大口径天线短脉冲微波辐射特性

为了开展大口径天线短脉冲微波辐射特性研究,建立了一套大口径天线微波短脉冲特性测试系统。该系统可产生快上升沿、脉冲可调(脉宽最短可到0.5 ns)的微波激励脉冲、接收动态范围大于52 dB。利用该测试系统进行实验,获得了不同微波激励脉冲宽度条件下,天线方向图和辐射场波形脉冲宽度变化曲线。测试结果表明:在天线远场距离处,改变微波激励脉冲宽度,对天线主轴辐射场波形基本无影响;而在偏离主轴处,辐射场波形会出现不同程度的脉冲展宽及幅值减小等波形畸变现象,偏离主轴角度越大,微波激励脉冲宽度越小,畸变越明显。     

HL-2A装置电子回旋打火保护系统设计

电子回旋打火保护系统由打火弧光探测器、A/D转换单元和逻辑处理单元组成。弧光探测器响应时间小于2μs,A/D转换单元和逻辑处理单元响应时间小于1μs。打火保护系统输出保护信号关断各供电电源的响应时间小于20μs。     

超导接收前端用制冷HEMT低噪放电控组件设计

超导接收前端以超导滤波器和高电子迁移率晶体管(HEMT)低温放大器构成核心微波电路,其HEMT放大器在低温下拥有极低的工作噪声,但对偏置供电的要求很高,只有在特定偏置下,系统才拥有最佳的工作稳定度、高增益和低噪声。本文针对多信道超导接收前端,设计了一种多通道、模块化,带程控通讯的超导接收前端用HEMT低噪放电控组件,为设备核心射频通道提供供电、切换和远程控制。其供电偏置可调、供电纹波≤3 mV,并提供多路TTL电平接口,支持RS485数据通讯控制,便于模块化安装,在超导接收前端分机中工作状况良好。     

kW级功率驱动的锁相高功率微波发生器

针对kW级微波驱动的锁相GW高功率微波,设计了一个高增益(大于50 dB)四腔相对论速调管放大器(RKA)。模拟表明,在此条件下高次模振荡严重影响器件的锁相实现。由此,将RKA结构与正反馈振荡电路结合起来,建立相应的等效电路来研究这种高次模激励的物理过程(即高次模的激励与中间腔之间耦合强度的相关性)。在高次模振荡的等效电路(即正反馈振荡电路)中,用衰减电阻代替结构中的微波吸收层来研究高次模振荡的抑制机理,衰减电阻通过对反馈过程的控制,提高了电路的自激振荡起振电流。在结构上按照衰减电阻要求设计了微波吸收层,将高次模振荡的起振电流提高到大于器件的工作电流,实现了高增益(约60 dB)条件下高次模激励的抑制。模拟获得了4 kW微波功率驱动的2.3 GW锁相高功率微波,增益接近60 dB。在LTD加速器平台的实验结果表明:注入微波由固态RF种子源提供(功率10 kW),输出功率达到1.8 GW,增益为52.6 dB,90 ns内输入和输出微波的相对相位差小于±10°,实验上实现了kW级注入微波对GW高功率微波的相位锁定。     

基于FPGA的能量倍增器相位翻转系统的研制

介绍了基于可编程逻辑门阵列(FPGA)的能量倍增器(SLED)相位翻转系统。该系统主要由微波IQ调制器、FPGA和高速DAC组成。在FPGA的控制下,DAC输出两路双极性脉冲电平信号,加载于调制器的IQ端,将微波连续波输入信号转变为4μs脉冲输出信号,并且在3μs时刻微波相位发生180°跳变。经测试,相位翻转精度为180°±2°,翻转相位的长期稳定度优于±0.5°;相位翻转系统驱动的6台SLED的输出功率增益均超过7dB,最高达到7.54dB,增益的长期稳定度达到±0.1dB。     

低噪声放大器有意电磁干扰效应

 低噪声放大器(LNA)是高功率微波“前门”效应典型薄弱器件之一。通过SPICE效应电路建模、模拟计算和注入实验,研究了LNA在不同微波脉宽、功率参数下其增益压制效应规律。模拟结果与实验数据获得良好一致,表明基于SPICE电路模型微波效应研究方法的有效性。研究表明,LNA增益压制脉宽随注入微波脉冲脉宽的增大具有饱和效应,该饱和值基本等于LNA直流偏置电路RC时间常数,并且出现饱和现象对应注入微波脉宽拐点约为150~250 ns。最后,给出了LNA微波脉冲效应定性物理解释和机理探讨。     

