Efficient generation of 200 mJ nanosecond pulses at 100 Hz repetition rate from a cryogenic cooled Yb:YAG MOPA system

A diode-pumped Master Oscillator Power Amplifier (MOPA) laser system based on cryogenic cooled Yb:YAG has been designed, developed and its output performance characterised. The laser system consists of a fibre oscillator, an active mirror regenerative amplifier and a four pass main amplifier. 2.4 mJ, 10 ns, 100 Hz seed pulses from the fibre oscillator/regenerative amplifier arrangement were amplified up to pulse energies of over 200 mJ by using the four pass main amplifier arrangement. As a further study we have obtained an increased slope efficiency of 40% and an optical-to-optical efficiency of 30% using a pinhole vacuum spatial filter/image relay for laser mode control. With 1.8 mJ input seed pulses, output pulse energies of around 150 mJ were achieved.     

Passive Q-switching of short-length Tm-doped silica fiber lasers by polycrystalline Cr:ZnSe microchips

We demonstrate passive Q-switching of short-length double-clad Tm³⁺-doped silica fiber lasers near 2 μm pumped by a laser diode array (LDA) at 790 nm. Polycrystalline Cr²⁺:ZnSe microchips with thickness from 0.3 to 1 mm are adopted as the Q-switching elements. Pulse duration of 120 ns, pulse energy over 14 μJ and repetition rate of 53 kHz are obtained from a 5-cm long fiber laser. As high as 530 kHz repetition rate is achieved from a 50-cm long fiber laser at ∼10-W pump power. The performance of the Q-switched fiber lasers as a function of fiber length is also analyzed.     

Efficient amplification of sub-picosecond pulses of a non-CW dye laser

Efficient amplification in a dye laser amplifier is investigated theoretically and experimentally. A five-level rate equation approach is considered including rotational relaxation of the dye molecules. The effects of the pump pulse duration and of the parameters of the input pulse are discussed. The results are compared with experimental data for 0.5 ps pulses of a pulsed dye laser. Conversion efficiencies >10% are achieved for a single pass amplifier using Nd:YAG pump pulses of 2 ns while an effective fluorescence lifetime of 1.7±0.2 ns is determined for the gain medium rhodamine 6G. The triple pass amplifier stage of the laser system achieves an energy conversion of 4% with 40 J output pulses.     

High-beam-quality, 5.1 J, 108 Hz diode-pumped Nd:YAG rod oscillator-amplifier laser system

A high efficiency, high beam quality diode-pumped Nd:YAG master oscillator power-amplifier (MOPA) laser with six amplifier stages is demonstrated. The oscillator with two-rod birefringence compensation was designed as a thermally determined near hemispherical resonator, which presents a pulse energy of 223 mJ with a beam quality value of M² = 1.29 at a repetition rate of 108 Hz. The MOPA system delivers a pulse energy of 5.1 J with a pulse width of 230 μs, a M² factor of 3.6 and an optical-to-optical efficiency of 38.5%. To the best of our knowledge, this is the highest pulse energy for a diode-pumped Nd:YAG rod laser operation with a high beam quality and a pulse width of hundreds of microseconds at a repetition rate of over 100 Hz.     

Passively Q-switched diode-pumped Cr:YAG/Nd:GdVO4 monolithic microchip laser

The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO₄ crystal and a Cr⁴⁺:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO₄ optically contacted on a 0.4 mm long Cr⁴⁺:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.     

LD end pumped, actively mode locked and passively Q-switched Nd:YAP laser at 1341 nm

An end pumped Nd:YAP laser at 1341 nm is actively mode locked and passively Q-switched. Pumping was done with a pulsed high power laser diode with maximum power 425 W. V³⁺:YAG with 61% initial transmission served as saturable absorber, and an acousto-optic modulator is used for active mode locking. The output pulse train with 69 ns duration has a total energy of 3.2 mJ with ±4% shot-to-shot fluctuation. The peak output energy of a single mode locked pulse is 0.25 mJ. The pulse duration of a single mode locked pulse is less than 800 ps. The output laser beam is nearly diffraction limited with 1.6 mm diameter, and beam propagation factor M² about 1.3.     

