基于版图优化的综合灵敏度模型

随着集成电路规模的不断扩大和器件特征尺寸的不断缩减,保持和改善集成电路的制造成品率成为优化电路设计和制造工艺研究的热点.为了减少由冗余物缺陷和丢失物缺陷所引起的成品率损失,选择优先优化的线网成为版图优化过程中的一个重要课题.基于关键面积减小的版图优化是提高集成电路成品率的一种有效途径.本文提出了一种新的短路、开路灵敏度模型,该模型以线网为单位,反映了单位线网上该线网与周围线网间的短路关键面积和自身开路关键面积的大小.由于本文的灵敏度模型是关于单一线网的,同时又包含候选线网周围线网的信息,因此,在优化时可以同时减少候选线网与周围线网之间的短路关键面积以及线网本身的开路关键面积,提高了版图优化的效率.实验结果表明,该灵敏度模型可作为版图优化中线网位置选择的依据.     

考虑非均匀温度分布效应的缓冲器插入最优尺寸研究

基于非均匀温度分布效应对互连延时的影响, 提出了一种求解互连非均匀温度分布情况下的缓冲器最优尺寸的模型. 给出了非均匀温度分布情况下的RC互连延时解析表达式, 通过引入温度效应消除因子, 得出了最优插入缓冲器尺寸以使互连总延时最优. 针对90 nm和65 nm工艺节点, 对所提模型进行了仿真验证, 结果显示, 相较于以往同类模型, 本文所提模型由于考虑了互连非均匀温度分布效应, 更加准确有效, 且在保证互连延时最优的情况下有效地提高了芯片面积的利用.     

考虑自热效应的互连线功耗优化模型

基于互连线的分布式功耗模型,考虑自热效应的同时采用非均匀互连线结构,提出了一种基于延时、带宽、面积、最小线宽和最小线间距约束的互连动态功耗优化模型.分别在90和65 nm互补金属氧化物半导体工艺节点下验证了功耗优化模型的有效性,在工艺约束下同时不牺牲延时、带宽和面积所提模型能够降低高达35％互连线功耗.该模型适用于片上网络构架中大型互连路由结构和时钟网络优化设计.     

边缘形貌缺陷对条状光学天线响应特性的影响

使用有限时域差分法,模拟计算了天线边缘的凹凸缺陷对硅基底上的条形天线的响应特性及电场分布的影响.计算结果表明:两种类型的缺陷都将改变缺陷附近的电场方向和电场强度,凸起缺陷可以使其附近的电场增强,而凹陷缺陷则相反,且缺陷越靠近天线末端,对电场的影响越强.缺陷大小和位置不同,对电场增强面积的影响不同.凹陷缺陷位于天线末端时,随着缺陷的增大,电场强度增强2倍的区域单调减小,增强4倍的区域面积单调增加.当缺陷为20nm时,电场强度增强2倍的区域面积降低约3%,增强4倍的区域面积增加约4%.与凹陷缺陷不同凸起缺陷没有简单单调性,缺陷位置不同,影响也有所区别,但是控制缺陷在10nm以内可以显著降低影响.该结果为光学天线加工的精度要求提供了理论依据.     

面向纳米电路的改进型卷积核可制造性模型建模研究

囿于材料和工艺稳定性等原因, 纳米级集成电路制造依然基于193 nm激发光的工艺, 光刻波长远大于版图尺寸, 使得制造中光的干涉和衍射现象极大降低了分辨率, 影响了芯片质量, 因此版图在制造前需要使用可制造性模型进行查错. 传统模型对制造过程进行物理建模, 通过对模型中的矩阵进行分解得到卷积核, 所使用的物理模型不仅复杂, 而且应用难度高, 加之还有物理模型缺失的情况, 因此难以描述具有上千参数的生产线. 本文使用卷积的形式作为可制造性模型的框架, 通过优化算法提取版图到硅片轮廓这一过程的信息并以卷积核的形式体现出来, 卷积核中的每一个元素均为根据已知的生产线输入输出数据优化得出, 是描述制造过程的一个维度. 该模型克服了传统模型需要工艺参数等机密信息的缺陷, 同时具有更强的描述制造过程的能力; 模型甚至可以包含版图校正信息, 描述从版图到硅片轮廓这一全流程. 该模型在65 nm工艺下的实验结果表明该模型具有8 nm的精度.     