轴向加速管—一种新的高功率微波源

 提出一种新的高功率微波源器件——轴向加速管,与径向加速管比较,有两点不同：在二极管/共振腔后加了一个加速区及将径向加速改为轴向加速。研究了这种器件中电子束的群聚和辐射。发现在二极管与共振腔结合的系统里,电子束可实现理想群聚,各次谐波电流在非相对论条件下可达到初始电流的5.6倍。通过电子束再加速和仔细设计提取腔,可望得到可调频率和高功率的微波脉冲。     

线性微波化学气相沉积制备SiNx薄膜的微结构及光学性能研究

利用自主研发的线性微波化学气相沉积系统在不同微波功率、微波占空比、基片温度、特气比例条件下制备了SiN_x薄膜. 通过扫描电子显微镜、椭圆偏振仪等表征测量技术, 研究了不同工艺参数对SiN_x薄膜表面形貌、元素配比、折射率、沉积速度的影响, 并探讨了薄膜元素配比、折射率、沉积速度间的关系. 结果表明: 利用线性微波沉积技术, 不同工艺参数下制备的SiN_x薄膜组成元素分布均匀, 同时具有平整的表面状态; 特气比例和微波占空比是影响薄膜折射率的最主要因素, 薄膜折射率在1.92–2.33之间连续可调; 微波功率、微波占空比、沉积温度、特气比例都对SiN_x 薄膜沉积速度影响较大, 制备的SiN_x薄膜最大沉积速度为135 nm·min^-1.     

n型主动拉曼增益原子介质中的光学双稳态

研究了主动拉曼增益原子介质在单向环形腔中的光学双稳态．该系统是一个相干共振的n型四能级原子系统,可在室温下实现,有能级失谐量、原子数密度、抽运场、控制场等较多的可调参数,且有无增益的透明窗口．完全通过解析方法定量给出实现光学双稳态的条件,以及可调参数的取值范围,并进一步给出实现光学多稳态的条件,为实验上实现光学双稳态与多稳态提供了理论依据．     

微波射频场调制下Λ型三能级原子系统的电磁感应光栅

研究了在微波射频场调制下的Λ 型三能级原子系统的电磁感应光栅现象. 结果表明: 微波场可以增强对探测场的相位调制和增益作用, 使得衍射强度、尤其是一阶衍射强度明显提高; 当系统参数取值适当时, 一阶衍射强度随微波场强度呈指数增长的趋势. 关键词： 电磁感应光栅 电磁感应透明 微波射频场     

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A new arc detector with ultra wide dynamic range was developed based on three gain adjustable amplifiers and microcontroller for the RF (radio frequency) windows in the high-power microwave heating systems on HL-2A/M tokamak. The gain is digitally adjustable with 8 levels in the main amplifier and the protection threshold is adjustable from 0 to 5V with accuracy of 20mV. Both the gain and threshold are remotely controlled with the help of a microcontroller. The measured maximum response time is 2.56μs. The arcing detectors work properly in different level of background light and in complicated electromagnetic environment.     

增益半导体光放大器的特性

为满足半导体光放大器（SOA）在光纤到户FTTH系统接入网中的广泛应用,提出了基于光纤光栅外腔反馈型GC-SOA结构的全光增益机制,窄线宽激光光源经可变衰减器、隔离器和光纤光栅注入到SOA中,SOA的输出光经隔离器和光纤光栅送至光谱分析仪,通过光纤光栅反馈输入SOA形成钳制激光。对GC-SOA的阈值特性、增益特性及开关特性进行分析,结果表明:当注入电流小于GC-SOA的阈值电流时,增益随注入电流的增加而增加;当注入电流大于GC-SOA的阈值电流后,其增益不再随注入电流的变化而变化,实现了SOA的增益稳定,使SOA的饱和输出功率得到了提高。     

Semi-gas kinetics model for performance modeling of flowing chemical oxygen-iodine lasers (COIL)

The gas pressure in a laser cavity of flowing chemical oxygen-iodine laser (COIL)is about 133.31333 Pa[1]. In this pressure range, effects of homogeneous and inhomo-geneous broadening competing with each other on the performances of a COIL are no-ticeable. Generally, a rate equation (RE) model is adopted to the performance modeling of a supersonic COIL, such as in refs. [1—4]. This model assumes the spectral line pro-file is homogeneously broadened. Homogeneous broadening assumption sim…     

A new microcontroller-based RADFET dosimeter reader

A new reader for radiation dose measurements using RADFET (pMOSFET) dosemeters has been developed. The threshold voltage (V_T) of the pMOSFETs is measured using a “one-point” method that determines V_T as the gate voltage for a given drain current. Using V_T, the absorbed dose, which is directly proportional to the threshold voltage shift, is calculated. The reader is based on a low cost 8-bit PIC 18F4520 microcontroller (MCU), and works independently of a personal computer, uses a touch screen and stores the data in microcontroller memory. Good agreement in threshold voltage values, obtained using a high-quality source-measure unit and the reader, was obtained. In addition, the reader can be used for threshold voltage measurement with other types of MOSFETs, especially in long duration experiments, as well as for the real-time measurements in radiotherapy, either as an autonomous system or integrated in a larger monitoring configuration.     