High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns

We have demonstrated a compact and an efficient passively Q-switched microchip Nd:YVO₄ laser by using a composite semiconductor absorber as well as an output coupler. The composite semiconductor absorber was composed of an LT (low-temperature grown) In_0.25Ga_0.75As absorber and a pure GaAs absorber. To our knowledge, it was the first demonstration of the special absorber for Q-switching operation of microchip lasers. Laser pulses with durations of 1.1 ns were generated with a 350 μm thick laser crystal and the repetition rate of the pulses was as high as 4.6 MHz. The average output power was 120 mW at the pump power of 700 mW. Pulse duration can be varied from 1.1 to 15.7 ns by changing the cavity length from 0.45 to 5 mm. Pulses with duration of 1.67 and 2.41 ns were also obtained with a 0.7 mm thick laser crystal and a 1 mm thick laser crystal, respectively.     

Self-Q-switched and mode-locked 946 nm Cr,Nd:YAG laser

A simultaneous self-Q-switched and mode-locked diode-pumped 946 nm laser by using a Cr,Nd:YAG crystal as gain medium as well as saturable absorber is demonstrated for the first time as we know. The maximum average output power of 751 mW with a slope efficiency of 18.38% is obtained at an intra-cavity average peak power intensity of 4.83 × 10⁶ W/cm². Under this circumstance, the repetition rate of Q-switched envelopes is 9.63 kHz and the pulse width is about 460 ns. Almost 100% mode-locked modulation depth is obtained at all time in the experiment process whether the incident pump power is low or high. The repetition rate of mode-locked pulses within a Q-switched envelope is 135.13 MHz and the mode-locked pulse width is within 600 ps. The laser produces high-quality pulses in TEM₀₀-mode in the simultaneous self-Q-switched and mode-locked experiment.     

Efficient passively Q-switched operation of a diode-pumped Nd:GGG laser with a Cr:YAG saturable absorber

The continuous-wave (cw) and passive Q-switching operation of a diode-end-pumped gadolinium gallium garnet doped with neodymium (Nd:GGG) laser at 1062 nm was realized. A maximum cw output power of 6.9 W was obtained. The corresponding optical conversion efficiency was 50.9%, and the slope efficiency was determined to be 51.4%. By using Cr⁴⁺:YAG crystals as saturable absorbers, Q-switching pulse with average output power of 1.28 W, pulse width of 4 ns and repetition rate of 6.2 kHz were obtained. The single-pulse energy and peak power were estimated to be 206 μJ and 51.6 kW, respectively. The conversion efficiency of the output power from cw to Q-switching operation was as high as 84.7%.     

Passively Q-switched laser performance of c-cut Nd:Gd0.63Y0.37VO4 crystal

Passively Q-switched c-cut Nd:Gd_0.63Y_0.37VO₄ laser performance at 1.06 μm was demonstrated with Cr⁴⁺:YAG as saturable absorbers for the first time to our knowledge. This c-cut mixed crystal was found to have large energy storage capacity. The shortest pulse width, largest pulse energy, and highest peak power were obtained to be 6.6 ns, 201.7 μJ, and 30.6 kW, respectively.     

Three-level operation of a diode-bar-pumped Yb:S-FAP laser

We present an all solid-state Yb:S-FAP laser system running on the three-level laser transition at 985 nm. The pump source was a high fill-factor laser diode bar, with the output reformatted using a two-mirror beamshaping system to produce a rectangular pump beam that focused to a square spot. A nearly on-axis multipassing system was used to obtain four pump passes through a 1.6 mm Yb:S-FAP laser crystal. Gain-switched three-level laser output was achieved with an efficiency of 4.3% with respect to incident pump power. Electro-optic Q-switching produced 0.12 mJ pulses for a pump pulse energy of 11 mJ. Intra-cavity second-harmonic generation yielded a maximum pulse energy at 492.5 nm of 12 μJ.     

