遗传算法在二维声子晶体带隙优化中的应用

运用自适应遗传算法对二维声子晶体的带隙宽度进行优化设计，并与平面波展开法相结合，研究了由正方形排列的铅-环氧树脂构成的声子晶体的带隙宽度优化问题，发现自适应遗传算法可以有效地搜索到具有较宽完全声子带隙的优化单胞形式. 关键词： 声子晶体 声子带隙 遗传算法     

基于平面波算法的二维声子晶体带结构的研究

介绍了平面波算法计算声子晶体带结构的分析过程，计算了二维双组分液相体系声子晶体的带结构.结果表明，四氯化碳/水银体系比水银/四氯化碳体系更容易产生带隙.随分散相填充分数f的增加，四氯化碳/水银体系声子晶体带隙宽度ΔΩ先增加，后减小，当f=0229时，有最大值ΔΩ=0549；水银/四氯化碳体系的带隙宽度一直增大，当f=0554时，有最大值ΔΩ=0515；f一定时，改变分散相单元的几何尺寸和点阵常数，带隙宽度ΔΩ保持不变. 关键词： 声子晶体 声子带隙 平面波算法 带结构     

一维光子晶体斜入射波包的带隙结构

对波包的任意傅里叶分量进行坐标变换后,利用转移矩阵法推导出波包斜入射情形下一维光子晶体的色散关系表达式,利用色散关系曲线分析得出波包斜入射的第一带隙结构,与以往平面波的第一带隙结构不同,波包的带隙宽度小于平面波的带隙宽度,并且在位置上前者带隙包含在后者内部.比较了一维光子晶体分别在波包入射与平面波入射情形下带隙位置和宽度,分析了波包中心入射角的变化以及波包的角分布范围的变化对带隙结构的影响,得到了一维光子晶体对波包斜入射的带隙结构的基本特征,确定了计算波包带隙能够近似当作平面波处理的条件.研究表明,波包的带隙结构受入射角大小和波包角分布范围的影响.入射角越小,波包入射的带隙结构越接近平面波;波包的角分布范围越小,光子晶体对波包的带隙宽度和位置越接近平面波.     

一维光子晶体斜入射波包的带隙结构

对波包的任意傅里叶分量进行坐标变换后,利用转移矩阵法推导出波包斜入射情形下一维光子晶体的色散关系表达式,利用色散关系曲线分析得出波包斜入射的第一带隙结构,与以往平面波的第一带隙结构不同,波包的带隙宽度小于平面波的带隙宽度,并且在位置上前者带隙包含在后者内部.比较了一维光子晶体分别在波包入射与平面波入射情形下带隙位置和宽度,分析了波包中心入射角的变化以及波包的角分布范围的变化对带隙结构的影响,得到了一维光子晶体对波包斜入射的带隙结构的基本特征,确定了计算波包带隙能够近似当作平面波处理的条件.研究表明,波包的带隙结构受入射角大小和波包角分布范围的影响.入射角越小,波包入射的带隙结构越接近平面波;波包的角分布范围越小,光子晶体对波包的带隙宽度和位置越接近平面波.     

木堆结构三维光子晶体带隙特性

基于平面波展开法研究木堆结构三维光子晶体带隙特性.用硅材料构成木堆结构三维光子晶体,改变结构中木条的宽度和长度,得到当木堆条宽度为5μm,高度为7μm时形成的带隙结构较宽,在0.2899-0.3804Hz,带隙宽度为0.0905Hz.改变构成木堆结构三维光子晶体的材料,得到锗材料构成木堆结构三维光子晶体带隙结构在0.2585-0.3500Hz,带隙宽度为0.0915Hz,带隙相比硅材料和碳化硅材料较宽.研究结论为三维光子晶体的制备提供参考.     

缺陷态光子晶体带隙特性的计算机仿真

基于平面波展开法,设计缺陷态二维正方晶格光子晶体结构,改变构成缺陷态结构的材料、占空比,应用Matlab语言计算机仿真得到,高介电常数材料构成的缺陷态光子晶体形成较宽的横磁波光子带隙,占空比在30％时形成较宽的横磁波光子带隙.研究结论为缺陷态光子晶体滤波器件的制作提供理论依据.     

光子晶体带隙和缺陷的特性

基于平面波展开法,以介电常数分别为1F/m和13F/m的物质构成三角晶格二维光子晶体,改变空气孔半径r与晶格常数a之间的大小,数值模拟得到r=0.48a时形成最大完全带隙0.4298-0.5192Hz.移去中心圆柱形成缺陷,数值模拟得到不能形成完全带隙结构,研究结论为光子晶体器件的制作提供参考.     

