Injection locking of ArF excimer lasers

Injection-locking characteristics of an ArF excimer oscillator-amplifier laser are described including the use of stable-unstable optical cavities. Output intensities of 1 MW cm^–2 have been produced with 3 mJ output energy, a spectral linewidth better than 5×10^–3 nm and an injection locking efficiency of 0.9.     

Absorption of subpicosecond ultraviolet laser pulses in high-density plasma

The absorption of 250 fs KrF laser pulses incident on solid targets of aluminum, copper and gold has been measured for normal incidence as a function of laser intensity in the range of 10¹²–10¹⁴ W cm^–2 and as a function of polarization and angle of incidence for the intensity range of 10¹⁴–2.5×10¹⁵ W cm^–2. As the intensity increases from 10¹² W cm^–2 the reflectivity at normal incidence changes from the low-intensity mirror reflectivity value to values in the range of 0.5–0.61 at 10¹⁴ W cm^–2. For this intensity maximum absorption of 63–80% has been observed for p-polarized radiation at angles of incidence in the range of 54°–57°, increasing with atomic number. The results are compared with the expected Fresnel reflectivity from a sharp vacuum-plasma interface with the refractive index given by the Drude model and also to numerical calculations of reflectivity for various scale length density profiles. Qualitative agreement is found with the Fresnel/Drude model and quantitative agreement is noticed with the numerical calculations of absorption on a steep density profile with normalized collision frequencies, v/, in the range of 0.13–0.15 at critical density and normalized density gradient scale lengths, L/₀, in the range of 0.018–0.053 for a laser intensity of 10¹⁴ W cm^–2.At 2.5×10¹⁵ W cm^–2 a small amount of preplasma is present and maximum absorption of 64–76% has been observed for p-polarized radiation at angles of incidence in the range of 45°–50°.Dedicated to Prof. Dr. Rudolf Wienecke on the occasion of his 65^th birthdayOn leave from: Department of Electrical Engineering, University of Alberta, Edmonton, T6G 2G7, Canada     

A laser dry etch process for smooth continuous relief structures in InP

A laser induced etch process is described which uses a pulsed 248 nm KrF excimer laser and Cl₂ atmosphere for the fabrication of monolithic continuously curved reliefs in InP substrate. In a bakeable processing chamber with low base pressure a wide range of laser fluences is available for damage-free etching. Especially, by photothermal heating far above the melting point, mirrorlike smooth surfaces are obtained. The etch rate characteristics are correlated to the maximum surface temperature reached during the laser pulse. The etch rate is independent of pressure and gas flux in the ranges 0.1–10 mbar and 20–300 sccm, respectively. It increases, however, with the background substrate temperature. Etch rates of up to 3.6 nm/pulse or 4.3 lm/min are possible at 20 Hz pulse repetition rate without visible surface damage. The process exhibits a smooth increase of the etch rate from 1 to 3 nm/pulse between 200 and 300 mJ/cm², which could be used for making curved reliefs by optical transmission variations on the projection mask.     

Nitrogen atom detection in low-pressure flames by two-photon laser-excited fluorescence

Nitrogen atoms have been detected in stoichiometric flat premixed H₂/O₂/N₂ flames at 33 and 96 mbar doped with small amounts of NH₃, HCN, and (CN)₂ using two-photon laser excitation at 211 nm and fluorescence detection around 870 nm. The shape of the fluorescence intensity profiles versus height above the burner surface is markedly different for the different additives. Using measured quenching rate coefficients and calibrating with the aid of known N-atom concentrations in a discharge flow reactor, peak N-atom concentrations in these flames are estimated to be on the order of 10¹²–5×10¹³ cm^–3; the detection limit is about 1×10¹¹ cm^–3.     

Laser annealing of GaAs dual implanted with Si and P ions

Laser annealing of SI(100) GaAs:Cr implanted either with Si⁺ ions (150 keV, 6×10¹³-1×10¹⁵cm^–2) or dual implanted with Si⁺ ions (150 keV, 6×10¹⁴–1×10¹⁵cm^–2) and P⁺ ions (160 keV, 1×10¹⁴–1×10¹⁵cm^–2) has been examined using backscatteringchannelling technique and via electrical measurement of Hall effect. It has been found that at laser energy densities 0·8 J cm^–2 a full recovery of the sample surface occurs. In dual implanted samples (1×10¹⁵ Si⁺ cm^–2+1×10¹⁵P⁺cm^–2) up to 46% of Si atoms become electrically active after the laser annealing. Resultant Hall mobility of carriers is, however,lower than that obtained after common thermal annealing.The authors are pleased to take the opportunity of thanking Professor M. Kubát for his encouragement and continuous support. Accelerator staff is gratefully acknowledged for its assistance in the course of experiments.     

