首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 484 毫秒
1.
以氯化铁和三乙烯四胺为原料,采用水热合成法制备了纳米α-Fe2O3。对样品进行了XRD、FT-IR、TEM表征分析,并研究了其光催化性能。研究结果表明,随着Fe Cl3与C6H18N4摩尔比的增大,纳米颗粒先增大后减小,当n(Fe Cl3)∶n(C6H18N4)=1∶1,样品为结晶度较好的50~80 nm的近方形颗粒,且分散性较好。当n(Fe Cl3)∶n(C6H18N4)=2∶1,样品颗粒最小,光催化性能最好。随着水热反应时间延长,样品颗粒尺寸减小,当水热反应0.5 h时,样品为形貌不规则、界面不清晰、有毛绒状物质附着的60~70 nm的圆形颗粒,有团聚,结晶度较差。当水热反应1 h时,样品为粒径65 nm左右的近方形均匀块状颗粒,且分散性较好,结晶度较高。继续延长水热反应时间,样品形貌变化且颗粒减小,光催化性能逐渐增强。  相似文献   

2.
采用水热法低温(200℃)处理12h直接制备ZnS∶Cu,Al纳米晶,并探讨其光致(PL)和X射线激发(XEL)光谱特性及后续退火处理的影响.XRD和TEM分析表明,水热法直接制备的ZnS∶Cu,Al粒径约为15nm,尺寸分布窄,分散性好,具有纯立方相的球形结构.其PL和XEL光谱均为宽带谱,n(Cu)/n(Zn)=3×10-4和n(Cu)/n(Al)=0.5时PL和XEL光谱强度最大,XEL峰值在470nm处.在此条件下,水热处理3h直接合成的纳米晶在氩气保护下于800℃退火1h后样品的XEL发光进一步增强.XEL光谱强度约是退火前样品的8倍,此时峰值波长在520nm,团聚形成径为200~500nm的类球形六方相结构.发光强度增强,但粒径很小,对提高成像系统分辨率非常有意义.通过比较样品的XEL和PL光谱,讨论了XEL和PL光谱的发光机理和激发机制及退火对其特性的影响.  相似文献   

3.
采用水热法低温(200 ℃)处理12 h直接制备ZnS∶Cu, Al纳米晶, 并探讨其光致(PL)和X射线激发(XEL)光谱特性及后续退火处理的影响. XRD和TEM分析表明, 水热法直接制备的ZnS∶Cu, Al粒径约为15 nm, 尺寸分布窄, 分散性好, 具有纯立方相的球形结构. 其PL和XEL光谱均为宽带谱, n(Cu)/n(Zn)=3×10-4和n(Cu)/n(Al)= 0.5时PL和XEL光谱强度最大, XEL峰值在470 nm处. 在此条件下, 水热处理3 h直接合成的纳米晶在氩气保护下于800 ℃退火1 h后样品的XEL发光进一步增强. XEL光谱强度约是退火前样品的8倍, 此时峰值波长在520 nm, 团聚形成径为200~500 nm的类球形六方相结构. 发光强度增强, 但粒径很小, 对提高成像系统分辨率非常有意义. 通过比较样品的XEL和PL光谱, 讨论了XEL和PL光谱的发光机理和激发机制及退火对其特性的影响.  相似文献   

4.
采用反应性熔盐法以n(K2Se3)∶n(Ge)∶n(Se)=2∶1∶6的摩尔比,在773 K下反应5 d,得到一种新的混合价硒代锗酸盐,K2Ge4Se8.该晶体属于单斜系,空间群为P21/c,晶胞参数a=0.73752(5) nm, b=1.2239(2) nm, c=1.7468(4) nm, β=96.02(3)°, V=1.5680(5) nm3, Z=4.偏差因子R1=0.0643, wR2=0.1547. K2Ge4Se8晶体具有层状结构,二维的 2∞[Ge4Se8]2-层负离子和K+正离子堆积而成,层与层按ABAB排列.K2Ge4Se8属于Zintl型化合物,属于半导体,反射光谱法测定的光学能隙(Eg)为1.8 eV.  相似文献   

5.
水热法制备表面修饰的钛酸锶纳米微粉   总被引:2,自引:0,他引:2  
以工业原料和常用试剂TiCl4、Sr(NO3)2和KOH为基础原料,通过添加表面活性剂十二烷基苯磺酸(DBS),采用水热法制备出表面包裹有DBS的钛酸锶纳米微粉,并应用红外光谱,X射线衍射谱,透射电子显微镜,热分析等一系列手段对其微结构进行了表征.结果表明:样品为表面包裹有DBS的钛酸锶纳米微粉,其形状较为规则,粒度分布较窄,单分散性较好.粒子的平均粒径为120nm,包裹膜的平均厚度为6nm左右.根据X光谱测量,表面修饰后的钛酸锶纳米微粉均以立方相存在.一般体相钛酸锶微粉为极性粉体.而表面修饰后的钛酸锶纳米微粉能够较为稳定地悬浮于非极性液体如正己烷中,说明SrTiO3粉体的极性表面被DBS包裹后,变为非极性.  相似文献   

