铌酸锂晶体中的磁光折变效应研究

对于掺铁铌酸锂晶体中不同全息记录配置下的磁光折变效应做了比较系统的理论分析，给出了铌酸锂晶体所有的磁光生伏打非零张量元. 详细计算并给出了不同全息纪录配置下的所有体光生伏打、磁光生伏打电流的解析形式. 理论结果表明，由于磁光生伏打效应引起了光激发电流的变化，所以对于每种配置全息光栅的衍射效率都会受到外加磁场的影响；对于不同的全息记录配置，磁场对铌酸锂晶体光折变非线性性质的影响也不同.讨论了一种确定特定张量元的方法. 关键词： 磁光生伏打 磁光折变效应 光生伏打     

短脉冲光在光伏光折变晶体中写入和擦除光折变光栅理论研究

利用GC Valley的准连续光(Quasi-cw)近似模型,研究了短脉冲激光(纳秒ns量级)在光伏光折变材料LiNbO3晶体中写入和擦除光折变光栅的过程,给出了空间电荷场随时间变化的表达式.理论研究表明,空间电荷场的形成和擦除与两个时间参量有关,在考虑或者不考虑光生伏打效应两种情况下,这两个参量随擦除光强的变化有基本相同的变化规律,光栅的写入和擦除有相同的结果.同样,擦除一个光栅所需的光能量在两种情况下也有相同的结果.因此,在短脉冲光入射光折变晶体材料情况下,考虑光生伏打效应与不考虑光伏效应,对短脉冲光在光折变LiNbO3晶体中写入和擦除光栅基本没有影响.     

(2+1)维光折变波导阵列的制作

对四个点光源进行光学傅里叶变换,在自散焦光折变晶体中成功地制作了6μm×6μm间隔的并行(2+1)维阵列波导300余条,并证明了阵列波导实质上是二维体相位栅.实验研究了点光源间距、点光源尺寸及写入时间对阵列波导制作的影响,并分析了在自散焦光生伏打光折变介质中形成阵列波导的原理.     

在LiNbO3∶Fe晶体中写入与存储圆形和环形波导

在光生伏打、自散焦光折变介质LiNbO₃∶Fe晶体中写入并存储了圆形与环形波导，并观察到了环形波导之间的相互作用.这种写入波导的方法和技术具有良好的应用前景. 关键词：     

光折变光放大器

光折变相干光放大与量子相干光放大不同，前者是基于光折变效应和光的干涉，衍射现象实现的一种光像放大，因此具有重要的应用价值。由于光折变晶体可在低光功率下产生显著的光变光放大器也会问世。讨论了光折变光放大器的工作原理，并指出它的可能潜在应用。     

c向切割LiNbO3∶Fe晶体中光折变光散射

提出了一个新的理论机理:c向切割LiNbO₃∶Fe晶体中光折变背向光散射是由光生伏特电流的不均匀性引起的,并经过理论计算,比较成功的解释了实验观察到的各种现象 关键词： 光折变 散射 光生伏特     

在局域响应的光折变晶体中的相干光放大

理论和实验表明，在由光生伏打电荷迁移为主的局域非线性响应的薄光折变晶体（LiNbO₃∶Fe）中实现弱信号光放大是可能的．光能流从抽运光向信号光不可逆转移的起因是两束入射光与背面反射光之间的四波作用形成互倾斜、彼此有一定空间相移的两组相位栅．当入射抽运光在非布喇格条件下读出由反射光和其衍射光所写入的新光栅时，弱信号便获得相干放大．对理论计算与实验结果进行了比较． 关键词：     

偏振控制的Ce:KNSBN类光纤光折变光开关

在Ce:KNSBN光折变类光纤晶体中,用不同偏振的读出光控制衍射光强的大小从而实现光折变光开关的开－关功能.实验结果表明e光读出时的光栅衍射效率是o光读出的310倍,而且衍射效率比不随写入光光强比的变化而变化.与块状晶体做了比较,并用理论进行了分析,在光折变类光纤中的衍射效率比是块状晶体的10倍,光折变类光纤晶体有着更好的光开关性能.     

