器的实验研究.通过对晶体掺杂浓度及晶体结构的选择优化,减轻自拉曼晶体的热效应,实现了结构紧凑的1175 nm连续自拉曼激光器的高效运转.最终以两端键合的复合Nd:YVO4晶体作为自拉曼介质,在25.5 W的抽运功率下,获得了最高3.4 W的1175 nm连续拉曼光输出,光光转换效率为13.3%,拉曼阈值低至2.21 W,斜效率为14.6%.     

LD抽运Nd:LuVO4微片激光器性能研究

报道了一类新型的LD端面抽运Nd:LuVO4微片激光器,讨论了在不同掺杂浓度,不同厚度和不同透过率下的激光性质,测定了在不同抽运功率下,微片最佳激光输出功率与LD抽运温度的关系.在2W抽运功率下获得923mW的1064nm激光输出,阈值为48mW,斜效率为52%.对微片制冷后斜效率提高到59%.     

低温GaAs被动调Q锁模Nd∶Gd_(0.42)Y_(0.58)VO_4混晶激光器特性研究

采用低温生长GaAs晶体作为被动饱和吸收体兼输出镜,实现了Nd∶Gd0.42Y0.58VO4混晶激光器的调Q锁模运转。研究了Nd∶Gd0.42Y0.58VO4激光器的基频运转特性。在输出镜透射率T=10%、腔长L=40 mm的情况下,当抽运功率为8.6 W时,获得激光输出功率3.78 W,光光转换效率为43.9%。并测量了Nd∶Gd0.42Y0.58VO4混晶被动调Q激光器的输出特性。实验结果表明激光器调Q运转阈值为2 W,当抽运功率为3.7 W时,激光器出现调Q锁模行为;当抽运功率为8.6 W时,激光器调Q锁模深度达70%以上,对应的脉冲包络重复频率为670 kHz,半峰全宽为180 ns,平均输出功率为1.35 W,光光转换效率为15.7%。     

激光二极管端面抽运Nd:YVO4板条激光器及其热效应

激光器中激光介质采用板条状几何结构可以极大地降低它的热效应,但仍然需要进一步分析其影响,进而优化激光器效率.利用有限元分析方法分析了部分端面抽运的混合腔板条激光器中激光介质的热效应,计算的热透镜焦距与实测结果基本相符.分析了热效应对模式匹配的影响,分析结果对于优化激光器效率、改进谐振腔设计具有一定的参考价值.并在分析的基础上进行了混合腔实验,抽运功率为110 W时,获得连续输出激光功率41.5 W,光光转换效率约38%,斜效率达58.8%,M2因子为非稳腔方向M2x＝1.59,稳定腔方向M2y＝1.55.     

国产掺Nd3+透明薄片陶瓷的光学性能研究

研究了国产透明陶瓷Nd∶YAG和Nd∶YSAG的光学和激光性能.介绍了透明陶瓷Nd∶YAG和Nd∶YSAG的制作方法及其光谱性能,报道了相应的激光实验结果.对于Nd∶YAG薄片激光器,得到了中心波长1 064.2 nm,半高全宽为0.89 nm的激光输出,泵浦阈值功率0.267 W,最大激光输出功率0.319 W.对于Nd∶YSAG薄片激光器,由于荧光寿命比较长,可实现高掺杂,输出激光的中心波长为1 063.8 nm,半高全宽为1.6 nm,最大激光输出功率为0.356 W,斜率效率达23.2％,结果证明国产Nd∶YSAG陶瓷适用于短脉冲薄片激光器.     

端面泵浦双Nd∶YVO_4激光器中热效应对腔稳定性的影响

利用多个激光晶体串接方式可以提高固体激光器的输出功率 发展双Nd∶YVO4 晶体激光器 ,将晶体的端面镀膜作为谐振腔的端面镜 ,构成了平行平面谐振腔 对平行平面谐振腔的等效腔进行了理论分析 ,结果表明激光晶体吸收泵浦光产生的热透镜效应对保持腔的稳定性起到了重要的作用 在国内首次进行了双端泵浦双Nd∶YVO4 激光器的实验研究 ,在抽运功率为 2 0 .74W时获得了 11W的 10 6 4nmTEM0 0 模激光输出 ,其光 光转化效率约为 5 3% 并且对于不同掺杂浓度下的实验结果进行了讨论     

