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1.
(In1−xFex)2O3 (x = 0.02, 0.05, 0.2) powders were prepared by a solid state reaction method and a vacuum annealing process. A systematic study was done on the structural and magnetic properties of (In1−xFex)2O3 powders as a function of Fe concentration and annealing temperature. The X-ray diffraction and high-resolution transmission electron microscopy results confirmed that there were not any Fe or Fe oxide secondary phases in vacuum-annealed (In1−xFex)2O3 samples and the Fe element was incorporated into the indium oxide lattice by substituting the position of indium atoms. The X-ray photoelectron spectroscopy revealed that both Fe2+ and Fe3+ ions existed in the samples. Magnetic measurements indicated that all samples were ferromagnetic with the magnetic moment of 0.49-1.73 μB/Fe and the Curie temperature around 783 K. The appearance of ferromagnetism was attributed to the ferromagnetic coupling of Fe2+ and Fe3+ ions via an electron trapped in a bridging oxygen vacancy.  相似文献   

2.
We report on the reversible manipulation of room temperature ferromagnetism in Fe (5%) doped In2O3 polycrystalline magnetic semiconductor. The X-ray diffraction and photoemission measurements confirm that the Fe ions are well incorporated into the lattice, substituting the In3+ ions. The magnetization measurements show that the host In2O3 has a diamagnetic ground state, while it shows weak ferromagnetism at 300 K upon Fe doping. The as-prepared sample was then sequentially annealed in hydrogen, air, vacuum and finally in air. The ferromagnetic signal shoots up by hydrogenation as well as vacuum annealing and bounces back upon re-annealing the samples in air. The sequence of ferromagnetism shows a close inter-relationship with the behavior of oxygen vacancies (Vo). The Fe ions tend to a transform from 3+ to 2+ state during the giant ferromagnetic induction, as revealed by photoemission spectroscopy. A careful characterization of the structure, purity, magnetic, and transport properties confirms that the ferromagnetism is due to neither impurities nor clusters but directly related to the oxygen vacancies. The ferromagnetism can be reversibly controlled by these vacancies while a parallel variation of carrier concentration, as revealed by resistance measurements, appears to be a side effect of the oxygen vacancy variation.  相似文献   

3.
Influence of Co doping for In in In2O3 matrix has been investigated to study the effect on magnetic vs. electronic properties. Rietveld refinement of X-ray diffraction patterns confirmed formation of single phase cubic bixbyite structure without any parasitic phase. Photoelectron spectroscopy and refinement results further revealed that dopant Co2+ ions are well incorporated at the In3+ sites in In2O3 lattice and also ruled out formation of cluster in the doped samples. Magnetization measurements infer that pure In2O3 is diamagnetic and turns to weak ferromagnetic upon Co doping. Hydrogenation further induces a huge ferromagnetism at 300 K that vanishes upon re-heating. Experimental findings confirm the induced ferromagnetism to be intrinsic, and the magnetic moments to be associated with the point defects (oxygen vacancies Vo) or bound magnetic polarons around the dopant ions.  相似文献   

4.
The magnetic phase diagram for Mg1−xZnxCyNi3 has been tentatively constructed based on magnetization and muon spin relaxation (μSR) measurements. The superconducting phase was observed to fade as x (y) increases (decreases). The low y samples show early stages of long-range ferromagnetism, or complete long-range ferromagnetism. In the phase diagram, the ferromagnetic phase exists in addition to the superconducting phase, suggesting that there is some correlation between superconductivity and ferromagnetism, even though the coexistence of ferromagnetism and superconductivity is not observed from the μSR measurements down to 20 mK for the superconducting sample (Tc=2.5 K, (x, y)=(0, 0.9)).  相似文献   

