双光子吸收的Franz-Keldysh效应

从实验上证实Hg_0.695Cd_0.305Te 光电二极管空间电荷区中存在双光子吸收的Franz-Keldysh效应.利用一个皮秒Nd:YAG激光器抽运的光学参量产生器和差频产生器作为激发光源,测量了入射波长为λ₀=7.92μm的脉冲激光所激发的光响应随入射光强的变化关系.脉冲光响应峰值强度随入射光强的增大呈现二次幂函数增强趋势.采用等效RC电路模型将脉冲光伏信号峰值与入射光强相关联,得到空间电荷区中强电场下单光束 关键词： Franz-Keldysh效应 碲镉汞 双光子吸收 脉冲光伏信号     

双光子吸收的Franz-Keldysh效应

从实验上证实Hg_0.695Cd_0.305Te 光电二极管空间电荷区中存在双光子吸收的Franz-Keldysh效应.利用一个皮秒Nd:YAG激光器抽运的光学参量产生器和差频产生器作为激发光源，测量了入射波长为λ₀=7.92μm的脉冲激光所激发的光响应随入射光强的变化关系.脉冲光响应峰值强度随入射光强的增大呈现二次幂函数增强趋势.采用等效RC电路模型将脉冲光伏信号峰值与入射光强相关联，得到空间电荷区中强电场下单光束     

用蓝色光二极管测量掺钛蓝宝石飞秒激光脉冲宽度

用蓝色光二极管双光子跃迁光电流信号测量掺钛蓝玉石飞秒激光脉冲宽度，实验高精度地记录了二阶干涉自相关曲线及其精细结构，由于用蓝色二极管双光子跃迁代替了常用的二次谐波，而且光信号直接转化为电信号，从而使飞秒激光脉冲宽度的测量大为简化。     

硅光电二极管光谱响应度的分析

从光电二极管的工作原理出发,对硅光电二极管的光谱响应度进行了论述.分析表明,入射光子的能量、材料的禁带宽度和吸收系数是光谱响应曲线具有波长选择性的主要原因.     

空气簇射切伦科夫光观测

用快、慢光电倍增管分别构成两种探测装置,记录了广延空气簇射(EAS)切伦科夫(C)光的脉冲形状和光强.测量了海平面EAS(能量E₀>5×10¹⁴eV)C光脉冲的半高全宽(FWHM)分布和光子密度谱.两种光强探测结果的比较表明:由GDB100慢光电倍增管和峰值ADC组成的光强测量系统,对于测定EAS C光的光强是一种简单和经济的好方法.     

超二代像增强器多碱阴极光电发射特性研究

通过测量超二代像增强器多碱阴极的光谱反射率和透射率,根据能量守恒定律计算得到了多碱阴极的光谱吸收率.结果表明,只有当光子的能量大于1.333 eV以后,多碱阴极的吸收率才开始快速增大.这说明多碱阴极的光谱吸收存在一个1.333 eV的长波吸收限,入射光的光子能量如果小于该吸收限,多碱阴极将不吸收.在多碱阴极的表面电子亲合势进一步降低的情况下,多碱阴极光电发射的长波理论阈值由长波吸收限所决定.多碱阴极在吸收光子之后的电子跃迁过程中,跃迁电子的能量增加小于所吸收入射光子的能量,即存在一个"能量损失".光子的能量越高,所激发的跃迁电子所处的能级越高,能量损失越大.同时光子的能量越高,跃迁电子所处的能级越高,电子跃迁的几率越低.多碱阴极的量子效率由吸收率、跃迁几率和跃迁能级、扩散过程中的能量损失等因素共同决定,因此多碱阴极的量子效率存在长波阈的同时也存在短波阈.多碱阴极的量子效率在2.11 eV达到最大值之后,随着光子能量的增加而单调减小,在3.6 eV时,量子效率减小到零.多碱阴极在3.6 eV时的吸收系数仍然很高,但由于电子跃迁的几率低,同时电子扩散过程中的能量损失大,导致尽管多碱阴极对短波具有较高的吸收系数,但量子效率仍然较低.因此对多碱阴极所吸收的光子能量中,转换成为光电导、晶格热振动等其他非光电发射形式能量的比例而言,短波较长波高,对光电发射的贡献率而言,短波较长波低.     

