Diffusion of a test electron beam in a discrete spectrum of waves propagating along a traveling wave tube

The velocity diffusion of particles in a field of randomly phased waves is experimentally investigated. An arbitrary waveform generator is used to launch a prescribed discrete spectrum of waves along the helix of a traveling wave tube. A cold test electron beam propagates along the axis of the tube and interacts with the waves without self-consistently perturbing their amplitudes. A trochoidal energy analyzer records the beam energy distribution at the output of the tube. The energy spread of the beam is measured as the position of the emitter probe is varied. A velocity diffusion coefficient can thus be measured. Two different situations are compared: one with a large overlap parameter between neighboring modes where standard quasilinear diffusion theory is valid; the other one with an intermediate overlap parameter where numerical simulations have shown that the diffusion coefficient exceeds the quasilinear value by a factor of about 2.3.     

Smolukhovsky problem for electrons in a metal

We find an analytic solution of the Smolukhovsky problem of the temperature and electric potential jumps in a metal under the action of the temperature gradient normal to the surface. We take the character of the electron energy accommodation on the surface into account. We find the analytic expressions for the electric field generated by heat processes, for the temperature distribution, and for the electric potential.Translated from Teoreticheskaya i Matematicheskaya Fizika, Vol. 142, No. 1, pp. 93–111, January, 2005.     

Numerical study of the metal vapour transport in tungsten inert-gas welding in argon for stainless steel

Metal vapour emanating from the weld pool during tungsten-inert-gas (TIG) welding affects the arc welding process. To understand the transport mechanisms of metal vapour in a TIG arc, an axisymmetric computational model is developed that includes the tungsten cathode, stainless-steel anode workpiece and the arc plasma region self-consistently. The combined diffusion coefficient method, which calculates diffusion coefficients due to mole fraction gradients (ordinary diffusion), temperature gradients, pressure gradients and the electric field is used to treat iron–chromium–argon and iron–chromium–helium plasmas. It was found that in both cases, metal vapours can reach the cathode region. The effect of different diffusion coefficients on metal vapour transport was investigated. It was found that ordinary diffusion is the main driving force for upward metal vapour diffusion away from the anode workpiece in an argon arc. The diffusive transport carries the metal vapour into the recirculating convective flow, which then transports the metal vapour to the cathode region. Here the upward diffusion driven by the temperature gradient and electric field leads to the build of high concentrations of the metal vapours adjacent to the cathode. In the helium arc, in contrast, metal vapour is transported upwards from the workpiece by electric field diffusion, which is much stronger in this case. Spectroscopic measurements of atomic chromium emission show that metal vapour can reach the cathode region in an argon TIG arc, providing support for the predictions of the model. Only by taking into account all diffusion driving forces is it possible to predict the distribution of metal vapour in a TIG welding arc.     

Existence analysis for a simplified transient energy‐transport model for semiconductors

A simplified transient energy‐transport system for semiconductors subject to mixed Dirichlet–Neumann boundary conditions is analyzed. The model is formally derived from the non‐isothermal hydrodynamic equations in a particular vanishing momentum relaxation limit. It consists of a drift‐diffusion‐type equation for the electron density, involving temperature gradients, a nonlinear heat equation for the electron temperature, and the Poisson equation for the electric potential. The global‐in‐time existence of bounded weak solutions is proved. The proof is based on the Stampacchia truncation method and a careful use of the temperature equation. Under some regularity assumptions on the gradients of the variables, the uniqueness of solutions is shown. Finally, numerical simulations for a ballistic diode in one space dimension illustrate the behavior of the solutions. Copyright © 2012 John Wiley & Sons, Ltd.     

Thermomechanical Simulation of the Electron Beam Melting Process for TiAl6V4

In the present contribution a nonlinear thermomechanical finite element model with temperature dependent material parameters is used to simulate the electron beam melting process for TiAl6V4. The beam is modeled as a moving heat source and the isentropic split solution scheme is applied. The temperature and stress distribution during the process were simulated and showed sound results from a qualitative point of view. (© 2014 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim)     

Multidimensional Tests of Superelastic,Polycristalline NiTi under Isothermal Conditions

Different isothermal and non-isothermal tension/torsion tests are conducted on hourglass-shaped, superelastic NiTi specimens. A new measurement device based on inductive displacement transducers is presented allowing for a directly decoupled measurement of twist and elongation at the same measuring points within the gage length. Thus, not only measuring but also controlling the deformation of the specimen is possible. The specimen temperature is actively controlled to keep the temperature deviation as low as possible and to be able to react immediately to sudden changes in the temperature field due to latent heat generation/absorption during phase transitions. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)     

1D numerical simulation of charge trapping in an insulator submitted to an electron beam irradiation. Part I: Computation of the initial secondary electron emission yield

The aim of this work is to study by numerical simulation a mathematical modelling technique describing charge trapping during initial charge injection in an insulator submitted to electron beam irradiation. A two-fluxes method described by a set of two stationary transport equations is used to split the electron current j_e(z) into coupled forward j_e+(z) and backward j_e?(z) currents and such that j_e(z) = j_e+(z) ? j_e?(z). The sparse algebraic linear system, resulting from the vertex-centered finite-volume discretization scheme is solved by an iterative decoupled fixed point method which involves the direct inversion of a bi-diagonal matrix.The sensitivity of the initial secondary electron emission yield with respect to the energy of incident primary electrons beam, that is penetration depth of the incident beam, or electron cross sections (absorption and diffusion) is investigated by numerical simulations.     