5.
Sn1−xMnxO2 (x=0.01-0.05) thin films were synthesized on quartz substrate using an inexpensive ultrasonic spray pyrolysis technique. The influence of doping concentration and substrate temperature on structural and magnetic properties of Sn1−xMnxO2 thin films was systematically investigated. X-ray diffraction (XRD) studies of these films reflect that the Mn3+ ions have substituted Sn4+ ions without changing the tetragonal rutile structure of pure SnO2. A linear increase in c-axis lattice constant has been observed with corresponding increase in Mn concentration. No impurity phase was detected in XRD patterns even after doping 5 at% of Mn. A systematic change in magnetic behavior from ferromagnetic to paramagnetic was observed with increase in substrate temperature from 500 to 700 °C for Sn1−xMnxO2 (x=0.01) films. Magnetic studies reveal room-temperature ferromagnetism (RTFM) with 3.61×10−4 emu saturation magnetization and 92 Oe coercivity in case of Sn1−xMnxO2 (x=0.01) films deposited at 500 °C. However, paramagnetic behavior was observed for the films deposited at a higher substrate temperature of 700 °C. The presence of room-temperature ferromagnetism in these films was observed to have an intrinsic origin and could be obtained by controlling the substrate temperature and Mn doping concentration.  相似文献   

6.
Microstructure, magnetic and optical properties of polycrystalline Fe-doped ZnO films fabricated by cosputtering with different Fe atomic fractions (xFe) have been examined systematically. Fe addition could affect the growth of ZnO grains and surface morphology of the films. As xFe is larger than 7.0%, ZnFe2O4 grains appear in the films. All the films are ferromagnetic. The ferromagnetism comes from the ferromagnetic interaction activated by defects between the Fe ions that replace Zn ions. The average moment per Fe ion reaches a maximum value of 1.61 μB at xFe = 4.8%. With further increase in xFe, the average moment per Fe ion decreases because the antiferromagnetic energy is lower than the ferromagnetic one due to the reduced distance between the adjacent Fe ions. The optical band gap value decreases from 3.245 to 3.010 eV as xFe increases from 0% to 10%. Photoluminescence spectra analyses indicate that many defects that affect the optical and magnetic properties exist in the films.  相似文献   

7.
Fe-doped (Ba1−xSrx)TiO3 ceramics were prepared by solid-state reaction, and ferromagnetism was realized at room temperature. The microstructure and magnetism were modified by the Sr concentration control (0≤x≤75 at%) at a fixed Fe concentration, and the relevant magnetic exchange mechanism was discussed. All the samples are shown to have a single perovskite structure. When increasing the Sr concentration, the phase structure is transformed from a hexagonal perovskite into a cubic perovskite, with a monotonic decrease in lattice parameters induced by ionic size effect. The room-temperature ferromagnetism is expected to originate from the super-exchange interactions between Fe3+ on pentahedral and octahedral Ti sites mediated by the O2− ions. The increase in Sr addition modifies two main influencing factors in magnetic properties: the ratio of pentahedral to octahedral Fe3+ and the concentration of oxygen vacancies, leading to a gradually enhanced saturation magnetization. The highest value, obtained for Fe-doped (Ba0.25Sr0.75)TiO3, is an order of magnitude higher than that of the Fe-doped BaTiO3 system with similar Fe concentration and preparation conditions, which may indicate (Ba1−xSrx)TiO3 as a more suitable matrix material for multiferroic research.  相似文献   

8.
The magnetic properties and the Griffiths singularity were investigated in Mn-site doped manganites of La0.45Sr0.55Mn1−xCoxO3 (x=0, 0.05, 0.10 and 0.15) in this work. The parent sample La0.45Sr0.55MnO3 undergoes a paramagnetic-ferromagnetic transition at TC=290 K and a ferromagnetic-antiferromagnetic transition at TN=191 K. The doping of Co ions enhances the ferromagnetism and suppresses the antiferromagnetism. The enhanced ferromagnetism results from the fact that the Co doping enhances the Mn3+-Mn4+ double-exchange interaction and induces the Co2+-Mn4+ ferromagnetic superexchange interaction. Detailed investigation on the magnetic behavior above TC exhibits that the Griffiths singularity takes place in this series of Mn-site doped compounds. The correlated disorder induced by the Co ionic doping, together with the phase competition from the ferromagnetic and the antiferromagnetic interactions among Mn ions, is responsible for the Griffiths singularity.  相似文献   