光伏半导体器件对能量小于禁带宽度光子的响应机理研究

利用光子能量为0.12 eV的10.6 μm连续激光分别辐照了禁带宽度为0.91和0.33 eV的光伏碲镉汞探测器. 实验表明,激光辐照下禁带宽度为0.91 eV的探测器输出正电压,而禁带宽度为0.33 eV的探测器对激光的响应方向却与之相反. 为了研究此现象,利用功率密度一定的10.6 μm激光辐照不同开路电压状态下禁带宽度为0.91 eV的探测器,实验结果证实初始开路电压是产生输出电压反向现象的原因. 对这一机理进一步分析发现,光伏探测器在光子能量小于禁带宽度的激光辐照下,其开路电压是热激发载流子导致的热生电动势和自由载流子吸收导致的晶格热效应共同决定的. 关键词： 能量小于禁带宽度的光子 光伏碲镉汞探测器 热生电动势 晶格热效应     

飞秒激光脉冲诱导透明介质的非线性吸收和折射率改变轮廓研究

实验研究了飞秒激光脉冲诱导熔融石英的非线性吸收特性,利用激光诱导自由电子等离子体浓度取决于多光子吸收系数和入射光强的关系;数值模拟了激光诱导折射率变化区域的大小,结合非线性吸收机理和飞秒激光脉冲与介质的相互作用,解释了飞秒激光脉冲超精细加工不受衍射极限的约束,可实现纳米级加工的机理结果表明,电介质的电离能越大,飞秒脉冲诱导的折射率变化区域就越小,但要求的激光脉冲能量也越大;为飞秒激光脉冲超精细加工的材料和激光参量选择提供了理论依据.     

强光场下非共振双光子跃迁相干控制

利用飞秒激光脉冲相位整形技术,从理论和实验两方面,对强激光场下分子体系苝溶液中非共振双光子跃迁的相干控制进行了研究。通过对飞秒激光脉冲进行相位扫描和余弦相位调制,发现分子体系中非共振双光子的跃迁几率能够被削弱,但不能完全消除。分子体系中非共振双光子跃迁的相干控制受到激光光场的形状和分子吸收谱谱宽的影响;与原子体系相比,分子体系中非共振双光子跃迁相干控制的调制效率降低。     

弛豫型铁电晶体0.92PZN-0.08PT的光吸收特性

本文研究了0．92PZN－0．08PT晶体的紫外－可见－近红外透过光谱，确定了它的吸收边波长为380nm,计算出该晶体在此波段的吸收系数，拟出了吸收系数与光子能量的关系曲线，由吸收系数的平方根与光子能量的曲线揭示出电子吸收光子能量后从价带到导带的跃迁是有声子吸收和发射的间接带隙跃迁。     

Multiphoton generation of electron-hole pairs involving free carriers in an indirect-gap crystal

The paper reports on a study of nonlinear absorption of high-intensity laser radiation in the case where the photon energy is less than one half of the indirect-gap width in a crystal. The deficiency in the energy needed for two-photon excitation of the electron-hole pair is made up by the kinetic energy of free electrons, which was acquired in intraband nonlinear absorption of light. The probabilities of Auger-type indirect two-photon interband transitions involving free electrons have been calculated by perturbation theory. It is shown that, for a free-carrier concentration in the conduction band n _c ? 10¹⁵ cm^?3, and the radiation intensity range of interest for the experiment, j ～ 3–10 GW/cm², the calculated probabilities of such transitions exceed by several orders of magnitude those of “conventional” direct and indirect (involving phonons) multiphoton transitions which can take place in the system considered.     

Shift photocurrent induced by two-quantum transitions

A theory of the shift current induced by direct two-photon and indirect one-photon absorption is developed for noncentrosymmetric crystals. A formula is derived for the microscopic shifts of Bloch electrons induced by two-quantum processes. It is shown that the ratio of the two-photon photocurrent at the photon frequency ω to the photocurrent induced by direct one-photon transitions at the photon frequency 2ω, as compared to the corresponding absorption-rate ratio, contains a large factor {ie152-1}ω/(2{ie152-2}ω − E _g), where E _g is the bandgap; i.e., these photocurrent can be comparable in order of magnitude. For crystals of T _d symmetry, the photocurrents induced by one- and two-photon absorption are compared in terms of polarization dependence.     

Optical properties and interband transitions in the layered compounds SbI3

The optical constants of SbI₃ single crystals, prepared from solution, were calculated from normal incidence reflectance data via a Kramers-Kronig analysis. The dependence of the absorption coefficient on the photon energy suggests the presence of a direct allowed interband transition whereE _g ^d =2·225 eV at room temperature, as well as indirect phonon-assisted transition. The absorption coefficient follows Urbach's empirical relation in the range 2·08–2·34 eV near the intrinsic edge, and a Gaussian shape was obtained near the band maximum. This behaviour is indicative of its excitonic origin and may be contributed to localized excitons in the crystal.     