一种基于延时和带宽约束的纳米级互连线优化模型

基于RLC互连线延时模型,通过缓冲器插入和改变互连线宽及线间距,提出了一种基于延时和带宽约束的互连功耗-缓冲器面积的乘积优化模型.基于90 nm,65 nm和45 nm CMOS工艺验证了互连线优化模型,在牺牲1/3和1/2的带宽的前提下,平均能够节省46%和61%的互连功耗,以及65%和83%的缓冲器面积,能应用于纳米级SOC的计算机辅助设计. 关键词： 纳米互连功耗 缓冲器面积 延时 带宽     

含Stone-Wales缺陷zigzag型石墨烯纳米带的电学和光学性能研究

本文采用基于密度泛函理论的第一性原理对zigzag型石墨烯纳米带中含有不同Stone-Wales缺陷的电子结构特性和光学性能进行研究. 考虑了两种模型:不计电子自旋和考虑电子自旋的情况.研究发现:不计电子自旋情况下,含对称Stone-Wales缺陷的石墨烯纳米带在缺陷区域出现了凹凸不平的折皱构型,两种不同的Stone-Wales缺陷都引起了电荷的重新分布.考虑电子自旋时,Stone-Wales缺陷的引入对石墨烯纳米带自旋密度有显著影响,也引起了不同自旋的电子态密度的变化.进一步研究了纳米带的光学性能,发现 关键词： 石墨烯纳米带 Stone-Wales缺陷 电子结构 光学性能     

考虑互连温度分布的缓冲器插入延时优化方法

针对VLSI设计中存在的互连电感效应、热电耦合以及互连温度分布的问题,提出一种缓冲器插入延时优化方法.首先根据互连温度分布的特点得出其电阻模型和延时模型,通过延时、功耗和温度之间的热电耦合效应求得考虑互连温度分布的缓冲器插入最优化延时,利用Matlab软件求得最佳优化结果.采用该方法针对45 nm工艺节点的缓冲器插入进行分析和验证,证实了方法的有效性.研究表明,忽略互连电感效应会高估芯片的优化延时,忽略互连温度分布会低估芯片的优化延时,在全局互连尺寸较小(线宽为245 nm)时,忽略互连温度分布会低估互连延时8.71%.     

Ge纳米结构的形貌与铁磁性研究

利用等离子体增强化学气相沉积技术制备了厚度不同的Ge薄膜, 随着样品厚度的减小, 样品表现出了室温铁磁性. 厚度为12 nm样品经过300 ℃退火后, 由于颗粒细化, 颗粒之间的界面增加, 界面缺陷增加, 样品表现出最大的铁磁性 (50 emu/cm³). 场冷却和零场冷却曲线测试表明居里温度约为350 K. 进行600 ℃退火后, 颗粒团聚, 样品的铁磁性最小. 当样品厚度进一步减小为6 nm时, 沉积态样品表现出铁磁性和顺磁性共存. 对6 nm厚的样品进行300 ℃退火后, 样品只具有铁磁性. 进行600 ℃退火后, 样品却只具有顺磁性. 12 nm 和6 nm 厚的Ge纳米结构薄膜随退火温度变化表现出不同的磁性规律, 我们认为是由于样品的颗粒大小和颗粒分布不同造成的. 样品越薄, Si基底与Ge薄膜之间的界面缺陷越明显, 界面缺陷以及Ge颗粒之间的界面缺陷为样品提供了未配对电子, 未配对电子的铁磁性耦合强度与样品颗粒的分布以及颗粒之间的结合有一定的关系. 颗粒之间分散或颗粒之间的融合程度大都将会降低样品的铁磁性.     