Relaxation oscillations and damping factors of 1.3 μm In(Ga)As/GaAs quantum-dot lasers

In(Ga)As/GaAs quantum-dot (QD) lasers with emission wavelength at 1295 nm at room temperature are fabricated. The laser active region contains a threefold stack of QD layers with surface dot density of 4.56 × 10¹⁰ cm^–2. The laser structure is aluminum-free with InGaP as cladding layers. Threshold current density of a narrow stripe laser of 8 m wide and 3.5 mm long is 152.5 A/cm². The highest relaxation oscillation frequency measured at room temperature is 1.8 GHz, corresponding to a modulation bandwidth of 2.8 GHz due to the small damping factor. From the above measurement, the differential gain and gain compression factor were extracted to be 4.3 × 10^–16 cm² and 3.4 × 10 ^–17 cm ³, respectively. Using these parameters, the maximum modulation bandwidth f _{3 dB max} is estimated as 7.9 GHz.     

Diode laser measurements of line strengths and collisional half-widths in thev2band of14NH3 and15NH3

A tunable diode laser spectrometer was used to perform measurements of half-widths and intensities of several rotational lines in v₂-band of ammonia. The intensity measurements of 16 lines of¹⁵NH₃ allowed us to estimate v₂-band strength of this molecule at 298 K to be S_v ⁰=(550±10) cm^–2-atm^–1.     

Power optimization of a Tl photodissociation laser

Conditions for the operation of a Tl photodissociation laser, in view of power optimization, have been determined. A crucial parameter is found to be quenching of the upper laser level. A value for the quenching cross-section of the 7² S _1/2 Tl state by the TlI molecules of 2×10^–14 cm² has been measured.     

XeCl-laser-generated ablation products from a nitrogen-rich polymer studied by laser-ionization mass spectrometry

Laser-ionization time-of-flight mass spectrometry has been used to probe laser-ablation products from a nitrogen-rich polymer at a wavelength of 308 nm. The ablation products at a laser fluence of 150 mJ/cm² showed, similar to 532 nm ablation studied previously [18], two strong peaks due to neutral species that were assigned to C⁺ and CN⁺, as well as several weak peaks that were assigned to CH⁺, HCN⁺, HCNH⁺, H_nN–CN⁺ (n=1–3), and H₂N–C=N–CN⁺ or H₂N–C=N–CN⁺. The ablation products at 870 mJ/cm² revealed, in addition to a broad signal due to ionic products generated directly by the ablation laser, several peaks due to neutral products that were assigned to C⁺, C ₂ ⁺ , C ₃ ⁺ , CN⁺, HCN⁺, HCNH⁺, and NCCN⁺. The most probable flight velocities for major neutral products are 5.7×10⁴ cm/s at 150 mJ/cm² and 2.3–2.7×10⁴ cm/s at 870 mJ/cm². The results at a laser fluence of 150 mJ/cm² support the finding that the translational energy of the tragments has importance for the collision-induced product generation in the laser plume, as suggested earlier [18]. Furthermore, the product generation at 870 mJ/cm² is interpreted by the ejection of small neutral and ionic fragments, and subsequent reactions among the fragments.     

Laser-fluorescence diagnostics for condensation in laser-ablated copper plasmas

We are investigating the thermodynamic conditions under which condensation occurs in laser ablated copper plasma plumes. The plasma is created by XeCl excimer laser ablation (308 nm, 300 mJ/pulse) at power densities from 500–1000 MW/cm² into backing pressures of helium in the range 0–50 torr. We use laser-induced fluorescence (LIF) to probe velocity and relative density of both atomic copper and the copper dimer molecule, Cu₂, which is formed during condensation onset. At low pressure (10 mtorr), the atomic Cu velocity peaks at approximately 2×10⁶ cm/s. Copper dimer time-of-flight data suggest that condensation onset occurs after the Cu atoms have slowed very significantly. Excitation scans of the Cu₂A-X (0,0) and (1,1) bands yield a rotational and vibrational temperature in the neighborhood of 300 K for all conditions studied. Such low temperatures support the theory that Cu₂ is formed under thermally and translationally cold conditions. Direct laser beam absorption is used to determine the number density of atomic copper. Typical densities attained with 5 torr of helium backing gas are 6–8×10¹³ cm^–3. Rayleigh scattering from particulate is easily observable under conditions favorable to particulate production.     