6.
以硝酸银为原料,β-环糊精为还原剂和保护剂,一步法合成了粒径为10~30 nm的单分散银纳米粒子,其结构经UV-Vis,FT-IR,XRD和TEM表征。研究了pH、反应温度和γ[n(1)∶n(AgNO_3)]对反应的影响,并提出了银纳米粒子的形成机制。  相似文献   

7.
聚壳糖模板法制备纳米硒   总被引:12,自引:0,他引:12  
报道了一种利用天然高分子壳聚糖为软模板水相制备纳米硒的方法。研究了反应时间、反应物浓度、温度、超声等实验条件对产物粒度大小、形貌的影响。结果表明 ,当n(Vc)∶n(H2 SeO3 ) =4∶1、壳聚糖质量分数为 1 2 0× 10 -4、常温下反应 2h时 ,可得到均匀稳定的球形纳米硒颗粒 ,平均粒径约 5 0nm ,并随反应体系的总浓度增加而减小。在 80℃反应时 ,得到了棒状纳米硒。采用紫外光谱、红外光谱、X射线衍射和透射电镜等对产物进行了结构分析和形貌观察。  相似文献   

8.
溶胶-凝胶自蔓燃法制备铁掺杂纳米TiO2光催化剂   总被引:1,自引:0,他引:1  
史载锋  宋雪芳  李娟 《应用化学》2010,27(10):1177-1181
为了研究溶胶-凝胶自蔓燃法(SHS)制备的铁掺杂纳米TiO2的光催化活性,以TiCl4为原料制备了Fe3+掺杂TiO2光催化剂,分别在低压汞灯、中压汞灯和太阳光照射下进行了亚甲基蓝降解实验。 XRD和SEM显示,以TiCl4为前驱体,n(Ti)∶n(柠檬酸)∶n(NH4NO3)=1∶3∶5,经250 ℃自蔓燃和500 ℃热处理后,TiO2呈疏松、多孔的灰白色锐钛型粉体,粒径约为20 nm;在不同光源作用下,掺铁摩尔分数为0.02%的TiO2催化活性均最大;亚甲基蓝溶液在掺铁分数为0.02%的TiO2作用下,经太阳光照90 min后降解率达到了96.1%,为纯TiO2的1.78倍。  相似文献   

9.
采用纳米化学技术制备了新型的纳米复合固体超强酸催化剂SO42-/ZrO2-Fe2O3,并用XRD、TEM进行了表征.结果表明:所研制的SO42-/ZrO2-Fe2O3催化剂为晶态纳米粒子,平均粒径为30 nm,分散性较好;当活化温度为580℃,反应温度为75℃,n(硝酸)/n(苯)=2,m(苯)/m(催化剂)=20,催化反应时间5 h时,硝基苯收率可达89.6%.  相似文献   

10.
以组成为n(SiO_2)∶n(Al2O3)∶n(CaO)∶n(CaF_2)∶n(NaF)∶n(B_2O_3)=40∶20∶10∶10∶15∶5的微晶发光玻璃为基质,采用一步析晶法制备了CaF_2析晶相.利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、X射线能量散射谱仪(EDS)和荧光分光光度计等对样品结构、组成及光谱性能进行分析,探讨了Eu3+掺杂浓度和析晶温度对微晶玻璃发光性能的影响.实验结果表明,在850℃下处理可获得分布均匀、粒径尺寸为200 nm的CaF_2析晶相,微晶玻璃的发光强度是基质玻璃的1.7倍.微晶玻璃的发射光谱在590,614,652和700 nm出现发射峰,分别对应Eu3+的5D0-7FJ(J=1,2,3,4)跃迁.通过对5D0-7F1和5D0-7F2跃迁强度的分析以及Judd-Ofelt理论参数Ω2值的计算可知Eu3+周围晶体场在析晶前后对称性发生变化.机理分析表明,析晶处理后Eu3+从高声子能量的Si-O环境进入低声子能量的Ca-F环境中,说明Eu3+可作为荧光探针研究微晶玻璃晶体结构的变化.  相似文献   

11.
Zusammenfassung Mo3CoB3, Mo3NiB3, W3CoB3 und W3NiB3 kristallisieren in einem eigenen Typ (W3CoB3-Struktur). Das trigonal prismatische Bauelement [T 6B]* ist zu Ketten vereinigt, wobei B3-Gruppen entstehen. Die Phasen sind vermutlich Bor-reicher als obiger Formel entspricht.
The crystal structure of W3CoB3 and the isotypic phases Mo3CoB3, Mo3NiB3, and W3NiB3
Mo3CoB3, Mo3NiB3, W3CoB3, and W3NiB3 were found to possess a new type of crystal structure (W3CoB3-structure type). Trigonal prismatic groups [T 6B]* are linked together forming chains in such a way that B3-groups occur. These borides do probably exist with a larger amount of boron as to compared with the formula.