高功率激光系统中随机分布缺陷产生的"热像"

基于"热像"的衍射理论模型,并利用空间频谱的传输矩阵,理论分析了位置和尺寸均随机分布的缺陷在高功率激光系统中产生"热像"的机理,作为理论分析结果的对比验证,数值模拟了高功率激光束受到这种随机分布缺陷调制后所形成"热像"的演化规律,进而从统计平均的角度讨论了"热像"强度的变化趋势与缺陷分布数目和尺寸范围之间的关系. 结果表明,当缺陷的尺寸接近某个特定值时,受其调制的光束会形成强度最大的"热像"点,且"热像"所在平面强度极大值点的横向位置与光学元件表面的缺陷横向分布相对应;在一定范围内,"热像"的强度最大值随 关键词： 热像 随机分布缺陷 高功率激光 非线性介质     

Area Distribution for Directed Random Walks

We study the probability distribution for the area under a directed random walk in the plane. The walk can serve as a simple model for avalanches based on the idea that the front of an avalanche can be described by a random walk and the size is given by the area enclosed. This model captures some of the qualitative features of earthquakes, avalanches, and other self-organized critical phenomena in one dimension. By finding nonlinear functional relations for the generating functions we calculate directly the exponent in the size distribution law and find it to be 4/3.     

Critical area computation for real defects and arbitrary conductor shapes

In current critical area models, it is generally assumed the defect outlines are circular and the conductors to be rectangle or the merger of rectangles. However, real defects and conductors associated with optimal layout design exhibit a great variety of shapes. Based on mathematical morphology, a new critical area model is presented, which can be used to estimate the critical area of short circuit, open circuit and pinhole. Based on the new model, the efficient validity check algorithms are explored to extract critical areas of short circuit, open circuit and pinhole from layouts. The results of experiment on an approximate layout of ${4\times 4}$ shifts register show that the new model predicts the critical areas accurately. These results suggest that the proposed model and algorithm could provide new approaches for yield prediction.     

Yield estimation of metallic layers in integrated circuits

In the existing models of estimating the yield and critical area, the defect outline is usually assumed to be circular, but the observed real defect outlines are irregular in shape. In this paper, estimation of the yield and critical area is made using the Monte Carlo technique and the relationship between the errors of yield estimated by circular defect and the rectangle degree of the defect is analysed. The rectangular model of a real defect is presented, and the yield model is provided correspondingly. The models take into account an outline similar to that of an original defect, the characteristics of two-dimensional distribution of defects, the feature of a layout routing, and the character of yield estimation. In order to make the models practicable, the critical area computations related to rectangular defect and regular (vertical or horizontal) routing are discussed. The critical areas associated with rectangular defect and non-regular routing are developed also, based on the mathematical morphology. The experimental results show that the new yield model may predict the yield caused by real defects more accurately than the circular model. It is significant that the yield is accurately estimated using the proposed model for IC metals.     

Ray Modes in Random Gap Systems

A disordered photonic crystal with spectral degeneracies in the form of Dirac nodes is considered. Disorder can create a random gap at the Dirac nodes, which leads to the formation of random edge modes. We study the distribution of these edge modes and find from symmetry considerations that the discrete anisotropy of the photonic crystal is spontaneously broken for the propagation of photons from a local photon source. This effect can be understood as the spontaneous creation of a ray mode or as the creation of a one‐dimensional waveguide in a two‐dimensional photonic crystal through strong random scattering. The phenomenon must be distinguished from Anderson localization of photons in a single band crystal and can be considered as angular localization, since it creates geometric states rather than confining the photons to an area of the size of the localization length. The propagation of the photon intensity is described by a Fokker‐Planck equation, whose drift term is determined by the spectrum of the photonic crystal near the Dirac node.     

非完整超晶格中电子透射问题的计算机模拟

采用转移矩阵方法,模拟研究了垒高无序和阱宽无序非完整超晶格的电子态问题.计算了垒高无序有限超晶格的透射谱和其局域态波函数以及阱宽无序有限超晶格的透射谱和本征值,直观地给出了垒高无序和阱宽无序非完整有限超晶格其电子态行为的物理图像.模拟结果表明:垒高无序和阱宽无序这两种常见非完整一维有限超晶格的子带带隙间均存在强烈的电子运动定域化,且电子波的布喇格散射对周期性势场更敏感;这两种非完整性引起的局域,通过计算电子局域态波函数和有限系统的本征值得到了证实;对本文讨论的这种类型和周期的超晶格,如果控制阱宽在9.1～10.9nm间随机变化,即阱宽的值最大相差1.8岫时,计算机模拟的结果是,阱宽的这种非周期性开始使子带的带隙消失.     