Diode pumped active-mirror Yb:YAG ceramic lasers

Lasers from Yb:YAG ceramic at different temperature were reported in this paper. The Yb:YAG ceramic laser with active-mirror structure was end-pumped by a laser diode whose central wavelength was 940 nm. At 80 K, with doping concentration of 5 at % Yb:YAG ceramic slab, output energy of 0.68 J at 10 Hz repetition rate was obtained under the pump energy of 2.49 J, corresponding to a slope efficiency of 40% and a conversion efficiency of 27.3%, respectively.     

Highly efficient CW intracavity frequency-doubled Yb:YAG-LBO laser at 515 nm under 968 nm diode laser pumping

We describe the output performances of the 1030 nm transition in Yb:YAG under in-band pumping with diode laser at the 968 nm wavelength. An end-pumped Yb:YAG crystal yielded 1.93 W of continuous-wave (CW) output power for 9.1 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 23.6%. Furthermore, 205 mW 515 nm green light was acquired by frequency doubling, resulting in an optical-to-optical efficiency with respect to the absorbed pump power of 2.7%. Comparative results obtained for the pump with diode laser at 940 nm are given in order to prove the advantages of the in-band pumping.     

High-power polycrystalline Er:YAG ceramic laser at 1617 nm

We report on the efficient operation of a high-power erbium-doped polycrystalline Er:YAG ceramic laser at 1617 nm resonantly pumped by a high-power 1532 nm Er,Yb fiber laser. Lasing characteristics of Er:YAG ceramics with different Er3+ concentrations are evaluated and compared. With an output coupler of 15% transmission and 0.5 at. % Er3+-doped YAG ceramic as the gain media, the laser generates 14 W of output power at 1617 nm for 28.8 W of incident pump power at 1532 nm, corresponding to a slope efficiency with respect to incident pump power of 51.7%.     

Efficient tunable Yb:YAG ceramic laser

A high-power efficient ceramic Yb:YAG laser was demonstrated at a room temperature of 20 °C with an Yb concentration of 9.8 at.%, a gain medium of 1 mm, a pumping power of 13.8 W, an output coupler of T = 10%, and a cavity length of 20 mm. A 6.8 W cw output power was obtained with a slope efficiency of 72%. The ceramic Yb:YAG laser exhibited a continuous tunability in the spectral range of 63.5 nm from 1020.1 to 1083.6 nm for T = 1% at a maximum output power of 1.6 W. To the best of our knowledge, this is the first study of the tunability of ceramic Yb:YAG lasers, except crystal Yb:YAG studies.     

Yb:Y2O3透明陶瓷的光学性能研究

介绍了一种基于纳米粉末真空烧结技术的新型固体激光材料——Yb：Y₂O₃多晶陶瓷的制备工艺、物理化学特性、能级结构和光谱特性，并与Yb：YAG单晶进行了对比.采用紧凑型有源镜激光器(CAMIL)的抽运方式，验证了Yb：Y₂O₃透明陶瓷的激光输出性能.在35W的最大抽运功率下，得到波长1078 nm，功率10.5 W 的连续激光输出，斜率效率达到37.5%.实验中还观察到激光输出波长随抽运功率增加而红移以及随输出耦合镜变化而漂移的现象.Yb：Y₂O₃多晶陶瓷是一种理想的激光材料，不仅具有与Yb：YAG单晶同样优秀的物理化学性能和光谱特性，而且其热导率和发射带宽约为Yb：YAG单晶的两倍，非常适合于高亮度激光器和超短脉冲激光器领域的发展应用. 关键词： 2O₃陶瓷')" href="#">Yb:Y₂O₃陶瓷 陶瓷激光器 透明陶瓷     

角抽运Yb:YAG激光器

报道了一种高功率准三能级激光器角抽运方法，抽运光从板条激光器结构中的板条工作介质的角注入，综合考虑抽运吸收、抽运亮度、晶体的掺杂浓度以及晶体尺寸等因素，进行了角抽运复合Yb:YAG激光器设计，实验上获得了最大连续输出功率400W, 斜效率28%的输出，实验结果充分证明了角抽运原理的正确性和应用于高功率激光器方面的可行性. 关键词： Yb:YAG 角抽运 复合晶体     