Self-Q-switching and mode-locking in an all-fiber Er/Yb co-doped fiber ring laser

Using a section of un-pumped Er/Yb co-doped fiber (EYDF) as a saturable absorber, Self-Q-switching and self-mode-locking pulses have been obtained in an all-fiber EYDF ring laser. Such laser is with the self-Q-switched pulse threshold of 135.22 mW, the repetition rate of approximately 22.2 kHz, and the pulse duration of ∼2.8 μs, respectively. The self-mode-locked threshold is 591.8 mW. By incorporating the saturable absorption in an un-pumped EYDF and a Mach-Zehnder interferometer, when the pump power is increased to 1242.9 mW, the continuous-wave (CW) mode-locking with the pulse width of 26 ns has also been demonstrated experimentally for the first time.     

Output and picosecond amplification characteristics of an efficient and high-power discharge excimer laser

Improvements in output pulse energy and efficiency of a conventional capacitor-transfer-type discharge excimer laser with automatic preionization have been achieved by extending the discharge volume and resulting moderate pumping of the active medium. The discharge laser produces a pulse energy of more than 1 J for XeCl, KrF, and ArF lasers in square beams of about 2×2 cm², and the maximum overall efficiency observed is 2.9% for XeCl, 3.2% for KrF and 1.8% for ArF. The laser device has been involved in a picosecond ( 32 ps) XeCl laser amplification system, and was operated as an amplifier at a repetitive frequency of 10 Hz. Saturation fluence for XeCl laser was measured to be 1.4 mJ/cm², and the picosecond pulse energy of 40 mJ was extracted from the amplifier.On leave from Ebara Corp., 6-6-7, Ginza, Chuo-ku, Tokyo 104, JapanOn leave from Mitsubishi Heavy Industries, LTD., 4-6-22, Kan-on shinmachi, Nishi-ku, Hiroshima 733, Japan     

Nd:YAG split-disk laser amplifier for 10 J output energy

A prototype split-disk amplifier consisted of four Nd:YAG ceramics and single crystals was demonstrated with a 3.7 cm square clear aperture. A single-pass small-signal gain of 2.0 and a total stored energy of 11.1 J in the eight YAG disks were obtained. The maximum output energy of 10.4 J with the YAG disk amplifier was achieved in a single-shot operation. A near-field pattern of 31 mm × 31 mm square with super Gaussian shape was measured.     

Double XeCl laser with lateral UV preionization

We present a very compact and very reliable laser system formed of two discharge sections both with lateral UV preionization. The discharge electrodes are contained in a single vessel and form an oscillator-amplifier system. A single spark gap switches on both circuits. By applying a generalized self-filtering unstable resonator to the oscillator and injecting the laser beam into the single pass amplifier, an output beam of 105 mJ, with a brightness of 5.5×10¹³ W cm^–2Sr^–1 has been obtained. Moreover, by applying a pulse-forming network in one discharging circuit, the duration of the discharge breakdown has been increased and output laser pulses of 40 ns FWHM, and 80 ns base width duration (at 10% points) and of energy 100 mJ are obtained.     

Single mode oscillation of TEA CO2 laser with an interference resonator

An effective single-longitudinal mode (SLM) pulse TEA CO₂ laser operation was demonstrated using a Michelson’s type resonator with a tilting Fabry-Perot etalon. A modified numerical model of the interference resonator was investigated for designing the laser. The experimentally measured values were found to have good agreement with the numerical model. A pulse width of about 90 ns and the maximum pulse energy of about 300 mJ were achieved at 10.59 μm in SLM and TEM₀₀ mode. The reliability of producing SLM pulses was 100% and there was no damage on the etalon. By turning the interference resonator, the SLM output was tuned 44 lines of the CO₂ spectrum.     

