Optical and scintillating properties of Ce:Li(Y,Lu)F4 single crystals

We have investigated the optical and scintillating properties of Lu co-doped Ce:LiYF₄ single crystals with various Lu content. In the transmittance and absorption spectra, the absorption peaks at 243 nm get systematically red shifted in contrast to the peaks at 197 and 200 nm which get blue shifted with the increase in Lu content. At the same time, emission peaks at 306 nm and 200 nm under 295 nm excitation also get red shifted. The decay time of Ce:Li(Y,Lu)F₄ crystals under 295 nm excitation is found to be faster than that of Ce:LiYF₄ and Ce:LiLuF₄ crystals. The alpha-peak positions in the pulse-height spectra and decay times of crystals under alpha-ray irradiation are found to vary with the Lu content.     

An anomalous emission excited near the absorption edge of pyrene crystals

Emission spectra and decay times of the fluorescence excited at the absorption edge region in pyrene crystals were measured. At liquid nitrogen temperature, the fluorescence under the excitation at 390 nm is considered as the excimer emission and its band peak shifts a little to the short wavelength in comparison with that of the excimer emission under the excitation at 360 nm. The emission decay times under the excitation at the 390 nm and 360 nm are about 155 ns and 180 ns, respectively, at liquid nitrogen temperature. The former decay time changes its value abruptly near 127 K. This abrupt change of the decay time may be due to the phase transition in pyrene crystals.     

5d–4f luminescence of Ce3+, Gd3+ and Lu3+ in LiCaAlF6

The emission and excitation spectra as well as decay kinetics of luminescence due to 5d–4f transitions in Ce³⁺, Gd³⁺ and Lu³⁺ ions doped into LiCaAlF₆ crystals have been analyzed with high spectral and time resolution using synchrotron radiation for excitation. The rich fine structure originating from electronic origins of transitions and their phonon replica has been well resolved and identified. Experimental data are compared with the spectra simulated in the framework of the semiphenomenological models of the crystal field and the crystal lattice dynamics.     

Fast luminescence processes in KI : In caused by excitation in the a absorption band

The temperature dependence of the decay time (τ) of the luminescence pulses from the 440 nm emission band as well as the rise time (τ_R) of luminescence pulses from the 575 nm emission band has been investigated for KI : In by pulsed light excitation in the A absorption band. From the agreement of τ and τ_R independent of the temperature it can be concluded that the X minimum on the ³T₁₄ adiabatic potential energy surface (APES) is mainly populated by a radiationless transition from the tetragonal T minimum of the same APES.Furthermore, a comparison of parameters for the impurity centre luminescence corresponding to the tetragonal emission band in KI : In and KI : Tl has been drawn.     

Modelling of decay kinetics of self-trapped exciton luminescence in CdWO4 under femtosecond laser excitation in absorption saturation conditions

The analytical expressions for the three-dimensional spatial distribution of excitons and luminescence decay kinetics of wide band-gap crystals were derived taking into account the saturation effect for absorption near the centre of the incident laser beam with Gaussian transversal profile. The model is verified for the excitonic emission of CdWO₄ crystals under excitation by ultra-short laser pulses in the region of weak excitonic absorption.     

Vacuum ultraviolet 5d14f9-4f10 emission of Ho3+ ions in alkaline-earth fluorides

Time-resolved emission and excitation spectra as well as emission decay kinetics of CaF₂, SrF₂, BaF₂ doped with HoF₃ were investigated. Intensive emission bands near 168 nm, having long decay time, are caused by the spin-forbidden transitions from the 5d¹4f⁹ high-spin states to the ground ⁵I₈ states of Ho³⁺ ions. Weak spin allowed 5d¹4f⁹(low-spin)-4f¹⁰ emission band at 158 nm was observed only in CaF₂–Ho crystals. Spin allowed and spin-forbidden excitation bands were observed near 166 and 155 nm, respectively, in all studied crystals. Fast component of spin-forbidden emissions due to multiphonon relaxation to low-lying 4f¹⁰ Ho³⁺ level also was observed for all crystals.     

Luminescence centers in phosphorus-doped Cd1−xMgxTe mixed crystals

The emission and excitation spectra of P-doped Cd_1?xMg_xTe (x ? 0.45) mixed crystals have been measured over the temperature range of 300 ～ 4.2 K to reinvestigate the photoluminescence process of two broad emission bands; the 690 nm band of the as- grown crystals and the 610 nm band of the annealed crystal. The excitation spectrum of each band has a characteristic peak at 550 nm near the absorption edge of this crystal. Together with the data of the decay characteristic and the halfwidth of each band, we discuss the difference in the recombination process when the crystal is excited under two different radiation at 365 and 570 nm (close to the 550 nm radiation). It is concluded that both emission bands arise from donor-acceptor pairs and a localized center or self- activated center; the associated pair is V_Cd-interstitial P in the as-grown and V_Te ? P_Te in the annealed crystal.     