Efficient phase-matched third harmonic light generation in hexafluoroisopropanol solutions of a pyrimidonecarbocyanine dye

The phase-matched collinear third harmonic generation of picosecond laser pulses in a 0.0825 molar hexafluoroisopropanol solution of a pyrimidonecarbocyanine dye is studied. The fundamental pulses are generated in a passively mode-locked Nd-phosphate glass laser. The saturation of third harmonic generation at high intensities is investigated. The influences of two-photon absorption, excited-state absorption, and amplified spontaneous emission are discussed. For input peak intensities above 10¹¹ W/cm² a third harmonic energy conversion of about 2×10^–4 is achieved.     

Xe2Cl fluorescence and absorption in self-sustained discharge XeCl lasers

Fluorescence at 490 nm from the triatomic excimer Xe₂Cl^* has been investigated to determine the 308 nm absorption due to this species in an x-ray preionized, self-sustained gas discharge XeCl laser. The dependence of Xe₂Cl^* density on laser intensity (at 308 nm), buffer gas and Xe and HCl partial pressures has been determined for discharges with a peak electrical power deposition of 2.5 GWl^–1. Xe₂Cl^* absorption is estimated to reach 0.6% cm^–1 under non-lasing conditions but decreases to a non-saturable 0.2% cm^–1 for intracavity laser intensity>1 MW cm^–2. XeCl^* and Xe₂Cl^* fluorescence intensities were found to be a similar for both helium and neon buffer gases but laser output was a factor of two greater with a neon buffer.     

Hard X-ray generation from microdroplets in intense laser fields

Microdroplets of 15-μm diameter are subjected to ultra-short laser pulses of intensities up to 10¹⁵Wcm⁻² to produce hot dense plasma. The hot electrons produced in the microdroplet plasma result in efficient generation of hard X-rays in the range 50–150keV at an irradiance as low as 8×10¹⁴Wcm⁻². The X-ray source efficiency is estimated to be about 2 ×10⁻⁷%. A prepulse that is about 11ns ahead of the main pulse strongly influences the droplet plasma and the resulting X-ray emission. For a similar laser prepulse and intensity, no measurable hard X-ray emission is observed when the laser is focused on a solid target of similar composition and this indicates that liquid droplet targets are best suited for hard X-ray generation in laser–plasma interactions.     

A superheated Na cell for X-ray photoionization experiments

The performance of a superheated alkali vapor cell, with a geometry suitable for x-ray photoionization experiments, is described. An internal heater was used to superheat sodium vapor in a split-wick heat pipe. At a Na pressure of 20 Torr, the transmission through the cell in the region of theC–X molecular band of Na₂ increased to 50% from the 5% observed when the cell was operated in a conventional heat-pipe mode. In the presence of a Na atom density of 2×10¹⁷ cm^–3, the average molecule density over the length of the cell was measured to be 2.5×10¹⁵ cm^–3. In the hot central region of the superheated cell, the molecule density was predicted to have been reduced by a factor of 50 to 3×10¹⁴ cm^–3.     

Assignments of optically pumped CD3OH laser lines

Six FIR laser lines from CD₃OH pumped by the 10R(36) and the 10R(18) CO₂ laser lines are assigned to specific rotational energy levels in the excited C–0 stretch state. It is found that their upper laser levels are shifted by a Fermi resonance between the C–0 stretch vibration and the third and forth harmonics of the torsional mode. The Fermi resonance shifts are +0.332 cm^–1 and +2.251 cm^–1 for the upper laser levels pumped by the 10R(36) and the 10R(18) CO₂ laser lines, respectively. Calculated frequencies of the pump and the laser transitions agree with those of the pump CO₂ laser lines and the observed FIR laser lines within estimated accuracy.     

Intra-cavity spectroscopy with diode lasers

A multi-mode diode laser with an external cavity is studied experimentally and theoretically for its application to intra-cavity spectroscopy. One facet of a typical Ga_0.89Al_0.11As laser diode was antireflection-coated by deposition of HfO₂ such that 10^–3 residual reflectivity was left over. This diode was placed in an external optical cavity. The emission spectrum of this diode laser is highly sensitive to any frequency-dependent loss in the cavity, and the detectivity of such a loss grows with the pump rate. Even close to threshold, the absorption at 780 nm of Rb atoms with a density of 5×10¹⁰ cm^–3 has been detected. An adequate model for diode lasers based on rate equations and including frequency-dependent gain saturation is developed and applied to the calculations of output spectra. The sensitivity of these spectra to intra-cavity absorption is determined by the overall cavity loss — which is rather high — and the fraction of spontaneous emission in the total emission, in contrast with dye lasers where it is limited by nonlinear mode coupling. Various criteria for the sensitivity are suggested. The smallest detectable absorption with a perfectly antireflection-coated laser is 10^–6 cm^–1. Improvement of the characteristics of the laser diode would increase the sensitivity.     