9.
We synthesized the Mn-doped Mg(In2−xMnx)O4 oxides with 0.03?x?0.55 using a solid-state reaction method. The X-ray diffraction patterns of the samples were in a good agreement with that of a distorted orthorhombic spinel phase. Their lattice parameters and unit-cell volumes decrease with x due to the substitution of the smaller Mn3+ ions to the larger In3+ ions. The undoped MgIn2O4 oxide presents diamagnetic signals for 5 K?T?300 K. The M(H) at T=300 K reveals a fairly negative-sloped linear relationship. Neither magnetic hysteresis nor saturation behavior was observed in this parent sample. For the Mn-doped samples, however, positive magnetization were observed between 5 and 300 K even if the x value is as low as 0.03. The mass susceptibility enhances with Mn content and it reaches the highest value of 1.4×10−3 emu/g Oe (at T=300 K) at x=0.45. Furthermore, the Mn-doped oxides with x=0.06 and 0.2, respectively, exhibit nonlinear magnetization curves and small hysteretic loops in low magnetic fields. Susceptibilities of the Mn-doped samples are much higher than those of MnO2, Mn2O3 oxides, and Mn metals. These results show that the oxides have potential to be magnetic semiconductors.  相似文献   

10.
Sn1 − xKxO2 nanocrystalline powders were synthesized by the sol-gel method. The room-temperature ferromagnetism was observed in K-doped samples, and the saturation magnetization increases with the K concentration. It indicates the ferromagnetism induced by holes injecting is possible. First-principles calculations were employed to analyze the effect of defects on the structural and magnetic properties. Taking into account the structural and valence state characterization, the inhomogeneous distribution of dopants and the holes compensation effect of K and H interstitials in crystal were thought to play important roles in reducing the magnetic moments in samples.  相似文献   

11.
Magnetocaloric effect (MCE) in fine-grained perovskite manganites of the type La0.67Ba0.33Mn1−xSnxO3 (x=0.05, 0.1 and 0.15) were prepared by the solid-state method. The prepared samples remain single phase and exhibit paramagnetic to ferromagnetic phase transition (TC) at 340, 325 and 288 K for x=0.05, 0.1 and 0.15, respectively. From the measured magnetization data of La0.67Ba0.33Mn1−xSnxO3 compounds as a function of field (2 T), the associated magnetic entropy change close to their respective Curie temperatures and the relative cooling power (RCP) have been determined. Large MCE has been obtained in all samples and |ΔSM|max reached the highest value of 2.49 J/kg K at TC (288 K) for the sample x=0.15, with H=2 T.  相似文献   

12.
(Tl0.5Pb0.5)Sr2Ca(Cu2−xMx)O7 (M=Co, Ni and Zn) have been synthesized and investigated by means of X-ray diffraction, scanning electron microscope, electrical resistivity and magnetic susceptibility measurements. X-ray diffraction patterns show that all studied samples contain the nearly single ‘1212’ phase. They crystallize in a tetragonal unit cell with a=3.8028-3.8040 Å and c=12.0748-12.1558 Å. In (Tl0.5Pb0.5)Sr2Ca(Cu2−xMx)O7 system (M=Co or Ni), the superconducting critical temperature Tc decreases linearly with both Co and Ni concentrations and the rate of Tc decrease is around −6.5 and −7.0 K/at%, respectively. For (Tl0.5Pb0.5)Sr2Ca (Cu2−xZnx)O7 system, the dependence of Tc on the Zn dopant concentration deviates from a linear behavior and the Zn substitution suppresses Tc much less (−2.5 K/at%) than the Co and Ni substitutions. The suppression in Tc in Co and Ni doped samples are attributed to the magnetic pair-breaking mechanism and the reduction in the carrier concentration. The suppression of Tc in Zn doped samples is not caused by the reduction in carrier concentration which should remain constant, but rather due to nonmagnetic pair-breaking mechanism induced by disorder as well as the filling of the local Cu dx2y2 state due to the full d band of Zn ions.  相似文献   

