共查询到20条相似文献,搜索用时 171 毫秒
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设计了含有InAs自组装量子点(SAQDs)的新型金属半导体金属隧穿结构,研究了其直流输运特性,观察到了电流迟滞回路现象.这种回路现象是由于紧邻金属肖特基接触的量子点充电和放电引起的,也可以说是由外加电压控制的量子点的单电子过程引起的.分析了量子点总体的充放电特性,量子点中电子在高电场下隧穿出量子点的概率变化决定了量子点的放电过程,而充电过程是由流过量子点层的二极管正向电流决定.理论拟合结果显示充电过程主要由于量子点基态能级俘获电子照成的,激发态对量子点充放电过程只有微弱影响.
关键词:
迟滞现象
自组装量子点
单电子过程 相似文献
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单电子效应与单电子晶体管 总被引:2,自引:0,他引:2
由于半导体超微细加工技术的发展,在半径为几百nm的量子点结构上观察到由单个电子的阻塞和隧穿引起的电流振荡,分别称为库仑阻塞,单电子隧穿和库仑振荡,与此效应有关的现象还有库仑台阶,旋转门效应,旋转门器件可利用作为电流标准测量,单电子晶体管将是下世纪大容量存贮器的最好选择,单电子效应的研究将开辟一门新的“人造原子物理学”。 相似文献
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当器件的尺度小型与电子的平均自由程相当时,电子的输运可以看作弹道输运。文章介绍了隧穿热电子晶体管输运放大器和电子能谱仪两种工作模式下的工作原理以及用共振隧穿热电子晶体管做成的记忆器,如果器件的尺寸进一步减小,电子的波动特性也必须考虑,文章介绍了研究这种器件中的输运特性的方法及量子干涉晶体管和量子反射晶体管的工作原理。 相似文献
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Based on the Kubo formula for an electron tunneling junction, we revisit the nonequilibrium transport properties through a quantum dot. Since the Fermi
level of the quantum dot is set by the conduction electrons of the leads, we
calculate the electron current from the left side by assuming the quantum
dot coupled to the right lead as another side of the tunneling junction, and the other way round is used to calculate the current from the right side. By symmetrizing these two currents, an effective local density states on the dot can be obtained, and is discussed at high and low temperatures, respectively. 相似文献
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A.K. Hüttel S. Ludwig K. Eberl J.P. Kotthaus 《Physica E: Low-dimensional Systems and Nanostructures》2006,35(2):278
Semiconductor quantum dots, so-called artificial atoms, have attracted considerable interest as mesoscopic model systems and prospective building blocks of the “quantum computer”. Electrons are trapped locally in quantum dots, forming controllable and coherent mesoscopic atom- and moleculelike systems. Electrostatic definition of quantum dots by use of top gates on a GaAs/AlGaAs heterostructure allows wide variation of the potential in the underlying two-dimensional electron gas. By distorting the trapping potential of a single quantum dot, a strongly tunnel-coupled double quantum dot can be defined. Transport spectroscopy measurements on such a system charged with N=0,1,2,… electrons are presented. In particular, the tunnel splitting of the double well potential for up to one trapped electron is unambiguously identified. It becomes visible as a pronounced level anticrossing at finite source drain voltage. A magnetic field perpendicular to the two-dimensional electron gas also modulates the orbital excitation energies in each individual dot. By tuning the asymmetry of the double well potential at finite magnetic field the chemical potentials of an excited state of one of the quantum dots and the ground state of the other quantum dot can be aligned, resulting in a second level anticrossing with a larger tunnel splitting. In addition, data on the two-electron transport spectrum are presented. 相似文献
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Yuanjie Chen 《中国物理 B》2021,30(12):128501-128501
We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular beam epitaxy and the DQD is defined by the top gate technique. Through the transport measurements, we demonstrate how a single quantum dot (QD) and a DQD can be defined in an InSb nanosheet by tuning voltages applied to the top gates. We also measure the charge stability diagrams of the DQD and show that the charge states and the inter-dot coupling between the two individual QDs in the DQD can be efficiently regulated by the top gates. Numerical simulations for the potential profile and charge density distribution in the DQD have been performed and the results support the experimental findings and provide a better understanding of fabrication and transport characteristics of the DQD in the InSb nanosheet. The achieved DQD in the two-dimensional InSb nanosheet possesses pronounced benefits in lateral scaling and can thus serve as a new building block for the developments of quantum computation and quantum simulation technologies. 相似文献
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Erwann Bocquillon Vincent Freulon François D. Parmentier Jean‐Marc Berroir Bernard Plaçais Claire Wahl Jérome Rech Thibaut Jonckheere Thierry Martin Charles Grenier Dario Ferraro Pascal Degiovanni Gwendal Fève 《Annalen der Physik》2014,526(1-2):1-30