Simultaneous identification of diffusion coefficient,spacewise dependent source and initial value for one‐dimensional heat equation

This paper deals with an inverse problem of determining the diffusion coefficient, spacewise dependent source term, and the initial value simultaneously for a one‐dimensional heat equation based on the boundary control, boundary measurement, and temperature distribution at a given single instant in time. By a Dirichlet series representation for the boundary observation, the identification of the diffusion coefficient and initial value can be transformed into a spectral estimation problem of an exponential series with measurement error, which is solved by the matrix pencil method. For the identification of the source term, a finite difference approximation method in conjunction with the truncated singular value decomposition is adopted, where the regularization parameter is determined by the generalized cross‐validation criterion. Numerical simulations are performed to verify the result of the proposed algorithm. Copyright © 2016 John Wiley & Sons, Ltd.     

Numerical method of mixed finite volume-modified upwind fractional step difference for three-dimensional semiconductor device transient behavior problems

Transient behavior of three-dimensional semiconductor device with heat conduction is described by a coupled mathematical system of four quasi-linear partial differential equations with initial-boundary value conditions. The electric potential is defined by an elliptic equation and it appears in the following three equations via the electric field intensity. The electron concentration and the hole concentration are determined by convection-dominated diffusion equations and the temperature is interpreted by a heat conduction equation. A mixed finite volume element approximation, keeping physical conservation law, is used to get numerical values of the electric potential and the accuracy is improved one order. Two concentrations and the heat conduction are computed by a fractional step method combined with second-order upwind differences. This method can overcome numerical oscillation, dispersion and decreases computational complexity. Then a three-dimensional problem is solved by computing three successive one-dimensional problems where the method of speedup is used and the computational work is greatly shortened. An optimal second-order error estimate in L² norm is derived by using prior estimate theory and other special techniques of partial differential equations. This type of mass-conservative parallel method is important and is most valuable in numerical analysis and application of semiconductor device.     

异质材料有限长微通道电渗流热效应

采用数值方法,分析有限长PDMS/玻璃微通道电渗流热效应．数值求解双电层的Poisson-Boltzmann方程,液体流动的Navier-Stokes方程和流-固耦合的热输运方程,分析二维微通道电渗流的温度特性．考虑温度变化对流体特性（介电系数、粘度、热和电传导率）的反馈效应．数值结果表明,在通道进口附近有一段热发展长度,这里的流动速度、温度、压强和电场快速变化,然后趋向到一个稳定状态．在高电场和厚芯片的情况下,热发展长度可以占据相当一部分的微通道．电渗流稳定态温度随外加电场和芯片厚度的增加而升高．由于壁面材料的热特性差异,在稳定态时的PDMS壁面温度比玻璃壁面温度高．研究还发现在微通道的纵向和横向截面有温度变化．壁面温升降低双电层电荷密度．微通道纵向温度变化诱发流体压强梯度和改变微通道电场特性．微通道进流温度不改变热稳定态的温度和热发展长度．     

二维热传导型半导体问题的一个二阶格式

热传导型半导体器件瞬态问题的数学模型由四个拟线性偏微分方程所组成的方程组的初边值问题来描述。其中电子位势方程是椭圆型的,电子和空穴浓度方程是对流扩散型的,温度方程为热传导型的。本文对二维热传导型半导体的一类混合初边值问题利用降阶法给出了一个二阶差分格式,并对其进行了详细的理论分析,得到了离散的犾２ 误差估计结果。     

热-压电效应对轴压混合层合圆柱曲板后屈曲的影响

基于Karman-Donnell型非线性壳体方程，给出带压电作动器混合层合圆柱曲板在机械荷载、电荷载和热荷载作用下的后屈曲分析．假定温度场为均匀分布，电场仅有沿板厚方向的分量Ez，且假定材料性能常数与温度和电场的变化无关。将壳体屈曲的边界层理论推广到混合层合圆柱曲板受复合荷载作用的情况.相应的奇异摄动法用于确定圆柱曲板的屈曲荷载和后屈曲平衡路径.分析中同时考虑非线性前屈曲变形和初始几何缺陷的影响．数值算例给出完善和非完善，含整体覆盖或内埋压电作动器正交铺设层合圆柱曲板的后屈曲平衡路径。讨论了温度变化、控制电压、铺层方式、面内边界条件和初始几何缺陷等各种参数变化的影响。     

A mixed-finite volume element coupled with the method of characteristic fractional step difference for simulating transient behavior of semiconductor device of heat conductor and its numerical analysis