13.
Ba(Ti1−xFex)O3 ceramics (x=7, 30 and 70 at%) were prepared by solid-state reaction. All samples are single-phase with 6H-BaTiO3-type hexagonal perovskite structure. Mössbauer spectra show all Fe atoms to be present as Fe3+ in BaTiO3 lattice, occupying M1 octahedral and pentahedral sites. Room-temperature ferromagnetism is exhibited and saturation magnetization gradually decreases with increasing Fe content. The observed ferromagnetism is considered to be an intrinsic property of Ba(Ti1−xFex)O3, originating from super-exchange interactions between Fe3+ in different occupational sites associated with oxygen vacancies. The variation in magnetization with Fe content is related to the ratio of pentahedral to octahedral sites and oxygen vacancies.  相似文献   

14.
In view of recent controversies on above room-temperature ferromagnetism (RTFM) in transition-metal-doped ZnO, the present paper aims to shed some light on the origin of ferromagnetism by investigating annealing effects on structure and magnetism for polycrystalline Zn1−xMnxO powder samples prepared by solid-state reaction method and annealed in air at different temperatures. Magnetic measurements indicate that the samples are ferromagnetic at room temperature (RTFM). Room temperature ferromagnetism has been observed in the sample annealed at a low temperature of 500 °C with a saturated magnetization (Ms) of 0.159 emu/g and a coercive force of 89 Oe. A reduction in RTFM is clearly observed in the sample annealed at 600 °C. Furthermore, the saturation magnetic moment decreases with an increase in grain size, suggesting that ferromagnetism is due to defects and/or oxygen vacancy confined to the surface of the grains. The experimental results indicate that the ferromagnetism observed in Zn1−xMnxO samples is intrinsic rather than associated with secondary phases.  相似文献   

15.
《Current Applied Physics》2018,18(2):150-154
The electronic structure and magnetic properties of polycrystalline BaTi1-xMnxO3 (x = 0–0.1) compounds prepared by solid-state reactions were studied. The results revealed that the increase in Mn content (x) did not change the oxidation numbers of Ba (+2) and Ti (+4) in BaTi1-xMnxO3. However, there is the change in Mn valence that Mn3+,4+ ions coexist in the samples with x = 0.01–0.04 while Mn4+ ions are almost dominant in the samples with x = 0.06–0.1. We also point out that Mn3+ and Mn4+ ions substitute for Ti4+ and prefer locating in the tetragonal and hexagonal BaTiO3 structures, respectively, in which the hexagonal phase constitutes soon as x = 0.01. Particularly, all the samples exhibit room-temperature ferromagnetism. Ferromagnetic order increases with increasing x from 0 to 0.02, but decreases as x ≥ 0.04. We think that ferromagnetism in BaTi1-xMnxO3 is related to lattice defects and/or exchange interactions between Mn3+ and Mn4+ ions.  相似文献   

16.
We have studied the effect of Fe substitution on magnetic and magnetocaloric properties in La0.7Sr0.3Mn1−xFexO3 (x=0.05, 0.07, 0.10, 0.15, and 0.20) over a wide temperature range (T=10-400 K). It is shown that substitution by Fe gradually decreases the ferromagnetic Curie temperature (TC) and saturation magnetization up to x=0.15 but a dramatic change occurs for x=0.2. The x=0.2 sample can be considered as a phase separated compound in which both short-range ordered ferromagnetic and antiferromagnetic phases coexist. The magnetic entropy change (−ΔSm) was estimated from isothermal magnetization curves and it decreases with increase of Fe content from 4.4 J kg−1 K−1 at 343 K (x=0.05) to 1.3 J kg−1 K−1 at 105 K (x=0.2), under ΔH=5 T. The La0.7Sr0.3Mn0.93Fe0.07O3 sample shows negligible hysteresis loss, operating temperature range over 60 K around room temperature with refrigerant capacity of 225 J kg−1, and magnetic entropy of 4 J kg−1 K−1 which will be an interesting compound for application in room temperature refrigeration.  相似文献   