The edge channels of the quantum Hall effect provide one dimensional chiral and ballistic wires along which electrons can be guided in an optics‐like setup. Electronic propagation can then be analyzed using concepts and tools derived from optics. After a brief review of electron optics experiments performed using stationary current sources which continuously emit electrons in the conductor, this paper focuses on triggered sources, which can generate on‐demand a single particle state. It first outlines the electron optics formalism and its analogies and differences with photon optics and then turns to the presentation of single electron emitters and their characterization through the measurements of the average electrical current and its correlations. This is followed by a discussion of electron quantum optics experiments in the Hanbury‐Brown and Twiss geometry where two‐particle interferences occur. Finally, Coulomb interactions effects and their influence on single electron states are considered. 相似文献
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利用半导体量子点阵列结构实现近邻耦合是规模化扩展自旋量子比特的主要方案之一. 随着量子点数目的增加, 量子点阵列器件的制作工艺及参数调控均愈加复杂. 本文介绍了一种重叠栅工艺结构, 利用多层相互重叠且具有不同功能的栅极定义量子点, 制作出结构紧凑、 调控性好的量子点阵列器件, 解决了工艺扩展的难题. 此外,本文发展了一套高效可靠的调控方法, 按顺序逐个添加量子点并建立虚拟电极, 实现了对量子点参数的独立控制,并且能够高效且独立地调控各量子点中的电子数目, 克服了大规模量子点阵列中电压参数配置的困难. 这些方法为未来实现大规模自旋比特阵列提供了一种标准化的方案. 相似文献
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We report electronic control and measurement of an imbalance between spin-up and spin-down electrons in micron-scale open quantum dots. Spin injection and detection were achieved with quantum point contacts tuned to have spin-selective transport, with four contacts per dot for realizing a nonlocal spin-valve circuit. This provides an interesting system for studies of spintronic effects since the contacts to reservoirs can be controlled and characterized with high accuracy. We show how this can be used to extract in a single measurement the relaxation time for electron spins inside a ballistic dot (tau(sf) approximately equal to 300 ps) and the degree of spin polarization of the contacts (P approximately equal to 0.8). 相似文献
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Full counting statistics as a probe of quantum coherence in a side-coupled double quantum dot system
We study theoretically the full counting statistics of electron transport through side-coupled double quantum dot (QD) based on an efficient particle-number-resolved master equation. It is demonstrated that the high-order cumulants of transport current are more sensitive to the quantum coherence than the average current, which can be used to probe the quantum coherence of the considered double QD system. Especially, quantum coherence plays a crucial role in determining whether the super-Poissonian noise occurs in the weak inter-dot hopping coupling regime depending on the corresponding QD-lead coupling, and the corresponding values of super-Poissonian noise can be relatively enhanced when considering the spins of conduction electrons. Moreover, this super-Poissonian noise bias range depends on the singly-occupied eigenstates of the system, which thus suggests a tunable super-Poissonian noise device. The occurrence-mechanism of super-Poissonian noise can be understood in terms of the interplay of quantum coherence and effective competition between fast-and-slow transport channels. 相似文献
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通过建立二维薛定谔方程和泊松方程数值模型,对基于硅量子点浮置栅和硅量子线沟道三栅结构单电子场效应管(FET)存储特性进行了研究.通过在不同尺寸、栅压和不同写入电荷条件下,对硅量子线沟道中电子浓度的二维有限元自洽数值求解,研究了在纳米尺度下硅量子线沟道中量子限制效应和电荷分布对于器件特性的影响.模拟结果发现,沟道的导通阈值电压随着尺寸的缩小而提高,并随浮置栅内存储的电子数目的增加而明显升高.然而,这样的增加趋势在受到纳米尺度沟道中高电荷密度的影响下将出现非线性饱和趋势.进一步研究发现,当沟道尺寸较小时,沟道
关键词:
三栅单电子FET存储器
量子效应
薛定谔方程
泊松方程 相似文献
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W. Zhang H.Z. Guo H. Yuan C.Y. Zhang C. Lu J. Gao 《Solid State Communications》2009,149(47-48):2228-2231
We report the transport properties of a surface acoustic wave based single electron transport device, which contains an unintentional quantum dot induced by background impurity potential fluctuations. It is found that the presence of the impurity potential can cause a deviation of the acoustoelectric current from its quantized value. Through the charging effect of the quantum dot induced by the impurity, we get an approximate relationship between the applied gate voltage and its corresponding electrostatic potential barrier height, together with the Coulomb charging energy needed to add a second electron into the dynamic quantum dot. Moreover, the amplitude of the surface acoustic wave is also estimated within a simple model. 相似文献