“强光一号”Al丝阵Z箍缩产生K层辐射实验研究

在“强光一号”加速器开展了Al丝阵Z箍缩产生K层辐射的实验研究,固定Al丝线径20 μm、丝阵直径12 mm,丝根数为8和12的负载获得K层产额分别为0.9 kJ/cm和1.1 kJ/cm,明显高于16和24根丝负载.辐射功率波形和时间分辨的X射线图像显示,低丝数负载存在拖尾质量引起的多次内爆现象.在60%—80%的内爆时间内,丝阵几乎停留在初始位置;主体内爆在随后的25—30 ns内完成,将部分等离子体留在初始位置,形成质量的拖尾分布;内爆后期驱动电流向外围的拖尾质量迁移,引 关键词： Al丝阵 Z箍缩 K层辐射')" href="#">K层辐射 拖尾质量     

单壳层喷气Z箍缩内爆特性分析

在“阳”加速器（电流峰值为500—850 kA,上升时间约为85 ns）上利用单壳层喷气负载开展了Z箍缩等离子体内爆实验,获得了等离子体的辐射产额、X光辐射图像等诊断结果.利用相应的诊断结果,定义了内爆时间,对内爆过程的主要阶段进行了划分,研究了等离子体位形、辐射强度分布等实验现象,同时对等离子体的内爆轨迹、内爆质量、径向收缩比、磁流体不稳定性等进行了初步分析. 关键词： Z箍缩')" href="#">喷气负载Z箍缩 等离子体内爆 X光辐射功率 “阳”加速器     

“碰撞-辐射”模型在Z箍缩等离子体K壳层线辐射谱分析中的应用

介绍了由K壳层谱线强度比估算等离子体状态参数的"碰撞-辐射"模型的基本原理.详细描述了自行研制的基于该模型的Z箍缩等离子体K壳层线辐射谱分析程序——ZSPEC的基本情况.给出了氖等离子体的计算结果,包括不同电离态离子的相对含量随电子温度的变化曲线和K壳层谱线强度比在"电子密度-电子温度"平面内的等高线分布图.该程序已在"阳"加速器Z箍缩实验结果分析中得到应用,将椭圆晶体谱仪测得的氖等离子体K壳层谱线强度比与ZSPEC程序计算结果相比较,得出在该发实验 关键词： 碰撞-辐射模型 K壳层线辐射谱')" href="#">K壳层线辐射谱 氖气喷气Z箍缩 阳加速器     

基于聚龙一号的钨丝阵Z箍缩内爆辐射特性

介绍了基于聚龙一号装置的Z箍缩诊断和实验布局, 分析了丝数132~300、丝直径5~10 m、丝阵直径13~30 mm的单/双层钨丝阵Z箍缩内爆动力学过程和软X射线辐射特性规律。研究表明, 钨丝阵等离子体的停滞时间与零维薄壳模型计算的停滞时间一致, 内爆轨迹存在偏离, 丝阵等离子体内爆开始前以丝烧蚀为主, 内爆开始时间约为总内爆时间的67%;随着负载质量和半径的增大, 负载电流、内爆停滞时间和X射线辐射脉冲半高宽也相应增加, X射线辐射峰值功率减小。双层钨丝阵的内爆均匀性和一致性优于单层丝阵, 其辐射峰值功率明显高于单层钨丝阵, 但单/双层钨丝阵辐射产额基本相当, 能量转换效率约为15%。此外, 还初步讨论了单层钨丝阵驱动的低密度泡沫动态黑腔辐射功率波形特征及其与纯钨丝阵内爆辐射的差异。     

Z箍缩内爆产生的电磁脉冲辐射

讨论了Z箍缩内爆产生的低频电磁脉冲的辐射特性. Z箍缩驱动金属丝阵或固体套筒高速内爆,部分磁能通过与负载的运动耦合而向外辐射. 理论结果表明,电磁脉冲辐射功率由电流和内爆轨迹共同决定. 在中国工程物理研究院流体物理研究所的初级实验平台上开展了负载电流为7 MA,10%–90%上升时间65 ns的丝阵Z箍缩实验,根据实验测得的电流和内爆轨迹得到了电磁脉冲的辐射功率和频谱. 电磁脉冲峰值功率约为1 GW,能量约为0.5 J,能量转换效率约为10^-7;峰值频率位于20–70 MHz,具有较宽的辐射频谱. 电磁脉冲辐射参数远小于软X射线辐射参数（峰值功率为50 TW,能量为0.5 MJ）. 在弱相对论条件下,电磁脉冲辐射功率近似地正比于电流的6次方,随电流急剧增大. 软X射线辐射是丝阵Z箍缩过程中的主要能量转换形式,本文的研究结论表明,在更高的驱动电流下,电磁脉冲辐射将提供另一种重要的能量转换途径,势必会对诊断设备造成严重影响;此外,这类强电磁脉冲在其他领域也具有潜在的应用价值. 关键词： Z箍缩 内爆 电磁脉冲     