二维复式格子声子晶体带隙结构特性

借助于平面波展开法分析了二维复式格子声子晶体能带结构，计算了铝合金柱体按周期性结构排列在空气中形成的二维固/气复合体系的声子晶体，给出了复式蜂窝格子和复式Kagome格子的能带结构，进而对比分析了复式格子和简单格子的能带结构特性.结果表明，与简单格子相比，复式格子的带隙出现在频率相对较低的位置；在f=0.091—0.6046范围内，将声子晶体排列为复式格子要优于简单格子，可以得到更宽带隙.此外，引入了带隙分布图，讨论了填充系数f对带隙数目、带隙宽度以及带隙上下边界频率的影响. 关键词： 声子晶体 复式格子 带隙 平面波算法     

基于平面波展开法的二维光子晶体表面模式研究

采用平面波展开法研究了四种二维光子晶体结构(圆柱介质柱四方晶格、圆柱介质柱三角晶格、正方介质柱四方晶格、正方介质柱三角晶格)的带隙宽度随介质柱尺寸变化的关系.使用平面波展开法计算常规晶格和表面缺陷晶格的模式并进行结果叠加,研究了各结构的二维光子晶体在带隙宽度最大时的表面模式.结果表明,同种晶格的光子晶体带隙宽度随着介质柱的尺寸增大呈先增后减趋势,存在最大值.随着表面介质柱尺寸的增加,四种晶格表面模式曲线均呈下降趋势.四方晶格光子晶体与三角晶格相比,表面介质柱尺寸的变化范围更大,但能获取表面模式频率范围较小.     

散射体排列方式对二维磁振子晶体带隙结构的影响

本文采用平面波展开法数值计算了由铁圆柱分别按正方排列、三角排列以及六角排列在氧化铕基底材料中构成的二维磁振子晶体带结构,讨论了散射体的不同排列方式对磁振子晶体带隙结构的影响.计算结果表明,三角排列散射体的磁振子晶体能够获得最大的自旋波带隙结构. 关键词： 磁振子晶体 带隙 排列方式     

Influence of defect states on band gaps in the two-dimensional phononic crystal of 4340 steel in an epoxy

The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section into epoxy resin were studied by the plane-wave expansion and supercell calculation method. The band gaps of this type of phononic crystals with different defects were calculated such as defect-free, 60° crystal linear defect states, 120° crystal linear defect states, and 180° crystal linear defect states. It was found that the band gap will emerge in different linear defects of the phononic crystals and the bandwidth of linear defect states is larger than that of the free-defect crystal by about 2.14 times within the filling fraction F=0.1-0.85. In addition, the influence of filling fraction on the relative width of the minimum band gap is discussed.     

Influence of defect states on band gaps two-dimensional phononic crystal in the of4340 steel in an epoxy

The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. The band gaps of this type of phononic crystals with different defects were calculated such as defect-free, 60 crystal linear defect states, 120 crystal linear defect states, and 180 crystal linear defect states. It was found that the band gap will emerge in different linear defects of the phononic crystals and the bandwidth of linear defect states is larger than that of the free-defect crystal by about 2.14 times within the filling fraction F = 0.1-0.85. In addition, the influence of the filling fraction on the relative width of the minimum band gap is discussed.     

Absolute band gaps and waveguiding in free standing and supported phononic crystal slabs

Using the finite element method (FEM), we investigate the existence of absolute band gaps and localized modes associated with a guide in thin films of phononic crystals. Two different structures based on two-dimensional (2D) phononic crystals are considered, namely a free standing plate and a plate deposited on a silicon substrate. The 2D phononic crystal is constituted by a square array of cylindrical holes drilled in an active piezoelectric PZT5A matrix. We demonstrate the existence of absolute band gap in the band structure of the phononic crystal plate and, then, the possibility of guided modes inside a linear defect created by removing one row of air holes. In the case of the supported plate, we show the existence of an absolute forbidden band in the plate modes when the thickness of the substrate significantly exceeds the plate thickness.     

Point defect states of a hollow cylinder in two-dimensional phononic crystal

Point defect states in two-dimensional phononic crystal of a hollow mercury cylinder in a water host are studied.An improved plane expansion method combined with the supercell technique is used to calculate the band gaps and the pressure distribution at the defect position.The sonic pressure of defect modes shows that the waves are localized at or near the defect.As the filing fraction increases,more defect modes appear in the band gaps.     

The Brillouin zones and band gaps of a two-dimensional phononic crystal with parallelogram lattice structure

We present a detailed theoretical study on the acoustic band structure of two-dimensional(2D)phononic crystal.The 2D phononic crystal with parallelogram lattice structure is considered to be formed by rigid solid rods embedded in air.For the circular rods,some of the extrema of the acoustic bands appear in the usual high-symmetry points and,in contrast,we find that some of them are located in other specific lines.For the case of elliptic rods,our results indicate that it is necessary to study the whole first Brillouin zone to obtain rightly the band structure and corresponding band gaps.Furthermore,we evaluate the first and second band gaps using the plane wave expansion method and find that these gaps can be tuned by adjusting the side lengths ratio R,inclined angleθand filling fraction F of the parallelogram lattice with circular rods.The results show that the largest value of the first band gap appears atθ=90°and F=0.7854.In contrast,the largest value of the second band gap is atθ=60°and F=0.9068.Our results indicate that the improvement of matching degree between scatterers and lattice pattern,rather than the reduction of structural symmetry,is mainly responsible for the enhancement of the band gaps in the 2D phononic crystal.     