Dependence of the fundamental absorption edge of CdInGaS4 on hydrostatic pressure

The optical absorption of CdInGaS₄ single crystals has been measured over a hydrostatic pressure range up to 40 kbar in the 2.0–3.0 eV photon energy range at room temperature. The interband gap for the indirect allowed transition was found to have a pressure coefficient, dEg/dP, of +6.4 × 10^-6ev/bar.     

Ellipsometric characterization of PbI2 thin film on glass

The optical properties of polycrystalline lead iodide thin film grown on Corning glass substrate have been investigated by spectroscopic ellipsometry. A structural model is proposed to account for the optical constants of the film and its thickness. The optical properties of the PbI₂ layer were modeled using a modified Cauchy dispersion formula. The optical band gap E_g has been calculated based on the absorption coefficient (α) data above the band edge and from the incident photon energy at the maximum index of refraction. The band gap was also measured directly from the plot of the first derivative of the experimental transmission data with respect to the light wavelength around the transition band edge. The band gap was found to be in the range of 2.385±0.010 eV which agrees with the reported experimental values. Urbach's energy tail was observed in the absorption trend below the band edge and was found to be related to Urbach's energy of 0.08 eV.     

Nonlinear optical properties in SrTiO3 thin films by pulsed laser deposition

Well-crystallized 250 nm-thick SrTiO₃ thin films on fused-quartz substrate were prepared by pulsed laser deposition. The band-gap of SrTiO₃ thin film by transmittance spectra is equal to 3.50 eV, larger than 3.22 eV for the bulk crystal. The nonlinear optical properties of the films were examined with picosecond pulses at 1.064 μm excitation. A large two-photon absorption (TPA) with absorption coefficient of 87.7 cm/GW was obtained, larger than 51.7 cm/GW for BaTiO₃ thin films. The nonlinear refractive index n₂ is equal to 5.7×10⁻¹⁰ esu with a negative sign, larger than 0.267×10⁻¹¹ esu for bulk SrTiO₃. The large TPA is attributed to intermediate energy levels introduced by the grain boundaries, and the optical limiting behaviors stemming from both TPA and negative nonlinear refraction were also discussed.     

Quantitative investigation of the two-photon absorption of Ruby-laser-light in various semiconductors

With aQ-switched Ruby-laser (h v _L =1.785 eV), the two-photon absorption (TPA) coefficient of various semiconductors is determined. The gap energy,E _g , of these substances is lying in the range ofh v _L <E _g <2hv _L . For all measurements the same experimental setup is used, and for the evolution of the data the real, time-dependent intensity of the laser pulse is taken. Thus, the existing discrepancies between the TPA-coefficients as determined by various authors with different experimental techniques can be settled.     

Resonant diffraction in stishovite near the <Emphasis Type="Italic">K</Emphasis> absorption edge of silicon

The X-ray resonant diffraction in a stishovite crystal near the K absorption edge of silicon (E _K = 1839 eV) is studied theoretically. For such a long wavelength, the only possible Bragg reflection is the 100 reflection, which is forbidden by the space group of the crystal. It can be excited solely due to anisotropy of the X-ray scattering amplitude. The crystal symmetry is used to determine the polarization and azimuthal dependence of the reflection intensity. Since this reflection is single, it can be detected upon diffraction from a powder, which substantially widens the possibilities of investigations. The numerical calculations of the energy dependences of the forbidden reflection intensity and the absorption coefficient demonstrate that the dipole-quadrupole, quadrupole-quadrupole, and dipole-octupole contributions to the resonant diffraction and absorption are small and that the dipole-dipole contribution is the most important one.     

Optical absorption in layered MnGaInS<Subscript>4</Subscript> single crystals

Optical absorption in MnGaInS₄ single crystals has been studied. Direct and indirect optical transitions are found to occur in the range of photon energies of 2.37–2.74 eV and in the temperature range of 83–270 K. The temperature dependence of the band gap has been determined; its temperature coefficients E _gd and E _gi are −5.06 × 10⁻⁴ and −5.35 × 10⁻⁴ eV/K, respectively. MnGaInS4 single crystals exhibit anisotropy in polarized light at the absorption edge; the nature of this anisotropy is explained.