γ射线辐照诱导Bi:α-BaB2O4单晶近红外宽带发光的研究

用提拉法技术生长出了掺Bi的α-BaB₂O₄单晶并经过γ射线辐照.测定了样品在室温下的吸收光谱、发射光谱及荧光衰减曲线.在808 nm波长光的激发下,经γ射线辐照后的α-BaB₂O₄单晶中发现了中心波长为1139 nm、半高宽为113 nm的近红外宽带发光现象.讨论了辐照条件和退火处理对Bi离子发光的影响.对于其发光机理进行了初步的探讨. 关键词： 近红外宽带发光 2O₄单晶')" href="#">α-BaB₂O₄单晶 辐照 退火处理     

温度梯度法生长的Ce: YAlOZr3高温闪烁晶体的光谱分析

采用温度梯度法生长了熔体掺杂Ce浓度为1at%的YAlO3晶体，对于其吸收光谱、荧光光谱和x射线激发发射谱进行了表征分析.根据吸收光谱提出了一个色心模型，从而成功的解释了为什么刚生长出的晶体为粉红色，而分别经氢气和空气在1400℃退火后均能变为无色的现象和退火以后吸收光谱发生的显著变化.温度梯度法生长的Ce:YAP在330nm处存在着一定程度的自吸收和自激发.光致激发发射谱的发射主峰在368nm，而x射线激发发射谱的主发射峰红移至391nm，这表明在x射线激发下，晶体对发射光的自吸收将会减少.另外在x射线 关键词： 温度梯度法 Ce: YAP 色心 光谱     

Tunneling recombination luminescence under excitation of PbWO4:Mo crystals in the defect-related absorption region

Time-resolved emission and excitation spectra and luminescence decay kinetics were studied at 150-300 K for the green emission of PbWO₄:Mo crystals. It was found that the slow (μs-ms) decay component observed under excitation in the defect-related absorption region (around 3.8-3.9 eV) arises from the G(II) emission which appears at the tunneling recombination of optically created electron and hole centers. The study of the emission decay kinetics at different temperatures and excitation intensities allowed concluding that both the monomolecular and the bimolecular tunneling recombination process can be stimulated in the mentioned energy range. The monomolecular process takes place in the isolated spatially correlated pairs of electron and hole centers produced without release of electrons into the conduction band. The bimolecular process takes place in the pairs of randomly distributed centers created at the trapping of free electrons from the conduction band. The formation of electron centers under irradiation in the defect-related absorption region was investigated by the electron spin resonance (ESR) and thermally stimulated luminescence (TSL) methods. The possibility of various photo-thermally stimulated defects creation processes, which take place with and without release of free electrons into the conduction band, was confirmed.     

The luminescence properties of MgUO4

The luminescence of MgUO₄ has been investigated. Emission and excitation spectra as well as the decay time and the quantum efficiency of the emission were measured at 4.2 K. The temperature dependence of the emission spectrum and the emission intensity was studied. The results show that in MgUO₄ the emission originates from uranate centres near defects. These centres act as optical traps. Even at 4.2 K about 90% of the excitation energy is lost non-radiatively by trapping at killer sites. These are most probably due to the presence of U⁵⁺ ions.     

Investigation on the improvement of red phosphorescence in CaTiO3:Pr3+ nanoparticles

Red phosphorescence in nanosized CaTiO₃:Pr³⁺ phosphors has been investigated by measuring the spectra of emission and excitation, as well as the charging and decay processes. The emission intensity and the persistent time have been improved. More energy traps have been observed in nanoparticles compared to the bulk powders. The integral emission intensity from the nanoparticles is remarkably greater than that from the bulk. A phosphorescence recombination mechanism through tunneling in nanoparticles is discussed.     

Excitation wavelength dependent pump–probe signatures of molecular crystals

The photodynamics of single crystals of 4-(diisopropylamino)benzonitrile (DIABN) have been studied by femtosecond UV/Vis and mid-IR absorption spectroscopy. The observed spectroscopic response, especially in the UV/Vis, strongly depends on the optical excitation conditions. For the excitation light in resonance with the absorption of DIABN, broad and structureless transient spectra are observed, which decay non-exponentially within pico- to nanoseconds. For off-resonance excitation in the very red wing of the absorption band a stimulated emission signal is detected, which decays in ∼10 ps matching the known behavior of the non-interacting chromophore in solution. The 10 ps decay is due to an intramolecular charge transfer process which is supported by femtosecond IR spectroscopy. The observed dependence on the excitation wavelength is assigned to a change in the density of excited chromophores and therefore bears relevance for time resolved X-ray diffraction experiments.     

Change in optical properties of CuI crystals upon annealing in vacuum

Copper iodide crystals with different compositions of crystalline defects have been prepared using the developed technique for their synthesis and annealing in vacuum with subsequent quenching. The spectra of absorption, excitation, and photoluminescence of the CuI crystals, as well as their electrical resistance, have been analyzed. It has been found that the optical properties of the crystals change as a result of the increase in the number of point defects and inclusions of the second phase in the samples after high-temperature annealings (as compared to low-temperature annealings). This effect is caused by the deviation of the composition of the material from stoichiometry during annealing in vacuum.     