The mathematical system is formulated by four partial differential equations combined with initialboundary value conditions to describe transient behavior of three-dimensional semiconductor device with heat conduction. The first equation of an elliptic type is defined with respect to the electric potential, the successive two equations of convection dominated diffusion type are given to define the electron concentration and the hole concentration, and the fourth equation of heat conductor is for the temperature. The electric potential appears in the equations of electron concentration, hole concentration and the temperature in the formation of the intensity. A mass conservative numerical approximation of the electric potential is presented by using the mixed finite volume element, and the accuracy of computation of the electric intensity is improved one order. The method of characteristic fractional step difference is applied to discretize the other three equations, where the hyperbolic terms are approximated by a difference quotient in the characteristics and the diffusion terms are discretized by the method of fractional step difference. The computation of three-dimensional problem works efficiently by dividing it into three one-dimensional subproblems and every subproblem is solved by the method of speedup in parallel. Using a pair of different grids (coarse partition and refined partition), piecewise threefold quadratic interpolation, variation theory, multiplicative commutation rule of differential operators, mathematical induction and priori estimates theory and special technique of differential equations, we derive an optimal second order estimate in L²-norm. This numerical method is valuable in the simulation of semiconductor device theoretically and actually, and gives a powerful tool to solve the international problem presented by J. Douglas, Jr.     

Wave function and the probability current distribution for a bound electron moving in a uniform magnetic field

We study the effects of electromagnetic fields on nonrelativistic charged spinning particles bound by a short-range potential. We analyze the exact solution of the Pauli equation for an electron moving in the potential field determined by the three-dimensional δ-well in the presence of a strong magnetic field. We obtain asymptotic expressions for this solution for different values of the problem parameters. In addition, we consider electron probability currents and their dependence on the magnetic field. We show that including the spin in the framework of the nonrelativistic approach allows correctly taking the effect of the magnetic field on the electric current into account. The obtained dependences of the current distribution, which is an experimentally observable quantity, can be manifested directly in scattering processes, for example.     

Advanced finite element formulations for modeling thin piezoelectric structures

This contribution is concerned with mixed finite element formulations for modeling piezoelectric beam and shell structures. Due to the electromechanical coupling, specific deformation modes are joined with electric field components. In bending dominated problems incompatible approximation functions of these fields cause incorrect results. These effects occur in standard finite element formulations, where interpolation functions of lowest order are used. A mixed variational approach is introduced to overcome these problems. The mixed formulation allows for a consistent approximation of the electromechanical coupled problem. It utilizes six independent fields and could be derived from a Hu-Washizu variational principle. Displacements, rotations and the electric potential are employed as nodal degrees of freedom. According to the Timoshenko theory (beam) and the Reissner-Mindlin theory (shell), the formulations account for constant transversal shear strains. To incorporate three dimensional constitutive relations all transversal components of the electric field and the strain field are enriched by mixed finite element interpolations. Thus the complete piezoelectric coupling is appropriately captured. The common assumption of vanishing transversal stress and dielectric displacement components is enforced in an integral sense. Some numerical examples will demonstrate the capability of the presented finite element formulation. (© 2011 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim)     

On a Painlevé II Model in Steady Electrolysis: Application of a Bäcklund Transformation

A model equation of Painlevé II type was introduced by Bass in 1964 in connection with a boundary value problem which describes the electric field distribution in a region x > 0 occupied by an electrolyte. This is possibly the earliest explicit physical application of a Painlevé equation to be found in the literature. Here we return to this problem informed by the subsequent discovery of a Bäcklund transformation for Painlevé II. This enables us to construct exact representations for the electric field and ion distributions for boundary value problems wherein the ratio of fluxes of the positive and negative ions at the boundary adopts one of an infinite sequence of values.     

半导体设备热传输中的隐式-显式多步有限元法

考虑热引导半导体设备中的传输行为，用一个有限元法离散电子位势所满足的Rpoisson方程；用隐式－显式多步有限元法处理电子密度和空洞密度满足的两个对流－扩散方程，热传导方程用隐式多步有限元法离散，推导了优化的L^2范误差估计。     

Existence and global bounds for a fluid model of plasma display technology

This article considers the fluid model for the discharge of plasma particle species in display technology. The fluid equations are coupled with Poisson's equation, which describes the effect of the charged particles on the electric field. The diffusion and mobility coefficients for the positive ion particles depend on the electric field, while those for the electrons depend on the electron mean energy. The reaction rates are proportional to the products of the densities of the reacting particles involved in the particular ionization, conversion or recombination reactions. Moreover, the ionization coefficients are dependent on the electric field, which varies spatially and temporally. The main ionization and discharge reactions are described by an initial-boundary value problem for a system of coupled parabolic–elliptic partial differential equations. The system is first analyzed by upper–lower solution method. By means of the a priori bounds obtained for an arbitrary time, the existence of solution for the initial-boundary value problem is proved in an appropriate Hölder space.