Scalable concept for diode-pumped high-power solid-state lasers

A new, scalable concept for diode-pumped high-power solid-state lasers is presented. The basic idea of our approach is a very thin laser crystal disc with one face mounted on a heat sink. This allows very high pump power densities without high temperature rises within the crystal. Together with a flat-top pump-beam profile this geometry leads to an almost homogeneous and one-dimensional heat flux perpendicular to the surface. This design dramatically reduces thermal distortions compared to conventional cooling schemes and is particularly suited for quasi-three-level systems which need high pump power densities. Starting from the results obtained with a Ti:Sapphire-pumped Yb:YAG laser at various temperatures, the design was proved by operating a diode-pumped Yb:YAG laser with an output power of 4.4 W and a maximum slope efficiency of 68%. From these first results we predict an exctracted cw power of 100 W at 300 K (140 W at 200 K) with high beam quality from a single longitudinally pumped Yb: YAG crystal with an active volume of 2 mm³. Compact diode-pumped solid-state lasers in the kilowatt range seem to be possible by increasing the pump-beam diameter and/or by using several crystal discs.     

Effect of ytterbium concentration on cw Yb:YAG microchip laser performance at ambient temperature – Part II: Theoretical modeling

A theoretical model based on a quasi-four-level system is modified to investigate the effect of Yb concentration on performance of continuous-wave Yb:YAG microchip lasers by taking into account temperature-dependent thermal population distribution, temperature-dependent emission cross-section and concentration-dependent fluorescence lifetime, thermal loading, thermal conductivity, and thermal expansion coefficient. The local temperature rise in Yb:YAG crystal caused by the absorbed pump power plays an important role in the laser performance of Yb:YAG microchip lasers working at ambient temperature without actively cooling the sample. The output wavelengths dependent on output coupling, Yb concentration, and pump power level were analyzed quantitatively. The numerical simulation of Yb:YAG microchip lasers is in good agreement with experimental data. The optimized laser operation for Yb:YAG microchip lasers is proposed by varying the thickness and output coupling for different Yb concentrations. The effect of thermal lens, thermal deformation effect, and saturated inversion population distribution inside the Yb:YAG crystal on performance of heavy-doped Yb:YAG microchip lasers are also addressed. PACS 42.55.Xi; 42.70.Hj; 42.55.Rz     

Effect of ytterbium concentration on cw Yb:YAG microchip laser performance at ambient temperature – Part I: Experiments

The microchip laser performance of Yb:YAG crystals doped with different ytterbium concentrations (C_Yb=10, 15, and 20 at. %) has been investigated at ambient temperature without active cooling of the gain media. Efficient laser oscillation for a 1-mm-thick YAG doped with 10 at. % Yb³⁺ ions was achieved at 1030 and 1049 nm with slope efficiencies of 85% and 81%, correspondingly. The laser performance of heavy-doped Yb:YAG crystals was limited by the thermal population at terminated lasing level and thermal lens effect at room temperature without sufficient cooling of the samples. The laser emitting spectra of Yb:YAG microchip lasers with different Yb concentrations and output couplings are addressed with the local temperature rise, due to the absorption of the pump power inside the gain media under different pump levels. PACS 42.55.Xi; 42.70.Hj; 42.55.Rz     

Efficient passively Q-switched laser operation of Yb in the disordered NaGd(WO4)2 crystal host

Efficient passively Q-switched laser operation of the disordered Yb:NaGd(WO(4))(2) crystal is demonstrated for the first time to our knowledge with a Cr(4+):YAG saturable absorber by diode end pumping. 2.05 W of average output power at a pulse repetition frequency of 13.3 kHz was obtained at an absorbed pump power of 7.7 W, with a slope efficiency of 40%. The energy and duration of the generated laser pulse were 154 microJ and 33 ns, respectively, corresponding to a peak power of 4.67 kW. In continuous-wave operation, the Yb:NaGd(WO(4))(2) laser yielded an output power of 5.5 W with an optical-optical efficiency of 51%.