Mit 2 Abbildungen  相似文献   

12.
γγγ-Trifluorocarbonyl compounds are easily obtained in a good yield by introduction of the 1,1,1-trifluoroethyl moiety (CF3-CH2-) on the -methylene group of a ketone.  相似文献   

13.
K3SbSe3, Rb3SbSe3, and Cs3SbSe3 – Synthesis and Crystal Structure The compounds K3SbSe3, Rb3SbSe3 and Cs3SbSe3 were synthesized by heating mixtures of Sb2O3 and an alkalicarbonate in a stream of hydrogen saturated by selenium in a temperature range between 750 °C and 800 °C. The compounds crystallize isostructural with Na3AsS3. A comparison of atomic distances and bond angles with those of the isostructural arsenic and bismuth compounds shows the effect of lone pairs.  相似文献   

14.
γ-Nitro-γ-butyrolactone By oxidation of 3-(1-nitro-2-oxocyclohexyl)propanal ( 1 ) with KMnO4, besides 3-(1′-nitro-2′-oxocyclohexyl)pripionic acid ( 2 ), the complete hydrolysis product 4-oxononanedioic acid ( 4 ) and the oxidized semi-hydrolysis product 5-(2-nitro-5-oxotetrahydro-2-furyl)pentanoic acid ( 3 ) were formed. The crystalline 3 decomposes at r.t. forming 4 and nitrous gases; its structure was established by X-ray determination.  相似文献   

15.
Thin films of methylammonium lead halides, CH3NH3PbI3 and CH3NH3PbI3-xClx, were deposited onto symmetrical microstructured electrode arrays of gold or platinum on Si/SiO2 wafers. Polarization studies were carried out on perovskite films under vacuum in the dark. For poling, a constant voltage was applied to the samples while the temperature was cycled between 295 K and 4 K. The measured current densities depending on the temperature showed distinct characteristics relating strongly to the crystal phase and the dielectric properties of the perovskite films. Voltage sweeps were carried out at different scan rates at specific temperature intervals after poling. The polarization of the films due to the migration of iodide vacancies in direction of the blocking perovskite/metal interface was frozen almost up to room temperature. Charge carriers were only able to cross the blocking barrier and contribute to the current where the ions have accumulated during poling. All J-V curves showed hysteresis: inverted and regular hysteresis at room temperature and below, respectively. Inverted hysteresis originates from the slow accumulation of ions at the blocking barrier, while regular hysteresis arises from a distortion in the adjacent crystals which will be discussed.  相似文献   

16.
K3BiSe3, Rb3BiSe3, and Cs3BiSe3 – Derivatives of the Th3P4 Structure Type The compounds K3BiSe3, Rb3BiSe3, and Cs3BiSe3 were synthesized by heating mixtures of Bi2O3 and the respective alkalicarbonate in a stream of hydrogen saturated by selenium at 850°C. Thin crystals of the compounds appear red in transmitted light. They crystallize isostructural with Na3AsS3, space group P213, lattice constants a = 9.771(5) Å, a = 10.161(3) Å, and a = 10.587(5) Å for K3BiSe3, Rb3BiSe3, and Cs3BiSe3, respectively. The Na3AsS3 structure type is a derivative of the Th3P4 structure type.  相似文献   

17.
The synthesis of derivatives of 3-amino-3-deoxy-L-erythrose by LAH or LAD reduction of the oxime of 1,2-O-isopropylidene α-L -glycero-tetros-3-ulofuranose is described.  相似文献   

18.
Condensation of pyrrole-2-dithiocarboxylates with CH acids containing ester groups, in the KOH-DMSO system, was used to prepare previously unknown 1-alkylthio-3H pyrrolizin-3-ones. The latter, treated with secondary amines, are readily converted to the corresponding 1-amino derivatives.  相似文献   

19.
Previously unknown 1-alkylthio-3H-pyrrolizin-3-ones have been obtained by the condensation of pyrrole-2-dithiocarboxylates with CH acids containing ester groupings in the KOH-DMSO system. On treating the products with secondary amines they are readily converted into the corresponding 1-amino derivatives.Irkutsk Branch of the Russian Academy of Sciences, Irkutsk 664033. Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 7, pp. 919–924, July, 1996. Original article submitted May 2, 1996.  相似文献   

20.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号