Z箍缩内爆等离子体双层丝阵负载设计的物理分析

实验证实双层金属丝阵负载Z箍缩内爆等离子体产生的X光辐射源,与单层丝阵负载相比可以提高40%的功率。为了优化Z装置上双层丝阵负载实验方案的设计,从内爆动力学过程和Rayle igh-Taylor(RT)不稳定性发展过程进行了理论分析。分析表明:双层丝阵负载实验不会提高X光辐射的总能量,但可以明显地提高辐射功率;双层丝阵的外半径应与单层丝阵负载优化方案的半径相一致;双层丝阵内、外层质量的选取应以优化的单层丝阵内爆到心时间为标准;内层丝阵置于外层丝阵半径的正中位置上,更有利于抑制RT不稳定性。     

强光一号兆安电流钨丝X箍缩实验研究

为了获得更高亮度的X射线点源,在"强光一号"装置上开展钨丝X箍缩实验研究.基于能量平衡方程,估算了1 MA电流热斑等离子体平衡半径为1—10μm.实验中,测试钨丝直径为25—100μm,丝根数为2—48,负载线质量为0.18—6.9 mg/cm;负载电流峰值为1—1.4 MA,10%—90%前沿为60—70 ns."强光一号"装置上匹配的X箍缩负载为30或32根25μm钨丝X箍缩,这种负载一定概率产生单个脉冲X射线辐射,辐射时刻位于电流峰值附近,典型参数为keV X射线脉宽1 ns,辐射功率35 GW,产额40 J,热斑尺寸～30μm.然而,兆安电流X箍缩通常产生多个热斑及多个脉冲X射线辐射.keV能段首个脉冲X射线辐射时刻与负载线质量正相关,并受到负载丝直径的影响.多个X射线脉冲可能由二次箍缩和局部箍缩产生,多个热斑可能由交叉点处微Z箍缩的长波长扰动和短波长扰动引起.与百千安电流X箍缩相比,兆安电流X箍缩热斑亮度更高,但X射线辐射脉冲的单一稳定性还有待于进一步改善.     

喷气Z箍缩内爆动力学过程的数值模拟研究

在分析了喷气Z箍缩内爆等离子体物理过程的基础上，作了必要的假定和简化，给出了物理模型和相应的数学方程组.研制了一维三温辐射磁流体动力学的数值模拟程序，对氖喷气Z箍缩内爆产生高温高密度等离子体过程进行了总体数值模拟，得到了等离子体各参量在内爆过程中的时空分布，再现了该内爆动力学整体过程，并与GAMBLE-Ⅱ装置的实验结果进行了比较.计算结果表明，在对热传导系数和等离子体电阻率作适当调整后，得到的计算结果是自洽的，其中内爆到心时刻、x射线辐射脉冲的脉宽和总能量等宏观量与实验结果比较接近.同时对喷气Z箍缩内爆过 关键词： 喷气Z箍缩 x射线辐射 辐射磁流体动力学     

5 MA 100 ns重频LTD驱动器设计

设计了用于Z箍缩丝阵实验的重频LTD驱动器, 含6路并联模组, 每组由8个0.8 MA原型模块串联组成, 全真空结构。原型模块采用全新的单路触发和电感隔离技术, 触发难度和重频运行可靠性得到显著优化。利用电路模拟程序对驱动器进行了仿真计算, 结果表明:在初始半径1.2 cm、线质量1 mg/cm的Z箍缩负载上, 驱动器的输出电流峰值可到5.2 MA, 前沿91 ns;负载内爆最大动能78 kJ, 从电容储能至负载动能的转化效率为11.7%。该驱动器预期将获得高达20%~30%的辐射能量效率, 可为Z箍缩物理研究提供高效的实验平台。     

1—4 MA电流驱动的丝阵X光辐射优化的实验研究

进行了1—4MA电流驱动的钨丝阵列负载的Z箍缩实验研究,通过丝阵参数、负载电极结构的优化设计及负载初始装配状态的控制优化X光辐射功率,在单、双层丝阵的内爆实验中分别获得5.3±1.0 TW和5.6±1.1 TW的峰值辐射功率,创同类装置上X光辐射功率的最高纪录. 关键词： Z箍缩')" href="#">Z箍缩 丝阵X光辐射 优化     

Untersuchung derK-Strahlung beim Elektroneneinfang des Ge71 mit einem Diffraktionsspektrometer mit gebogenem Kristall

The intensity of satellites in the Gallium-x-rays emitted inK-capture of Ge⁷¹ has been measured and found to be (1,3±0,5)×10^?4 perK-capture. A curved-crystal X-ray spectrometer with a radius of curvature of 27 cm was used for the measurement. The satellites are found to be due to double ionisation ofK-shell accompanyingK-capture as described by the theory ofPrimakoff andPorter. The theoretically calculated intensity of X-ray satellites emitted due to double ionisation ofK-shell — (0,9)×10^?4 perK-capture — is in fair agreement with experiment.     