光折变聚合物材料的研究进展

本综述了光折变聚合物材料的发展历史和现状。概括出了这种新型光折变材料的发展思路,并汇总了各种类型材料的光折变特性参数。     

主客体式光折变聚合物中空间明孤子的动态演化特性

研究了主客体式光折变聚合物中空间明孤子的动态演化特性,讨论了振幅微扰和宽度微扰对其传播特性的影响.结果表明,入射波为明孤子波时,能够在聚合物中稳定直线传播 在较小微扰情况下,孤子波经短距离传播后能够演化为明孤子波 当微扰比较大时,光波不能在聚合物中稳定传播,而是呈现周期性震荡现象 关键词： 光折变效应 光折变聚合物 空间孤子     

核磁共振碳谱研究:烷烃化学位移和(CSS)与分子路径指数矢量(VPM)

系统研究了核磁共振碳谱和化学位移规律及其定量构谱关系(QSSR).本文研究了一组十元素分子路径指数矢量VPM,并发现它与烷烃化学位移和CCS有良好线性相关性.采用多元线性回归进行准确估计与预测,结果优良.     

Reduced s-d model with antiferromagnetically coupled impurity spins

An antiferromagnetic equivalent-neighbour Heisenberg interaction H_i between impurity spins is added to the reduced s-d Hamiltonian H_r previously introduced by simplifying the Kondo s-d exchange Hamiltonian H_K. Asymptotic mean-field theory is developed for H_r + H_i, in the presence and absence of external magnetic field, and applied to (La_1−xCe_x)Al₂ alloys. Specific heat c_i(T) and zero-field susceptibility χ_i(0,T) curves for (La_1−xCe_x)Al₂ are depicted. The coupling constants of H_r + H_i and conduction bandwidth are adjusted so that T_c temperatures for x = 0.2, 0.1 are equal to the experimental values. c_i(T) exhibits a jump at T_c and is decreasing for T < T_c. χ_i(0,T) has a first order pole at T_c which corresponds to the maximum of experimental susceptibility and χ_i(0,0) > 0. These results improve those obtained earlier on the grounds of H_r theory.     

Interrelations of discrete Painlevé equations through limiting procedures

We study the discrete Painlevé equations associated to the affine Weyl group which can be obtained by the implementation of a special limits of -associated equations. This study is motivated by the existence of two -associated discrete both having a double ternary dependence in their coefficients and which have not been related before. We show here that two equations correspond to two different limits of a -associated discrete Painlevé equation. Applying the same limiting procedures to other -associated equations we obtained several -related equations most of which have not been previously derived.     

稠苯芳杂环及其烷基质子化学位移的计算

本文提出了予测稠苯芳杂环及其烷基链上质子化学位移的计算方法。 将稠苯芳杂环化合物用凯库勒式表示,计算式为为需考虑的苯环内的乙烯基效应。σ_mi,ci为各苯环的环流效应。σ_1,Hc为各芳杂环的屏蔽效应,对杂环上质子它就是该单独芳杂环上相应质子的δ值,对苯环上质子要将它分解为各结构因素的效应,即:σ_1,He=(1/2)^d-1δ_x=y(或σ_z)+σ_c-c·σ_m,H. σ_x-y与σ_z为杂原子或其基团的屏蔽效应,σ_c=c为存在于芳杂环中的乙烯基的效应,σ_m,Hc为芳杂环的环流效应,d为对不同质子所考虑的键数。有取代基时需考虑取代基的效应。计算环上烷基质子的公式为:δ=σ_p,CH3+ασ_c,CH3+βσ_t,CH3+σ_l,G σ_l,G为稠苯芳杂环基的某级效应。     

What can we learn from B→DsKπ, Bd→DsKπ and Bd→DsK decays?