Widely tunable optical parametric oscillator driven by a pulsed diode-pumped nonlinear-mirror mode-locked Nd:YAG laser

We report on the development of a pulsed diode end-pumped Nd:YAG laser mode-locked by a nonlinear mirror and stabilized by an acousto-optical modulator. With the introduction of appropriate intracavity loss, the laser is able to generate 22.8 ps pulses with the energy of 4.5 μJ. After amplification and frequency doubling stages, the second harmonic radiation is used to non-collinearly synchronously pump a β-barium borate optical parametric oscillator in a walk-off compensated scheme. The system demonstrates a wide-tuning range from 635 nm to 2.55 μm for the signal output, with maximum average conversion efficiency as high as 42%.     

Diode-end-pumped linear-polarized single-frequency Tm:YAG laser at room temperature

By using two solid uncoated etalons, we present a diode-pumped linear-polarized single-frequency Tm:YAG laser operating at 2 μm. Placing one 0.1 mm F-P etalon at nearly Brewster angle in the cavity, the linear-polarization laser is achieved. The other 1 mm F-P etalon was turned in the range of very small angle, single-longitudinal-mode (SLM) could be obtained. The maximum output power of linear-polarized single-frequency laser of 60 mW is achieved at the wavelength of 2013 nm. The degree of the polarization is over 30 dB. Long-term frequency stability was also investigated, with the results of wavelength fluctuation about 2.55 × 10⁻¹³ m within 3 min and frequency change about 18.86 MHz, corresponding to a frequency stability of 1.27 × 10⁻⁷.     

Backside etching of fused silica with Nd:YAG laser

The laser-induced backside etching of fused silica with gallium as highly absorbing backside absorber using pulsed infrared Nd:YAG laser radiation is demonstrated for the first time. The influence of the laser fluence, the pulse number, and the pulse length on the etch rate and the etched surface topography was studied. The comparable high threshold fluences of about 3 and 7 J/cm² for 18 and 73 ns pulses, respectively, are caused by the high reflectivity of the fused silica-gallium interface and the high thermal conductivity of gallium. For the 18 and 73 ns long pulses the etch rate rises almost linearly with the laser fluence and reaches a value of 350 and 300 nm/pulse at a laser fluence of about 12 and 28 J/cm², respectively. Incubation processes are almost absent because etching is already observed with the first laser pulse at all etch conditions and the etch rate is constant up to 30 pulses.The etched grooves are Gaussian-curved and show well-defined edges and a smooth bottom. The roughness measured by interference microscopy was 1.5 nm rms at an etch depth of 0.6 μm. The laser-induced backside etching with gallium is a promising approach for the industrial application of the backside etching technique with IR Nd:YAG laser.     

Q-switched Nd lasers pumped directly into the F3/2 emitting level

The influence of the direct pumping into the ⁴F_3/2 emitting level on the output characteristics of continuous-wave (CW) pumped, passively or actively (acoustooptic, AO) Q-switched Nd lasers is discussed. In case of passive Q-switching by Cr⁴⁺:YAG saturable absorber (SA) crystal, the change of pumping wavelength from 0.81 μm into the highly-absorbing ⁴F_5/2 level to 0.88 μm into the ⁴F_3/2 level of Nd does not modify the energy of the Q-switch pulse, but increases the pulse repetition rate and the laser average power for the same absorbed pump power. This is demonstrated with 0.81 and 0.88 μm CW laser diode-pumped Nd:YAG and Nd-vanadate lasers with average output power in the watt-level range at 1.06 μm. The effect is explained by the control of passive Q-switching by the intracavity photon flux that is influenced by the pump wavelength and by the initial transmission of the SA crystal. On the other hand, it is discussed and experimentally proved that due to the possibility to control externally the frequency of switching, in case of the AO Q-switched Nd laser the change of the pump wavelength from 0.81 to 0.88 μm increases the pulse energy for a fixed frequency, leading to a corresponding increase of the average laser power.