Perturbative role in the inelastic electron scattering from <Superscript>29</Superscript>Si

Inelastic electron scattering form factors away from the closed sd -shell are investigated. This investigation covers the low-lying states in ²⁹Si , which is considered according to the many-particle configuration mixing shell model as the ¹⁶O core, plus thirteen nucleons distributed over the entire sd -shell orbits. The investigation concentrates on the perturbative role of the core, which is called core polarization effects, on the inelastic electron scattering form factors. Core polarization effects are taken into consideration through the excitation of nucleons from 1s and 1p core orbits, and also from the 2s -1d valence orbits into higher shells, with 2ℏω excitations. Core polarization matrix elements are calculated with the M3Y effective interaction. For the sd -shell model space, a new Hamiltonian, based on a renormalized G -matrix, USDB, is used. All calculations are performed without adjusting any parameters.     

Al等离子体类锂伴线的布居机制分析及实验应用

基于K壳层稳态碰撞辐射模型的程序,详细分析Al等离子体类锂伴线的主要布居机制,分别给出1s2p^{2 2}P-1s²2p²P,1s2s2p(¹S)²P-1s²2s²S与1s2p^{2 2}D-1s²2p² 关键词： 碰撞辐射模型 类锂伴线 线强比 激光等离子体     

Dirac-Hartree-Fock studies of X-ray transitions in meitnerium

The K -shell and L -shell ionizations potentials for ²⁶⁸ ₁₀₉Mt were calculated at the Dirac-Hartree-Fock level taking into account quantum electrodynamic and finite nuclear-size effects. The K _α1 transition energies for different ionization states are accurately predicted and compared with recent experiments in the α -decay of ²⁷² ₁₁₁Rg .     

Sum peak method applied to the study of decay of Ir-192

The electron capture probabilities to 690.70 and 580.37 keV levels and theK-conversion coefficients of 205.9 and 316.5 keV transitions in the decay of Ir-192 have been determined from the measurement of gamma-ray intensities in conjunction with an analysis of theKX-ray-γ-ray sum peaks observed with a co-axial HPGe detector. TheK-capture probability to 690.70 keV level was determined by an approach which is independent ofK-shell fluorescence yield and absolute detection efficiency forKX-rays. TheK-shell fluorescence yields of the daughter products, namely, Os and Pt of Ir-192 have also been determined by the same technique and were found to be 0.964±0.077 and 0.969±0.068 respectively.     

Core polarization effects on C4 form factors of sd-shell nuclei

Coulomb form factors of C4 transitions in even-even N = Z sd-shell nuclei ( ²⁰Ne, ²⁴Mg, ²⁸Si and ³²S) are discussed taking into account higher-energy configurations outside the sd-shell model space which are called core polarization effects. Higher configurations are taken into account through a microscopic theory, which allows particle-hole excitations from the 1s and 1p shells core orbits and also from the 2s1d-shell orbits to the higher allowed orbits with excitations up to 4 ω. The effect of core polarization is found essential in both the transition strengths and momentum transfer dependence of form factors, and gives a remarkably good agreement with the measured data with no adjustable parameters. The calculations are based on the Wildenthal interaction for the sd-shell model space and on the modified surface delta interaction (MSDI) for the core polarization effects. Received: 24 January 2002 / Accepted: 29 July 2002 / Published online: 6 March 2003 RID="a" ID="a"e-mail: baguniv@uruklink.net Communicated by P. Schuck     

Trajectory analysis of ions formed in the field emitter inter-electrode region

Ion trajectories are three-dimensionally analyzed to determine the main source of ions striking the emitting area of a field emitter. Computer calculations of the ion trajectories are made for a field emitter in the shape of a sphere radius 1000 Å, mounted on an orthogonal cone, and anode radii of 3 cm and 1 cm centered at the emitter. Approximately 10^?10 to 10^?9fraction of the ions formed at the anode by electron impact desorption reach the emitter tip. Only those residual gas ions generated in the space of a few μm around the tip are able to impinge on the emitting area. Under typical operating conditions of 10^?9 Torr, the residual gas ions striking the tip are 10 to 10² times greater than those from the anode, assuming an ion ejection of one ion per 10⁵ electrons, and an anode potential of about 3 kV.