Random lasing in dye-doped polymer dispersed liquid crystal film

A dye-doped polymer-dispersed liquid crystal film was designed and fabricated,and random lasing action was studied.A mixture of laser dye,nematic liquid crystal,chiral dopant,and PVA was used to prepare the dye-doped polymer-dispersed liquid crystal film by means of microcapsules.Scanning electron microscopy analysis showed that most liquid crystal droplets in the polymer matrix ranged from 30 μm to 40 μm,the size of the liquid crystal droplets was small.Under frequency doubled 532 nm Nd:YAG laser-pumped optical excitation,a plurality of discrete and sharp random laser radiation peaks could be measured in the range of 575–590 nm.The line-width of the lasing peak was 0.2 nm and the threshold of the random lasing was 9 m J.Under heating,the emission peaks of random lasing disappeared.By detecting the emission light spot energy distribution,the mechanism of radiation was found to be random lasing.The random lasing radiation mechanism was then analyzed and discussed.Experimental results indicated that the size of the liquid crystal droplets is the decisive factor that influences the lasing mechanism.The surface anchor role can be ignored when the size of the liquid crystal droplets in the polymer matrix is small,which is beneficial to form multiple scattering.The transmission path of photons is similar to that in a ring cavity,providing feedback to obtain random lasing output.     

A novel sensitivity model for short nets

For modern processes at deep sub-micron technology nodes, yield design, especially the design at the layout stage is an important way to deal with the problem of manufacturability and yield. In order to reduce the yield loss caused by redundancy material defects, the choice of nets to be optimized at first is an important step in the process of layout optimization. This paper provides a new sensitivity model for a short net, which is net-based and reflects the size of the critical area between a single net and the nets around it. Since this model is based on a single net and includes the information of the surrounding nets, the critical area between the single net and surrounding nets can be reduced at the same time. In this way, the efficiency of layout optimization becomes higher. According to experimental observations, this sensitivity model can be used to choose the position for optimization. Compared with the chip-area-based and basic- layout-based sensitivity models, our sensitivity model not only has higher efficiency, but also confirms that choosing the net to be optimized at first improves the design.     

Characterization of Critical Values of Branching Random Walks on Weighted Graphs through Infinite-Type Branching Processes

We study the branching random walk on weighted graphs; site-breeding and edge-breeding branching random walks on graphs are seen as particular cases. Two kinds of survival can be identified: a weak survival (with positive probability there is at least one particle alive somewhere at any time) and a strong survival (with positive probability the colony survives by returning infinitely often to a fixed site). The behavior of the process depends on the value of a certain parameter which controls the birth rates; the threshold between survival and (almost sure) extinction is called critical value. We describe the strong critical value in terms of a geometrical parameter of the graph. We characterize the weak critical value and relate it to another geometrical parameter. We prove that, at the strong critical value, the process dies out locally almost surely; while, at the weak critical value, global survival and global extinction are both possible.     

On the Distribution of Surface Extrema in Several One- and Two-dimensional Random Landscapes

We study here a standard next-nearest-neighbor (NNN) model of ballistic growth on one-and two-dimensional substrates focusing our analysis on the probability distribution function P(M,L) of the number M of maximal points (i.e., local “peaks”) of growing surfaces. Our analysis is based on two central results: (i) the proof (presented here) of the fact that uniform one-dimensional ballistic growth process in the steady state can be mapped onto “rise-and-descent” sequences in the ensemble of random permutation matrices; and (ii) the fact, established in Ref. [G. Oshanin and R. Voituriez, J. Phys. A: Math. Gen. 37:6221 (2004)], that different characteristics of “rise-and-descent” patterns in random permutations can be interpreted in terms of a certain continuous-space Hammersley-type process. For one-dimensional system we compute P(M,L) exactly and also present explicit results for the correlation function characterizing the enveloping surface. For surfaces grown on 2d substrates, we pursue similar approach considering the ensemble of permutation matrices with long-ranged correlations. Determining exactly the first three cumulants of the corresponding distribution function, we define it in the scaling limit using an expansion in the Edgeworth series, and show that it converges to a Gaussian function as L → ∞.