PbWO<Subscript>4</Subscript> crystal for laser energy accumulation and transformation

The picosecond interband two-photon laser excitation of PbWO₄ crystals at a temperature of 10 K leads to electronic excitation energy accumulation, which results in almost 100% induced absorption in the 450–750 nm spectral range. The relaxation time of this induced absorption exceeds 100 min. The electronic excitation energy accumulated in the PbWO₄ crystal at T = 10 K excites the intrinsic luminescence with a decay time longer than 45 min. The decay kinetics and the spectra of the intrinsic luminescence of the PbWO₄ crystal at a temperature of 10 K were measured under two-photon and single-photon excitation. The luminescence under two-photon and single-photon excitation revealed a difference in the structure of the spectra.     

Study of the precipitation behavior of NaCl:Pb and KCl:Pb by optical spectroscopy2

The aggregation and precipitation behavior of lead in NaCl and KCl crystals has been systematically investigated by absorption and luminescence spectroscopy. For NaCl, absorption bands at 265 and 285 nm have been identified which correspond to intermediate stages in the formation of a double band (262–266 nm) associated with PbCl₂ precipitates. The kinetics of growth during ageing as well as the thermal annihilation behavior have been obtained for all bands. The emission spectra for excitation at those absorption bands have also been determined. For KCl, absorption bands at 265 and 280 nm develop during ageing at 160 and 200°C and their growth-rate is markedly enhanced by plastic straining. Their emission spectra involve a main band at $\text{\$}\text{?}$550 nm. In contrast to NaCl, no stage has been found where those absorption bands feed into a final band, which could be associated with PbCl₂ precipitates.     

闪烁晶体的发光研究进展

概述了近年来闪烁体发光研究的进展,主要介绍用于未来高能物理实验的新型闪烁体发光机理研究,选取我们在研BaF₂,BaF₂:RE,CeF₃以及PbWO₄中的一些新进展。重点谈及三点:(1)在BaF₂的“价带^→芯带”跃迁发光研究基础上进行稀土(Gd³⁺-Eu³⁺)掺杂时观察到的量子剪裁以及对多光子发光的新思考;(2)CeF₃晶体发光的级联能量传递中,Ce³⁺(290nm发射带)与缺陷发光中心(340nm发射带)间能量传递及其传递效率的温度依赖;(3)PbWO₄晶体的发光中心研究中,提出以“WO₄^-2+O_i”绿光中心替代“WO³+F”中心观点的依据。同时也简介了医用闪烁体的最新进展。     

Transformation of resonant Raman scattering into luminescence in CdxZn1−xTe mixed crystals: Time-resolved spectroscopy

We report an experimental study of time characteristics of secondary emission in Cd_xZn_1-xTe mixed crystals (x = 0.32) under resonant excitation with a picosecond dye laser. When the incident laser frequency is tuned on to the luminescence maximum of localized excitons, the decay curve of the intensity of “Raman-like” lines exhibits a single exponential decay. Off resonance, however, a short-lived component corresponding to Raman scattering appears in addition to the long-lived component. The intensity of the Raman component relative to that of the luminescence component increases with increase of the off-resonance frequency. From these temporal behaviors, we have found, for the first time, the transformation of resonant Raman scattering into luminescence in mixed crystals as a function of incident frequencies.     

Study of enhanced red emission from Sm(Sal)3Phen ternary complexes in Poly Vinyl Alcohol film

In the present work, dinuclear complexes of salicylic acid (Sal) and 1,10-phenanthroline (Phen) were synthesized with different concentrations of Samarium ion (Sm³⁺) in Poly Vinyl Alcohol (PVA) polymer films and their structural and spectroscopic properties were investigated. Judd-Ofelt theory has been employed to estimate the several radiative parameters for SmCl₃ and Sm(Sal)₃Phen complex in PVA polymer film which are in fairly agreement between the experimental and the theoretical values supporting the J-O theory. Photoluminescence properties of the complex have been studied on 355 nm and 400 nm excitations in steady state as well as in time domain. On the basis of the UV-Vis absorption, FT-IR absorption, excitation, emission spectra and decay curves, spectroscopic properties of these films were studied and the photophysics involved was explained in terms of energy transfer and the RE encapsulation effect.     

Peculiarities of post-irradiation annealing of MgO crystals

The influence of high-temperature annealing on absorption spectra of nominally pure and impure MgO crystals irradiated in a nuclear reactor has been investigated. In nominally pure crystals, as a whole, the accumulation of defect aggregates of non-monotonous character takes place during the whole cycle of the action of radiation plus post-irradiation annealing: the creation of defects in the process of irradiation, their destruction by annealing at 700 °C and repeated creation at higher annealing temperature. In irradiated impure crystals, where the mentioned defects exist in larger quantities, their thermal reanimation is not observed after the decay at 700 °C.