We study the nonresonant three-body decays of B⁺→D^(*)−_sK⁺π⁺ and B_d→D_s^(*)−K⁰π⁺. We find that these decays can provide the information on the time-like form factors of D^(*)_sK. We also explicitly investigate B_d→D_s^(*)−K^*+ decays by discriminating the nonresonant contributions with the unknown D^(*)_s wave functions being fixed by the measured mode of B_d→D_s⁻K⁺.     

Structural phase transitions at clean and metal-covered Si(111) surfaces investigated by RHEED spot analysis

Structural phase transitions between various kinds of superlattice structures formed on a Si(111) surface have been investigated by spot analysis of reflection high-energy electron diffraction (RHEED). Reversible transitions induced by temperature changes and irreversible ones induced by metal depositions were observed. Detailed discussions on the dynamics of the phase transitions are made by quantitative analyses of integrated spot intensity and profile. For a phase transition of 7′7  1′1 structures on a clean Si(111) surface, a hysteresis with temperature difference of 5°C. between in heating and cooling processes was found in the spot intensity change, indicating a first-order transition. Hysteresis was hardly recognized, on the other hand, for transitions of Au-induced superstructures (5×2-Au or ×-Au)  1×1-Au. The spot profiles were found to be broadened during the transition of Si(111)-×-Au  1×1-Au, which was a signature of a continuous transition, while the profiles remained unchanged during the transitions of the 7×7  1×1 and 5×2-Au  1×1-Au phases. Structural conversions induced by In adsorption on the Si(111) surface kept at constant temperatures were also analyzed. The conversions at room temperature were totally dependent on the initial substrate surface structures; the 7×7 surface did not show any structural conversion with In adsorption, while the ×-In surface successively converted to a 2×2 and a × phase with coverage increase. The structural transitions at elevated temperatures were sensitively dependent on the temperatures. Sequences of transitions among the 7×7, 4×1, ×, 1×, and ×4 were quantitatively revealed as changes in RHEED spot intensity.     

Interband Stark effects in InxGa1−xAs/InyAl1−yAs coupled step quantum wells

The effects of an electric field on the interband transitions in In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum wells have been investigated both experimentally and theoretically. A In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum well sample consisted of the two sets of a 50 Å In_0.53Ga_0.47As shallow quantum well and a 50 Å In_0.65Ga_0.35As deep step quantum well bounded by two thick In_0.52Al_0.48As barriers separated by a 30 Å In_0.52Al_0.48As embedded potential barrier. The Stark shift of the interband transition energy in the In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum well is larger than that of the single quantum well, and the oscillator strength in the In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum well is larger than that in a coupled rectangular quantum well. These results indicate that In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum wells hold promise for potential applications in optoelectron devices, such as tunable lasers.     

ErP5O14非晶玻璃的红外量子剪裁

研究了Er_1.0P₅O₁₄铒非晶玻璃的红外量子剪裁现象. 从吸收谱和激发光谱的计算比较中肯定了Er_1.0P₅O₁₄非晶 玻璃的1537.0 nm红外荧光为多光子量子剪裁荧光. 从Er_1.0P₅O₁₄非晶玻璃的可见和红外荧光发射光谱中发现激发²H_11/2, ⁴G_11/2和⁴G_9/2能级所导致的⁴I_13/2→⁴I_15/2量子剪裁红外荧光很强;基于自发辐射速率、无辐射弛豫速率和能量传递速率等参数的计算,对其量子剪裁机理进行了分析.发现起源于基态的强下转换能量传递{²H_11/2→⁴I_9/2,⁴I_15/2→⁴I_13/2},{⁴G_11/2→⁴I_13/2, ⁴I_15/2→²H_11/2},{⁴G_9/2→⁴F_7/2,⁴I_15/2→⁴I_13/2}和{⁴G_9/2→⁴I_13/2, ⁴I_15/2→²H_11/2}是导致Er_1.0P₅O₁₄非晶玻璃具有强的三光子和四光子量子剪裁红外荧光的原因.研究结果对改善太阳能电池效率有一定意义.