R branch tuning characteristics of the13CH3F Raman FIR laser

Summary We described a¹³CH₃F Raman laser pumped by a grating tuned 20 atmospheres CO₂ laser. The emission characteristics of the¹³CH₃F laser extends from 14 cm^–1–35 cm^–1 and from 49 cm^–1–72 cm^–1; about 65% of these frequency ranges can be covered with tunable radiation. The characteristics shows a strong dependence on the rotaional quantum numbers of the states involved in the Raman laser transitions and, within each tuning interval, on the frequency offset with respect to the frequencies of resonant transitions. We obtained, at 51 cm^–1, a maximum FIR laser pulse energy of about 800 J (at a pump energy of 200 mJ), corresponding to a photon conversion of about 8%. In some cases we have observed simultaneous emission at a Raman and a cascade frequency. In addition, FIR emission power dependence on¹³CH₃F gas pressure and pump pulse power were investigated for different J quantum numbers.     

Small angle neutron scattering from oxygen precipitates in silicon

The formation of silicon oxide precipitates from Czochralski grown silicon depends on the time and temperature of the heat treatment as well as on the initial content of interstitially dissolved oxygen. Samples containing between 5×10¹⁷ O_i/cm³ and 13×10¹⁷ O_i/cm³ have been heated at 750° C for 96 h. SiO₂ precipitates of various shape and size have been obtained and investigated by means of small angle neutron scattering (SANS) in the Q-range 0.05 Å^–1<Q<0.2 Å^–1. The obtained SANS patterns reveal a typical anisotropy of their intensity distribution, which splits into a central peak at Q<0.1 Å^–1 due to the shape of the individual particles and a number of weak intensities for large Q-values, originating from a correlation between defects, possibly between the precipitates. While these correlation peaks in the SANS patterns are seen best for rather low values of about (5–7)×10¹⁷ O_i/cm³ oxygen content, the central peak anisotropy is most pronounced for higher values of ca 10×10¹⁷ O_i/cm³. The integrated intensity of the central peak increases with increasing initial oxygen content. For comparison, untreated samples of the same initial oxygen content do not reveal any anisotropic SAN scattering or a broadened central peak beam.     

Ground-state depleted solid-state lasers: principles, characteristics and scaling

A novel class of rare-earth-doped solid-state lasers is described. The ground-state depleted laser is pumped by an intense (more than tens of kW cm^–2) narrow-band (less than a few nm) laser source and is characterized by: (1) an unusually low laser ion doping density (5 to 10×10¹⁸ion cm^–3), (2) an unusually large fractional excited population inversion density (4 to 8×10¹⁸ ion cm^–3, or >75%), (3) a gain element that is optically thick at the pump wavelength and (4) a gain element that has a substantially uniform gain distribution due to a bleaching of the pump transition at the pump intensity utilized. These features enable efficient room-temperature operation of rare-earth-ion laser transitions terminating on the ground manifold. The relationships between laser parameters (cross-sections, saturation fluences and fluxes, bleaching wave velocities, etc.) are given and laser performance scaling relationships are presented and discussed.     

Electrical properties of doped 3-tetradecylpolypyrrole/metal devices

The electrical properties of devices made of doped 3-tetradecylpolypyrrole (PPy-C₁₄) thin films sandwiched between indium-tin-oxyde (ITO) and gold metal electrodes are reported. The current density–voltage (J–V) curves are asymmetric and nonlinear implying a non Ohmic rectifying contact. Using standard thermionic emission theory (Schottky) J–V characteristics were satisfactorily fitted with a saturation current of J₀=1.5×10^-5 A cm^-2, a barrier height of ϕ_b=0.7 eV, and an ideality factor of n=5.3. Characteristics from the plot of J–V versus 1/T show that the activation energy of the thermionic emission process is higher below the glass transition temperature of PPy-C₁₄ (T_g=45 °C) than above, which seems to indicate that the hopping conduction process is enhanced at T>T_g. The carrier concentration has been calculated from capacitance–voltage (C-V) measurements (N=1.9×10¹⁷ cm^-3) allowing estimation of the carrier mobility μ=2.6×10^-2 cm² V^-1 s^-1. PACS 73.61.Ph; 73.40.Sx; 73.30.+y