旋转方形散射体对三角晶格磁振子晶体带结构的优化

用改进的平面波展开法数值计算了正方形散射体三角排列的二维磁振子晶体当散射体旋转时的带结构. 结果显示, 同样的填充率下, 旋转正方柱散射体可以在新的频率范围内打开更多的带隙, 或者使低频带隙加宽. 说明旋转散射体可以有效地优化带隙.     

声波在二维固/流声子晶体中的禁带特性研究

采用时域有限差分法(FDTD),分析了声波在二维四方点阵铝/空气组合声子晶体中的禁带特性,并利用实验测试验证了理论分析的正确性.在此基础上研究了两种不同声阻抗率比固(实心圆柱和空心圆管)/流系统声子晶体的禁带特性.对于实心圆柱体,分析了有限尺寸结构声子晶体在传播方向上的层数对声波传播特性的影响,得到了这两种系统在不同填充率下取得最大声波禁带宽度所需的最少层数.同时指出,在低声阻抗率比条件下,对于空心圆管填充物,通过选取适当的半径比,可以获得比实心柱体更宽的方向带隙.     

Quality enhancement and insertion loss reduction of a rectangular resonator by employing an ultra-wide band gap diamond phononic crystal

We report on an ‘in plane mode’ band gaps investigation of a novel diamond CRS (circle-rectangle-square) shaped holey phononic crystals in the desired operating frequency ranges. An ultra-wide band gap for diamond in the ‘in plane mode’ is observed. We also investigate an ultra-wide acoustic band gap for a finite one-dimensional (1D) diamond CRS phononic crystal (PnC) in the ‘out of plane mode’, and an ultra-wide acoustic band gap of a finite two-dimensional (2D) diamond CRS phononic crystal (PnC) in the ‘out of plane mode’ based on the FEA (Finite Element Analysis) method. We analyze that the transmission response of diamond in the length extension and width extension manner is more reasonable. Ultra-wide peak attenuations in the transmission spectra of a CRS shaped diamond phononic crystal successfully reveal the complete band gaps. The wide band gap of a CRS shaped diamond phononic crystal and the wide peak attenuation strongly agree in the same frequency region. It is analyzed that when a CRS-diamond phononic crystal is employed for MEMS resonators with different tether widths the quality Q of the resonators improved, and the energy losses decrease with extremely low insertion loss. In addition, it is observed that the vibrational displacement of a resonator is reduced by employing a diamond phononic crystal.     

Enhancement of phononic band gaps in ternary/binary structure

Based on the transfer matrix method (TMM) and Bloch theory, the interaction of elastic waves (normal incidence) with 1D phononic crystal had been studied. The transfer matrix method was obtained for both longitudinal and transverse waves by applying the continuity conditions between the consecutive unit cells. Dispersion relations are calculated and plotted for both binary and ternary structures. Also we have investigated the corresponding effects on the band gaps values for the two types of phononic crystals. Furthermore, it can be observed that the complete band gaps are located in the common frequency stop-band regions. Numerical simulations are performed to investigate the effect of different thickness ratios inside each unit cell on the band gap values, as well as unit cells thickness on the central band gap frequency. These phononic band gap materials can be used as a filter for elastic waves at different frequencies values.     

Localisation of elastic waves in two-dimensional randomly disordered solid phononic crystals

Combined with the supercell technique, the plane wave expansion method is used to calculate the band structures of the two-dimensional solid–solid phononic crystals with the random disorders in either radius or location of the scatterers. Phononic systems with plumbum scatterers embedded in an epoxy matrix are calculated in detail. The influences of the disorder degree on the band structures for both anti-plane and in-plane wave modes are investigated. It is found that, with increase of the disorder degree, the band gaps become narrower with more flat bands appearing in the gaps. Both displacement distribution and response spectra show that at the flat bands, elastic waves are localised due to the presence of the disorder. Wave localisation is more pronounced at the flat bands near the lower/upper edge for the radius/location disorder. Wave propagation and localisation in a randomly disordered system with a point defect is also studied. The influence of the disorder on the point-defect state is discussed. The results show that the disorder can tune the frequencies of the defect states. It is particularly noticed that the double degenerate mode appearing within the gap of the mixed in-plane waves is split up into two separated ones when the random disorder is introduced into the system. Generally, the influence of the disorder is more pronounced for the mixed in-plane modes than the anti-plane modes. The analysis of this paper is relevant to the assessment of the influences of manufacture errors on wave behaviours in phononic crystals as well as the possible control of wave propagation by intentionally introducing disorders into periodic systems.