同轴共线阵列天线低副瓣设计

对流层风廓线雷达对阵列天线的要求是结构简单,在满足高增益条件下,低副瓣是其关键指标。针对该应用背景,提出了一种辐射单元长度可变的同轴共线天线 (COCO)模型。该天线模型利用不同数量辐射节COCO线源组阵,其口径幅度为修正Taylor分布。在该模型基础上,采用数值计算和优化,COCO阵列天线增益为25.7 dB,E面副瓣为-23 dB,H面副瓣为-22.3 dB。该天线阵样品的测试表明,所设计的低副瓣COCO阵列天线完全达到了设计目标。     

二维抛物线离散映射的动力学研究

由两个一维抛物线离散映射作推广并非线性耦合,实现了一个新的二维抛物线离散映射.利用不动点稳定性分析和映射分岔分析,研究了所提出的二维离散映射的复杂动力学行为及其吸引子的演变过程,阐述了它所特有的共存分岔模式和快慢周期振荡效应等动力学特性.研究结果表明:二维抛物线离散映射具有动力学特性调节和动态幅度调节的两个功能不同的控制参数,存在Hopf分岔、分岔模式共存、锁频和周期振荡快慢效应等非线性物理现象.并基于微控制器实现的数字电路验证了相应的理论分析和数值仿真结果. 关键词： 二维离散映射 分岔 吸引子 参数     

Theoretical study on the laser gain of a multi-stage dye laser amplifier

Theoretical studies on laser gain of a multi-stage dye laser amplifier are presented in this paper. The resultsshow that the influences of amplified spontaneous emission(ASE)and nonlinear absorption of excited-state on the gain are different for different input laser energies and gains. A threshold input intensityexists for a specific system. If the imput intensity is higher than the threshold, the nonlinear absorptionof excited-state will be the main cause for gain decrease. Otherwise, the ASE is the main cause. A newscheme is proposed to calculate the gain of the amplifier by the comparison of the input intensity with theeffective saturation intensity and the choice of the calculation gain method.     

Investigation on threshold power of stimulated Brillouin scattering in photonic crystal fiber

We have developed a theoretical approach to simulate stimulated Brillouin scattering (SBS) generation in photonic crystal fiber (PCF). The threshold condition for the SBS occurrence has been derived as a function of fiber parameters and input pump power. A particular emphasis is given to the influence of the input pump power and fiber length on the Brillouin gain in the PCF. To assess threshold pump power accurately, the pump depletion effect has been included by employing the 1% criterion. This simulation can anticipate the Brillouin threshold gain value precisely. The threshold gain varies from 14 to 18 depending on the PCF length.     

Minimal spaser threshold within electrodynamic framework: Shape,size and modes

It is known (yet often ignored) from quantum mechanical or energetic considerations, that the threshold gain of the quasi‐static spaser depends only on the dielectric functions of the metal and the gain material. Here, we derive this result from the purely classical electromagnetic scattering framework. This is of great importance, because electrodynamic modelling is far simpler than quantum mechanical one. The influence of the material dispersion and spaser geometry are clearly separated; the latter influences the threshold gain only indirectly, defining the resonant wavelength. We show that the threshold gain has a minimum as a function of wavelength. A variation of nanoparticle shape, composition, or spasing mode may shift the plasmonic resonance to this optimal wavelength, but it cannot overcome the material‐imposed minimal gain. Furthermore, retardation is included straightforwardly into our framework; and the global spectral gain minimum persists beyond the quasi‐static limit. We illustrate this with two examples of widely used geometries: Silver spheroids and spherical shells embedded in and filled with gain materials.     

A scheme for ultrashort X-ray lasing without inversion

A scheme for obtaining a laser without inversion in the deep X-ray regime is proposed based on the principle of gain without inversion. A ladder scheme is proposed in the Ar⁸⁺ system. In this system, conventional lasing with population inversion in a neonlike scheme is used. This lasing field is proposed for the drive field on the higher transition of the ladder. A coherent field obtained in the high harmonics ultrashort laser provides the probe field to be amplified. The ground level is incoherently pumped into the highest level, while the latter is incoherently depumped into the ground level, at a different adjustable rate. A detailed density matrix calculation of the ladder configuration is performed [3], and the conditions under which the system exhibits inversionless gain, as well as regular gain, are derived. Numerical calculations in the bare state picture exhibits gain without inversion both at resonance and at the generalized Rabi side bands. The probe lineshape is shown to be constructed of two symmetrical dispersionlike features each centered at the generalized Rabi side bands. This is evidence of the quantum interference occurring at these locations and the basis for the gain without inversion.