17.
In this paper, we have investigated Mn-doped SnO2 powder samples prepared by solid-state reaction method. X-ray diffraction showed a single phase polycrystalline rutile structure. The atomic content of Mn ranged from ∼0.8 to 5 at%. Room temperature M-H loops showed a ferromagnetic behavior for all samples. The ferromagnetic Sn0.987Mn0.013O2 showed a coercivity Hc=545 Oe, which is among the highest reported for dilute magnetic semiconductors. The magnetic moment per Mn atom was estimated to be about 2.54 μB of the Sn0.9921Mn0.0079O2 sample. The average magnetic moment per Mn atom sharply decreases with increasing Mn content, while the effective fraction of the Mn ions contributing to the magnetization decreases. The magnetic properties of the Sn1−xMnxO2 are discussed based on the competition between the antiferromagnetic superexchange coupling and the F-center exchange coupling mechanism, in which both oxygen vacancies and magnetic ions are involved.  相似文献   

18.
The crystal structure and electromagnetic properties as well as thermal stability of the A-site ordered PrBaMn2O6 manganites have been investigated. These samples have been prepared by using ‘two-steps’ synthesis mode. They have tetragonal structure with no tilt of MnO6 octahedra and show ferromagnetic metal to paramagnetic semiconductor transition. The most significant structural feature of the A-site ordered manganites is that the MnO2 sublattice is sandwiched by two types of rock-salt layers PrO and BaO. The different degree of Pr and Ba ions in the A-sublattice is revealed. The A-site ordered PrBaMn2O6 sample with maximum degree of the A-site order demonstrates ferromagnetic metallic to paramagnetic insulating transition with the Curie point ∼320 K. The A-site disordered Pr0.50Ba0.50MnO3 sample is ferromagnetic metal below TC≈140 K. The cation order in these compounds is stable in air up to 1300 °C. For the partly A-site ordered samples the magnetic and electronic phase separation is observed. The magnetotransport properties of the A-site ordered manganites treated under different conditions are discussed in terms of the superexchange interactions and A-site order degree.  相似文献   

19.
Mn-doped GaN films (Ga1−xMnxN) were grown on sapphire (0 0 0 1) using Laser assisted Molecular Beam Epitaxy (LMBE). High-quality nanocrystalline Ga1−xMnxN films with different Mn concentration were then obtained by thermal annealing treatment for 30 min in the ammonia atmosphere. Mn ions were incorporated into the wurtzite structure of the host lattice by substituting the Ga sites with Mn3+ due to the thermal treatment. Mn3+, which is confirmed by XPS analysis, is believed to be the decisive factor in the origin of room-temperature ferromagnetism. The better room-temperature ferromagnetism is given with the higher Mn3+ concentration. The bound magnetic polarons (BMP) theory can be used to prove our room-temperature ferromagnetic properties. The film with the maximum concentration of Mn3+ presents strongest ferromagnetic signal at annealing temperature 950 °C. Higher annealing temperature (such as 1150 °C) is not proper because of the second phase MnxGay formation.  相似文献   

20.
Mn1−xFexIn2Se4 compounds (x=0.1; x=0.7) were grown by the chemical vapor transport method. X-ray diffraction analysis data show that these compositions crystallize as different polytypes that belong to the hexagonal structure. The crystal symmetry of the sample with x=0.1 belongs to the space group Rm and for the sample with x=0.7 the space group is P63mc.The magnetic behavior of both samples has been investigated in the temperature range between 5 and 300 K. Spin-glass-like behavior below the freezing temperature Tf=9 K has been found for the sample with x=0.7. The sample with Fe content x=0.1 behaves as a paramagnet down to the lowest experimental measured temperature. High-temperature susceptibility data follow the Curie-Weiss law with a negative paramagnetic temperature indicating predominant antiferromagnetic interactions.Optical studies reveal that both samples (x=0.1; 0.7) are direct band gap semiconductors. The temperature dependence of the energy gap fits Varshni relation quite well.  相似文献   

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